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15 Aug 1980

Volume 37, Issue 4, pp. 339-430

Page 1 of 2 Pages Next Page | Jump to Page

GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch

B. I. Miller and K. Iga

Appl. Phys. Lett. 37, 339 (1980); http://dx.doi.org/10.1063/1.91939 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Monolithically etched‐facet‐mirror GaInAsP/InP stripe lasers (1.3 μm) were made using a wet chemical etching technique. Lasers with 20 μm stripes have current thresholds of 300 mA (room temperature, pulsed) about 50% higher than comparable cleaved‐mirror lasers. Nearly single‐mode operation up to 1.51th has been achieved with a cavity length of ∼180 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Effect of growth terraces on threshold current density of (GaAl)As double‐heterostructure laser

K. Shima, K. Segi, H. Imai, T. Fujiwara, and M. Takusagawa

Appl. Phys. Lett. 37, 341 (1980); http://dx.doi.org/10.1063/1.91940 (3 pages)

Online Publication Date: 23 July 2008

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The variation of threshold current density Jth caused by the optical scattering loss due to growth terraces is experimentally and theoretically examined. It is found that Jth of the lasers in which growth terraces are parallel to the cavity direction is about 20% smaller than that of the lasers in which growth terraces are perpendicular to the cavity direction when the active‐layer thickness d is 0.1 μm. The optical scattering loss due to growth terraces was estimated to be 50 cm−1 at d=0.1 μm when the cavity contains 10–15 terraces whose height and length are about 100 Å and 1μm, respectively.
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42.55.Px Semiconductor lasers; laser diodes
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Laser‐photoinduced etching of semiconductors and metals

R. W. Haynes, G. M. Metze, V. G. Kreismanis, and L. F. Eastman

Appl. Phys. Lett. 37, 344 (1980); http://dx.doi.org/10.1063/1.91941 (3 pages) | Cited 22 times

Online Publication Date: 23 July 2008

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Etched patterns with submicron resolution have been produced using laser‐induced photodissociation of dissolved and complexed halogens in liquid solution. Tentative mechanisms for this photoinduced dissociation process are presented.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Bh Computer-aided design of microcircuits; layout and modeling
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.50.Hp Processes caused by visible and UV light

Efficient laser action on the 342‐nm band of molecular iodine using ArF laser pumping

M. J. Shaw, C. B. Edwards, F. O’Neill, C. Fotakis, and R. J. Donovan

Appl. Phys. Lett. 37, 346 (1980); http://dx.doi.org/10.1063/1.91942 (3 pages) | Cited 25 times

Online Publication Date: 23 July 2008

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Strong laser action on the 342‐nm band of I2 has been obtained by transverse pumping I2/SF6 mixtures at 193 nm with an ArF laser. The highest output energy obtained was 230 mJ at an intrinsic energy conversion efficiency of approximately 30% equivalent to a photon efficiency of greater than 50%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence

Observations of gain and laser oscillation in the blue‐green during direct pumping of XeF by microsecond electron beam pulses

J. D. Campbell, C. H. Fisher, and R. E. Center

Appl. Phys. Lett. 37, 348 (1980); http://dx.doi.org/10.1063/1.91943 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Laser oscillation on the C‐A transition of XeF has been observed during direct excitation of Ar/Xe/F2 and Kr/Xe/F2 mixtures by microsecond electron beam pulses. The measured output energy was of the order of 1 mJ, and the laser performance was limited by the small magnitude of the net gain. Measured net gains in Ar/Xe/F2 and Ne/Xe/NF3 mixtures were ≲5×10−4 cm−1 . Fluorescence and laser spectra of Ar/Xe/F2 mixtures exhibited numerous absorption features. The laser emission intensity was maximum at ∼485 nm with an approximate 12‐nm (FWHM) bandwidth. Substitution of Kr for Ar diluent dramatically improved laser performance.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

High‐efficiency flip‐chip coupling between single‐mode fibers and LiNbO3 channel waveguides

C. H. Bulmer, S. K. Sheem, R. P. Moeller, and W. K. Burns

Appl. Phys. Lett. 37, 351 (1980); http://dx.doi.org/10.1063/1.91944 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Coupling efficiencies of ≳70% have been consistently measured between single‐mode fibers and LiNbO3 channel waveguides for TE and TM polarizations, using a Si V‐groove/flip‐chip arrangement. Tapered fibers in deep transverse grooves provide precise altitudinal alignment of the coupling fibers. These efficiencies are as high as those measured with a micropositioner and compare well with theoretical estimates of maximum coupling limited only by mode field distribution mismatch. Fiber/channel/fiber throughput losses of ∼3 dB and a polarization‐independent interferometric waveguide modulator with fiber input and output are reported.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Saturation spectroscopy with multiple‐frequency excitation

G. Kramer, D. N. Ghosh Roy, J. Helmcke, and F. Spieweck

Appl. Phys. Lett. 37, 354 (1980); http://dx.doi.org/10.1063/1.91933 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Signal strength in saturated absorption spectroscopy can be increased without excessive line broadening by using multiple‐frequency excitation. This is demonstrated experimentally by phase‐modulating the incident laser beam in an electro‐optic crystal.
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42.50.-p Quantum optics
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

A compact repetitively pulsed superatmospheric‐pressure CO2 laser with high output power density

P. E. Dyer and B. L. Tait

Appl. Phys. Lett. 37, 356 (1980); http://dx.doi.org/10.1063/1.91934 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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The design and operation of a compact superatmospheric‐pressure CO2 laser operating at ⩽50 Hz is described. At 5 atm single‐mode power densities of 300 MW l−1 have been achieved at 25 Hz using a simple excitation circuit with low charging voltage.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Quenching of laser‐excited O2(b 1Σ+g) by CO2, H2O, and I2

R. G. Avilés, D. F. Muller, and P. L. Houston

Appl. Phys. Lett. 37, 358 (1980); http://dx.doi.org/10.1063/1.91935 (3 pages) | Cited 28 times

Online Publication Date: 23 July 2008

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The total quenching rates of O2(b 1Σ+g) by CO2, H2O, and I2 have been determined to be (4.53±0.29)×10−13 cm3 molec−1 sec−1, (6.71±0.53)×10−12 cm3 molec−1 sec−1, and (2.04±0.28)×10−11 cm3 molec−1 sec−1, respectively. A pulsed, Raman‐shifted dye laser was used to excite a single rotational line of O2(1Σ, v′=0), while subsequent 1Σ→3Σ fluorescence was monitored by a photon counting technique to determine the deactivation rate as a function of the partial pressure of quenching gas. Rate constants for deactivation of O2(1Σ) by CO2 and H2O were found to be consistent with those measured elsewhere, whereas I2 was found to quench O2(1Σ) an order of magnitude more slowly than reported in the literature. The lower total quenching constant for I2 suggests that the reaction O2(1Σ)+I2→O2(3Σ) +2I might not be responsible for dissociation of I2 in the chemical oxygen‐iodine laser.
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82.20.Rp State to state energy transfer
42.55.Ks Chemical lasers
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
78.60.Ps Chemiluminescence

An x‐ray resonator based on successive reflections of a surface wave

J. Bremer and L. Kaihola

Appl. Phys. Lett. 37, 360 (1980); http://dx.doi.org/10.1063/1.91936 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
Total reflection of x rays is considered by expanding the Fresnel coefficient in the grazing angle of incidence, assumed to be much less than the critical angle. A study is made of resonatorlike mirror systems that are capable of changing the direction of the incoming wave by 2π rad. The possibility of modulating the refractive index n=1−δ−iβ and the influence of scattering losses are briefly discussed. A high number of successive reflections may lead to a nonzero limit exp(−π√2 βδ−3/2) for the relative intensity. It is usually more important to have a ’’horizontal’’ reflectivity curve than a high critical angle.
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07.85.-m X- and γ-ray instruments
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Laser action in chromium vapor

Kanti Jain

Appl. Phys. Lett. 37, 362 (1980); http://dx.doi.org/10.1063/1.91937 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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A chromium‐vapor laser is demonstrated using excitation in a hollow‐cathode discharge. Oscillation is achieved at eight wavelengths in the near‐infrared, with a multiline quasi‐cw output power of 20 mw. Two of the transitions are attributed to Cr I and one to Cr II, the remaining five being unidentified. This, it is believed, is the first report of stimulated emission in neutral as well as singly‐ionized chromium.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.70.+e Charge transfer

Evidence of mode sweeping effects in a rotating‐mirror Q‐switched transversely excited atmosphere CO2 laser

U. K. Chatterjee, N. S. Shikarkhane, and U. Nundy

Appl. Phys. Lett. 37, 364 (1980); http://dx.doi.org/10.1063/1.91938 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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In a rotating‐mirror Q‐switched transversely excited atmosphere (TEA) CO2 laser the oscillating mode transversely sweeps the gain medium during buildup. This has a pronounced effect on the resulting pulse shape. The tail following the spike is typically in the form of a flat plateau. The experimental conditions favoring the generation of such pulse shapes are indicated. With a very simple device one can generate either a spike or a rectangular pulse from these pulses.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

High‐energy subnanosecond pulse amplification in XeCl

Thomas J. Pacala, James B. Laudenslager, and C. P. Christensen

Appl. Phys. Lett. 37, 366 (1980); http://dx.doi.org/10.1063/1.91945 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Pulse slicing and two‐pass amplification are investigated as a means of producing high‐energy subnanosecond pulses in the near ultraviolet. A simple laboratory‐scale XeCl oscillator–Pockels cell pulse slicer–amplifier system is used to produce 50‐mJ pulses of subnanosecond duration at 308 nm. Comparison of multinanosecond and subnanosecond pulse amplification allows estimation of the amplifier energy storage time to be 5 ns and demonstrates nearly complete extraction of available stored energy by the subnanosecond pulse.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Hp Optical processors, correlators, and modulators

Picosecond pulses from an optically pumped ribbon‐whisker laser

M. A. Duguay, T. C. Damen, J. Stone, J. M. Wiesenfeld, and C. A. Burrus

Appl. Phys. Lett. 37, 369 (1980); http://dx.doi.org/10.1063/1.91946 (2 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Picosecond pulses have been generated by an optically pumped GaAs laser. The laser consisted of a Zn‐doped single‐crystal GaAs ribbon whisker 1–2 μm thick sandwiched between highly reflecting dielectric mirrors, thus forming a cavity 5–7 μm long, with a round‐trip time of 0.08 ps. Output pulses as short as 1 ps were measured by means of a sum‐frequency cross correlation technique.
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42.65.-k Nonlinear optics
42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking

Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors

D. H. Auston, A. M. Johnson, P. R. Smith, and J. C. Bean

Appl. Phys. Lett. 37, 371 (1980); http://dx.doi.org/10.1063/1.91947 (3 pages) | Cited 76 times

Online Publication Date: 23 July 2008

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The rapid relaxation of the photoresponse of high‐defect‐density amorphous semiconductors such as evaporated a‐Si has been utilized to develop an electronic measurement capability which can generate and sample electronic transients with speeds ≲10 ps.
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72.40.+w Photoconduction and photovoltaic effects
06.60.Jn High-speed techniques (microsecond to femtosecond)
85.60.-q Optoelectronic devices

Iodine monofluoride emission spectrum and formation kinetics in electron‐beam‐produced plasmas

S. B. Hutchison, J. G. Eden, and J. T. Verdeyen

Appl. Phys. Lett. 37, 374 (1980); http://dx.doi.org/10.1063/1.91948 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Intense blue‐green fluorescence from a structured band centered at λ∼484 nm has been observed from Ar, CF3I, and NF3 (or F2) gas mixtures (T=300 K) excited by a ∼3‐ns FWHM electron beam. This emission is tentatively assigned to the E→A3π1 transition of the iodine monofluoride (IF) molecule. From the temporal behavior of the IF∗ and I2∗ (342 nm) emission, it has been determined that the IF (E) level is formed primarily by excitation transfer from I∗ (4P) states. The fluorescence efficiency of the IF (E→A) band and the IF∗ (E) state radiative lifetime have been estimated to be ∼6% (in 99.83% Ar/0.13% CF3I/0.04% NF3 mixtures. PTOTAL≈2300 Torr) and ∼15 ns, respectively. The emission band structure, the short IF (E) radiative lifetime, and the Franck‐Condon shift between the E and A states suggest that IF∗ is an attractive candidate for a blue‐green laser.
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33.20.Kf Visible spectra
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Effective elastic parameters of random composites

A. J. Devaney and H. Levine

Appl. Phys. Lett. 37, 377 (1980); http://dx.doi.org/10.1063/1.91949 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Expressions for the effective bulk and shear moduli of a random distribution of elastic spheres embedded in an elastic matrix are derived using a self‐consistent formulation of multiple‐scattering theory. The expressions derived are found to agree with those obtained by previous workers in the weak‐scattering limit but differ markedly from these earlier results when multiple‐scattering effects are important. The influence of these multiple‐scattering effects on the effective elastic constants is discussed and certain features thought to be caused by these effects are qualitatively studied.
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46.25.Cc Theoretical studies

Effect of accelerated growth rate (1–5 μm/h) on molecular beam epitaxial GaAs using Si as a dopant

Young G. Chai

Appl. Phys. Lett. 37, 379 (1980); http://dx.doi.org/10.1063/1.91950 (4 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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The slow growth rate of molecular beam epitaxy (MBE) allows close to monolayer control of the film thickness. However, if the growth rate can be increased without significant loss of material quality or control, MBE may also become an economical way to grow epitaxial layers for optoelectronic and microwave devices. In this work, Si was studied as an n‐type dopant at various growth rates. Hall mobilities of 60 036 cm2/V sec at 77 K and 8839 cm2/V sec at room temperature were achieved using a 1‐μm/h growth rate. Higher mobilities were obtained at higher growth rates. Photoluminescence spectra of Si‐doped films were dominated by near‐band‐edge emission. The growth rate of MBE GaAs can be increased at least up to 5 μ/h without change in electrical and optical characteristics of films.
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68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors

Confirmation of Biot’s theory

James G. Berryman

Appl. Phys. Lett. 37, 382 (1980); http://dx.doi.org/10.1063/1.91951 (3 pages) | Cited 135 times

Online Publication Date: 23 July 2008

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Plona’s recent measurements of elastic‐wave speeds in a water‐saturated porous structure of sintered glass beads are compared quantitatively to the predictions of Biot’s theory. The theoretical predictions lie within the bounds of experimental error (3%) for the fast compressional wave and for the shear wave in all cases. For the slow compressional wave, the theoretically predicted speeds lie within about 10% of the experimental values and increase with increase in porosity as observed. Our model achieves this agreement with no significant free parameters. The frame moduli are estimated using a recently developed self‐consistent theory of composite materials. The induced mass of the frame in a water environment is also estimated theoretically.
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43.20.Hq Velocity and attenuation of acoustic waves
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
41.20.Jb Electromagnetic wave propagation; radiowave propagation
62.30.+d Mechanical and elastic waves; vibrations

Laser irradiation of nickel single crystals

L. Buene, J. M. Poate, D. C. Jacobson, C. W. Draper, and J. K. Hirvonen

Appl. Phys. Lett. 37, 385 (1980); http://dx.doi.org/10.1063/1.91952 (3 pages) | Cited 30 times

Online Publication Date: 23 July 2008

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The effect of Q‐switched Nd:YAG laser beam irradiation on virgin and ion‐implanted Ni 〈110〉 single crystals has been studied. Rutherford backscattering and channeling have been used to establish crystal quality and to determine depth distributions and lattice locations of the implanted species (Au, Ag, and Ta) before and after laser treatment. Chanelling and Nomarski optical microscopy show that the Ni surface melts during the irradiation, followed by an epitaxial lattice regrowth resulting in (i) a formation of defects even in samples, (ii) a redistribution of the implanted atoms, and (iii) implanted atoms residing on substitutional lattice sites to form metastable solid solutions.
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79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation

Crystal orientation dependence of ionization rates in germanium

T. Mikawa, S. Kagawa, T. Kaneda, Y. Toyama, and O. Mikami

Appl. Phys. Lett. 37, 387 (1980); http://dx.doi.org/10.1063/1.91932 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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Ionization rates in 〈111〉 and 〈100〉 germanium are determined experimentally. The ionization rates obtained are expressed as α=2.72×106 exp(−1.1×106/E), β=1.72×106 exp(−9.37×105/E) for 〈111〉 and α=8.04×106 exp(−1.4×106/E), β=6.39×106 exp(−1.27×106 /E) cm−1 for 〈100〉 where α and β are ionization rates for electrons and holes, respectively, and E is the electric field. Hole‐ to electron‐ionization‐rate ratios of 〈100〉 Ge are found to be greater than those of 〈111〉 Ge. The multiplication noise power of Ge avalanche photodiodes calculated by using the ionization rates obtained shows good agreement with experimental results.
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79.70.+q Field emission, ionization, evaporation, and desorption
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Supersaturated metastable Ag‐Ni solid solutions formed by ion beam mixing

B. Y. Tsaur and J. W. Mayer

Appl. Phys. Lett. 37, 389 (1980); http://dx.doi.org/10.1063/1.91953 (4 pages) | Cited 42 times

Online Publication Date: 23 July 2008

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Extension of terminal solid solubilities has been achieved by ion beam mixing in the almost completely immiscible Ag‐Ni system. Multi‐layered samples of thin deposited Ag‐Ni films of various compositions were bombarded with energetic Xe ions at temperatures from −190 to 250 °C. Supersaturated Ag‐ and Ni‐rich fcc solid solutions were obtained, as indicated by x‐ray and electron diffraction. Analyses of lattice parameters showed that the solubility range for the metastable solid solutions produced by low‐temperature bombardment was wider than for those formed at high temperature. Maximum solubilities were determined to be 4.5 at. % Ni in Ag and 16 at. % Ag in Ni if one assumes the ion‐induced fcc phases to be ideal solid solutions. The effects of implantation temperature on the formation of metastable phases are discussed.
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61.66.Dk Alloys
61.80.Jh Ion radiation effects
64.60.My Metastable phases
64.70.K- Solid-solid transitions

The structure of ultrathin oxide on silicon

Ondrej L. Krivanek and Jerzy H. Mazur

Appl. Phys. Lett. 37, 392 (1980); http://dx.doi.org/10.1063/1.91954 (3 pages) | Cited 43 times

Online Publication Date: 23 July 2008

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30‐Å‐thick oxide on silicon has been examined in cross section by high‐resolution electron microscopy. The oxide thickness was uniform to within 5 Å, even though the oxide undulated up to 8 Å in height and with about 50 Å periodicity.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
85.60.Dw Photodiodes; phototransistors; photoresistors

Measurement of lateral compressive stresses under shock loading

Y. M. Gupta, D. D. Keough, D. Henley, and D. F. Walter

Appl. Phys. Lett. 37, 395 (1980); http://dx.doi.org/10.1063/1.91955 (3 pages) | Cited 21 times

Online Publication Date: 23 July 2008

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Resistance change measurements have been obtained from ytterbium foil gauges, in thin rectangular grooves, placed parallel and normal to the shock front in impact‐loaded polymethylmethacrylate (PMMA). Within experimental scatter, the resistance change ratios are in good agreement with the longitudinal and lateral stress ratios obtained from an independent determination in shocked PMMA. These results show the potential for measuring lateral stresses, a development expected to be very useful for shock wave studies.
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62.50.-p High-pressure effects in solids and liquids
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Investigation of rf sputter‐etched Si surface by spectroscopic ellipsometry

F. Ohira and M. Itakura

Appl. Phys. Lett. 37, 398 (1980); http://dx.doi.org/10.1063/1.91956 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Spectroscopic ellipsometry is applied to estimate the crystal damage to a rf sputter‐etched Si surface. The single‐crystal surface examined by this method has a sharp peak which corresponds to the intrinsic peak in Si. The spectrum change in the refractive index for a Si surface processed by rf sputter etching is measured and discussed. It is found experimentally that the increase in the k value, the imaginary part of the refractive index, at 5461 Å is the result of broadening of the k spectrum due to crystal damage, and that the characterization of the Si surface by ellipsometry at wavelengths of 4200–4500 Å is effective and reasonable.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.40.Tv Optical and dielectric properties related to treatment conditions
07.60.Fs Polarimeters and ellipsometers
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