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15 Aug 1980

Volume 37, Issue 4, pp. 339-430

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High‐efficiency InP homojunction solar cells

G. W. Turner, John C. C. Fan, and J. J. Hsieh

Appl. Phys. Lett. 37, 400 (1980); http://dx.doi.org/10.1063/1.91957 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Conversion efficiencies up to 15% (AM1) have been obtained for antireflection‐coated InP homojunction solar cells, the highest efficiency values reported for InP cells of any type. The cells were fabricated on n+ p p+ structures formed by liquid phase epitaxy on single‐crystal InP substrates. The cell photovoltaic characteristics are not very sensitive to n+‐layer thickness, indicating that the surface recombination velocity is not as high as in homojunction GaAs solar cells. The performance of various antireflection coatings has been investigated.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
72.40.+w Photoconduction and photovoltaic effects

HgCdTe photodiodes formed by double‐layer liquid phase epitaxial growth

S. H. Shin, A. H. B. Vanderwyck, J. C. Kim, and D. T. Cheung

Appl. Phys. Lett. 37, 402 (1980); http://dx.doi.org/10.1063/1.91958 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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High‐performance HgCdTe photodiodes have been formed by successive growth of p‐ and n‐type epitaxial layers on CdTe substrates via the liquid phase epitaxy technique. These diodes exhibit high resistance‐area (R0 A) products at high temperatures: R0 A products of 1 and 30 Ω cm2 have been observed at 283 and 200 K, respectively, for Hg0.68Cd0.32Te (λco=4.0 μm at 200 K). The saturation current density for the grown junction photodiode at 300 K is 0.12 A/cm2.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling
81.10.Fq Growth from melts; zone melting and refining

Capacitance‐voltage characteristics of Al/Al2O3/p‐GaAs metal‐oxide‐semiconductor diodes

H. Hayashi, K. Kikuchi, and T. Yamaguchi

Appl. Phys. Lett. 37, 404 (1980); http://dx.doi.org/10.1063/1.91959 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Metal‐oxide‐semiconductor (MOS) diodes were constructed on p‐type GaAs by means of anodic oxidation of aluminum film evaporated on GaAs. By terminating the oxidation precisely at the Al‐GaAs interface, MOS diodes in which the capacitance at low frequency increases in the positive‐bias region were obtained. The interface state density determined by using the Terman method based on 1‐MHz measurement of the C‐V characteristics is on the order of 1010 cm−2 eV−1.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
85.30.-z Semiconductor devices
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Switching phenomena in thin‐insulator metal‐insulator‐semiconductor diodes

Yutaka Hayashi

Appl. Phys. Lett. 37, 407 (1980); http://dx.doi.org/10.1063/1.91923 (2 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Switching phenomena with current‐control‐type negative resistance characteristics were observed in thin‐insulator metal‐insulator‐semiconductor diodes made on n‐type (100) silicon substrates. The characteristics except breakover point are reproducible and the diodes are also switched from a low‐conduction state into a high‐conduction state under a fixed‐bias condition by light stimulation from a commercial light‐emitting diode. One of the possible origins of this negative resistance is carrier multiplication by high‐energy electrons tunneled through the thin insulator and injected into the surface of the n‐type silicon substrate.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.20.Fv Electron impact: Auger emission
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects

Electrical behavior of polyvinylchloride thin films

R. Bahri and H. P. Singh

Appl. Phys. Lett. 37, 409 (1980); http://dx.doi.org/10.1063/1.91924 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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While investigating the metal–polyvinylchloride (<1500 Å)–metal sandwich structure using Al, Ag, Cu, and In electrodes, two kinds of switching properties were found. The symmetric sandwiches with aluminum electrodes exhibited voltage‐controlled negative resistance (VCNR) with memory, while asymmetric structures displayed current‐controlled negative resistance (CCNR) with memory. It was not possible to observe both kinds of switching phenomena in a single sample. The VCNR mechanism may be explained on the basis of high‐field domains (or an accumulation layer) and the CCNR phenomenon may be explained on the basis of a filamentary model.
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73.61.Ng Insulators
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Plasma separation of InGaAsP/InP light‐emitting diodes

Randolph H. Burton, H. Temkin, and V. G. Keramidas

Appl. Phys. Lett. 37, 411 (1980); http://dx.doi.org/10.1063/1.91925 (2 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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The application of plasma etching to the separation of InP/InGaAsP light‐emitting diodes (LED’s) is reported. Device wafers (75 μm thick) were separated by fast (0.6 μm/min) anisotropic (2:1) etching in a CCl4/O2 plasma at 300 °C. The LED’s showed significant improvements in their reverse leakage currents over similar devices separated by conventional mechanical means. We find the separation‐induced mechanical damage to be significant for conventional techniques causing both performance and yield loss. In contrast, the etched surfaces were free of mechanical damage resulting in a 100% yield of separated devices.
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52.40.Hf Plasma-material interactions; boundary layer effects
85.60.Jb Light-emitting devices

Determination of the free energy level of deep centers, with application to GaAs

D. Pons

Appl. Phys. Lett. 37, 413 (1980); http://dx.doi.org/10.1063/1.91926 (3 pages) | Cited 45 times

Online Publication Date: 23 July 2008

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A method is presented which allows the determination of the free energy level of deep centers by transient capacitance techniques. Preliminary results concerning deep centers in GaAs (E3, EL2, and chromium) are given.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Fe Electron and positron radiation effects

The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs

H. Künzel and K. Ploog

Appl. Phys. Lett. 37, 416 (1980); http://dx.doi.org/10.1063/1.91927 (3 pages) | Cited 146 times

Online Publication Date: 23 July 2008

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The first observation of several sharp photoluminescence lines with energies less than the energy of the recombination peak associated with the exciton bound to the neutral carbon acceptor in nominally undoped p‐type GaAs grown by molecular beam epitaxy (MBE) is reported. The lines ranging from 1.5110 to 1.5040 eV are interpreted as radiative recombination of defect‐induced bound excitons directly correlated with the interaction of As4 molecular beam species during MBE growth. These lines disappear totally when As2 instead of As4 beams are used. We then demonstrate that all sharp photoluminescence features, previously only detected in the best LPE samples, are now also observed in thin MBE GaAs layers when grown from As2 beam species.
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78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Increased charge capacity in breakdown‐limited metal‐insulated semiconductor Hg1−xCdxTe devices using a ramped gate voltage

R. A. Chapman, J. D. Beck, and M. A. Kinch

Appl. Phys. Lett. 37, 419 (1980); http://dx.doi.org/10.1063/1.91928 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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The useful charge capacity of a metal‐insulated semiconductor (MIS) device can be increased by utilizing a ramped‐gate‐voltage mode of operation. The ramping technique is demonstrated on 4.5 and 9.4‐μm long‐wavelength cutoff HgCdTe MIS devices measured at 80 K with a 300‐K background through ≃20° field of view and ?25% quantum efficiency. The gate voltage is ramped to increase the MIS well capacity at a rate slightly faster than the rate of photogenerated charge buildup in the inversion layer. The 4.5‐μm device achieved a storage capacity of greater than 3.7×10−7 C/cm2 (≳45 ms storage time), while the 9.4‐μm device achieved a storage capacity of 1.7×10−7 C/cm2 (300 μs integration time). The respective storage capacities demonstrated for these two wavelength bands are 3.5 and 17 times larger than obtained by the conventional pulsed‐gate technique.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Matrix‐addressed analog ferroelectric memory

R. A. Lemons, J. K. Grogan, and J. S. Thompson

Appl. Phys. Lett. 37, 422 (1980); http://dx.doi.org/10.1063/1.91929 (3 pages)

Online Publication Date: 23 July 2008

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A ferroelectric gadolinium molybdate crystal can be readily configured with multiple parallel domain walls. An individual domain wall is selectively moved by applying sufficient voltage to a corresponding stripe electrode on one face of the crystal. The polarization current which accompanies this motion is modulated by patterning the electrode on the opposite face of the crystal. In this way segments of analog information stored as a waveform pattern in the electrode can be selectively read. Sounds, words, or segments of typical speech are stored at a density of 50 sec of speech per cm2. The information is formatted in many parallel channels which are addressed with external switches. We have demonstrated this matrix addressing concept in a device which reproduces the words for the digits 0–9 and the symbols ∗ and ♯.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Cryogenic inertial confinement fusion target fabrication system directly operable inside a room‐temperature target chamber

K. Kim and H. Rieger

Appl. Phys. Lett. 37, 425 (1980); http://dx.doi.org/10.1063/1.91930 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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An inertial confinement fusion (ICF) target freezing system, which is capable of fabricating a uniform layer of DT condensate inside a glass microshell, has been developed using cold helium gas jets. The system marks a significant improvement on the existing target freezing systems for the following reasons: first, it does not require cryogenic shields; second, it is directly operable inside a room‐temperature target chamber; third, it maintains the integrity of a cryogenic target for as long as desired; fourth, since a bare target can be directly positioned inside the target chamber with no enclosure, implosion of the target using energetic beams (e.g., laser) can easily be achieved at any instant. Description of the system and some results illustrating its performance are presented along with their future applications.
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28.52.-s Fusion reactors
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
44.30.+v Heat flow in porous media
81.30.Fb Solidification

Improved efficiency of CdSe photoanodes by photoelectrochemical etching

R. Tenne and G. Hodes

Appl. Phys. Lett. 37, 428 (1980); http://dx.doi.org/10.1063/1.91931 (3 pages) | Cited 37 times

Online Publication Date: 23 July 2008

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By illuminating a CdSe photoanode in an electrolyte in which it is photoelectrochemically unstable, a selective etching of the CdSe to a matte black surface occurs with formation of small pits (≈1000 Å diameter). This photoelectrochemical etch was found to improve the output characteristics of the CdSe‐polysulfide photoelectrochemical cell through an increase in short‐circuit current (SCC) for single‐crystal CdSe, and an increase in fill factor and SCC for polycrystalline CdSe, where the improvement is more marked. This increase could be explained only partly through decreased reflectivity of the surface, and is probably connected with removal of (near) surface recombination centers.
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84.60.Jt Photoelectric conversion
82.45.-h Electrochemistry and electrophoresis
81.65.-b Surface treatments
73.40.Mr Semiconductor-electrolyte contacts
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