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1 Sep 1980

Volume 37, Issue 5, pp. 435-497

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Diffraction‐grating‐enhanced light emission from tunnel junctions

J. R. Kirtley, T. N. Theis, and J. C. Tsang

Appl. Phys. Lett. 37, 435 (1980); http://dx.doi.org/10.1063/1.91729 (3 pages) | Cited 41 times

Online Publication Date: 23 July 2008

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We report the observation of highly polarized, angle‐tunable visible light emission from Al‐AlOx‐Ag tunnel junctions fabricated on holographic gratings. From the angular dependence of the emission frequency we identify the electromagnetic mode responsible for the emission. The mode is surface plasmonlike with a dispersion that closely follows the light line. This is in contrast to the much lower phase velocity ’’junction’’ mode believed responsible for the light emission on surface‐roughened tunnel junctions. We argue that both modes should be considered in describing the emission from these devices.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Statistical characterization of the self‐induced intensity modulation exhibited by AlGaAs junction lasers with proton stripes

Thomas L. Paoli

Appl. Phys. Lett. 37, 438 (1980); http://dx.doi.org/10.1063/1.91730 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Results of a statistical study of the self‐induced modulation present in the intensity emitted by stripe‐geometry (AlGa)As junction lasers are reported. The data indicate that narrowing the width of the proton‐delineated stripe from 12 to 8 μm substantially reduces the fraction of unaged lasers with modulation depths greater than about 40% and increases the minimum frequency at which self‐induced intensity modulation occurs. Further analysis of the statistical data also suggests that the epi‐growth system can play a significant role in determining the statistical distribution of the self‐induced modulation depth.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes

Raman shifting of long‐pulse‐length XeF∗ laser radiation

Daniel W. Trainor, H. A. Hyman, Irving Itzkan, and R. M. Heinrichs

Appl. Phys. Lett. 37, 440 (1980); http://dx.doi.org/10.1063/1.91731 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Experiments have been carried out to Raman‐shift long‐pulse‐length XeF∗ laser radiation in high‐pressure molecular hydrogen. Typical output from a one‐meter‐long, e‐beam‐pumped XeF∗ laser was 0.6 J in 0.4 μsec. Significant Raman conversion, primarily into first Stokes radiation, was observed throughout the pump pulse, with an overall energy conversion efficiency of approximately 35%.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Electron‐pulsed diffusion of Se in GaAs

D. Eirug Davies, Thomas G. Ryan, and J. P. Lorenzo

Appl. Phys. Lett. 37, 443 (1980); http://dx.doi.org/10.1063/1.91732 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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n+ regions with concentrations exceeding 1019 cm−3 have been formed in GaAs by pulse diffusion with an electron beam. The diffusion source is a deposited As2Se3 film which is removed by the pulse without unduly affecting the initial polished appearance of the GaAs. The resulting doped layers are characterized by exceedingly low carrier mobilities. The well‐known similar deficiency of pulse‐annealed implanted layers would thus appear to be caused by some artifact introduced by the pulse rather than by residual damage unannealed from the implantation. Pulse diffusion should provide an alternative means to implantation for forming n+ contacts in GaAs.
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61.72.U- Doping and impurity implantation
85.30.Tv Field effect devices
66.30.J- Diffusion of impurities

Surface and thickness effects in the luminescence of amorphous Si:H

W. Rehm, R. Fischer, and J. Beichler

Appl. Phys. Lett. 37, 445 (1980); http://dx.doi.org/10.1063/1.91733 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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The luminescence decay of a‐Si:H films is found to be strongly dependent on the sample thickness and on the penetration depth of the exciting light: the decay becomes faster for excitation close to the surface, and when the sample thickness is reduced. We suggest that these effects are due to surface electric fields.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals

Annealing of damage and redistribution of Cr in boron‐implanted Si3N4‐capped GaAs

T. J. Magee, K. S. Lee, R. Ormond, R. J. Blattner, and C. A. Evans

Appl. Phys. Lett. 37, 447 (1980); http://dx.doi.org/10.1063/1.91734 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Transmission electron microscopy and secondary‐ion mass spectrometry have been used to determine the relative roles of encapsulant stress and implantation damage in the thermal redistribution of chromium. At low temperatures (500 °C), there is a plantation damage, while the encapsulant stress becomes predominant at higher temperatures.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.U- Doping and impurity implantation

Highly oriented zinc oxide films grown by the oxidation of diethylzinc

Sorab K. Ghandhi, Robert J. Field, and James R. Shealy

Appl. Phys. Lett. 37, 449 (1980); http://dx.doi.org/10.1063/1.91960 (3 pages) | Cited 43 times

Online Publication Date: 23 July 2008

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Zinc oxide films, with a high degree of c‐axis orientation, have been grown on glass substrates by a chemical vapor deposition process involving the oxidation of diethylzinc. Film growth was carried out over the 200–500 °C temperature range; however, the maximum crystal orientation was found to occur with substrate temperatures between 325 and 400 °C. The effect of different substrate materials on crystallographic orientation is also described in this letter.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

The effects of cold rolling on fluxoid pinning in a superconducting metallic glass

C. C. Koch, J. O. Scarbrough, D. M. Kroeger, and A. DasGupta

Appl. Phys. Lett. 37, 451 (1980); http://dx.doi.org/10.1063/1.91961 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Results exhibiting the influence of cold rolling fluxoid pinning in a metalic glass superconductor (Mo0.6Ru0.4)82B18 are reported. Inhomogeneous deformation up to 20% reduction in thickness does not change either the superconducting transition temperature Tc or upper critical field Hc2 but does degrade the critical current density by as much as 34% from the value in the the as‐cast condition. Possible mechanisms for this degradation of Jc are suggested. Pinning by inhomogeneities in composition or density rather than by the simple surface or unresolved second‐phase precipitates appears to be likely.
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81.05.Kf Glasses (including metallic glasses)
74.25.-q Properties of superconductors

Silicon graphoepitaxy using a strip‐heater oven

M. W. Geis, D. A. Antoniadis, D. J. Silversmith, R. W. Mountain, and Henry I. Smith

Appl. Phys. Lett. 37, 454 (1980); http://dx.doi.org/10.1063/1.91962 (3 pages) | Cited 46 times

Online Publication Date: 23 July 2008

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Silicon graphoepitaxy has been achieved using a strip‐heater oven and a sample configuration consisting of a relief grating in a SiO2 substrate, a deposited amorphous silicon film, and a deposited SiO2 overlayer or ’’cap.’’ The resulting films are free of cracks and superior in crystallographic orientation and surface smoothness to graphoepitaxial films produced by laser crystallization. Enhancement‐mode, n‐channel, insulated polysilicon gate field‐effect transistors were fabricated and gave surface mobilities of 400 cm2/V sec at a p doping of 1016 cm−3. A SiO2 cap, either intentionally deposited or produced by laser crystallization in the presence of oxygen, was found to be necessary for Si graphoepitaxy. We attribute this effect to shear stresses produced by the SiO2 cap during crystallization.
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68.55.-a Thin film structure and morphology
85.30.Tv Field effect devices
07.20.Hy Furnaces; heaters

Si and Ge (111) surface structures after pulsed laser annealing

D. M. Zehner, C. W. White, and G. W. Ownby

Appl. Phys. Lett. 37, 456 (1980); http://dx.doi.org/10.1063/1.91963 (4 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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Pulsed laser irradiation of (111) oriented single‐crystal surfaces of Si and Ge is shown to result in the production of (1×1) surface structures as determined by low‐energy electron diffraction. These metastable surface structures are obtained in the absence of any stabilizing impurities. The temperature range over which these surface structures are stable has also been determined. These results are compared with those obtained by conventional sputter‐anneal treatments.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
79.20.Ds Laser-beam impact phenomena

Observation of surface evaporation of Hg from HgTe crystals by means of energetic oxygen ion backscattering

K. Takita, K. Masuda, H. Kudo, and S. Seki

Appl. Phys. Lett. 37, 460 (1980); http://dx.doi.org/10.1063/1.91964 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Dissociation of Hg from the near‐surface region of HgTe crystals was observed, up to 10 μm, by means of 42‐MeV O5+ backscattering. Samples were annealed in vacuum at various temperatures up to 280 °C. The change of the backscattering spectra with annealing time and temperature indicated that the Hg atoms evaporated almost completely from the near‐surface region to a depth d(t,T) and that only Te atoms remained there. The interface between the Te region and the HgTe crystal migrated at a velocity u(T) which was determined as u(T)=1.2×105 exp(−1.2 eV/kT) cm/sec. This is accounted for by a simple phenomenological model which suggests that the migration of the Hg atoms across the interface is the rate controlling process for the whole boundary migration process.
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66.30.-h Diffusion in solids
68.35.Md Surface thermodynamics, surface energies
73.20.-r Electron states at surfaces and interfaces
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Schottky barrier formation by laser irradiation processing

E. S. Yang, C. M. Wu, H. J. Vollmer, T. O. Sedgewick, and R. T. Hodgson

Appl. Phys. Lett. 37, 462 (1980); http://dx.doi.org/10.1063/1.91965 (2 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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A Schottky barrier is fabricated with a silicon‐aluminum‐silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
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42.62.-b Laser applications
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Sx Metal-semiconductor-metal structures
79.20.Ds Laser-beam impact phenomena

Effect of electric field on deep‐level transients in GaAs and GaP

S. Makram‐Ebeid

Appl. Phys. Lett. 37, 464 (1980); http://dx.doi.org/10.1063/1.91966 (3 pages) | Cited 47 times

Online Publication Date: 23 July 2008

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For large enough electric fields, the emission of carriers from a deep level in a semiconductor is dominated by a tunneling mechanism. This mechanism is very sensitive to the parameters S and hω describing the interaction of the deep level with vibronic modes of the lattice. A best‐fit method is used to yield agreement between the theoretical and experimental dependence of the emission rate on electric field and temperature. This is done for levels E3 and EL2 (’’O’’ level) in GaAs and for the ZnO center in GaP. The best‐fit values obtained for S and hω are found to be consistent with other estimates deduced independently from photocapacitance, luminescence, and electron capture cross section measurements.
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79.70.+q Field emission, ionization, evaporation, and desorption
63.20.K- Phonon interactions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors

Plasma etching characteristics of sputtered MoSi2 films

T. P. Chow and A. J. Steckl

Appl. Phys. Lett. 37, 466 (1980); http://dx.doi.org/10.1063/1.91967 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Plasma etching of sputtered MoSi2 films using CF4/O2 mixtures was studied in a barrel‐type reactor. The etch rate in pure CF4 was very low (≲100 Å/min) and insensitive to applied power. The addition of a small percentage (<10%) of O2 dramatically increased the etch rate. For CF4/4% O2, and etch rate of ∼920 Å/min was measured at 100 W. A near‐linear etch rate dependence on rf power was observed, indicating that the controlling factor is the generation rate of etching radicals. For CF4/8% O2, the etch rate nearly doubled and showed saturation at high rf power, indicating the increased role of the surface reaction rate. Postdeposition anneal results in a 10–20% decrease in etch rate. An etch rate selectivity of 14–22 for MoSi2 vs SiO2 and of 2–3 for doped poly‐Si vs MoSi2 were measured.
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52.40.Hf Plasma-material interactions; boundary layer effects
81.65.-b Surface treatments
52.75.-d Plasma devices
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Open‐circuit voltage of induced‐junction solar cells

M. K. Alam and Y. T. Yeow

Appl. Phys. Lett. 37, 469 (1980); http://dx.doi.org/10.1063/1.91968 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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See Also: Erratum

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A numerical method is used to evaluate the open‐circuit voltage of induced‐junction solar cells as a function of substrate doping level and oxide charge. For a given oxide charge there is an optimum doping level at which VOC reaches a maximum. The equilibrium surface potential and the VOC increase with increasing oxide charge. The rate of increase, however, falls off sharply once the semiconductor surface is inverted.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

Epitaxially grown monocrystalline garnet cathode‐ray tube phosphor screens

J. M. Robertson and M. W. van Tol

Appl. Phys. Lett. 37, 471 (1980); http://dx.doi.org/10.1063/1.91728 (2 pages) | Cited 31 times

Online Publication Date: 23 July 2008

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The technique of liquid phase epitaxy has been used to produce single‐crystal garnet phosphor screens for cathode ray tubes. The films were rare‐earth‐doped yttrium aluminum garnets (YAG’s) grown onto YAG substrates using a PbO:B2O3 flux. We have studied the light output of these layers as a function of film growth temperature, rare‐earth activator concentration, and incident power density. With Ce:YAG layers it was possible to use beam power densities up to 108 W/m2 and this produced a radiance of over 105 W/cm2 sr.
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68.55.-a Thin film structure and morphology
78.60.Hk Cathodoluminescence, ionoluminescence

Cr profiles in semi‐insulating GaAs after annealing with and without SiO2 encapsulants in a H2‐As4 atmosphere

V. Eu, M. Feng, W. B. Henderson, H. B. Kim, and J. M. Whelan

Appl. Phys. Lett. 37, 473 (1980); http://dx.doi.org/10.1063/1.91735 (3 pages) | Cited 21 times

Online Publication Date: 23 July 2008

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The redistribution of Cr in semi‐insulating GaAs upon annealing at 860 °C can be greatly reduced by eliminating the use of a SiO2 encapsulant. The annealing schedule utilized a controlled atmosphere technique which insured the thermodynamic stability of the GaAs surfaces and had no tendency to getter Cr. The sample annealed with a SiO2 encapsulant showed a secondary‐ion‐mass‐spectroscopy‐measured minimum Cr concentration which was lower by a factor of 20–25 than the original, whereas the comparison of an annealed sample without the SiO2 cap had a minimum Cr concentration which was smaller by a factor of 2. The conversion near the surfaces of semi‐insulating Cr‐doped GaAs to moderately high‐conductivity n type upon annealing can be minimized by using the above technique without an encapsulant.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Hot‐carrier relaxation in photoexcited In0.53Ga0.47As

Jagdeep Shah, R. F. Leheny, R. E. Nahory, and M. A. Pollack

Appl. Phys. Lett. 37, 475 (1980); http://dx.doi.org/10.1063/1.91736 (3 pages) | Cited 24 times

Online Publication Date: 23 July 2008

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Photoluminescence spectra of In0.53Ga0.47As reveal the presence of hot carriers with effective temperatures as high as Tc ∼600 K. Variation of carrier temperature with excitation intensity identifies the LO phonon emission process as the dominant carrier cooling mechanism with hωLO=34 meV. Comparison with GaAs yields a hot‐carrier energy loss rate a factor of 3 smaller for the less polar In0.53Ga0.47As.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors

Detection of monolayer quantities of oxygen on silicon using energy‐dispersive x‐ray spectrometry

R. G. Musket and Y. E. Strausser

Appl. Phys. Lett. 37, 478 (1980); http://dx.doi.org/10.1063/1.91737 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The sensitivity of energy‐dispersive x‐ray spectrometry (EDXS) has been determined for the detection of oxygen in thin oxides on silicon. A detection limit of about one monolayer by EDXS was within a factor of 10 of that detected by Auger electron spectroscopy under the analysis conditions employed (i.e., 150 nA of 5‐keV electrons for 60 s). Measurements, including in situ sputter‐thinning of an oxide of known thickness, were performed in a standard Auger system with an ultrathin‐windowed Si(Li) x‐ray detector attached. A linear relationship between the oxide thickness and the O(K) x ray intensity was found for thicknesses up to 200 Å. Optimization of the EDXS arrangement by improving the solid angle for x‐ray detection and the x‐ray takeoff angle should improve the sensitivity for oxygen and other elements with atomic number Z⩾6.
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78.70.En X-ray emission spectra and fluorescence
79.20.Fv Electron impact: Auger emission
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Pulsed laser irradiation of lead‐implanted single‐crystal copper films

E. Rimini and J. E. E. Baglin

Appl. Phys. Lett. 37, 481 (1980); http://dx.doi.org/10.1063/1.91738 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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We have studied the effect of pulsed laser annealing on single‐crystal copper films implanted with lead to a concentration far in excess of equilibrium solid solubility. A Nd:YAG frequency‐doubled 50‐ns‐pulsed laser was used, with power density up to 2.4 J/cm2. Channeling of 2‐MeV helium ions was used to determine the concentration profile and degree of substitutionality of the lead both before and after laser irradiation. The near‐surface region is melted if irradiated with a laser pulse of adequate energy density. The Pb atoms are redistributed and some accumulate near the sample surface. The fraction of Pb atoms which remain substitutional is nearly the same for as‐implanted and laser‐irradiated samples. This indicates that the rapid quenching following laser annealing (∼1011 K/sec) is almost as effective in retaining Pb atoms in metastable solution in Cu as the original effective quenching (∼1014 K/sec) following Pb implantation. Furnace annealing at 250 °C for 30 min greatly reduces the substitutional fraction of Pb atoms, as expected.
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61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Precipitation and redistribution of oxygen in Czochralski‐grown silicon

Fumio Shimura, Hideki Tsuya, and Tsutomu Kawamura

Appl. Phys. Lett. 37, 483 (1980); http://dx.doi.org/10.1063/1.91739 (4 pages) | Cited 56 times

Online Publication Date: 23 July 2008

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Thermally induced oxygen precipitation and redistribution phenomena in Czochralski‐grown silicon crystals are investigated by means of transmission electron microscopy and differential‐infrared absorption (DIR). In order to investigate the role of thermal history and the oxygen supersaturated condition for oxygen precipitation, a two‐step annealing process is adopted. Evident existence of SiO2 (crystobalite) is observed in as‐grown crystals by DIR at 1225 cm−1. As a result, it is ascertained that oxygen precipitation does not occur by homogeneous nucleation depending on the ratio of supersaturated oxygen but occurs by heterogeneous nucleation. A model of a grown‐in nucleus for oxygen precipitation by heat treatment is also proposed.
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81.10.Fq Growth from melts; zone melting and refining
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

High‐performance backside‐illuminated Hg0.78Cd0.22Te/CdTe (λCO=10 μm) planar diodes

M. Chu, A. H. B. Vanderwyck, and D. T. Cheung

Appl. Phys. Lett. 37, 486 (1980); http://dx.doi.org/10.1063/1.91740 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Planar infrared photodiodes have been fabricated on Hg1−xCdxTe (x=0.22) epitaxial layers which were grown on CdTe substrates by the liquid phase epitaxy technique. The n+‐p junctions were formed by ion implantation. The R0A products of the diodes have been measured to be ∼105 Ω cm2 at 40 K and ∼107 Ω cm2 at 20 K. These R0A values are believed to be the highest ever reported for HgCdTe photodiodes with comparable cutoff wavelengths. It was found that between 77 and 40 K the diode R0A was limited by generation‐recombination current. Effects of field plate bias on diode properties were also analyzed.
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72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Photoelectrochemistry with p‐Si electrodes: Effects of inversion

J. A. Turner, J. Manassen, and A. J. Nozik

Appl. Phys. Lett. 37, 488 (1980); http://dx.doi.org/10.1063/1.91741 (4 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Reduction of chemical species with redox potentials above the apparent conduction band edge of p‐Si were found to be possible with illuminated p‐Si in contact with nonaqueous electrolytes. Analysis of the wavelength dependence of the photoreduction current and capacitance data as a function of electrode potential, ac signal frequency, and light intensity shows that this supra‐conduction‐band‐edge reduction is the result of band‐edge unpinning, rather than the result of a hot‐electron injection process. The band‐edge unpinning is caused by the formation of an inversion layer in illuminated p‐Si.
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82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion
73.40.Mr Semiconductor-electrolyte contacts

Improvement of the room‐temperature behavior of metal tritides with respect to 3He release: Titanium

Pierre Bach

Appl. Phys. Lett. 37, 492 (1980); http://dx.doi.org/10.1063/1.91742 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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In aged titanium tritide Ti 3 Hex thin films the 3He local critical concentration is slightly technology dependent and appears not to depend on the initial overall tritium concentration for x values lower than 1.5, which in fact results from a two‐phase system: Ti and Ti 3H1.5. As it is not possible to increase significantly the lifetime of titanium tritide films by simply lowering their tritium concentration, a different method is proposed, based on deutero‐tritide films. This method can be extended to other tritides. Experimental values of 3He critical concentration in aged Ti 3Hx thin films are also determined.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.80.Lj Atom and molecule irradiation effects

An electrochemical transistor using a solid electrolyte

Robert E. Hetrick and W. C. Vassell

Appl. Phys. Lett. 37, 494 (1980); http://dx.doi.org/10.1063/1.91802 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Transistor action has been observed at elevated temperatures (800 °C) with a structure composed of two ceramic ZrO2 electrochemical cells separated by an enclosed volume. One cell emits O2 from an ambient atmosphere into the volume (base region) where it is collected and returned to the ambient by the opposing cell. Electrical operation can be understood in terms of the current limitation presented by the Pt cathode of the collector cell. Small signal voltage, current, and power amplification are observed with a frequency response limited by the double‐layer capacity of the collector. This approach to transistor action should be applicable to other solid‐electrolyte systems.
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85.80.-b Thermoelectromagnetic and other devices
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