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15 Sep 1980

Volume 37, Issue 6, pp. 503-579

Page 1 of 2 Pages Next Page | Jump to Page

Improvement of GaAs‐GaAlAs double‐heterostructure laser wafer by Ga1−xAlxAs buffer layer

K. Shima, M. Morimoto, H. Imai, T. Fujiwara, and M. Takusagawa

Appl. Phys. Lett. 37, 503 (1980); http://dx.doi.org/10.1063/1.91990 (3 pages)

Online Publication Date: 23 July 2008

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The optically induced degradation in GaAs‐GaAlAs double‐heterostructure (DH) laser wafers is examined at elevated temperatures. The degradation of the photoluminescence properties by optical pumping is considered to originate at the interface between an n‐GaAlAs clad layer and a p‐GaAs active layer, as it is greatly reduced by the insertion of a thin Ga1−xAlxAs buffer layer (x∼0.05, ∼0.05 μm thick) between these two layers. The degradation rate during optical pumping is correlated to laser life. The lasers fabricated from the DH wafers with the Ga1−xAlxAs buffer layer are still operating after 2000 h at 70 °C, whereas lasers without the buffer layer are inoperative after a few hundred hours.
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42.55.Px Semiconductor lasers; laser diodes
61.72.-y Defects and impurities in crystals; microstructure
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
79.20.Ds Laser-beam impact phenomena

Thermal diffusivity measurements using a pulsed dual‐beam thermal lens technique

Mool C. Gupta, Su‐Don Hong, Amitava Gupta, and Jovan Moacanin

Appl. Phys. Lett. 37, 505 (1980); http://dx.doi.org/10.1063/1.91991 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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A novel pulsed dual‐beam thermal lens technique for the determination of thermal diffusivity of liquids and solids was developed. In this technique a transient thermal lens is formed in the test specimen by using a dye laser pulse as a heating source and the thermal lens decay is monitored by means of a cw He‐Ne laser. The technique is fast and contactless and avoids some of the major difficulties of conventional methods. Thermal diffusivities for water and a polycarbonate plastic were measured and found to be in agreement with literature values. Considerable simplification and minimization of certain errors was achieved by use of a reference material.
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05.70.Ce Thermodynamic functions and equations of state
42.62.-b Laser applications
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)
61.41.+e Polymers, elastomers, and plastics

Reciprocity between the reflection electron microscope and the low‐loss scanning electron microscope

Oliver C. Wells

Appl. Phys. Lett. 37, 507 (1980); http://dx.doi.org/10.1063/1.91992 (4 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The reflection electron microscope image—or, more correctly, the dark‐field image from a solid specimen in the transmission electron microscope—has certain similarities to the low‐loss electron image in the scanning electron microscope. These methods are reciprocal in the sense that it is possible to establish an equivalence by reversing the direction of the electrons through the system. In both cases the scanning version is better suited for imaging by means of wide‐angle scattering events, while the nonscanning version is better suited for diffraction contrast. The equivalence between these two methods can be established by either a wave‐optical or a geometrical argument.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams
61.05.jd Theories of electron diffraction and scattering
79.20.Kz Other electron-impact emission phenomena

Visual observations of macroscopic inhomogeneous broadening of the R1 line in ruby

P. E. Jessop and A. Szabo

Appl. Phys. Lett. 37, 510 (1980); http://dx.doi.org/10.1063/1.91993 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Observation of sharp spatial variations of the R1 fluorescence of ruby at 5 K resonantly excited by a 1-MHz-linewidth scanning cw dye laser indicates the presence of gross macroscopic strain broadening in Czochralski and Verneuil crystals. The implications of these results in several current studies are discussed.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
61.72.-y Defects and impurities in crystals; microstructure

Reduction of scattering from a glass thin‐film optical waveguide by CO2 laser annealing

Subhadra Dutta, Howard E. Jackson, and J. T. Boyd

Appl. Phys. Lett. 37, 512 (1980); http://dx.doi.org/10.1063/1.91994 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Laser annealing with a CO2 laser is utilized to improve the quality of Corning 7059 glass thin‐film optical waveguides. The 1.0‐μm‐thick 7059 glass film is deposited by sputtering onto a thermally oxidized silicon substrate. Measurement of the absorption coefficient of 7059 glass at λ = 10.6 μm yields a value of 1.12 x 104 cm−1. Dark‐field photomicrographs taken before and after laser annealing imply that both surface defects and bulk inhomogeneities are removed by laser annealing. Waveguide attenuation is measured to be 17.4 dB/cm befor laser annealing and 0.6 dB/cm afterwards.
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81.40.Tv Optical and dielectric properties related to treatment conditions
75.20.Ck Nonmetals
68.60.-p Physical properties of thin films, nonelectronic

Fast frequency modulation of a far‐infrared laser with a Schottky barrier diode

A. Godone, A. De Marchi, and E. Bava

Appl. Phys. Lett. 37, 514 (1980); http://dx.doi.org/10.1063/1.91995 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Fast frequency modulation of a far‐infrared laser by means of the varactor effect in a micron‐size Schottky barrier diode is presented. A cavity tuning experiment carried out with the optically pumped HCOOH line at 403.7 GHz and a Pt–n‐GaAs diode is described. Modulation depth of about 15 kHz with a bandwidth of approximately 2 MHz has been achieved.
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42.60.Fc Modulation, tuning, and mode locking

Elimination of dispersion‐induced distortion in infrared absorption spectra by use of photoacoustic spectroscopy

G. Laufer, J. T. Huneke, B. S. H. Royce, and Y. C. Teng

Appl. Phys. Lett. 37, 517 (1980); http://dx.doi.org/10.1063/1.91996 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Fourier transform infrared photoacoustic techniques have been employed to remove the spectral distortion present in the transmission and reflectance spectra of powdered solids suspended in mulls and pressed pellets. Results are presented for AgCN. The photoacoustic data is also compared to that obtained by Raman spectroscopy.
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78.30.-j Infrared and Raman spectra
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Sensitive in situ trace‐gas detection by photothermal deflection spectroscopy

D. Fournier, A. C. Boccara, Nabil M. Amer, and Robert Gerlach

Appl. Phys. Lett. 37, 519 (1980); http://dx.doi.org/10.1063/1.91970 (3 pages) | Cited 52 times

Online Publication Date: 23 July 2008

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We present a sensitive (5ppb for ethylene, 10−7 cm−1) and simple photothermal scheme for the detection of trace gases and measuring weak absorption in gas‐phase samples. We also demonstrate the feasibility of this scheme for performing in situ measurements in the absence of sample cells or containers, thus eliminating the drawbacks of sampling and sampling techniques. Factors limiting our detectivity are discussed, and a comparison to the thermal lens effect is made.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
42.68.Ge Effects of clouds and water; ice crystal phenomena
42.68.Kh Effects of air pollution
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Accessibility of the KrF∗(B) state to laser photons

J. H. Jacob, Daniel W. Trainor, M. Rokni, and J. C. Hsia

Appl. Phys. Lett. 37, 522 (1980); http://dx.doi.org/10.1063/1.91971 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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Using electron beam excitation of Ar/Kr/F2 mixtures in a 1‐m laser, we monitored KrF∗(B) sidelight fluorescence of the 249‐nm B→X transition. Comparing signals observed in the presence and absence of cavity flux, we evaluated the ability of the photon field to depopulate the upper laser level by stimulated emission. From these experiments, we concluded that some of the KrF∗ population was in higher vibrational levels and could not be effectively extracted by stimulated emission at the normal laser operating wavelength.
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31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.20.Rp State to state energy transfer

Use of a concentric‐arc grating as a thin‐film spectrograph for guided waves

P. K. Tien and R. J. Capik

Appl. Phys. Lett. 37, 524 (1980); http://dx.doi.org/10.1063/1.91972 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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We describe a thin‐film spectrograph for guided optical or surface acoustic waves which involves wave diffraction from a concentric‐arc grating in a slab waveguide. In this spectrograph, diffracted waves in the waveguide form spectra of various orders which are in focus on a circle similar to the Rowland circle of an ordinary grating spectrograph. The optics described above may also be used for acousto‐optic deflection, integrated optic spectrum analyzers, and other applications.
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42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers
42.25.Fx Diffraction and scattering

Laser noise in fiber‐optic interferometer systems

A. Dandridge, A. B. Tveten, R. O. Miles, and T. G. Giallorenzi

Appl. Phys. Lett. 37, 526 (1980); http://dx.doi.org/10.1063/1.91973 (3 pages) | Cited 16 times

Online Publication Date: 23 July 2008

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The amplitude stability of single‐mode channeled‐substrate planar diode lasers has been measured as a function of frequency (100 Hz–1 MHz) and driving current. The relative noise spectrum showed a decrease with increasing frequency and an overall reduction at all frequencies as the output power of the laser was increased. These results are compared with similar measurements of the most stable commercial single‐mode HeNe lasers. The problems of laser amplitude noise in fiber‐optic sensor systems is briefly discussed.
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42.79.Gn Optical waveguides and couplers
07.60.Ly Interferometers
43.50.+y Noise: its effects and control

Limitations on luminance characteristics of gas‐discharge color display panels

Shigeo Mikoshiba and Seiichi Murayama

Appl. Phys. Lett. 37, 529 (1980); http://dx.doi.org/10.1063/1.91974 (2 pages) | Cited 31 times

Online Publication Date: 23 July 2008

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Relations between electrical input and optical output of gas‐discharge display panels are developed in which resonance radiation from the xenon negative glow is employed to excite phosphor of appropriate color. A panel having optimized cell configuration for maximum luminance can yield white‐area luminance of only 10 fL at most when reproducing TV images using a one line at a time addressing technique. The optimization reduces the luminous efficiency to an unrealistically low value.
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52.80.-s Electric discharges
52.80.Hc Glow; corona
32.30.Jc Visible and ultraviolet spectra

Studies of an unneutral electron cloud confined in a multiple‐mirrored toroidal magnetic fielda)

A. Fisher, P. Gilad, F. Goldin, and N. Rostoker

Appl. Phys. Lett. 37, 531 (1980); http://dx.doi.org/10.1063/1.91975 (2 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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An unneutral electron cloud of 3×1013 electrons with a number density of 1011 cm−3 was compressed and confined by a multiple‐mirrored toroidal magnetic field. The radial electric field associated with this electron cloud was about 105 V/cm. The electrons, having a large magnetic moment, were confined by the magnetic mirrors. An upper limit of 1 A was set on the induced current when a toroidal electric field of 10 V/cm was applied. This puts a limit n<4×108 cm−1 on the line density of electrons with perpendicular energy lower than 300 eV.
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52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices
52.75.Di Ion and plasma propulsion

Energy absorption and transport in layered targets irradiated by a relativistic electron beam

K. Imasaki, S. Miyamoto, S. Higaki, S. Nakai, K. Nishihara, and C. Yamanaka

Appl. Phys. Lett. 37, 533 (1980); http://dx.doi.org/10.1063/1.91969 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The dynamic behavior of a blowoff plasma of a thin‐layered target was observed optically by shadowgraphy. The results are explained by means of ablative and explosive models. Experimental evidence of highly efficient beam coupling which includes hydrodynamic driving of the plasma is presented.
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52.40.Mj Particle beam interactions in plasmas
52.50.Gj Plasma heating by particle beams
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

White photoluminescence of amorphous silicon‐carbon alloy prepared by glow‐discharge decomposition of tetramethylsilane

Hiro Munekata, Shigetaka Murasato, and Hiroshi Kukimoto

Appl. Phys. Lett. 37, 536 (1980); http://dx.doi.org/10.1063/1.91976 (2 pages) | Cited 35 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
An amorphous film of silicon‐carbon alloy with approximate composition Si0.1C0.9 was prepared on a fused‐quartz, a glass, or a silicon wafer by the glow‐discharge decomposition of tetramethylsilane. The film has an optical gap energy as large as 2.8 eV and shows white photoluminescence even at room temperature due to its broad emission band over the whole range of the visible spectrum. The photoluminescence is observable for the films deposited at substrate temperatures below 300 °C.
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78.55.Hx Other solid inorganic materials
81.05.Kf Glasses (including metallic glasses)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates

Chin‐An Chang, C. M. Serrano, L. L. Chang, and L. Esaki

Appl. Phys. Lett. 37, 538 (1980); http://dx.doi.org/10.1063/1.91977 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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We have used the cross‐sectional transmission electron microscope to study InAs grown by molecular beam epitaxy. For the InAs films directly grown on GaAs, the dislocation density at the InAs‐GaAs interface is several orders of magnitude higher than that in the bulk films. Those grown by the step grading technique show strong interactions among dislocations at the interfaces, and a much reduced dislocation density in the thin InAs layers.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

High‐temperature contact structures for silicon semiconductor devices

Marc Wittmer

Appl. Phys. Lett. 37, 540 (1980); http://dx.doi.org/10.1063/1.91978 (3 pages) | Cited 44 times

Online Publication Date: 23 July 2008

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While thin films of TiN and TaN are good diffusion barriers in contact structures which use nickel or gold as a top layer, they show poor barrier properties if aluminum is used as a top layer. It is shown in this letter that stable high‐temperature contacts on silicon semiconductor devices can be produced by using intermetallic compounds of aluminum in combination with TiN and TaN as barrier materials instead of pure aluminum.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.60.-p Physical properties of thin films, nonelectronic

Interaction of a pulsed XeF laser with an aluminum surface

C. Duzy, J. A. Woodroffe, J. C. Hsia, and A. Ballantyne

Appl. Phys. Lett. 37, 542 (1980); http://dx.doi.org/10.1063/1.91979 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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The interaction of XeF laser radiation at 353 nm with an aluminum target in air at reduced (0.1 Torr) and ambient pressures has been studied. The thermal coupling at moderate fluxes (106–108 W/cm2) and long pulse length at 0.1 Torr was found to be ∼20%. Impulse coupling was also determined.
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79.20.Ds Laser-beam impact phenomena

Hall measurements and grain‐size effects in polycrystalline silicon

Amal K. Ghosh, Albert Rose, H. Paul Maruska, Daniel J. Eustace, and Tom Feng

Appl. Phys. Lett. 37, 544 (1980); http://dx.doi.org/10.1063/1.91980 (3 pages) | Cited 18 times

Online Publication Date: 23 July 2008

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The effects of grain size on Hall measurements in polycrystalline silicon are analyzed and interpreted, with some modifications, using the model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space‐charge regions. For materials with large grain sizes, the carrier concentration is independent of the intergrain boundary barrier, whereas the mobility is dependent on it. However, for small grains, both the carrier density and mobility depend on the barrier. These predictions are consistent with experimental results of mm‐size Wacker and μm‐size neutron‐transmutation‐doped polycrystalline silicon.
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72.20.My Galvanomagnetic and other magnetotransport effects
61.72.Mm Grain and twin boundaries

Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

M. Eizenberg, H. Föll, and K. N. Tu

Appl. Phys. Lett. 37, 547 (1980); http://dx.doi.org/10.1063/1.91981 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross‐sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current‐voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n‐Si.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.-r Electrical properties of specific thin films
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Schottky barrier Ga1−xAlxAs1−ySby alloy avalanche photodetectors

R. Chin, H. D. Law, K. Nakano, and R. A. Milano

Appl. Phys. Lett. 37, 550 (1980); http://dx.doi.org/10.1063/1.91982 (2 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Schottky barrier avalanche photodiodes have been fabricated in Ga1−xAlxAs1−ySby. The devices are planar and have semitransparent Au barriers. In addition, these detectors exhibit uniform photoresponse and dark current densities of ∼2.7×10−3 A/cm3 at the voltages where avalanche gains of 2 to 4 have been measured. This is the first report of avalanche gain in such a structure in the Ga1−xAlxAs1−ySby alloy system.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
72.40.+w Photoconduction and photovoltaic effects
79.20.Kz Other electron-impact emission phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

An insulated‐gate charge transfer device on InP

D. L. Lile and D. A. Collins

Appl. Phys. Lett. 37, 552 (1980); http://dx.doi.org/10.1063/1.91983 (2 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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A three‐phase, single‐cell insulated‐gate charge‐coupled device on p‐type InP is reported which demonstrates the potential of this material for charge transfer applications. Charge transfer efficiencies ≳99.5% have been observed for devices operating at clock rates up to 50 MHz.
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85.30.Tv Field effect devices
72.80.Ey III-V and II-VI semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Thin‐film electroluminescence in impurity‐doped Al2O3

S. L. McCarthy and John Lambe

Appl. Phys. Lett. 37, 554 (1980); http://dx.doi.org/10.1063/1.91984 (2 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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The discovery of a new thin‐film electroluminescence system based on impurity‐doped anodic aluminum oxide is reported. Average brightnesses of 30 f L have been observed for devices at room temperature operating at 1 kHz biased at 60 V rms, resulting in 7 mA electronic current and a 10% duty cycle. A new stabilizing layer of manganese oxide permits long‐term operation without catastrophic breakdown. While electrical stability is achieved, loss in electroluminescence efficiency is apparent, possibly due to electromigration of the impurity ions.
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78.60.Fi Electroluminescence
72.20.Ht High-field and nonlinear effects
73.40.Rw Metal-insulator-metal structures
73.61.Ng Insulators

100‐GHz Gunn diodes fabricated by molecular beam epitaxy

W. H. Haydl, S. Smith, and R. Bosch

Appl. Phys. Lett. 37, 556 (1980); http://dx.doi.org/10.1063/1.91985 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Epitaxial GaAs layers of high purity suitable for Gunn devices have been grown by molecular beam epitaxy. Layers with a carrier concentration in the 1015‐cm−3 range and a mobility of 5–7000 cm2 V−1 s−1 (300 K) have been used to develop integral‐heat‐sink millimeter‐wave Gunn diodes in the 50–110‐GHz range. To date we have obtained cw rf outputs of 10 mW at 100 GHz and 4 mW at 110 GHz.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Temperature dependence of intergrain barriers in polycrystalline semiconductor films

J. W. Orton, B. J. Goldsmith, M. J. Powell, and J. A. Chapman

Appl. Phys. Lett. 37, 557 (1980); http://dx.doi.org/10.1063/1.91986 (3 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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The Petritz theory of Hall mobility in polycrystalline semiconductor films predicts that μH=μ0 exp(−ϕb/kT) where ϕb is the intergrain barrier height and μ0 depends only weakly on temperature. Careful examination of experimental results in the literature reveals that, in practice, μ0 varies strongly with ϕb, an anomaly which can be understood if ϕb is temperature dependent. We present the results of Hall and resistivity measurements on CdS films which support this interpretation and yield a value for the temperature coefficient α=(1/ϕb)∂ϕb/∂T=−0.0022 K−1. This compares with a value of α≃−0.003 K−1 reported by Seager and Pike for silicon bicrystals.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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