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1 Oct 1980

Volume 37, Issue 7, pp. 583-668

Page 1 of 2 Pages Next Page | Jump to Page

A free‐electron laser pump produced by magnetic diffusion

K. D. Jacobs, R. E. Shefer, and G. Bekefi

Appl. Phys. Lett. 37, 583 (1980); http://dx.doi.org/10.1063/1.92010 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Magnetic diffusion through a spatially periodic assembly of metal conductors yields a large‐amplitude pump for use in free‐electron lasers. Experiments and computations which test the performance of the pump are presented.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Two‐dimensional focusing holographic grating coupler

D. Heitmann and R. V. Pole

Appl. Phys. Lett. 37, 585 (1980); http://dx.doi.org/10.1063/1.92011 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Two‐dimensional focusing grating couplers have been produced using holographic interferometry with freely propagating wave fronts. Theoretical considerations lead to an optimized holographic arrangement. Experimental grating couplers with 2.2‐μm focus‐spot diameter have been achieved.
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42.82.-m Integrated optics
42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers
42.40.My Applications

Noise characteristics of semiconductor laser diodes coupled to short optical fibers

Y. C. Chen

Appl. Phys. Lett. 37, 587 (1980); http://dx.doi.org/10.1063/1.92012 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The noise character of semiconductor laser diodes coupled to short optical fibers is found to exhibit increased noise power peaked on the low‐frequency side of the intrinsic noise profile. The phenomenon has been observed in laser diodes with and without self‐sustained oscillations below 1.8 GHz and can be explained as a downshift in frequency of the intrinsic resonance due to the coupling of the laser cavity and the short optical fiber. This effect may introduce higher noise at frequencies where light‐wave communication systems operate even though the laser diodes themselves are very quiet.
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42.55.Px Semiconductor lasers; laser diodes
42.81.-i Fiber optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A double‐electrode‐pair‐pulsed laser

Jay A. Fox

Appl. Phys. Lett. 37, 590 (1980); http://dx.doi.org/10.1063/1.92013 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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A transversely excited atmosphere carbon dioxide laser with two sets of electrode in the optical cavity is described. The device produces high‐intensity pulse pairs with time separations as short as 20×10−6 sec. This is accomplished without high‐speed gas flow.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optically pumped NSF molecular laser

T. A. Fischer, J. J. Tiee, and C. Wittig

Appl. Phys. Lett. 37, 592 (1980); http://dx.doi.org/10.1063/1.92014 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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An optically pumped NSF laser, with tunable output in the region 618–658 cm−1, and pumped with a tunable transversely excited atmosphere (TEA) CO2 laser, is described. This laser promises to be an attractive source for laser isotope separation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
33.80.Be Level crossing and optical pumping

Stimulated Raman scattering from 20‐Å layers of silicon on sapphire

B. F. Levine, C. G. Bethea, A. R. Tretola, and M. Korngor

Appl. Phys. Lett. 37, 595 (1980); http://dx.doi.org/10.1063/1.92098 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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We have developed a novel triply modulated stimulated Raman gain spectrometer which reduces unwanted background effects by over 105. This has allowed the high resolution (Δν=1 cm−1) measurement of 20 Å of Si on sapphire with a signal‐to‐noise ratio of 100, with only 2 min of data collection. This sensitivity is several orders of magnitude larger than spontaneous Raman scattering.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.-v Laser optical systems: design and operation
42.50.-p Quantum optics
78.45.+h Stimulated emission

Picosecond optical sampling technique for measuring the speed of fast electro‐optic switch/modulators

R. C. Alferness, N. P. Economou, and L. L. Buhl

Appl. Phys. Lett. 37, 597 (1980); http://dx.doi.org/10.1063/1.92099 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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We propose and demonstrate a new technique for measuring the pulse response of fast electro‐optic switch/modulators. Using synchronized trains of electrical drive pulses and picosecond optical sampling pulses, switching times as short as ∼50 psec can be measured without requiring a fast photodiode.
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42.79.Hp Optical processors, correlators, and modulators
06.60.Jn High-speed techniques (microsecond to femtosecond)

Measurement of DT neutron‐induced activity in glass‐microshell laser fusion targets

Stephen M. Lane, E. Michael Campbell, and Charles Bennett

Appl. Phys. Lett. 37, 600 (1980); http://dx.doi.org/10.1063/1.92032 (2 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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Laser fusion targets consisting of DT gas contained in Teflon‐coated glass microshells produce 14.1‐MeV neutrons that can interact with the 28Si nuclei in the glass to produce radioactive 28Al. Using a very efficient collection‐detection scheme that could detect the decay of 10% of the 28Al created, we identified these nuclei by their 1.78‐MeV γ ray, which decayed with a 2.2‐min half‐life. From the number of 28Al nuclei created and the neutron yield the compressed glass areal density was found to be 0.0059 g/cm2.
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25.40.Fq Inelastic neutron scattering
42.62.-b Laser applications
82.30.-b Specific chemical reactions; reaction mechanisms
52.70.-m Plasma diagnostic techniques and instrumentation

Observation of asymmetric electric field around laser‐imploded target

H. Shiraga, T. Mochizuki, and C. Yamanaka

Appl. Phys. Lett. 37, 602 (1980); http://dx.doi.org/10.1063/1.92033 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Strong anisotropy on angular distribution of alpha particles in D‐T reaction was observed in locally irradiated exploding pusher mode compression. This indicates asymmetric generation of an electric field localized around the laser irradiated spots whose scale length and shape were estimated to be about 300 μm and radially extended from the irradiated spots.
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52.70.Nc Particle measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
79.20.Ds Laser-beam impact phenomena

Electron diffraction studies of Ag photodoping in GexSe1−x glass films

C. H. Chen and K. L. Tai

Appl. Phys. Lett. 37, 605 (1980); http://dx.doi.org/10.1063/1.92034 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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GexSe1−x glass films (with x=0.1 and 0.33) when immersed in an Ag‐containing solution such as KAg(CN)2 show additonal sharp polycrystalline diffraction rings which can be identified as due to the formation of crystalline domains of Ag2Se and its oxide. These polycrystalline rings are found to disappear gradually with increasing UV exposure. Typical UV exposure time required to make the polycrystalline pattern disappear is ∼20 sec for x=0.33 and 2 sec for x=0.1 with power incident at the sample ∼70 mW/cm2.
Show PACS
61.72.U- Doping and impurity implantation
61.05.J- Electron diffraction and scattering
61.66.Fn Inorganic compounds
82.50.-m Photochemistry

Enhancement of second‐harmonic generation in LiNbO3 crystals with periodic laminar ferroelectric domains

Duan Feng, Nai‐Ben Ming, Jing‐Fen Hong, Yong‐Shun Yang, Jin‐Song Zhu, Zhen Yang, and Ye‐Ning Wang

Appl. Phys. Lett. 37, 607 (1980); http://dx.doi.org/10.1063/1.92035 (3 pages) | Cited 110 times

Online Publication Date: 23 July 2008

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Using the Czochralski method we have grown LiNbO3 crystals with periodic laminar ferroelectric domains whose half‐period nearly corresponds to the coherence length. Quasi‐phase‐matching for the nonlinear optical coefficient d33 has been approximately realized and enhancement of second‐harmonic generation relative to conventionally phase‐matched crystals of the same length has been observed.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.10.Fq Growth from melts; zone melting and refining

Conductivity changes in dehydrogenated and rehydrogenated discharge‐produced a‐Si:H

D. L. Staebler and J. I. Pankove

Appl. Phys. Lett. 37, 609 (1980); http://dx.doi.org/10.1063/1.92036 (4 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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The dark and photoconductivity of a‐Si:H was measured after in‐ and out‐diffusion of hydrogen. The results agreed with the expected variations in the density of uncompensated dangling bonds. Secondary‐ion mass spectrometry profiles confirmed the changes in hydrogen concentration. Samples doped with phosphorus behaved differently from undoped samples. Annealing above 400 °C quenched the optically induced conductivity changes found in a‐Si:H.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Pulse annealing deficiencies in GaAs

D. Eirug Davies, J. P. Lorenzo, and T. G. Ryan

Appl. Phys. Lett. 37, 612 (1980); http://dx.doi.org/10.1063/1.92037 (4 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Heavily doped epitaxial GaAs has been subjected to pulse electron beam annealing. Differential Hall measurements indicate that the annealing causes a reduction in the majority carrier density and severely curtails the carrier mobility. The thickness of such affected material is increased with any subsequent heat treatment. These results suggest that compensating defects are produced by the pulse annealing and that these migrate inwards from the surface during thermal annealing. It is considered that such defects account for the general failure to activate low‐dose implants, the loss of high‐dose activation with moderate heat treatment, and the invariably poor mobilities within pulse‐annealed implanted layers.
Show PACS
61.72.U- Doping and impurity implantation
61.80.Fe Electron and positron radiation effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Effect on electrical properties of segregation of implanted P+ at defect sites in Si

D. K. Sadana, M. Strathman, J. Washburn, C. W. Magee, M. Mäenpää, and G. R. Booker

Appl. Phys. Lett. 37, 615 (1980); http://dx.doi.org/10.1063/1.92038 (4 pages) | Cited 18 times

Online Publication Date: 23 July 2008

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The aim of this work was to study the furnace annealing behavior of buried amorphous layers formed due to P+ implantation into Si and to investigate the effects of annealing on the electrical properties of the implanted layer. For this purpose, P+ was implanted into (111) Si in a non‐channeling direction at 120 KeV to a dose of 3 × 1014/cm2 at RT. The implanted samples were subsequently annealed at 750° C. 90° cross‐sectional transmission electron microscopy (TEM), MeV He+ channeling, secondary‐ion mass spectrometry (SIMS), and electrical results were obtained from the same specimen. The TEM results showed that the annealing at 750° C resulted in the formation of two discrete damage layers at depths of 600 and 1100Å. However, the MeV channeling measurement indicated the presence of three damage regions; the third region being beyond the second damage layer observed by TEM. The SIMS measurements showed pronounced ’’pileups’’ of phosphorus atoms at three damage regions. The carrier‐concentration profile followed the atomic distribution curve. However, the mobility profile showed decreases only at the two deeper‐lying regions.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Anomalous thermal expansion in amorphous Fe78Mo2B20

Somdev Tyagi, Jerry Steinberg, and Arthur E. Lord

Appl. Phys. Lett. 37, 618 (1980); http://dx.doi.org/10.1063/1.92100 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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The amorphous Fe78Mo2B20 alloy exhibits anomalous thermal expansion upon annealing. Two transitions in the magnetic structure are observed at approximately 210 and 315 °C. This is possibly because of the phase separation that takes place in the crystallization sequence in the amorphous alloys.
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75.50.Bb Fe and its alloys
81.05.Kf Glasses (including metallic glasses)
81.40.Gh Other heat and thermomechanical treatments

The use of Young’s modulus to monitor relaxation in metallic glasses

A. Kursumovic and M. G. Scott

Appl. Phys. Lett. 37, 620 (1980); http://dx.doi.org/10.1063/1.91997 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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The kinetics of change of Young’s modulus E during isothermal relaxation and crystallization of an all‐metal glass Cu60Zr40 has been measured by a pulse‐echo technique. E increases by about 10% between the as‐quenched and fully relaxed states. Crystallization of the glass produces a further 15% increase in E. The kinetics of the relaxation process can be fitted to an expression of the form ΔE=a ln t+b. a)On leave from the Institute of Physics, Saragevo, Yugoslavia.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
62.20.D- Elasticity

A new intrinsic gettering technique using microdefects in Czochralski silicon crystal: A new double preannealing technique

K. Nagasawa, Y. Matsushita, and S. Kishino

Appl. Phys. Lett. 37, 622 (1980); http://dx.doi.org/10.1063/1.91998 (3 pages) | Cited 32 times

Online Publication Date: 23 July 2008

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A new intrinsic gettering technique using microdefects in Czochralski‐grown silicon wafers is proposed where a new double preannealing technique is applied to the wafer before the conventional silicon process. In the first step, high temperature (∼1000 °C), nonoxygen ambient annealing is carried out in order to diffuse dissolved oxygen from near the wafer surface. In the second step, extremely low‐temperature (∼650 °C) annealing is added to introduce a high density of microdefects in the inner part of the wafer. This produces a wafer having both a nearly perfect denuded zone near the surface and a gettering site region in its bulk, regardless of the original quality of the wafer. This technique has proved to be effective in eliminating ion‐implanation oxidation‐induced stacking faults.
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61.72.Nn Stacking faults and other planar or extended defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.Jh Ion radiation effects
81.40.Gh Other heat and thermomechanical treatments

A direct observation of the trapping of deuterium ions at a grain boundary in tungsten

G. L. Kellogg and J. K. G. Panitz

Appl. Phys. Lett. 37, 625 (1980); http://dx.doi.org/10.1063/1.91999 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The imaging atom‐probe/field ion microscope has been used to study the trapping of low‐energy deuterium ions in tungsten. The experimental results indicate that implanted deuterium does not remain trapped in a tungsten lattice at room temperature for a period of several days unless a defect is present. Time‐gated imaging atom‐probe images show the first direct correlation between the trapped deuterium and the presence of a grain boundary on an atomic scale. Comparing these results to secondary‐ion mass spectrometer and nuclear reaction analyses of simultaneously exposed, flat tungsten, and silicon samples indicates that the imaging atom‐probe is sensitive to low levels of hydrogen concentration at lattice defects that are invisible to these other two techniques. The implications of the experiment relating to tokamak plasma‐wall and hydrogen embrittlement studies are discussed.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Mm Grain and twin boundaries
79.70.+q Field emission, ionization, evaporation, and desorption
61.72.U- Doping and impurity implantation

GaAs integrated circuits by selected‐area molecular beam epitaxy

G. M. Metze, H. M. Levy, D. W. Woodard, C. E. C. Wood, and L. F. Eastman

Appl. Phys. Lett. 37, 628 (1980); http://dx.doi.org/10.1063/1.92000 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Working GaAs integratted logic elements have been fabricated using selected‐area molecular beam epitaxy. Thermally grown native oxides ∼250 Å thick have been used to define regions of single‐crystalline device‐quality GaAs in a matrix of semi‐insulating polycrystalline GaAs. The planarity of this process and the inherent resistivity of the polycrystalline GaAs ( ρ≳105 Ω cm) have been used in the fabrication of working NAND and NOR logic gates (Schottky diode/field‐effect transistor logic).
Show PACS
85.30.-z Semiconductor devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ion‐beam shadow printing through thin silicon foils using channeling

L. Csepregi, F. Iberl, and P. Eichinger

Appl. Phys. Lett. 37, 630 (1980); http://dx.doi.org/10.1063/1.92001 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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A masking concept for ion‐beam shadow printing is described. Resist layers have been exposed through thin single‐crystal silicon foils in the channeling direction, using a collimated helium beam with an initial energy of 300–2000 keV. The masking technique employs the dechanneling effect of a thin metal layer as well as the difference in energy loss for random and for channeling directions. The method is suitable for the replication of high‐resolution structures using proximity exposure.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
07.68.+m Photography, photographic instruments; xerography
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

High rate deposition of thick piezoelectric ZnO films using a new magnetron sputtering technique

Tomonobu Hata, Etsuji Noda, Osamu Morimoto, and Toshio Hada

Appl. Phys. Lett. 37, 633 (1980); http://dx.doi.org/10.1063/1.92002 (3 pages) | Cited 17 times

Online Publication Date: 23 July 2008

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ZnO films were prepared on glass substrates with a new reactive magnetron sputtering technique using a zinc target. A solenoid coil around a bell jar was used to cause an increase in the parallel component of the leakage lines to the target surface. Highly oriented ZnO films (c‐axis orientation) were fabricated on the glass substrates. The deposition rate increases with increasing discharge current, and it attains 15 μm/h for (O2 50%:Ar50%), 11 μm/h for (81.5%:18.5%), and 9 μm/h for 100% oxygen. These films were obtained at a 500‐mA discharge current and a 0.2‐Torr total gas pressure. Resistivities of the films were 106–109 Ω cm. A piezoelectric coupling constant of thick ZnO films (∼30 μm) was obtained by measuring a frequency response of transducer impedance near the fundamental resonance frequency of the interdigital electrode. Experimental results were about 80% of the theoretical values.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
77.65.-j Piezoelectricity and electromechanical effects

Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress

T. J. Magee, K. S. Lee, R. Ormond, C. A. Evans, R. J. Blattner, and C. Hopkins

Appl. Phys. Lett. 37, 635 (1980); http://dx.doi.org/10.1063/1.92003 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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Motion and gettering of Cr into damage regions of B‐implanted GaAs samples has been investigated using transmission electron microscopy and secondary‐ion mass spectrometry profiling. In the absence of an encapsulant layer, redistribution and gettering of Cr has been detected within the implanted region after annealing at temperatures from 300 to 600° C. The observed gettering behavior can be correlated with the development of damage in the form of dislocation loops of 50 Å average image diameter. The motion of Cr into damage produces sharply defined zones of Cr depletion which appear stable at 600° C.
Show PACS
61.72.U- Doping and impurity implantation
61.72.Lk Linear defects: dislocations, disclinations
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Measurement of concentrator solar cell series resistance by flash testing

R. J. Chaffin and G. C. Osbourn

Appl. Phys. Lett. 37, 637 (1980); http://dx.doi.org/10.1063/1.92004 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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A simple technique for the measurement of series resistance of concentrator solar (photovoltaic) cells is described. This technique makes use of the fact that the ’’short circuit’’ current of a solar cell as a function of light intensity will begin to saturate at an intensity determined by the series resistance of the cell and circuit. In this region the series resistance of the cell can easily be found from a measurement which is relatively independent of illumination intensity and spectrum. Experimental data are presented that verify this result.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Thermal oxidation of hafnium silicide films on silicon

S. P. Murarka and C. C. Chang

Appl. Phys. Lett. 37, 639 (1980); http://dx.doi.org/10.1063/1.92005 (3 pages) | Cited 33 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
Hafnium silicide films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through boiling water in the temperature range 400–1000 °C. The progress of the oxidation was followed by measuring the conductivity of the specimen and by Auger analysis. Hafnium silicide films oxidized rapidly even at temperatures below 700 °C; for example, at 700 °C a∼1400‐Å silicide film was completely oxidized in 20 min. This oxidation behavior is distinctly different from that of most other silicides on silicon which tend to grow SiO2 instead of the oxidized silicide. The oxidized silicide film inhibited further oxidation of the silicon substrate in dry oxygen but not in steam.
Show PACS
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
72.80.Ga Transition-metal compounds

Ion‐beam‐induced epitaxy in the Pd/Si system

Hiroshi Ishiwara and Nobuyuki Kuzuta

Appl. Phys. Lett. 37, 641 (1980); http://dx.doi.org/10.1063/1.92006 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Epitaxial growth of Pd2Si has been observed at room temperature by implanting energetic Ar ions through a Pd film on a (111) Si substrate. It was found from ion channeling and backscattering measurements that the ion‐beam‐induced growth was initiated at the Pd‐Si interface and the thickness of the grown layer increased with ion dose even after the surface region of the Si substrate had been completely amorphized by Ar ion bombardment. A uniform epitaxial Pd2Si film 120 nm thick was obtained by implanting 200‐keV Ar ions to doses higher than 5×1016 cm−2, for which the channeling minimum yield of 1.5‐MeV He ions was about 0.1 of the random yield, and diffraction patterns in transmission electron microscopy showed strong single‐crystalline spots. Some additional experiments have also been performed to investigate the growth mechanism.
Show PACS
61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
64.75.-g Phase equilibria
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