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1 Oct 1980

Volume 37, Issue 7, pp. 583-668

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Silicon/metal silicide heterostructures grown by molecular beam epitaxy

J. C. Bean and J. M. Poate

Appl. Phys. Lett. 37, 643 (1980); http://dx.doi.org/10.1063/1.92007 (4 pages) | Cited 100 times

Online Publication Date: 23 July 2008

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Epitaxial NiSi2 and CoSi2 layers have been grown on crystalline silicon by molecular beam epitaxy (MBE). Stoichiometric, highly crystalline films can be grown by either silicon‐metal codeposition or by pure metal deposition on substrates heated to 550–800 °C. Crystalline quality is relatively insensitive to deposition conditions. Film smoothness is maximized by codeposition at temperatures near 600 °C. Both silicides have been epitaxially overgrown with silicon producing a fully crystalline silicon/metal silicide/silicon heterostructure.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge

B. Drevillon, J. Huc, A. Lloret, J. Perrin, G. de Rosny, and J. P. M. Schmitt

Appl. Phys. Lett. 37, 646 (1980); http://dx.doi.org/10.1063/1.92008 (3 pages) | Cited 44 times

Online Publication Date: 23 July 2008

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A silane plasma is generated by a hot cathode dc discharge in a partially confining multipolar magnetic structure yielding hydrogenated amorphous silicon thin films on the walls. The low‐pressure range (0.1–5 mTorr) allows the analysis of the elementary processes for SiH4 dissociation. At low silane partial pressure the deposition rate remains in the range of 1–10 Å/sec, but the contribution of ions to deposition can reach up to 80% in contrast with standard glow discharges.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)
52.70.Ds Electric and magnetic measurements
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Epitaxial alignment of polycrystalline Si films on (100) Si

B. Y. Tsaur and L. S. Hung

Appl. Phys. Lett. 37, 648 (1980); http://dx.doi.org/10.1063/1.92031 (4 pages) | Cited 35 times

Online Publication Date: 23 July 2008

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We demonstrate that fine‐grained polycrystalline Si films obtained by chemical vapor deposition can be aligned expitaxially with respect to the underlying (100) Si substrate upon furnace annealing at temperatures of 1000–1150 °C. The alignment proceeds basically by the formation of epitaxial columns which subsequently grow laterally to consume the remaining polycrystalline Si. The rates of alignment are measured to be 20–200 Å/min in the temperature interval of annealing with an activation energy of 4.7 eV. The epitaxial layers so obtained are of reasonably good crystal quality and contains only a small amount of planar crystallographic defects.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Hard axis anisotropy of Pr2Co17 detected by single‐point detection technique

F. Bolzoni, F. Leccabue, and L. Pareti

Appl. Phys. Lett. 37, 651 (1980); http://dx.doi.org/10.1063/1.92009 (2 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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We performed a computer experiment verifying the singular point detection theory in the case of a hard axis polycrystalline isotropic ferromagnet. We applied this theory to the easy plane sample Pr2Co17 and succeeded in measuring its anisotropy field. The measurements were carried out in the 115–297 K temperature range by means of a pulsed field apparatus.
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75.30.Gw Magnetic anisotropy
07.55.-w Magnetic instruments and components

Textured thin‐film Si solar selective absorbers using reactive ion etching

H. G. Craighead, R. E. Howard, and D. M. Tennant

Appl. Phys. Lett. 37, 653 (1980); http://dx.doi.org/10.1063/1.92015 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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Solar selective surface photothermal absorbers consisting of thin‐film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200 °C. These selective surfaces are stable in air to 500 °C.
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84.60.Jt Photoelectric conversion

Niobium nanobridge dc SQUID

Richard F. Voss, Robert B. Laibowitz, and Alec N. Broers

Appl. Phys. Lett. 37, 656 (1980); http://dx.doi.org/10.1063/1.92026 (3 pages) | Cited 17 times

Online Publication Date: 23 July 2008

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For the first time high‐resolution electron beam contamination lithography has been used to produce active sensing devices. dc SQUID’s (Superconducting quantum interference devices) with linewidths as small as 30 nm have demonstrated a minimum intrinsic energy resolution of 3h. This is the best value for any SQUID to date and approaches the limit ≈ h set by the uncertainty principle. The dependence of voltage noise on SQUID parameters is in agreement with a new small‐signal model of SQUID noise.
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85.25.-j Superconducting devices
41.75.Fr Electron and positron beams
07.68.+m Photography, photographic instruments; xerography

Synergism between strain and neutron irradiation in filamentary Nb3Sn conductors

C. L. Snead and M. Suenaga

Appl. Phys. Lett. 37, 659 (1980); http://dx.doi.org/10.1063/1.92027 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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The critical temperatures Tc of Nb3Sn and Nb3(SnGa) monofilamentary wires have been measured as a function of neutron fluence to 1.3×1019 n/cm2 (E≳1 MeV). The bronze overlayer was removed and Tc remeasured. The differences between the bronze‐on and ‐off conditions, a measure of the ’’prestrain effect’’ on the A15 layer, were seen to increase with increasing fluence. This enhancement of the prestrain effect is attributed to buckling of the Nb chains in the vicinity of Sn sites on the Nb chains (antisite disorder), the amount of buckling with the bronze on being greater because of the prestrain. The synergism between irradiation and prestrain is concluded to be a degrading factor in the operation of magnetically confined fusion reactor magnets unless the prestrain (compressive) is completely compensated by the externally applied (tensile) strains.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
61.80.Hg Neutron radiation effects

Performance of in situ superconductors in solenoids

J. E. Ostenson, D. K. Finnemore, J. D. Verhoeven, and E. D. Gibson

Appl. Phys. Lett. 37, 662 (1980); http://dx.doi.org/10.1063/1.92028 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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A series of small solenoids have been wound from in situ prepared Nb3‐Sn‐Cu superconducting wire in order to determine the suitability of these materials for magnets which require bending strains greater than 2% at the surface of the wire. In the range from 4 to 14 T, Jc of the solenoid is equivalent to or exceeds performance for unstrained material. For best performance in ac fields, it is essential to twist the wire and to support the windings with a potting material. Calorimetric measurements of the ac losses in the 8–12 T range give 1 mW/cm3 for magnetic fields ramped at 1 T/s.
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74.70.-b Superconducting materials other than cuprates
74.90.+n Other topics in superconductivity (restricted to new topics in section 74)
85.25.-j Superconducting devices

Magnetostriction and magnetization of iron‐based amorphous alloys

Shigeyasu Ito, Koichi Aso, Yoshimi Makino, and Satoru Uedaira

Appl. Phys. Lett. 37, 665 (1980); http://dx.doi.org/10.1063/1.92029 (2 pages) | Cited 24 times

Online Publication Date: 23 July 2008

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The magnetostriction constant and saturation magnetization at room temperature are measured for iron‐based amorphous alloys containing various kinds of metalloid and metal atoms, except Co and Ni. The data show that the magnetostriction constant is proportional to the square of the saturation magnetization for these alloys.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.30.Cr Saturation moments and magnetic susceptibilities

Further improvements in the efficiency of low‐energy positron moderators

Allen P. Mills

Appl. Phys. Lett. 37, 667 (1980); http://dx.doi.org/10.1063/1.92030 (2 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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Low‐energy positrons are emitted by negative‐positron‐affinity moderator surfaces irradiated by the β+ spectrum of a radioactive source. The slow‐positron conversion efficiency ϵ (flux of slow positrons/total β+ activity) of a Cu(111) single‐crystal moderator increases 30% when the positron affinity is made more negative by exposure of the Cu to H2S in situ. Upon cooling the moderator crystal to 100 K, ϵ increases an additional 50% to ϵ=(1.5±0.3)×10−3 using a low‐self‐absorption β+ source in a backscattering geometry.
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25.30.-c Lepton-induced reactions
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