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15 Oct 1980

Volume 37, Issue 8, pp. 673-759

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cw carbon monoxide laser with microwave excitation in the supersonic flow

P. Hoffmmann, H. Hügel, W. Schall, and W. Schock

Appl. Phys. Lett. 37, 673 (1980); http://dx.doi.org/10.1063/1.92046 (2 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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A new technique of efficiently coupling microwave energy into a supersonic gas flow is described. A stable self‐sustained 2.45‐GHz microwave discharge is applied to excite a cw CO gasdynamic laser. Electron densities well above the cutoff value have been achieved together with a reduced field strength within the discharge that is appropriate for efficient vibrational excitation. With an energy loading of 0.15 eV/molecule CO a laser power of 285 W was obtained in a small‐scale flow channel at an overall efficiency of 6%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Pi High-frequency and RF discharges

Electron quenching of KrF∗ and ArF∗

Daniel W. Trainor and J. H. Jacob

Appl. Phys. Lett. 37, 675 (1980); http://dx.doi.org/10.1063/1.92047 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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The collisional deactivation by electrons of the upper laser levels of KrF∗ and ArF∗ has been measured. The rare‐gas/fluorine binary mixtures were excited by a beam of fast electrons. These electron beam pulses were long enough to allow the use of a steady‐state analysis of the fluorescence. Quenching rate constants near 2×10−7 cm3/sec have been obtained.
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31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
82.20.Rp State to state energy transfer
52.20.Fs Electron collisions
34.80.Gs Molecular excitation and ionization

Multicolor fluorescent liquid‐crystal display concepts

S. Sato and M. M. Labes

Appl. Phys. Lett. 37, 677 (1980); http://dx.doi.org/10.1063/1.92048 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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A cholesteric liquid‐crystal electro‐optic cell is described which functions as both a UV shutter and as a tunable fluorescent emitter (’’shutter cell’’). By interfacing such a cell with an external passive fluorescent element, a two‐color display can be achieved. Contrast ratios of about 5 in the two‐color pairs blue‐green, blue‐red, and green‐red are achievable by electrically switching the shutter cell. Multicolor displays can be made by stacking shutter cells and passive elements.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
85.60.Pg Display systems

Fission‐fragment nuclear lasing of Ar(He)‐Xe

R. J. De Young, Y. J. Shiu, and M. D. Williams

Appl. Phys. Lett. 37, 679 (1980); http://dx.doi.org/10.1063/1.92049 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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Nuclear‐pumped lasing of Ar‐Xe and He‐Xe has been demonstrated using 235UF6 fission‐fragment excitation. Fission fragments were created by absorption of thermal neutrons in a combination of gaseous 235UF6 and laser‐tube wall coatings formed from UF6 chemical reaction products. At a pressure of 600 Torr Ar–(3%) Xe, lasing occurred at 2.65 μm in Xe. Up to 3 Torr of gaseous 235UF6 was added to 600 Torr Ar‐Xe before serious laser quenching occurred. With 3 Torr of 235UF6 added, 38% of the energy deposition came from gaseous UF6 and the remainder from the uranium wall coating. The neutron flux at lasing threshold was found to be 4×1015 n/cm2 sec.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
28.90.+i Other topics in nuclear engineering and nuclear power studies (restricted to new topics in section 28)

GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet

L. A. Coldren, K. Iga, B. I. Miller, and J. A. Rentschler

Appl. Phys. Lett. 37, 681 (1980); http://dx.doi.org/10.1063/1.92050 (3 pages) | Cited 42 times

Online Publication Date: 23 July 2008

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We report the first use of reactive‐ion etching (RIE) to form mirror facets on GaInAsP/Inp double‐heterostructure (DH) lasers (λ∼1.3 μm). The RIE, performed with a Cl2:O2 gas mixture, provides vertical etched walls with no undercutting. Initial laser results demonstrate that quasi‐single‐mode operation and reasonable threshold currents are possible.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
85.60.-q Optoelectronic devices

Reliable passive mode locking with slow Q switching

Mario Carlos Marconi, Oscar Eduardo Martinez, and Francisco Piero Diodati

Appl. Phys. Lett. 37, 684 (1980); http://dx.doi.org/10.1063/1.92025 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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An electro‐optic modulator (EOM) has been added to a passive mode‐locked Nd:glass laser in order to slow Q‐switch the cavity. This guarantees that the laser will work near threshold even if the gain of the laser medium or the losses change from shot to shot. The losses at the EOM are used as the output coupling. This new configuration allows more reliable operation of the system.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers

Gain and saturation intensity measurements of a mode‐locked KrF oscillator‐amplifier

J. Banic, T. Efthimiopoulos, and B. P. Stoicheff

Appl. Phys. Lett. 37, 686 (1980); http://dx.doi.org/10.1063/1.92039 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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The gain and saturation intensity of a fast‐discharge KrF oscillator‐amplifier have been investigated. The small‐signal‐gain coefficient was found to be 0.145 cm−1 for a 2‐ns pulse and 0.160 cm−1 for a 10‐ns pulse, with the respective saturation intensities ∼1.6 and ∼2.0 MW/cm2. An energy of 250 mJ was extracted with a 10‐ns input pulse. It was possible to isolate by amplification a single 2‐ns pulse from a mode‐locked train (of 2 or 3 pulses) and to extract 35 mJ in the amplified beam.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

A lossless, passive isolator for optically pumped far‐infrared lasers

D. K. Mansfield, A. Semet, and L. C. Johnson

Appl. Phys. Lett. 37, 688 (1980); http://dx.doi.org/10.1063/1.92040 (3 pages) | Cited 17 times

Online Publication Date: 23 July 2008

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A lossless, passive technique which isolates the pump and the far‐infrared cavities in an optically pumped far‐infrared laser system has been applied successfully. The isolator consists of a polarizer and a quarter‐wave plate. Pumping is accomplished with a circularly polarized beam, and the resulting circular polarization of the far‐infrared output stability without sacrifice of either power or mode quality.
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42.60.By Design of specific laser systems
42.62.-b Laser applications
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Lasing characteristics of iodine monofluoride

R. J. De Young

Appl. Phys. Lett. 37, 690 (1980); http://dx.doi.org/10.1063/1.92041 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Lasing has been observed at 491 and 484 nm from iodine monofluoride in mixtures of He/CF3I/NF3. The emission and lasing spectrum were investigated as well as conditions for optimum lasing. Optimum lasing at E/N of 1.8×10−16 occurred at 1277/0.65/2 Torr with an output reflector of 32% transmission. A media gain of ∼ 2% per cm was measured at optimum lasing conditions. Passivation with CF3I was found to be important for longer‐lifetime operation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Optically pumped Iodine monofluoride B3Π(O+)→X1Σ+ laser

S. J. Davis and L. Hanko

Appl. Phys. Lett. 37, 692 (1980); http://dx.doi.org/10.1063/1.92042 (3 pages) | Cited 28 times

Online Publication Date: 23 July 2008

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An optically pumped iodine monofluoride laser operating on the B3Π(O+)→X2Σ+ system has been demonstrated. Ground‐state IF was produced by the reaction of I2+F2 and subsequently excited with a high‐energy, broadband dye laser. Lasing was observed on the (2,10), (3,11), (4,9), and (4,10) transitions covering the wavelength range 7200–6500 Å.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Nuclear‐induced XeBr∗ photolytic laser model

J. W. Wilson

Appl. Phys. Lett. 37, 695 (1980); http://dx.doi.org/10.1063/1.92043 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Parameters for a photolytically pumped alkyl lasant iodide gas by the nuclear‐induced XeBr∗ excimer fluorescence are calculated according to a detailed kinetic model. High gain on the atomic iodine 2P1/2 state is estimated and 100‐mJ pulses with an average power output on the order of 1 kW appear possible.
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42.60.By Design of specific laser systems
28.90.+i Other topics in nuclear engineering and nuclear power studies (restricted to new topics in section 28)
82.50.Hp Processes caused by visible and UV light

Scanning‐electron‐microscope observations of propagating acoustic waves in surface acoustic wave devices

G. Eberharter and H.P. Feuerbaum

Appl. Phys. Lett. 37, 698 (1980); http://dx.doi.org/10.1063/1.92044 (2 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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We report for the first time the observation of propagating acoustic waves from constant‐overlap and apodized interdigital transducers on y‐cut LiNbO3, obtained by a scanning electron microscope using the stroboscopic voltage contrast. It is the most convenient and fastest method known today of observing directly on screen the complex radiation patterns of interdigital transducers on piezoelectric substrates.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
62.30.+d Mechanical and elastic waves; vibrations
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Zinc‐oxide–on–silicon surface acoustic wave resonators

S. J. Martin, R. L. Gunshor, and R. F. Pierret

Appl. Phys. Lett. 37, 700 (1980); http://dx.doi.org/10.1063/1.92045 (2 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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The first surface acoustic wave resonators fabricated using a ZnO‐on‐Si layered structure are described and characterized. The optimum location of the transducers in the resonant cavity and the general performance are first cited for devices containing isoloated aluminum, isolated Cr/Au, and shorted Cr/Au reflector strips. The transmission characteristics and reflecting properties of the shorted Cr/Au configuration are then examined in more detail. An unloaded Q of 3100 has been obtained with the shorted Cr/Au configuration at a resonant frequency of 105.4 MHz.
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43.35.Pt Surface waves in solids and liquids
85.40.Bh Computer-aided design of microcircuits; layout and modeling
77.65.-j Piezoelectricity and electromechanical effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

〈 ρR〉 measurements in ion fusion targets with a fast‐proton beam probe

T. R. Fisher and J. D. Perez

Appl. Phys. Lett. 37, 702 (1980); http://dx.doi.org/10.1063/1.92051 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A technique for measurement of 〈 ρR〉 in ion fusion targets is proposed which determines the contribution of both pusher and fuel independently by measuring both the energy loss and angular spread of a fast‐proton beam after passage through the target. Some model calculations are presented which illustrate the potential accuracy of this technique.
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52.70.Nc Particle measurements
52.40.Mj Particle beam interactions in plasmas
28.52.-s Fusion reactors

Light‐induced radiative recombination centers in hydrogenated amorphous silicon

J. I. Pankove and J. E. Berkeyheiser

Appl. Phys. Lett. 37, 705 (1980); http://dx.doi.org/10.1063/1.92052 (2 pages) | Cited 93 times

Online Publication Date: 23 July 2008

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Laser irradiation of hydrogenated amorphous silicon produces recombination centers which shorten the lifetime of carriers. Some of the light‐induced centers are radiative. The generation of the new radiative recombination centers increases with increasing temperature. All the light‐induced centers disappear upon thermal anneal at about 210 °C.
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82.50.Hp Processes caused by visible and UV light
78.40.Fy Semiconductors
79.20.Ds Laser-beam impact phenomena

Thermally stimulated depolarization of polyethylene between 5 and 190 K

D. Ronarc’h

Appl. Phys. Lett. 37, 707 (1980); http://dx.doi.org/10.1063/1.92053 (2 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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The thermally stimulated depolarization spectrum of low‐density polyethylene has been recorded in the temperature range 5–190 K. The γ relaxation of this polymer appeared to be composed of two principal processes. Using the thermal sampling technique, it was shown that the relaxation times in these processes were distributed in activation energy.
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61.41.+e Polymers, elastomers, and plastics

Reversible phase transformation in the Pd2Si‐PdSi thin‐film system

B. Y. Tsaur and M‐A. Nicolet

Appl. Phys. Lett. 37, 708 (1980); http://dx.doi.org/10.1063/1.92054 (4 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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The thermal stability of thin PdSi films has been studied at temperatures ranging between 300 and 700 °C. The PdSi, when in contact with crystalline Si, transforms into Pd2Si and Si at temperatures of 500–700 °C, a process contrary to the equilibrium‐phase diagram. The rate of transformation was found to depend on the structure and orientation of the Si. Upon heating above 750 °C, Pd2Si transforms back to PdSi. However, PdSi is stable against annealing when in contact with Pd2Si or an inert substrate SiO2. We propose that the decomposition of PdSi into Pd2Si and Si in the presence of crystalline Si is due to a lower interface energy of the Pd2Si‐Si interface compared to that of the PdSi‐Si interface.
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64.70.K- Solid-solid transitions
68.35.Md Surface thermodynamics, surface energies
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Steam thermal SiO2: Preparation and Raman characterization of free‐standing films

J. C. Mikkelsen and F. L. Galeener

Appl. Phys. Lett. 37, 712 (1980); http://dx.doi.org/10.1063/1.92024 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Free‐standing thick films of thermally grown SiO2 have been prepared by pressure steam oxidation of Si at 650–1000 °C. Characterization of these films by Raman spectroscopy reveals no important structural differences from appropriately annealed bulk fused silica, except for the different water content, which is readily determined. We show that no features of the Raman spectra can be associated with growth‐induced structural anisotropy or the structures that give rise to such metal‐oxide‐semiconductor defects as Qss.
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81.20.-n Methods of materials synthesis and materials processing
81.05.Kf Glasses (including metallic glasses)
63.50.-x Vibrational states in disordered systems
78.30.-j Infrared and Raman spectra

Work function of In2O3 film as determined from internal photoemission

C. A. Pan and T. P. Ma

Appl. Phys. Lett. 37, 714 (1980); http://dx.doi.org/10.1063/1.92055 (3 pages) | Cited 17 times

Online Publication Date: 23 July 2008

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The interface barrier heights of an In2O3‐SiO2‐Si structure have been studied in an internal pjotoemission experiment. A barrier height of 4.05 eV has been found for the In2O3(thermally evaporated)‐SiO2 inrerface, Using the published electron affinity of SiO2, 0.95 eV, the work function of the thermally evaporated In2O3 film is determined to be 5.0 eV. This result is in excellent agreement with the value deduced from the C‐V measurements performed on In2O3‐Sio2‐Si and Al‐SiO2‐Si metal‐oxide‐semiconductor (MOS) capacitors fabricated on the same wafer.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ty Semiconductor-insulator-semiconductor structures
85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A scanning electron microscope study of columnar topography and liquid‐crystal alignment on obliquely deposited oxide surfaces at low rates

Julian Cheng, G. D. Boyd, and F. G. Storz

Appl. Phys. Lett. 37, 716 (1980); http://dx.doi.org/10.1063/1.92056 (4 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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We present direct evidence of a columnar topography in obliquely deposited oxide films prepared by thermal and electron beam deposition at low rates. Column size, chaining, and inclination will be described and the correlations with liquid‐crystal surface tilt alignment discussed.
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61.30.Cz Molecular and microscopic models and theories of liquid crystal structure
68.55.-a Thin film structure and morphology
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

Solute trapping by moving interface in ion‐implanted silicon

S. U. Campisano, G. Foti, P. Baeri, M. G. Grimaldi, and E. Rimini

Appl. Phys. Lett. 37, 719 (1980); http://dx.doi.org/10.1063/1.92057 (4 pages) | Cited 31 times

Online Publication Date: 23 July 2008

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Experiments are reported for Te and Ag implantation in silicon, as examples of slow and fast diffusers, after furnace or laser annealing. Slow diffusers are substitutionally located at concentrations in great excess of the maximum solid solubility after both processes. Fast diffusers inhibit the solid‐phase epitaxial regrowth or are rejected at the sample surface after laser irradiation. Although the epitaxial growth occurs with velocities which differ up to ten orders of magnitude after furnace or laser annealing, the supersaturation is interpreted as due to the same basic mechanism: solute trapping at the moving interface when the residence time is larger than the one monolayer regrowth time. This process is controlled by the diffusion coefficient in the two adjacent phases.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation

Photoluminescence of lattice‐matched In1−xGaxP1−yAsy layers on GaAs

H. Kyuragi, A. Suzuki, S. Matsumura, and H. Matsunami

Appl. Phys. Lett. 37, 723 (1980); http://dx.doi.org/10.1063/1.92058 (2 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Photoluminescence of undoped n‐type and Zn‐doped p‐type lattice‐matched liquid‐phase epitaxy (LPE) In1−xGaxP1−yAsy layers on (100) GaAs has been studied at 4.2–290 K. Temperature dependences of the peak photon energy and the half‐width of the band‐to‐band transitions of the undoped layer were measured. The half‐width agreed well with the theoretical value of 1.8 kT. The band gap determined from the peak photon energy varied as 1.987−(7.284×10−4 T2)/(T+344) eV. Photoluminescence of the p‐type layer showed the band‐edge peak and another emission peak due to the recombination through Zn acceptors at 37–63 meV lower photon energy.
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78.40.Fy Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Glow discharge preparation of amorphous hydrogenated silicon from higher silanes

B. A. Scott, M. H. Brodsky, D. C. Green, P. B. Kirby, R. M. Plecenik, and E. E. Simonyi

Appl. Phys. Lett. 37, 725 (1980); http://dx.doi.org/10.1063/1.92059 (3 pages) | Cited 53 times

Online Publication Date: 23 July 2008

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Amorphous hydrogenated silicon has been deposited by plasma decomposition of Si2H6 and Si3H8. A major feature of the process is a deposition rate enhancement of over a factor of 20 compared to monosilane. The resulting films are compositionally similar to monosilane‐produced intrinsic a‐Si(H), but films deposited at 300 °C substrate temperature show greater photoconductivity. On the basis of our deposition experiments and the known thermolysis chemistry of the silanes, a conjectural model for the deposition process is presented.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
52.80.Hc Glow; corona

Deep‐level traps in low‐dose boron‐implanted and low‐temperature annealed silicon

A. Mitić, T. Sato, H. Nishi, and H. Hashimoto

Appl. Phys. Lett. 37, 727 (1980); http://dx.doi.org/10.1063/1.92060 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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The electronic defect levels in low‐dose (1–8×1012 cm−2) B‐implanted Si after annealing at 550 °C are measured by the deep level transient spectroscopy method. The defects, which distribute in accordance with the B profile, are assigned to interstitial‐ and vacancy‐boron complexes; Ev +0.27 and Ev +0.43 eV, and Ev +0.47 eV, respectively. In contrast with these defects, a uniform distribution in the implanted layer is observed for Ev +0.56 eV, which is assigned to a divacancy and/or vacancy cluster. Other defects of which the energy levels are very close to those of interstitial‐ and vacancy‐oxygen complexes are also observed.
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61.72.U- Doping and impurity implantation
61.72.jd Vacancies
61.72.jj Interstitials
61.72.J- Point defects and defect clusters
78.40.Fy Semiconductors

Zn‐diffused back‐illuminated p‐i‐n photodiodes in InGaAs/InP grown by molecular‐beam epitaxy

T. P. Lee, C. A. Burrus, A. Y. Cho, K. Y. Cheng, and D. D. Manchon

Appl. Phys. Lett. 37, 730 (1980); http://dx.doi.org/10.1063/1.92061 (2 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Epitaxial films of In0.53Ga0.47As lattice‐matched to InP substrates have been grown by molecular beam epitaxy (MBE). The carrier concentrations were as low as 3×1015 cm−3. High‐speed back‐illuminated PIN photodiodes for use at 0.95–1.6 μm wavelength were made from the resulting layers.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors
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