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1 Nov 1980

Volume 37, Issue 9, pp. 765-848

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Interaction of far‐infrared and mid‐infrared laser transitions in the NH3 laser

L. Y. Nelson, M. I. Buchwald, and C. R. Jones

Appl. Phys. Lett. 37, 765 (1980); http://dx.doi.org/10.1063/1.92080 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Laser emission on the conventional 12.8‐μm NH3 laser transition, optically pumped by the CO2 9R16 line, can be completely quenched and replaced by emission at 12.2μm. Cascading far‐infrared laser transitions in the excited ammonia ν2 state are shown to be responsible for the shift in wavelength.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.-b Photon interactions with molecules

X‐ray‐absorption fine‐structure measurement using a laser‐compressed target as a source

B. Yaakobi, H. Deckman, P. Bourke, S. Letzring, and J. M. Soures

Appl. Phys. Lett. 37, 767 (1980); http://dx.doi.org/10.1063/1.92081 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Laser‐compressed targets are shown to be a powerful source of x‐ray continuum suitable for (dynamic) absorption fine‐structure studies. A 50‐psec six‐beam laser pulse of peak power 2 TW produced a continuum x‐ray fluence of 2.5×1015 photons/keV at 2.6 keV (of duration∼100 psec). We used this source to record the sulfur K‐edge absorption fine structure in diffraction from a gypsum crystal.
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78.70.Dm X-ray absorption spectra
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Self‐sustained pulsations and negative‐resistance behavior in InGaAsP (λ=1.3 μm) double‐heterostructure lasers

R. J. Nelson and N. K. Dutta

Appl. Phys. Lett. 37, 769 (1980); http://dx.doi.org/10.1063/1.92082 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Self‐sustained pulsations, superlinear emission, and negative‐resistance behavior are reported for InGaAsP (λ=1.3 μm) double‐heterostructure lasers. For nitride‐stripe devices the incidence rate for pulsations is approximately 40%. Nearly 50% of these pulsating devices exhibit a light output with a large differential quantum efficiency over a small current range. These light jumps are associated with a negative‐resistance behavior, as observed in the electrical derivative I dV/dI, and with pulsations. Studies of buried‐waveguide devices show a much lower incidence rate of pulsations in these refractive‐index‐guided structures. Superlinear emission and negative‐resistance behavior have not been observed in these buried‐waveguide lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.45.+h Stimulated emission

CO2 laser excited by preionized transverse discharge through a dielectric

D. B. Cohn

Appl. Phys. Lett. 37, 771 (1980); http://dx.doi.org/10.1063/1.92083 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The effect of preionization on a dielectric‐electrode discharge in CO2 laser media is described. Compared to previous devices without preionization, specific energy extraction has been increased approximately threefold to 6 J/1 atm and gas pressures for stable operation are increased from below 1 atm to above 2 atm. With preionization, pulse‐to‐pulse repeatability for a 0.5‐Hz repetition rate under static gas conditions is greatly enhanced compared to operation without preionization in the present device. These results compare favorably with those obtained in conventional metallic‐electrode discharge transverse electric atmospheric (TEA) lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Pi High-frequency and RF discharges

Laser light absorption in long‐pulse high‐irradiance experiments

B. Arad, S. Eliezer, Y. Gazit, S. Jackel, Y. Karmi, H. M. Loebenstein, and A. Zigler

Appl. Phys. Lett. 37, 774 (1980); http://dx.doi.org/10.1063/1.92084 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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The fractional absorption of 1.06‐μm‐wavelength, 3‐nsec‐duration laser pulses in gold and aluminum targets was measured over the intensity range 1013–1016 W/cm2. Absorption was found to be z dependent with the stimulated scatter being independent of z. Absorption at the higher intensities was found to be limited by increased stimulated scatter rather than by decreased efficiency of the absorption mechanisms.
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42.62.-b Laser applications
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Optical study of isotopic effects in the sulfur deep level in silicon

Richard A. Forman

Appl. Phys. Lett. 37, 776 (1980); http://dx.doi.org/10.1063/1.92085 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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The optical absorption spectrum of silicon diffusion doped with sulfur has been studied in the region near 2 μm. Samples containing either 32s or 34s were examined to attempt to detect an isotopic shift of the energy level of the deepest sulfur center. Only a very small shift of 0.14 meV was observed; this is two orders of magnitude smaller than that found for the center studied by deep‐level spectroscopy. Analysis of the literature indicates that both measurements are in fact on the same center. The optical spectrum is interpreted as superimposed spectra of a group of slightly differing sulfur centers. If these perturbed centers were formed in different concentrations in different samples, an apparent isotope shift could easily be inferred in the deep‐level measurement. The interpretation of multiple centers for the sulfur deepest donor is analogous to the well‐known X levels found for several acceptors in silicon. These results may have general applicability toward an understanding of reported differences between various experiments on other deep‐level systems.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
78.30.Hv Other nonmetallic inorganics

Surface flaw detection in structural ceramics by scanning photoacoustic spectroscopy

P. K. Khandelwal, P. W. Heitman, A. J. Silversmith, and T. D. Wakefield

Appl. Phys. Lett. 37, 779 (1980); http://dx.doi.org/10.1063/1.92071 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Laser‐scanned photoacoustic spectroscopy has been used to detect tightly closed surface flaws in three types of silicon‐base structural ceramic materials. The amplitude of the photoacoustic signal was found to be greater for silicon nitride materials. The repeatability of detecting and locating flaws was excellent both in terms of the amplitude of the photoacoustic signal and signal‐to‐noise ratio.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.70.-q Methods of materials testing and analysis

Relative responses of CsI and Au photocathodes to 70‐psec, 500‐eV x‐ray pulses

G. L. Stradling, H. Medecki, R. L. Kauffman, D. T. Attwood, and B. L. Henke

Appl. Phys. Lett. 37, 782 (1980); http://dx.doi.org/10.1063/1.92072 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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We present results of a laser Doppler‐shift technique which gives the velocity profiles of ablatively accelerated targets. Measurements of the effects of laser beam nonuniformity on the target acceleration are presented and interpreted in the context of laser pellet fusion.
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07.85.-m X- and γ-ray instruments
84.47.+w Vacuum tubes
79.20.Hx Electron impact: secondary emission
52.70.-m Plasma diagnostic techniques and instrumentation

Verification of elastic‐wave static displacement in solids

John H. Cantrell and William P. Winfree

Appl. Phys. Lett. 37, 785 (1980); http://dx.doi.org/10.1063/1.92073 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The solution of the nonlinear differential equation which describes an initially sinusoidal finite‐amplitude elastic wave propagating in a solid contains a static‐displacement term in addition to the harmonic terms. The static‐displacement amplitude is theoretically predicted to be proportional to the product of the squares of the driving‐wave amplitude and the driving‐wave frequency. We report the first experimental verification of the elastic‐wave static displacement in a solid ([111] direction of single‐crystal germanium) and find agreement with the theoretical predictions.
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43.25.Cb Macrosonic propagation, finite amplitude sound; shock waves
43.35.Ty Other physical effects of sound
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity

Novel effects of magnetic field on the silane glow discharge

M. Taniguchi, M. Hirose, T. Hamasaki, and Y. Osaka

Appl. Phys. Lett. 37, 787 (1980); http://dx.doi.org/10.1063/1.92074 (2 pages) | Cited 29 times

Online Publication Date: 23 July 2008

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We have measured the optical‐emission spectra of the silane plasma as a function of the external magnetic field, together with the growth rate and vibrational spectra of the resulting a‐Si:H films. The optical‐emission intensities of the reactive species SiH, H2, and H produced in the plasma are appreciably affected by the magnetic field, and the corresponding change in the hydrogen bonding of the deposited films is interpreted in terms of chemical reaction among the species.
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61.43.Fs Glasses
61.43.-j Disordered solids
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.70.-m Plasma diagnostic techniques and instrumentation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Mechanical properties of heat‐treated Czochralski‐grown silicon crystals

K. Yasutake, M. Umeno, and H. Kawabe

Appl. Phys. Lett. 37, 789 (1980); http://dx.doi.org/10.1063/1.92075 (3 pages) | Cited 17 times

Online Publication Date: 23 July 2008

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Compression tests were performed on heat‐treated silicon crystals. Yield stresses of crystals depended strongly on the size and density of precipitates induced by heat treatments. Transmission electron microscope observation revealed that SiO2 precipitates larger than a few thousand angstroms became the nucleation sites of glide dislocations, causing a decrease in the yield stress, and that microprecipitates of less than several hundred angstroms acted as obstacles to dislocation movement.
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62.20.F- Deformation and plasticity
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Lm Deformation, plasticity, and creep
81.30.Mh Solid-phase precipitation

Dielectric hysteresis and rotation of dipoles in polyvinylidene fluoride

Tetsuo Takahashi, Munehiro Date, and Eiichi Fukada

Appl. Phys. Lett. 37, 791 (1980); http://dx.doi.org/10.1063/1.92076 (3 pages) | Cited 30 times

Online Publication Date: 23 July 2008

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Hysteresis curves of the linear dielectric constant, the electric displacement, and the IR absorbance at 1273 cm−1 were observed at −5 °C for a stretched film of polyvinylidene fluoride. The hysteretic polarization was obtained by subtracting the linear electric displacement from the observed electric displacement. Correspondence between hysteretic polarization during the cyclic application of electric field suggests that both originate from rotation of CF2 dipoles in form‐I crystals.
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77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.41.+e Polymers, elastomers, and plastics

Ion channeling in GaAs: Si, S, Se, and Te

R. G. Wilson and V. R. Deline

Appl. Phys. Lett. 37, 793 (1980); http://dx.doi.org/10.1063/1.92077 (4 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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Atom depth distributions resulting from the implantation of 29Si, 32S, 32Se, and 130Te ions within ∼0.05° of the 〈110〉 and 〈100〉 directions of the GaAs crystal have been measured by secondary‐ion mass spectrometry. The two lower‐mass ions were implanted at 150 keV and the two higher‐mass ions at 300 keV; all were implanted to a fluence of 3.0×1013 cm−2. Well‐defined maximum ranges and most probable channeled ranges Rc are observed in the 〈110〉 channeled distributions. The values of R0.1Nmax at Rc, chosen as a measure of the maximum channeled range, are 2.60, 1.60, 3.56, and 4.68 um, respectively, for the four ions. Background‐subtracted detection sensitivities for these four atoms in GaAs of l013–3×1014 cm−3 provide up to five orders of magnitude of dynamic range below the maxima in the depth distributions (the peaks in the random components).
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation

Electron velocity in Si and GaAs at very high electric fields

P. M. Smith, M. Inoue, and Jeffrey Frey

Appl. Phys. Lett. 37, 797 (1980); http://dx.doi.org/10.1063/1.92078 (2 pages) | Cited 33 times

Online Publication Date: 23 July 2008

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A microwave time‐of‐flight technique was used to measure the drift velocity of electrons in thin Si and GaAs epitaxial layers at very high electric fields. The room‐temperature velocity‐field characteristic is reported for silicon at fields up to 130 kV/cm, and for GaAs at fields up to 215 kV/cm.
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72.20.Ht High-field and nonlinear effects
72.80.Cw Elemental semiconductors
72.80.Ey III-V and II-VI semiconductors

High ionic conductivity of Na‐βGa2O3 thin film.

Katsuki Miyauchi, Tetsuichi Kudo, and Tsuneo Suganuma

Appl. Phys. Lett. 37, 799 (1980); http://dx.doi.org/10.1063/1.92079 (2 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Sodium β‐gallate thin films are prepared by rf sputtering and subsequent heat treatment. These thin films exhibit ionic conductivity as high as 4.2×10−2 Ω, cm−1 at 3000C and 7.0×10−6 Ω cm−1 at room temperature. Their ionic conductivity above 2000 C is only one order of magnitude less than that of single crystals. The activation energy of ionic conduction is 0.23 eV, that is, almost the same as that of single crystals. This ionic conductivity is high enough to be applied to thin‐film devices of solid electrolytes.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
81.15.Cd Deposition by sputtering
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology

Resonant enhancement of impact in Ga1−xAlxSb

O. Hildebrand, W. Kuebart, and M. H. Pilkuhn

Appl. Phys. Lett. 37, 801 (1980); http://dx.doi.org/10.1063/1.92086 (3 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
Impact ionization coefficients α and β of Ga1−xAlxSb avalanche photodiodes were measured for 0⩽x<0.3. The hole ionization coefficient β shows a strong band‐structure effect: a resonant enhancement at x=0.065 (300 K) due to initiation of the ionization process by holes from the spin‐orbit splitoff valence band. β/α can exceed values of 20 when the spin‐orbit splitting Δ is equal to the band‐gap energy Eg (resonant condition). The hole ionization coefficient depends exponentially on the difference between energy and band‐gap energy Ei−Eg.
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72.20.Ht High-field and nonlinear effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Dw Photodiodes; phototransistors; photoresistors

A backside‐illuminated imaging AlGaAs/GaAs charge‐coupled device

Y. Z. Liu, I. Deyhimy, R. J. Anderson, R. A. Milano, Marshall J. Cohen, J. S. Harris, and L. R. Tomasetta

Appl. Phys. Lett. 37, 803 (1980); http://dx.doi.org/10.1063/1.92087 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A glass‐supported, backside‐illuminated AlGaAs/GaAs heterojunction charge‐coupled device (CCD) imager is reported. The CCD structure was grown by liquid phase epitaxy on a GaAs substrate. The top epi‐layer was bonded to glass and the GaAs substrate completely removed. A ten‐pixel three‐phase Schottky gate CCD was fabricated on the glass‐supported layer. The CCD was successfully operated as a line imager with the photosignal entering through the support glass.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High mobility of two‐dimensional electrons at the GaAs/n‐AlGaAs heterojunction interface

S. Hiyamizu, T. Mimura, T. Fujii, and K. Nanb

Appl. Phys. Lett. 37, 805 (1980); http://dx.doi.org/10.1063/1.92088 (3 pages) | Cited 25 times

Online Publication Date: 23 July 2008

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Mobility of the two‐dimensional electron gas as high as 61 500 cm2/V sec, with a carrier concentration of 5.7×1011 cm−2, was obtained at 66 K in a selectively doped GaAs/n‐AlGaAs heterojunction structure grown by molecular beam epitaxy. This mobility is a factor of 2–3 larger than any reported so far in similar structures.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Avalanche multiplication and noise characteristics of low‐dark‐current GaInAsP/InP avalanche photodetectors

V. Diadiuk, S. H. Groves, and C. E. Hurwitz

Appl. Phys. Lett. 37, 807 (1980); http://dx.doi.org/10.1063/1.92070 (4 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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High‐performance avalanche photodiodes responding out to 1.25 μm have been fabricated in inverted‐mesa n+‐InP/n‐GaInAsP/n‐InP/p+‐InP structures. Uniform avalanche gains of 700, dark current densities of 3×10−6 A/cm2 at M=10, and an excess‐noise factor of ∼3, also at M=10, have been measured. The low dark current results from the placement of the p‐n junction in the InP and from the use of a new passivation technique. Pulse‐response rise times, measured with an avalanche gain of 40 and limited by the rise time of the mode‐locked Nd:YAG laser pulse, were less than 160 psec.
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72.80.Jc Other crystalline inorganic semiconductors
72.70.+m Noise processes and phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

A channeling study of Sb trapping in Fe‐Ti‐C‐Sb alloys

J. A. Knapp and D. M. Follstaedt

Appl. Phys. Lett. 37, 810 (1980); http://dx.doi.org/10.1063/1.92089 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The trapping site for Sb in an Fe crystal containing TiC precipitates has been determined using channeling techniques in ion backscattering and ion‐induced characteristic x‐ray analyses of ion‐implanted alloys. From the orientation of the TiC particles relative to the Fe host lattice, we show that ≳60% of the trapped Sb atoms occupy Fe sites at the Fe‐TiC interface, rather than Ti sites within the TiC particles.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
61.66.Dk Alloys
66.30.J- Diffusion of impurities
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Plasma anodization of Hg1−xCdxTe

Y. Nemirovsky and R. Goshen

Appl. Phys. Lett. 37, 813 (1980); http://dx.doi.org/10.1063/1.92090 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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A new plasma oxidation process for forming oxide films on Hg1−xCdxTe is described. Electrical measurements on metal‐insulator‐semiconductor devices employing the native oxide are presented. The oxide films have a relatively low fixed surface charge density of (1–3)×1011 e cm−2 and in this respect are superior to oxides growth by chemical anodization. For insulators which are a combination of 300‐Å native oxide and 2000‐Å ZnS the measured flat‐band voltages are −0.5 and −2.5 V for n‐t and p‐type substrates, respectively. The measured work‐function difference is −1.7 V for indium gate structures and the relative dielectric constant of the oxide is 13. The capacitance‐voltage and current‐voltage characteristics indicate an interface well suited for devices such as photoconductors, photovoltaic diodes, and charge‐coupled devices.
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68.55.-a Thin film structure and morphology
52.40.Hf Plasma-material interactions; boundary layer effects
81.05.Bx Metals, semimetals, and alloys

A model for ion‐implantation‐induced improvements of photoferroelectric imaging in lead lanthanum zirconate titanate ceramics

P. S. Peercy and C. E. Land

Appl. Phys. Lett. 37, 815 (1980); http://dx.doi.org/10.1063/1.92091 (4 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Studies of photoferroelectric image storage in H‐, He‐, and, more recently, Ar‐implanted /(PLZT) lead lanthanum zirconate titanate reveal that the photosensitivity can be significantly increased by ion implantation into the image storage surface. For example, the photosensitivity after implantation with 5×1014 500‐keV Ar/cm2 is increased by about three orders of magnitude over that of unimplanted PLZT. The increase in photosensitivity results from a decrease in dark conductivity and changes in the photoconductivity of the implanted layer. We present a phenomenological model which describes the photosensitivity enhancement obtained by ion implantation. This model takes into account both light‐ and ion‐ implantation‐induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with near‐UV light intensity for ion‐implantated PLZT.
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77.80.-e Ferroelectricity and antiferroelectricity
61.72.U- Doping and impurity implantation
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
78.20.-e Optical properties of bulk materials and thin films

Determination of the three‐dimensional lattice mismatch in quaternary III‐V liquid phase epitaxial layers using simultaneous Bragg diffraction of x‐rays

Shih‐Lin Chang

Appl. Phys. Lett. 37, 819 (1980); http://dx.doi.org/10.1063/1.92092 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Because multiple simultaneous reflection of x rays is very sensitive to lattice deformation, the six‐beam, (000) (006) (224) (222) (224) (222) multiple reflection was used to record simultaneously the information about the lattice mismatch of [001] InGaAsP materials using a divergent x‐ray source. The lattice mismatches in directions parallel and perpendicular to [001], determined from a single divergent‐beam photograph, increase as the As concentration in liquid composition XlAs increases. The procedure was used without difficulty for XlGa as low as 0.0007 and XlAs in the range 0.006–0.01.
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68.55.-a Thin film structure and morphology
61.05.C- X-ray diffraction and scattering

High‐temperature scanning cw laser‐induced diffusion of arsenic and phosphorus in silicon

S. Matsumoto, J. F. Gibbons, V. Deline, and C. A. Evans

Appl. Phys. Lett. 37, 821 (1980); http://dx.doi.org/10.1063/1.92093 (4 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The diffusion of arsenic and phosphorus in silicon at temperatures near the melting point has been investigated by using a scanned cw laser. The intrinsic diffusion coefficients of arsenic and phosphorus obtained in this work agree well with the extrapolated values of intrinsic diffusion coefficients reported by others. Diffusion coefficients of arsenic under extrinsic conditions at temperatures over 1200 °C are found to depend linearly on the electron concentration. The validity of the analytical model for solid‐phase reaction expressed in terms of an effective temperature and an effective time for the laser heat source is shown.
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66.30.J- Diffusion of impurities

Oxidation mechanisms in TiSi2 films on single silicon substrates

Jiann‐Ruey Chen, Mau‐Phon Houng, Shen‐Kan Hsiung, and Yuen‐chung Liu

Appl. Phys. Lett. 37, 824 (1980); http://dx.doi.org/10.1063/1.92094 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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Ti is deposited on single silicon wafer and then forms TiSi2 by thermal annealing in vacuum. In the steam oxidation, TiSi2 first dissociates and forms a Ti compound and SiO2. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi2 to form SiO2, while the TiSi2 remains inert. A two‐step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.
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68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
81.05.Bx Metals, semimetals, and alloys
66.30.-h Diffusion in solids
82.20.Pm Rate constants, reaction cross sections, and activation energies
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