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1 Nov 1980

Volume 37, Issue 9, pp. 765-848

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Metal‐insulator‐semiconductor solar cells using amorphous Si:F:H alloys

A. Madan, J. McGill, W. Czubatyj, J. Yang, and S. R. Ovshinsky

Appl. Phys. Lett. 37, 826 (1980); http://dx.doi.org/10.1063/1.92095 (3 pages) | Cited 22 times

Online Publication Date: 23 July 2008

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Metal‐insulator‐semiconductor‐type photovoltaic devices using amorphous Si:F:H alloys have been fabricated. Conversion efficiencies of up to 6.3% under AM:1 illumination have been observed. These represent the highest efficiencies yet reported for amorphous thin‐film solar cells.
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84.60.Jt Photoelectric conversion

Near‐surface regrowth rate effects in high‐dose ion‐implanted (100) silicon

J. S. Williams and R. G. Elliman

Appl. Phys. Lett. 37, 829 (1980); http://dx.doi.org/10.1063/1.92096 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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High‐resolution Rutherford backscattering and channeling has been employed to investigate regrowth kinetics of amorphous layers in high‐dose As‐ and Pb‐implanted (100) silicon. Our results indicate that epitaxial regrowth rates are severely retarded by high concentrations of Pb and As in the silicon lattice and that polycrystalline growth may predominate under such conditions.
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61.72.U- Doping and impurity implantation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

The influence of Ti and Zr additions on GaAs liquid phase epitaxial growth

D. A. Stevenson, P. I. Ketrush, S. C. Chang, and A. Borshchevsky

Appl. Phys. Lett. 37, 832 (1980); http://dx.doi.org/10.1063/1.92097 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Small additions of Zr and Ti to liquid Ga in the liquid phase epitaxial growth of GaAs caused and increased tendency to grow p‐type layers and produced high p‐type mobilities (200–400 cm2/V sec). The difference in behavior of the two additions was related to the respective oxide stability. The temperature dependence and the high values of the hole mobility suggest that the additions remove donor impurities rather than compensate them.
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81.10.Fq Growth from melts; zone melting and refining

Interfacial layer formation in the sputter‐deposited SiO2/GaAs system

Toshitaka Torikai and Kenji Endo

Appl. Phys. Lett. 37, 835 (1980); http://dx.doi.org/10.1063/1.92065 (3 pages)

Online Publication Date: 23 July 2008

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The sputter‐deposited SiO2/GaAs interface has been studied by Auger sputter profiling. An interfacial layer is formed even at about 300 °C whenever SiO2 is deposited on the air‐cleaved GaAs surface. On the other hand, when GaAs is cleaved in the sputtering chamber just prior to SiO2 deposition, an interfacial layer is not formed even after annealing at 600 °C, and furthermore the interface is abrupt. Interfacial layer formation is attributed to the existance of thin natural oxide on the GaAs surface.
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68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.66.Bi Elemental solids
61.66.Dk Alloys
68.60.-p Physical properties of thin films, nonelectronic

Refractory‐superconductor S‐N‐S microbridges

R. B. van Dover, A. de Lozanne, R. E. Howard, W. L. McLean, and M. R. Beasley

Appl. Phys. Lett. 37, 838 (1980); http://dx.doi.org/10.1063/1.92066 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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We have successfully fabricated Nb‐Au‐Nb planar proximity‐effect microbridges and increased our understanding of their behavior through the use of simple models. The magnitude and temperature dependence of the critical current are explained in terms of soft boundary conditions by combining Ginzburg‐Landau analysis near Tc with the Likharev‐Usadel approach at low temperatures. The low‐voltage behavior near Tc is in good qualitative agreement with numerical calculations of the traditional TDGL model.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

High‐quality submicron niobium tunnel junctions with reactive‐ion‐beam oxidation

A. W. Kleinsasser and R. A. Buhrman

Appl. Phys. Lett. 37, 841 (1980); http://dx.doi.org/10.1063/1.92067 (3 pages) | Cited 29 times

Online Publication Date: 23 July 2008

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A new reactive‐ion‐beam oxidation technique has been applied to the fabrication of rugged, high‐quality niobium‐lead alloy Josephson tunnel junctions. Control of critical current density over a wide range is possible, and critical current densities exceeding 106 A/cm2 have been obtained. In addition, a process‐compatible edge geometry has been developed which allows a junction to be formed on the faceted edge of a niobium base electrode, yielding devices with areas of 10−9 cm2 using 1‐μm photolithography.
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74.50.+r Tunneling phenomena; Josephson effects
81.05.Bx Metals, semimetals, and alloys

Laser‐induced transient excitation of conducting targets

William H. Peake, John G. Meadors, and Michael A. Poirier

Appl. Phys. Lett. 37, 844 (1980); http://dx.doi.org/10.1063/1.92068 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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A fast‐rise time laser pulse of low energy is focused on the surface of a conducting object. The thermionic emission from the irradiated spot constitutes a transient current monopole normal to the conductor surface. This current source excites surface currents in the conducting object, which then radiates a pulse of electromagnetic energy.
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03.50.De Classical electromagnetism, Maxwell equations
79.40.+z Thermionic emission
73.40.Ei Rectification
79.20.Ds Laser-beam impact phenomena

UV laser‐induced deposition of metal films

R. D. Coombe and F. J. Wodarczyk

Appl. Phys. Lett. 37, 846 (1980); http://dx.doi.org/10.1063/1.92069 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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KrF and XeCl excimer lasers have been used to induce the localized deposition of films of zinc and magnesium on a variety of transparent and absorbing substrates. The metal atoms are derived from flows of the pure metals. The films, which have thicknesses up to several microns, are produced only in the area of the substrate irradiated by the laser. It is hypothesized that UV radiation activates the substrate surface for film nucleation by desorbing species (e.g., hydrocarbons) which inhibit adhesion.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
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