We report pulsed‐current thresholds for stripe‐geometry lasers fabricated from some ternary active layer molecular beam epitaxially grown wafers, which are nearly temperature independent over a ≊100 °C range. Lasers from one such wafer, pulse‐operated over the practically important temperature range about room temperature, exhibit only a 3‐mA threshold decrease in going from −10 to +20 °C and only a 3‐mA increase in going from 20 to 50 °C. Fitting the data over small temperature intervals using the commonly observed exponential function for the temperature dependence of threshold (I = I0 exp(T/T0)) results in negative, infinite, and large positive values (⩾300K) for T0, as the temperature is increased from −10 to 75 °C. Lasers with such a range of threshold insensitivity may reduce pattern‐dependent effects and may have significant practical implications for the simplification of the feedback circuitry used to maintain the pre‐bias operating current in laser transmitters. Data examined over the temperature interval −55 to 260 °C show that thresholds for the anomalous temperature insenstive devices are everywhere greater than or equal to the thresholds of comparable normal devices. Independent data tends to rule out a resistive shunt model as well as a mechanism based upon the inhomogeneous incorporation of aluminum and/or dopants in the active layer. Available evidence suggests that the explanation is related to changes occurring in a normally present nonradiative mechanism.