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1 Jan 1981

Volume 38, Issue 1, pp. 1-61


Electron energy distribution in photolytically pumped lasers

W. L. Morgan, R. D. Franklin, and R. A. Haas

Appl. Phys. Lett. 38, 1 (1981); http://dx.doi.org/10.1063/1.92122 (3 pages) | Cited 5 times

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Calculations of the electron energy distribution function in mixtures of Se(1S), CO, and Xe are presented. The Se(1S) arises from photolysis of OCSe by Xe2 vacuum ultraviolet excimer radiation, and the electrons are due to photoionization of the Se(1S). The calculations show that highly non‐Maxwellian electron energy distribution can result from electron heating by super‐elastic deexcitation of Se(1S) and cooling by inelastic excitation of CO vibrational levels and Xe electronic states. The kinetic rate constants computed using these distributions differ significantly from those derived from a Maxwellian distribution. It is found that the kinetic rate constants are sensitive to variations in the fractional ionization (α≳10−6), relative CO concentration (nco/nSe(1S)⩾1), CO vibrational temperature (Tv ≳1000 °K), and fractional Xe metastable density (n∗/n ≳ 10−5). Adding the molecular buffer, CO, cools electrons and slows multiplication.
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42.55.Ah General laser theory

Spatially resolved gain measurements in UV preionized homogenous discharge XeCl and KrF lasers

Shuntaro Watanabe, A. J. Alcock, K. E. Leopold, and R. S. Taylor

Appl. Phys. Lett. 38, 3 (1981); http://dx.doi.org/10.1063/1.92125 (4 pages) | Cited 28 times

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Spatially uniform avalanche discharges of relatively long duration have been obtained in a UV‐preionized, high‐pressure, rare‐gas–halide laser. In the case of XeCl pulse durations as long as 70 ns have been observed. The spatial distribution of the small‐signal gain in a plane transverse to the laser axis has been measured. The active discharge cross sections with better than 90% gain uniformity were 2.8×3.0 and 2.8×2.5 cm2 for XeCl and KrF, respectively. The use of neon rather than helium as a buffer gas increased the discharge cross section, and the laser pulse duration resulting in improved laser output energy densities of 4.5 J/l in XeCl and 2.8 J/l in KrF.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.-s Electric discharges

The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy

W. T. Tsang, W. R. Holbrook, and P. E. Fraley

Appl. Phys. Lett. 38, 6 (1981); http://dx.doi.org/10.1063/1.92133 (4 pages) | Cited 13 times

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We present the results of the cw electro‐optical characteristics of 5‐μm shallow proton‐bombarded strip laser fabricated from molecular beam epitaxy (MBE)‐grown double‐heterostructure (DH) wafers that have Al0.08Ga0.92As active layers at elevated temperatures (55–70 °C), and compare them with those obtained from similar lasers fabricated from liquid phase expitaxy (LPE)‐grown DH wafers. It is shown that the MBE lasers maintain their excellent cw device characteristics even at elevated temperatures. The temperature dependence of the cw Ith of MBE lasers is significantly less than that of the LPE lasers. Furthermore, the cw Ith’s of these MBE lasers are at least as good as good LPE lasers. Owing to the very uniform layer thicknesses generated by the MBE process, the resultant slice quality is highly uniform. This results in a significantly increased yield of good lasers per MBE wafer.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Multiphonon relaxation rates from delayed laser emission in Nd‐YAG crystals

J. M. Ramsey and W. B. Whitten

Appl. Phys. Lett. 38, 9 (1981); http://dx.doi.org/10.1063/1.92134 (3 pages) | Cited 4 times

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Delayed laser emission from a ND‐YAG oscillator pumped by a 532‐nm 50‐ns pulse is interpreted in terms of multiphonon relaxation from the pumped levels to the upper laser level. The relaxation rate constant, (1.6±0.2)×106 s−1, is in good agreement with previous results obtained from the fluorescence rise time.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.55.Ah General laser theory
85.60.Jb Light-emitting devices

Dielectric and hydrodynamic instabilities in certain classes of discotic mesophases

J. C. Dubois, M. Hareng, S. Le Berre, J. N. Perbet, and M. Torn

Appl. Phys. Lett. 38, 11 (1981); http://dx.doi.org/10.1063/1.92118 (3 pages) | Cited 9 times

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The aim of this letter is to give a short description of some electro‐optical effects which are observed in a DF phase of disklike molecules. We point out the existence of dielectric and electrohydrodynamic instabilities. The last one is the experimental evidence of the interesting situation of an anisotropic liquid with ϵa≳0σa<0 in the homeotropic configuration. These electro‐optic effects can be useful in display applications of the discotic phases.
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78.20.Jq Electro-optical effects
81.20.-n Methods of materials synthesis and materials processing

Raman spectra from heat‐treated semi‐insulating GaAs

Tomoji Nakamura, Akio Ushirokawa, and Takashi Katoda

Appl. Phys. Lett. 38, 13 (1981); http://dx.doi.org/10.1063/1.92119 (3 pages) | Cited 13 times

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Raman‐spectra measurements were made on semi‐insulating (SI) GaAs heat‐treated in an atmosphere of H2 or Ar to study the effect of structural changes or strains on a thermal conversion of Si GaAs. Correlations between Raman spectra and electrical changes of SI GaAs indicate that strains in the interface region between SI GaAs and a dielectric film is, at least, one of the origins of the thermal conversion, while the structural changes accompanying the generation of the TO‐phonon line has no effect on the thermal conversion.
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78.30.Hv Other nonmetallic inorganics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.40.Gh Other heat and thermomechanical treatments

Accelerated aging test of InGaAsP/InP double‐heterostructure laser diodes with single transverse mode

H. Imai, M. Morimoto, H. Ishikawa, K. Hori, M. Takusagawa, K. Wakita, M. Fukuda, and G. Iwane

Appl. Phys. Lett. 38, 16 (1981); http://dx.doi.org/10.1063/1.92120 (2 pages) | Cited 6 times

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Aging tests of InGaAsP/InP double‐heterostructure (DH) laser diodes with single transverse mode have been performed at 50 and 70 °C under constant optical power operation. The devices were self‐aligned‐structure DH laser diodes bonded with AuSn‐alloy solder. Samples for 3‐mW/facet operation at 50 °C are operating at over 5000 H, those for 5‐mW/facet operation at 50 °C are operating at over 4500 H, and those for 3‐mW/facet operation at 70 °C are operating at over 3500 H. Far‐field patterns parallel to the junction plane in these samples do not change in this aging. Averaged increasing rates of the driving current to maintain the specified optical power are 1.8×10−6/H for 3‐mW operation at 50 °C, 48×10−6/H for 5‐mW operation at 50 °C, and 1.3×10−5/H for 3‐mW operation at 70 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Suppression of optical beam filamentation in plasmas and saturable dielectrics

F. S. Felber

Appl. Phys. Lett. 38, 18 (1981); http://dx.doi.org/10.1063/1.92121 (3 pages) | Cited 2 times

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The first use of a variational approach to analyze the growth of a localized filament on an optical plane wave in a nonlinear medium shows that saturation of the nonlinearity of the medium by the wave can suppress filamentation of the wave. Applications may include lossless filters that remove hot spots from beams or convert multimode beams to single mode.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
42.79.Ci Filters, zone plates, and polarizers

Consequences of Pierce instability for focusing of neutralized ion beams

J. W. Poukey, J. P. Quintenz, and C. L. Olson

Appl. Phys. Lett. 38, 20 (1981); http://dx.doi.org/10.1063/1.92123 (3 pages) | Cited 13 times

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The effects of Pierce‐type space‐charge instabilities in high‐energy ion beams, initially neutralized by co‐moving electrons, are discussed in terms of planar and two‐dimensional spherical geometries. The limiting ion current which can reach a target is given.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.65.-y Plasma simulation

Backscattering method for the study of blistering with energy‐distributed He particles

Shuichi Okuda and Hideo Kuwahara

Appl. Phys. Lett. 38, 23 (1981); http://dx.doi.org/10.1063/1.92112 (2 pages) | Cited 2 times

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Helium particles backscattered from the surface of a Nb plate bombarded with 40‐keV He+ were used as incident particles for studying the effect of the distribution of incident energies on blistering. After the bombardment, blisters with irregular shapes and sizes were observed on the surface of polycrystalline Mo.
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52.40.Hf Plasma-material interactions; boundary layer effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects

Thermal stabilization of thin‐film GaAs solar cells with grain‐boundary–edge passivation

S. K. Ghandhi, S. K. Shastry, and J. M. Borrego

Appl. Phys. Lett. 38, 25 (1981); http://dx.doi.org/10.1063/1.92113 (3 pages)

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This letter describes the effect of isochronal anneals on polycrystalline gallium arsenide solar cells, whose grain‐boundary edges have been passivated by selective anodization. Both the deterioration of this anodic oxide with temperature, as well as treatments for its full recovery and stabilization, are outlined in this Letter. This treatment consists of a rinse in strong HCl, and is carried out on cells after they are completely fabricated. It is proposed that conversion of the arsenic oxide component to its more stable hydroxide or chloride takes place during this treatment.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Dw Photodiodes; phototransistors; photoresistors
81.20.-n Methods of materials synthesis and materials processing
74.10.+v Occurrence, potential candidates

Fast photoconductive detector using p‐In0.53Ga0.47As with response to 1.7 μm

J. Degani, R. F. Leheny, R. E. Nahory, M. A. Pollack, J. P. Heritage, and J. C. DeWinter

Appl. Phys. Lett. 38, 27 (1981); http://dx.doi.org/10.1063/1.92114 (3 pages) | Cited 15 times

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Photoconductive detectors, fabricated from p‐type In0.53Ga0.47As using strip‐line techniques, exhibit rise and fall times of 45 and 70 psec FWHM. This performance is consistent with a peak electron drift velocity of 2.1×107 cm/sec at a field of ∼3.5 kV/cm and represents the fastest reported detector response for the 1.0–1.7‐μm wavelength range.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Semimetallic InAs‐GaSb superlattices to the heterojunction limit

L. L. Chang, N. J. Kawai, E. E. Mendez, C.‐A. Chang, and L. Esaki

Appl. Phys. Lett. 38, 30 (1981); http://dx.doi.org/10.1063/1.92115 (3 pages) | Cited 18 times

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Superlattices of InAs‐GaSb have been investigated with layer thicknesses ranging from the onset of the semiconductor‐semimetal transition (<100 Å) to the heterojunction limit (≳1000 Å). Pronounced Shubnikov–de Haas osicillations have been observed throughout the entire semimetallic regime which are shown to be associated with the ground‐electron sub‐bands, yielding energies of the Fermi level in agreement with those calculated from electron transfers.
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71.30.+h Metal-insulator transitions and other electronic transitions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects

Enhanced plasma oxidation at low temperature using a thin solid electrolyte film

S. Gourrier, P. Dimitriou, J. B. Theeten, J. Perrière, J. Siejka, and M. Croset

Appl. Phys. Lett. 38, 33 (1981); http://dx.doi.org/10.1063/1.92116 (3 pages) | Cited 13 times

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Low‐temperature anodic oxidation in a ’’cold’’ plasma (multipole) of metals like Al or Ta through a thin calcia‐stabilized zirconia (CSZ) film is possible. Thick (≳300 nm) stoichiometric metal oxides are formed under the CSZ with high growth rates (20–30 nm/min). Anodization of bare metals under similar plasma conditions leads to very low oxidation rates (<1 nm/min). The CSZ film, which acts as a selective oxygen filter, has thus greatly enchanced the oxidation rate. Low‐temperature (<50 °C) plasma anodization of silicon (typical rates 2–3 nm/min) is also possible through a thin CSZ film.
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81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes

Measurements of hot‐electron conduction and real‐space transfer in GaAs‐AlxGa1−xAs heterojunction layers

M. Keever, H. Shichijo, K. Hess, S. Banerjee, L. Witkowski, H. Morkoç, and B. G. Streetman

Appl. Phys. Lett. 38, 36 (1981); http://dx.doi.org/10.1063/1.92117 (3 pages) | Cited 32 times

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Measurements of the current‐voltage characteristics of GaAs‐AlxGa1−xAs heterojunction layers are reported. The experimental results are consistent with the idea of real‐space transfer of the electrons out of the GaAs into the AlxGa1−xAs under hot‐electron conditions. Current saturation and negative differential resistance are observed as predicted by Monte Carlo simulations.
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72.20.Ht High-field and nonlinear effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Polycrystalline Zn3P2 Schottky barrier solar cells

M. Bhushan and A. Catalano

Appl. Phys. Lett. 38, 39 (1981); http://dx.doi.org/10.1063/1.92124 (3 pages) | Cited 44 times

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Energy conversion efficiencies as high as 5.96% are reported on polycrystalline transparent magnesium Zn3P2 diodes, 0.7 cm2 in area, tested under simulated AM1 illumination. The transparent Mg films with low sheet resistivities are obtained by dc sputtering. The effective minority‐carrier diffusion length in Zn3P2 is estimated from spectral response measurements and correlates well with the measured short‐circuit current. Loss analysis of the present cells shows a practical upper limit of 9% in conversion efficiency.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Optically induced bistable states in metal/tunnel‐oxide/semiconductor (MTOS) junctions

S. K. Lai, P. V. Dressendorfer, T. P. Ma, and R. C. Barker

Appl. Phys. Lett. 38, 41 (1981); http://dx.doi.org/10.1063/1.92126 (4 pages) | Cited 10 times

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A new switching phenomenon in metal‐oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 μW/cm2 causes the reverse‐biased junction to switch from a low‐current to a high‐current state. It is believed that hot‐electron‐induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high current‐state after the optical exciation is removed. The junction may be switched back to the low‐current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.
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85.30.Tv Field effect devices

Four‐wave polarization spectroscopy of small‐gap semiconductors: Application to free carrier concentration measurements in gallium arsenide using a tunable infrared source

Ph. Kupecek, M. Comte, and D. S. Chemla

Appl. Phys. Lett. 38, 44 (1981); http://dx.doi.org/10.1063/1.92127 (4 pages)

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We present a generalization of the polarization coherent anti‐Stokes Raman spectroscopy to zinc‐blende structure semiconductors. Competitive third‐order processes have been put in evidence by studying the resonant signal around the LO phonon at 292 cm−1 in GaAs. Our analysis enables us to compare directly Raman and free‐carrier contributions whose concentration can be thus measured by a purely optical method.
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42.65.-k Nonlinear optics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
72.80.Ey III-V and II-VI semiconductors

Picosecond photoconductivity in radiation‐damaged silicon‐on‐sapphire films

P. R. Smith, D. H. Auston, A. M. Johnson, and W. M. Augustyniak

Appl. Phys. Lett. 38, 47 (1981); http://dx.doi.org/10.1063/1.92128 (4 pages) | Cited 66 times

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Radiation damage caused by ion implantation is used to control the carrier lifetime in silicon‐on‐sapphire (SOS) films. Photoconductivity measurements show the relaxation time changes by several orders of magnitude and can be as short as 8 ps. The carrier mobility is found to be at least an order of magnitude higher than amorphous silicon materials with similar relaxation times. A photodetector is described that demonstrates the high‐speed capability of these high‐defect‐density films.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
61.72.U- Doping and impurity implantation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Characteristics of the metal insulator semiconductor structure:AlN/Si

M. Morita, S. Isogai, K. Tsubouchi, and N. Mikoshiba

Appl. Phys. Lett. 38, 50 (1981); http://dx.doi.org/10.1063/1.92129 (3 pages) | Cited 11 times

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Single‐crystal AlN layers have been grown on Si substrates at ∼1200 °C using metalorganic chemical vapor deposition. The metal/AlN/Si MIS structures have been investigated by the MIS conductance method. It was found that the interface‐state density Nss and electron capture cross section σn in the depletion region are of the order of 1011 eV−1 cm−2 and 10−17 cm, respectively.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

The mechanism of Schottky‐barrier formation in polyacetylene

J. R. Waldrop, Marshall J. Cohen, A. J. Heeger, and A. G. MacDiarmid

Appl. Phys. Lett. 38, 53 (1981); http://dx.doi.org/10.1063/1.92130 (3 pages) | Cited 18 times

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An investigation of metal‐polyacetylene contacts by using x‐ray photoemission spectroscopy is reported. For undoped p‐type polyacetylene, Mg metal formed a rectifying contact with a Schottky‐barrier height of ≳0.6 eV; Au metal formed a pure ohmic contact. Changes in band bending in the polyacetylene with metal deposition were directly observed by x‐ray photoemission spectroscopy and correlated with I‐V transport measurements. Our results indicate that the mechanism for Schottky‐barrier formation in polyacetylene is the electrostatic match of work functions at the metal‐polyacetylene interface and that there are no intrinsic or extrinsic filled interface states within the polyacetylene band gap.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Optical properties of low‐pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eV

B. G. Bagley, D. E. Aspnes, A. C. Adams, and C. J. Mogab

Appl. Phys. Lett. 38, 56 (1981); http://dx.doi.org/10.1063/1.92131 (3 pages) | Cited 50 times

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The optical properties of undoped and P‐doped silicon prepared by low‐pressure chemical vapor deposition were measured by spectroscopic ellipsometry over the energy range 3.0–6.0 eV. A marked effect of material microstructure is observed. Approximate values of the density deficit and of the volume fractions of crystalline and amorphous material are estimated as components of the microstructure by comparing measured spectra to those synthesized from constituent spectra in the Bruggeman effective‐medium approximation.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
81.40.Tv Optical and dielectric properties related to treatment conditions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Observation of electrochromism in solid‐state anodic iridium oxide film cells using fluoride electrolytes

C. E. Rice and P. M. Bridenbaugh

Appl. Phys. Lett. 38, 59 (1981); http://dx.doi.org/10.1063/1.92132 (3 pages) | Cited 7 times

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Thin film cells of composition SnO2/AIROF/fluoride/Au have been constructed, where AIROF is anodic iridium oxide film and fluoride is PbF2 on PbSnF4. These devices exhibit reversible electrocoloration and bleaching, with response times as low as 0.1 sec. The behavior of these cells is consistent with the anion insertion mechanism for AIROF electrochromism.
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78.20.Jq Electro-optical effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.60.Dw Photodiodes; phototransistors; photoresistors
82.47.-a Applied electrochemistry
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