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15 May 1981

Volume 38, Issue 10, pp. 731-827

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Vibration quenching of HgBr(X 2Σ+1/2)

H. Helvajian and C. Wittig

Appl. Phys. Lett. 38, 731 (1981); http://dx.doi.org/10.1063/1.92168 (3 pages) | Cited 10 times

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We report a study of the time evolution of different groups of HgBr (X2Σ+1/2) vibrational level densities which are quenched by collisions with He. Vibrational quenching is efficient down to the lowest v″ levels that we are able to monitor, indicating that energy can be efficiently extracted from the HgBr (B→X) laser, even when tuning to frequencies other than those with the highest gain.
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82.40.Bj Oscillations, chaos, and bifurcations
82.20.Pm Rate constants, reaction cross sections, and activation energies
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)
34.20.-b Interatomic and intermolecular potentials and forces, potential energy surfaces for collisions

Return‐current electron streams in high‐intensity laser target interaction

P. A. Jaanimagi, N. A. Ebrahim, N. H. Burnett, and C. Joshi

Appl. Phys. Lett. 38, 734 (1981); http://dx.doi.org/10.1063/1.92169 (3 pages) | Cited 38 times

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X‐ray streak photography of the interaction of a nanosecond CO2 laser pulse with large‐diameter foil targets shows the presence of an annular x‐ray emitting region which expands away from the focal spot with a veclocity up to 109 cm/sec. This region exhibits laser‐polarization‐dependent asymmetry, and it is postulated that it is formed by a return current of fast electrons bombarding the front of the target foil. It appears likely that this phenomenon is responsible in part for anomalous lateral energy transport and magnetic field generation in such experiments.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.30.-q Plasma dynamics and flow
52.70.-m Plasma diagnostic techniques and instrumentation

Electrical conductivity of Al‐implanted films of ZnS

C. B. Thomas, H. S. Reehal, A. J. Warren, and J. M. Gallego

Appl. Phys. Lett. 38, 736 (1981); http://dx.doi.org/10.1063/1.92170 (3 pages) | Cited 3 times

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Films of ZnS have been deposited by rf sputtering and subsequently implanted with Al. Examination of the conductivities, after annealing, shows that Al is effective in decreasing the film resistivity. At ∼ 300 K the room‐temperature conductivity could be reduced to 10−2 Ω−1 cm−1 compared with 10−10 Ω−1 cm−1 in undoped films. The small activation energy of ∼ 0.1 eV of the electrical conductivity and the temperature dependence of the thermoelectric power may possibly be indicative of impurity conduction.
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72.20.Fr Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
81.15.Cd Deposition by sputtering

Synchronously pumped mode‐locked CdS platelet laser

C. B. Roxlo and M. M. Salour

Appl. Phys. Lett. 38, 738 (1981); http://dx.doi.org/10.1063/1.92171 (3 pages) | Cited 8 times

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We report pulses as short as 8 ps obtained from a mode‐locked cw optically‐pumped semiconductor laser. The sample was a CdS platelet at a temperature of 95 K longitudinally pumped by a mode‐locked Ar+ laser. The output power was 3.2 mW with 8‐ps pulses, and powers greater than 10 mW have been observed with 10‐ps pulses. Laser performance is quite independent of cavity length as compared to synchronously pumped dye lasers, indicating that passive pulse shaping may be taking place.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Optical time domain reflectometer for single‐mode fiber at selectable wavelengths

B. S. Kawasaki, K. O. Hill, and D. C. Johnson

Appl. Phys. Lett. 38, 740 (1981); http://dx.doi.org/10.1063/1.92147 (3 pages) | Cited 3 times

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Optical time domain reflectometry by backscattered light in a single‐mode fiber is demonstrated. The experiment employs a novel efficient single‐mode/multimode coupling device and also a powerful and versatile multiwavelength mode‐locked and pulsed optical source.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Low‐order TE0q operation of a CO2 laser for transmission through circular metallic waveguides

M. E. Marhic and E. Garmire

Appl. Phys. Lett. 38, 743 (1981); http://dx.doi.org/10.1063/1.92172 (3 pages) | Cited 23 times

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We report the separate TE01 and TE02 operation of a CO2 laser in a hybrid oscillator formed by placing a circular metallic waveguide and a focusing lens inside the cavity of an otherwise conventional laser. With the TE01 output focused into a passive waveguide outside the cavity, transmission in excess of 90% has been measured through a 31‐cm‐long, 0.5‐mm‐i.d. straight metallic tube. Bending increased the losses far more than originally anticipated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.62.-b Laser applications
42.79.Gn Optical waveguides and couplers

Absolute two‐photo fluorescence with low‐power cw lasers

Ida M. Catalano and Aldo Cingolani

Appl. Phys. Lett. 38, 745 (1981); http://dx.doi.org/10.1063/1.92173 (3 pages) | Cited 5 times

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A method for absolute two‐photon cross‐section‐value γ2 evaluation by means of one‐ and two‐photon fluorescence comparative measurements and using a low‐power, single‐mode cw laser is presented. This method is applied to a rhodamine B solution. The experimental value γ2 we obtained is compared with previous experimental data measured by a high‐power laser source.
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42.50.-p Quantum optics
78.55.Bq Liquids

Interferometric measurements with laser FM sidebands

G. C. Bjorklund, K. Jain, and J. D. Hope

Appl. Phys. Lett. 38, 747 (1981); http://dx.doi.org/10.1063/1.92174 (3 pages) | Cited 6 times

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Hysteresis in piezoelectric transducers down to 20 Å and gas pressure changes as small as 10 mTorr are measured by locking a laser FM sideband to an interferometer resonance. In addition, rapid monitoring of large excursion motions with 200‐Å accuracy is achieved using an ’’optical frequency comb’’ consisting of multiple FM sidebands.
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07.60.Ly Interferometers

Amplified spontaneous‐emission quantum beats in flash‐pumped H20 vapor

Nabil M. Lawandy and D. W. Robinson

Appl. Phys. Lett. 38, 750 (1981); http://dx.doi.org/10.1063/1.92148 (2 pages)

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Flashlamp excitation of H2O vapor in the 10–80‐mTorr pressure range has produced a population inversion on the (001), g = 3, 954−945 transition. This has resulted in a modulated emission at 115 cm−1. The oscillations on the amplified spontaneous‐emission signal are interpreted as quantum beats between magnetic hyperfine levels split by an I⋅J interaction. Analysis of the data results in a splitting of 1.4 MHz and dephasing rates of 7.8 MHz/Torr for H2O‐H2O, 0.5 MHz/Torr for He‐H2O, and 1.7 MHz/Torr for Ar‐H2O mixtures.
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33.15.Pw Fine and hyperfine structure
33.90.+h Other topics in molecular properties and interactions with photons (restricted to new topics in section 33)
33.80.Be Level crossing and optical pumping
33.80.-b Photon interactions with molecules

Optical bistability using a magneto‐optic modulator

Shinsuke Umegaki, Hiroaki Inoue, and Toshihiko Yoshino

Appl. Phys. Lett. 38, 752 (1981); http://dx.doi.org/10.1063/1.92149 (3 pages) | Cited 6 times

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Optical bistability is realized using a Faraday rotator which has a high rotating power owing to multiple reflections in a planar glass plate. The linearly polarized light is modulated by the coil current of the electromagnet. Optical hysteresis is observed when the current is changed in proportion to the intensity of the light transmitted through the modulator. An application of this device to stabilizing the light intensity of the cw laser intensity is described.
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42.79.Hp Optical processors, correlators, and modulators
85.70.Sq Magnetooptical devices

Experimental observation of anomalous electromagnetic absorption in thin‐layered media

A. Amittay, P.D. Einziger, and T. Tamir

Appl. Phys. Lett. 38, 754 (1981); http://dx.doi.org/10.1063/1.92150 (3 pages) | Cited 4 times

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The anomalous high absorption predicted to occur for an optical beam incident on a thin multilayered configuration having only slight intrinsic losses has been verified by means of a microwave model. This observation is consistent with a leaky‐wave interpretation for the reflection properties of the absorbing layered structure.
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03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.25.Bs Wave propagation, transmission and absorption
73.61.Ng Insulators
77.55.-g Dielectric thin films

Spatial resolution of an intracavity image upconverter

F. L. Schow, A. Riazi, O. P. Gandhi, and R. W. Grow

Appl. Phys. Lett. 38, 757 (1981); http://dx.doi.org/10.1063/1.92151 (2 pages) | Cited 3 times

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An intracavity image upconversion system, using a proustite crystal and a flashlamp‐pumped dye laser, is described. Experimental results regarding the spatial resolution of the system are also presented, and the conversion efficiency is discussed.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Enhanced second‐harmonic generation by counter‐propagating guided optical waves

P. J. Vella, R. Normandin, and G. I. Stegeman

Appl. Phys. Lett. 38, 759 (1981); http://dx.doi.org/10.1063/1.92152 (2 pages) | Cited 18 times

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Second‐harmonic light generated by mixing oppositely propagating guided waves in LiNbO3 waveguides was enhanced ∼500‐fold by varying the refractive index of the medium above the LiNbO3 surface.
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42.82.-m Integrated optics
42.65.-k Nonlinear optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

LiNbO3 surface‐acoustic‐wave edge‐bonded transducers on ST quartz and 〈001〉 cut GaAs

D. E. Oates and R. A. Becker

Appl. Phys. Lett. 38, 761 (1981); http://dx.doi.org/10.1063/1.92153 (2 pages) | Cited 2 times

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LiNbO3 surface‐acoustic‐wave edge‐bonded transducers have been fabricated on ST quartz and 〈001〉 cut GaAs substrates. Efficient transduction has been demonstrated with fractional bandwidths of 50 and 91% for the ST quartz and GaAs substrates, respectively. The devices have a center frequency in the vicinity of 100 MHz. Conversion loss as low as 4 dB has been measured. A model which accurately predicts this transducer performance has been devised.
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43.38.Ar Transducing principles, materials, and structures: general
43.38.Fx Piezoelectric and ferroelectric transducers
43.55.+p Architectural acoustics

Penning ionization spectroscopy using the optogalvanic effect

A. Ben‐Amar, R. Shuker, G. Erez, and E. Miron

Appl. Phys. Lett. 38, 763 (1981); http://dx.doi.org/10.1063/1.92154 (3 pages) | Cited 13 times

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The optogalvanic effect is proposed and demonstrated as a new technique for quasiresonant Penning ionization spectroscopy in a discharge plasma of mixtures of rare gases and metal vapors. A calcium and neon mixture is used as a prototype. Neon’s lowest metastable level, 3P2 at 134 034 cm−1, is within kT from the excited state of 2D3/2,5/2 of Ca+. Thus Penning ionization occurs to an excited state of the ion. This process strongly alters the optogalvanic signal and has its own signature. In fact, other energy transfer processes should also change the time dependence of the optogalvanic signal.
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52.20.-j Elementary processes in plasmas
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Reduction of threading dislocations in iso‐epitaxial layers grown on (001) InP substrates by misfit stresses

S. N. G. Chu, S. Mahajan, K. E. Strege, W. D. Johnston, and A. A. Ballman

Appl. Phys. Lett. 38, 766 (1981); http://dx.doi.org/10.1063/1.92155 (3 pages) | Cited 5 times

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A general reduction of threading dislocations over a large area of a Te‐doped InP layer, grown on (001) InP:Fe by vapor phase epitaxy has been observed in the presence of interfacial misfit dislocations. However, near the edge of the epi‐layer, the dislocation density increases considerably. These observations have been rationalized in terms of the misfit stress‐induced glide of the threading dislocations. The estimated misfit strain is ∼0.2% and evidently results from stoichiometry mismatch between the epi‐layer and the substrate.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.40.Fy Semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology

Intrinsic and deep‐level photoacoustic spectroscopy of GaAs (Cr) and of other bulk semiconductors

L. Eaves, H. Vargas, and P. J. Williams

Appl. Phys. Lett. 38, 768 (1981); http://dx.doi.org/10.1063/1.92156 (3 pages) | Cited 16 times

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Previous work on photoacoustic spectroscopy (PAS) of semiconductors has been restricted to material in powder form. This letter shows that PAS can also be used to study intrinsic and extrinsic (impurity) absorption of semiconductors in bulk, single‐crystal form. For GaAs (Cr) the technique can easily detect Cr impurities at 5×1016 cm−3 level. The effects of surface preparation on the spectra are discussed.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Channel electron conduction in laser‐annealed polycrystalline silicon metal‐oxide semiconductor field‐effect transistors

Han‐Sheng Lee

Appl. Phys. Lett. 38, 770 (1981); http://dx.doi.org/10.1063/1.92157 (3 pages) | Cited 5 times

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A scanned cw Ar+ laser was used to anneal the polycrystalline silicon on nitride structures. Laser power varied from l0 to 15 W in increments of 1 W, the beam diameter was ∼40 μm and the scan rate was ∼12.5 cm/s. The measured field‐effect electron mobility of the metal‐oxide semiconductor field effect transistor fabricated on the annealed silicon increases with increasing laser power. In transistors annealed at power ⩽11 W, an intercrystalline potential barrier resulting from the electron trapping at crystallite and grain boundary regions was found to be the dominant factor in the channel electron conduction. In transistors annealed at power ⩾ 12 W, channel conduction is limited by scattering from surface structure imperfections.
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72.20.Fr Low-field transport and mobility; piezoresistance
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Growth of single‐crystal metastable semiconducting (GaSb)1−xGex films

K. C. Cadien, A. H. Eltoukhy, and J. E. Greene

Appl. Phys. Lett. 38, 773 (1981); http://dx.doi.org/10.1063/1.92158 (3 pages) | Cited 47 times

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Epitaxial metastable (GaSb)1−xGex alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low‐energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second‐phase precipitates. Annealing experiments indicated that the metastable films exhibit good high‐temperature stability and that they transform through a continuous series of GaSb‐rich and Ge‐rich phases in which the solute concentrations decrease until the equilibrium two‐phase alloy is obtained. While the calculated free‐energy difference between the single‐phase metastable and equilibrium states is ∼18 meV, the measured activation barrier for the transformation is ∼3 eV. All films were p‐type with room‐temperature hole concentrations varying from 1016 to 1019 cm−3 and mobilities between 10 and 720 cm2/ V s, depending on film composition.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Disorder of an AlAs‐GaAs superlattice by impurity diffusion

W. D. Laidig, N. Holonyak, M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen

Appl. Phys. Lett. 38, 776 (1981); http://dx.doi.org/10.1063/1.92159 (3 pages) | Cited 374 times

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Data are presented showing that Zn diffusion into an AlAs‐GaAs superlattice (41 Lz∼45‐Å GaAs layers, 40 LB∼150‐Å AlAs layers), or into AlxGa1−xAs‐GaAs quantum‐well heterostructures, increases the Al‐Ga interdiffusion at the heterointerfaces and creates, even at low temperature (<600 °C), uniform compositionally disordered AlxGa1−xAs. For the case of the superlattice, the diffusion‐induced disordering causes a change from direct‐gap AlAs‐GaAs (Eg∼1.61 eV) to indirect‐gap AlxGa1−xAs (x∼0.77, EgX∼2.08 eV).
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61.72.jd Vacancies
61.72.jj Interstitials
78.45.+h Stimulated emission
64.70.K- Solid-solid transitions
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Heteroepitaxy of vacuum‐evaporated Ge films on single‐crystal Si

B.‐Y. Tsaur, M. W. Geis, John C. C. Fan, and R. P. Gale

Appl. Phys. Lett. 38, 779 (1981); http://dx.doi.org/10.1063/1.92160 (3 pages) | Cited 45 times

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Heteroepitaxial Ge films on 〈100〉 and 〈111〉 Si substrates have been prepared by vacuum evaporation. The films were deposited in moderate vacuum (10−6 Torr) at a rate of ∼10 Å/sec, with the substrates heated to 350–750 °C. The crystalline perfection of the films depends on both substrate orientation and temperature. The best films were obtained on 〈100〉 Si substrates heated to 550 °C. Heteroepitaxial GaAs layers of excellent crystal quality have been grown by chemical vapor deposition on such Ge films. GaAs shallow‐homojunction solar cells with conversion efficiencies up to 12% at AM1 have been successfully fabricated.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.-y Defects and impurities in crystals; microstructure
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ion implantation in Si using a high‐density CO2 laser‐produced boron plasma flux

W. T. Silfvast and B. Tell

Appl. Phys. Lett. 38, 782 (1981); http://dx.doi.org/10.1063/1.92161 (3 pages) | Cited 1 time

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Implantation of boron ions in n‐type Si wafers was achieved with the plasma flux from a CO2 laser‐produced boron plasma. Junction depths of up to 0.4 μm and peak concentrations of boron atoms of greater than 1020 cm−3 were achieved with a single 7‐J CO2 TEA laser pulse. The measured ion energies of ∼1 keV in the boron flux resulted both in the high concentration near the surface and also the anomalous deep penetrating tail.
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61.72.U- Doping and impurity implantation
79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Chemical basis for InP‐metal Schottky‐barrier formation

L. J. Brillson, C. F. Brucker, A. D. Katnani, N. G. Stoffel, and G. Margaritondo

Appl. Phys. Lett. 38, 784 (1981); http://dx.doi.org/10.1063/1.92162 (3 pages) | Cited 38 times

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Soft‐x‐ray photoemission measurements of ultrahigh vacuum‐cleaved InP‐metal interfaces reveal two classes of microscopic chemical structure. Reactive metal (Al,Ni)‐InP interfaces display cation‐rich outdiffusion, atomically abrupt microstructure, and low Schottky‐barrier height (ϕSB), while unreactive metal (Au, Cu)‐InP interfaces exhibit anion‐rich outdiffusion, diffuse microstructure, and high ϕSB . For InP and other III‐V compound semiconductor‐metal junctions, chemical bond strength dominates local atomic structure and the type of electrically‐active sites produced near the interface. These features can be controlled extrinsically by Al or Ni interlayers.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Microdefects distribution in Czochralski‐grown silicon crystals

A. Ohsawa, K. Honda, S. Shibatomi, and S. Ohkawa

Appl. Phys. Lett. 38, 787 (1981); http://dx.doi.org/10.1063/1.92163 (2 pages) | Cited 8 times

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Striated microdefect distribution (swirl defects) are formed by the heat treatment in Czochralski‐grown silicon crystals. The striation observed by etching has two period components 1–2 mm and 300–500 μm along growth direction. The corresponding microdistribution of oxygen was examined by the scanning infrared absorption method with the collimated beam of 100 μm in diameter. The results show that the distribution with the period of 1–2 mm was only observed, but not the microdistribution with the period of 300–500 μm. It is proposed from the results that microdefects are originated at a high oxygen‐concentration region from the nuclei which were introduced in a striated pattern with the period of 300–500 μm during crystal growth. The nucleus is not interstitial oxygen itself.
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61.72.S- Impurities in crystals
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Gh Other heat and thermomechanical treatments

Highly stable, photosensitive evaporated amorphous silicon films

B. Y. Tong, P. K. John, S. K. Wong, and K. P. Chik

Appl. Phys. Lett. 38, 789 (1981); http://dx.doi.org/10.1063/1.92164 (2 pages) | Cited 9 times

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Vacuum‐evaporated pure amorphous silicon films have been successfully hydrogenated in a Theta‐pinch plasma source to give high photoconductivity. Unlike films produced by glow discharge of silane gas, these films are highly stable against heat, intense light illumination, moisture, and other atmospheric contamination. Structural change in the bulk Si matrix being absent, a comparison of properties of films before and after plasma treatment can provide valuable information on pure hydrogenation effects.
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72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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