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1 Jun 1981

Volume 38, Issue 11, pp. 833-952

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Bistable optical switch using a yttrium‐iron‐garnet crystal with phase matching films

M. Shirasaki, N. Tagaki, and T. Obokata

Appl. Phys. Lett. 38, 833 (1981); http://dx.doi.org/10.1063/1.92209 (2 pages) | Cited 6 times

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Show Abstract
A magneto‐optical switch using a yttrium‐iron‐garnet crystal plate with phase matching films requiring a drive voltage of only 5V is demonstrated at 1.3 μm wavelength. Using a semihard magnetic material, we developed a bistable magneto‐optical switch which drives with a switching speed of 20 μs. An extinction ratio of 24 dB was obtained.
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42.65.-k Nonlinear optics

A new current‐injection heterostructure laser: The double‐barrier double‐heterostructure laser

W. T. Tsang

Appl. Phys. Lett. 38, 835 (1981); http://dx.doi.org/10.1063/1.92210 (3 pages) | Cited 5 times

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A new semiconductor current injection heterostructure laser, the double‐barrier double‐heterostructure (DBDH) laser, is fabricated by incorporating a pair of very thin (250–450 Å) unidirectionally graded barriers of very wide band gaps (≳ 2.00 eV) between the active layer and the uniform cladding layers of the conventional double‐heterostructure laser. As a result, the beam divergence of this new heterostructure laser can be independently varied by changing the AlAs composition of the uniform cladding layers without affecting the temperature stability of the threshold Ith, the external differential quantum efficiency ηD, and possibly the reliability of the laser. With these lasers, excellent temperature stability of Ith , ηD spontaneous emission level, and abrupt transition from a light‐emitting diode mode to laser mode were achieved and maintained up to temperatures as high as 276 °C. Narrow beam divergence ∼ 26° and low Ith ∼1 kA/cm2 were also obtained simultaneously from the same lasers. The present DBDH laser wafers were grown by molecular beam epitaxy.
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81.10.Fq Growth from melts; zone melting and refining
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology

A new set of space‐averaged time‐dependent equations for laser systems

I. Last (Lyast) and M. Baer

Appl. Phys. Lett. 38, 838 (1981); http://dx.doi.org/10.1063/1.92211 (3 pages) | Cited 2 times

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The semiclassical equations of a three‐level laser system are considered in this work. By applying the rotating wave approximations, a new simplified set of space‐averaged, but time‐dependent equations were obtained. The equations were found to be reliable for a finite polarization decay constant and in the range of weak and intermediate pumping intensities (pulsed) not larger than 1011 sec−1.
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42.50.-p Quantum optics
42.55.-f Lasers
85.60.Jb Light-emitting devices

Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature

C. Weisbuch, R. Dingle, P. M. Petroff, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 38, 840 (1981); http://dx.doi.org/10.1063/1.92212 (3 pages) | Cited 49 times

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The structural and optical properties of multiquantum‐well (MQW) structures grown by molecular beam epitaxy are strongly dependent on the substrate temperature Ts during the growth. A study of the optimization of MQW structures as a function of Ts is carried out using optical and electron microscopy and photoluminescence characterization. Optimal temperatures in the range 670–730 °C are shown to yield smooth free surfaces and interfaces and high quantum efficiencies.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors
75.20.Ck Nonmetals

Absorption and gain measurements in the KrF laser medium at high pump rate

C. B. Edwards, F. O’Neill, and M. J. Shaw

Appl. Phys. Lett. 38, 843 (1981); http://dx.doi.org/10.1063/1.92213 (3 pages) | Cited 15 times

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Losses have been measured at 257.2 nm in e‐beam‐pumped, KrF laser mixtures at pump rates up to 4 MW/cm3 and pressures up to 3000 Torr. A maximum absorption of 3.5% cm−1 is observed in a gas mixture of 4‐Torr F2, 125‐Torr Kr, and 2871‐Torr Ar. Losses are reduced in the presence of lasing. The absorption cross section of Kr2F∗ at 257.2 nm is estimated to be 1.8(±1.1)×10−17 cm2. Net gain has been measured as a function of pump rate in a gas mixture of 4‐Torr F2, 125‐Torr Kr, and 1371‐Torr Ar. A net gain of 22% cm−1 and a gain to nonsaturable loss ratio ∼20 have been observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.25.Bs Wave propagation, transmission and absorption

A Schottky‐barrier‐delineated stripe structure for a GaInAsP‐InP cw Laser

J. C. Bouley, G. Chaminant, J. Charil, P. Devoldere, and M. Gilleron

Appl. Phys. Lett. 38, 845 (1981); http://dx.doi.org/10.1063/1.92214 (3 pages) | Cited 2 times

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A new stripe geometry for cw GaInAsP‐InP layers is presented. The laser consists of a stripe contact defined on the In0.53 Ga0.47 As cap layer of a conventional double heterostructure. It is surrounded by two lateral‐reverse‐biased Schottky diodes fabricated onto the p‐type confinement layer. These lasers have a threshold curent of 100 mA for 320‐μm‐long and 20‐μm‐wide stripes and operate in the zero‐order transverse mode.
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73.30.+y Surface double layers, Schottky barriers, and work functions
42.55.Px Semiconductor lasers; laser diodes

Low‐frequency noise characteristics of channel substrate planar GaAlAs laser diodes

R. O. Miles, A. Dandridge, A. B. Tveten, T. G. Giallorenzi, and H. F. Taylor

Appl. Phys. Lett. 38, 848 (1981); http://dx.doi.org/10.1063/1.92215 (3 pages) | Cited 11 times

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The influence of external feedback on low‐frequency noise generation (100 Hz–10 kHz) in single longitudinal and transverse mode channel substrate planar laser diodes is reported. An increase in noise by as much as 60 dB was induced by external feedback as small as 0.04%. The induced intensity variations were observed to be sensitive to both phase and amplitude of the externally reflected light.
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42.55.Px Semiconductor lasers; laser diodes
72.70.+m Noise processes and phenomena

A unidirectional, pulsed far‐infrared ring laser

W. A. Peebles, D. Umstadter, D. L. Brower, and N. C. Luhmann

Appl. Phys. Lett. 38, 851 (1981); http://dx.doi.org/10.1063/1.92195 (3 pages) | Cited 3 times

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The first study of a pulsed, far‐infrared, ring laser is described. Unidirectional, traveling‐wave operation is observed, thereby eliminating the spatial hole burning effects present in linear cavities. Single‐mode output powers of 100 kW have been obtained.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Calculation of vibrations of thick piezoceramic disk resonators

H. U. Schwarzenbach, H. Lechner, B. Steinle, H. P. Baltes, and P. Schwendimann

Appl. Phys. Lett. 38, 854 (1981); http://dx.doi.org/10.1063/1.92196 (2 pages)

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Axially symmetrical vibrations of thick circular disk resonators made of polarized piezoelectric ceramic material excited by electrodes on the faces of the disk are calculated from the linear constitutive equations of a piezoelectric solid and the pertinent elastic and electrical boundary conditions using Hamilton’s variational principle and the boundary method of Trefftz. Good agreement with speckle heterodyne interferometric measurements of the waveforms is obtained.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.40.Dx Vibrations of membranes and plates

Rayleigh wave reflection at plate edges

K. Portz, G. I. Stegeman, and A. A. Maradudin

Appl. Phys. Lett. 38, 856 (1981); http://dx.doi.org/10.1063/1.92197 (3 pages) | Cited 3 times

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Plate mode expansions are used to evaluate the reflection, transmission, and bulk conversion of Rayleigh waves incident on the end of an isotropic plate of variable thickness.
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68.35.Ja Surface and interface dynamics and vibrations

Effects of high angles of convergence on V(z) in the scanning acoustic microscope.

C. J. R. Sheppard and T. Wilson

Appl. Phys. Lett. 38, 858 (1981); http://dx.doi.org/10.1063/1.92198 (2 pages) | Cited 65 times

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An investigation is made of the effects of using high numerical aperture acoustic lenses on the V(z) respsonse in acoustic microscopy. Theoretical results are presented for a perfectly reflecting object in an aplanatic system and show marked differences from the paraxial predictions. This suggests that for accurate determination of surface elastic parameters the effects of high angles of convergence should be taken into account.
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43.60.Qv Signal processing instrumentation, integrated systems, smart transducers, devices and architectures, displays and interfaces for acoustic systems

Annealing ambient: A useful probe for interface interactions in thin films

Chin‐An Chang

Appl. Phys. Lett. 38, 860 (1981); http://dx.doi.org/10.1063/1.92199 (3 pages) | Cited 14 times

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The annealing ambient in thin‐film diffusion studies is shown to be a useful probe for the interface interactions in thin films. The earlier proposed surface potential model for the ambient effects has been successful in correlating the known ambient effects and predicting new ones for many systems. Based on the concepts of this model, a catalytic mechanism is proposed in which the ambient species can accelerate or hinder the initial mixing process at the interfaces, thereby affecting all the diffusion and reactions that follow. An example is shown where the interdiffusion in the Au/Cr films in an air ambient can be completely suppressed by CO.
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66.30.Lw Diffusion of other defects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Md Surface thermodynamics, surface energies

Assessment by in situ ellipsometry of composition profiles of Ga1−xAlxAs‐GaAs heterostructures x

F. Hottier and G. Laurence

Appl. Phys. Lett. 38, 863 (1981); http://dx.doi.org/10.1063/1.92200 (3 pages) | Cited 8 times

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Quantitive assessment of the composition profiles of Ga1‐xA1xAs‐GaAs heterostructures, which usually relies on Auger or secondary‐ion mass spectroscopy profiling techniques, can be gained by numerical analysis of in situ ellipsometry measurements. An inversion procedure that allows the computation of the refractive index profile from the ellipsometric angles measured during growth has been developed and applied to the assessment of a GaAs→ Ga1‐xA1xAs‐GaAs transition obtained in a metalorganic vapor phase epitaxy reactor.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) and p‐type silicon

H. Norde, J. de Sousa Pires, F. d’Heurle, F. Pesavento, S. Petersson, and P. A. Tove

Appl. Phys. Lett. 38, 865 (1981); http://dx.doi.org/10.1063/1.92201 (2 pages) | Cited 97 times

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Some rare‐earth elements, Tb, Er, Yb (including Y) and some of their respective silicides were found to make ohmic contacts to n‐type silicon. Forward I/V and photoresponse measurements give values of about 0.7 eV for the Schottky‐barrier height to p‐type silicon. The sum of this value and of the experimentally estimated barrier height to n‐type silicon, 0.4 eV, corresponds to the band gap of silicon.
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73.40.Ns Metal-nonmetal contacts
73.61.At Metal and metallic alloys
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Heterogeneous distribution of interstitial oxygen in annealed Czochralski‐grown silicon crystals

Fumio Shimura, Yoshitake Ohnishi, and Hideki Tsuya

Appl. Phys. Lett. 38, 867 (1981); http://dx.doi.org/10.1063/1.92202 (3 pages) | Cited 21 times

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It is shown that interstitial oxygen infrared (IR) absorption at 515 cm−1 decreases anomalously compared with the absorption at 1106 cm−1 in heat‐treated Czochralski‐grown silicon wafers. This phenomenon is described by the close correlation between the absorption coefficient ratio αr (α1106/α515), the half‐bandwidth of the 1106‐cm−1 peak, and the precipitated oxygen content during heat treatments. As a result, it is suggested that on the basis of IR absorption spectrum data interstitital oxygen atoms distribute heterogeneously in a silicon matrix as the forestage of Si‐0 complex precipitation.
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81.40.Gh Other heat and thermomechanical treatments
78.30.Hv Other nonmetallic inorganics

Simultaneous modulation of electron and hole conductivity in a new periodic GaAs doping multilayer structure

K. Ploog, H. Künzel, J. Knecht, A. Fischer, and G. H. Döhler

Appl. Phys. Lett. 38, 870 (1981); http://dx.doi.org/10.1063/1.92203 (3 pages) | Cited 21 times

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A new periodic n‐p doping multilayer structure in GaAs grown by molecular beam epitaxy is presented, in which the concentration of electrons and holes in the respective doping regions and thereby the conductivity can be varied simultaneously by more than 1012 carriers cm−2 per layer by an external potential difference eUnp applied between the constituent n‐ and p‐type layers. The intriguing properties of this prototype of a bulk multijunction field‐effect transistor structure result from a suppression of the direct electron‐hole recombination by a space‐charge potential periodically modulated in the direction of layer growth. The observed data are in excellent agreement with the calculated characteristics using the preselected design parameters of the structure.
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72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

Microsecond time‐scale Si regrowth using a line‐source electron beam

J. A. Knapp and S. T. Picraux

Appl. Phys. Lett. 38, 873 (1981); http://dx.doi.org/10.1063/1.92204 (3 pages) | Cited 21 times

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A line‐source electron beam annealing system has been used to regrow ion‐implanted amorphous layers on (100) Si within dwell times of 150–600 μs. The results indicate solid‐phase epitaxial regrowth at interface velocities as high as ∼3×107 Å/s. This solid‐phase regrowth leads to minimum diffusion, in contrast to pulsed annealing in the liquid phase. The regrowth crystalline quality as measured by backscattering/channeling is nearly as good as for virgin Si. Line‐source annealing can lead to reductions in processing times by factors of 104–106, compared to present cw spot annealing. The observed regrowth is shown to agree closely with calculation when oven regrowth data are extrapolated to temperatures near the melting point of crystalline Si. Our results indicate no large reduction of the melting point for amorphous Si, in constrast to a recent report.
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64.70.K- Solid-solid transitions
61.80.Fe Electron and positron radiation effects
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.40.Gh Other heat and thermomechanical treatments

Arsenic‐implanted Si layers annealed using a cw Xe arc lamp

C. Drowley and C. Hu

Appl. Phys. Lett. 38, 876 (1981); http://dx.doi.org/10.1063/1.92205 (3 pages) | Cited 15 times

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Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid‐phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe‐lamp‐annealed samples, compared to ∼80% in samples annealed at 900 °C for 30 min.
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61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Calculation of the critical cooling rate for amorphous Pd77.5Si16.5Cu6

J. Steinberg, S. Tyagi, and A. E. Lord

Appl. Phys. Lett. 38, 878 (1981); http://dx.doi.org/10.1063/1.92206 (3 pages) | Cited 9 times

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The viscosity of the molten alloy Pd77.5Si16.5Cu6 has been determined from 744 to 1000 °C using an oscillating cup viscometer. Using this data (together with other pertinent physical data available for this alloy) in existing crystallization theory indicates that it could be made amorphous at cooling rates as low as 5–10 Ks−1. This analysis assumes strictly homogeneous nucleation. Containerless solidification will be one good testing ground for the results of this analysis.
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81.20.-n Methods of materials synthesis and materials processing

The effect of electron irradiation on the low‐temperature emission spectra from Ge‐doped Ga0.60Al0.40As grown by liquid phase epitaxy

V. Swaminathan, L. C. Kimerling, and W. R. Wagner

Appl. Phys. Lett. 38, 881 (1981); http://dx.doi.org/10.1063/1.92207 (3 pages) | Cited 1 time

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The effect of 1‐MeV electron irradiation on Ge‐doped Ga0.60Al0.40As layers grown by liquid phase epitaxy is investigated by low‐temperature photoluminescence. The irradiation is found to decrease the intensities of the pair emissions at 1.91 eV (SiGa‐SiAs) and 1.88 eV (SiGa‐GeAs) as well as the broad and weak emission at 1.55 eV due to the formation of nonradiative Ge‐related complexes of the type GeAs‐VAs. The reduction in the intensity of the 1.91‐eV band is observed to be greater than that of the 1.88‐eV band, and it increases with increasing Ge‐doping for both the bands suggesting that the production of the nonradiative defect complexes is a function of the Ge concentration. The recovery of the radiation damage is found to occur for annealing temperatures ⩾200 °C. The photoluminescence intensities of the irradiated and annealed samples are found to be significantly higher than that of the unirradiated and annealed samples. No new bands are observed in the spectral region 1.5–2.0 eV either after irradiation or after annealing.
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78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
68.55.-a Thin film structure and morphology

The origin and nature of silicon band‐gap states at the Si/SiO2 interface

J. Singh and A. Madhukar

Appl. Phys. Lett. 38, 884 (1981); http://dx.doi.org/10.1063/1.92208 (3 pages) | Cited 20 times

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We present argumenrs for the origin and nature of the U‐shaped density of interface states found at the Si/SiO2 interface and at other interfaces between nonlattice‐matched systems. These states are proposed to be band‐tail states induced by the presence of a thin, disordered semiconductor layer at the interface. They are Anderson localized states and not due to highly localized defects (extending over a few atomic sites) which may induce additional specific structure. Statistical arguments are combined with a variational principle to show that the U‐shaped density of interface states has a universal energy dependence, the width of these band tails being determined by the extent of disorder present at the interface. Comparison of the theoretical results with experimental observations is encouraging.
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71.55.Jv Disordered structures; amorphous and glassy solids
71.23.-k Electronic structure of disordered solids

A surface‐acoustic wave/metal‐oxide‐silicon field‐effect transistor memory correlator

D. L. Smythe and R. W. Ralston

Appl. Phys. Lett. 38, 886 (1981); http://dx.doi.org/10.1063/1.92216 (2 pages)

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An array of metal‐oxide‐silicon field‐effect transistors has been integrated with a surface‐acoustic wave (SAW) delay line in a hybrid gap‐coupled structure to produce a SAW‐programmable memory correlator. This device allows analog‐analog correlation of SAW input signals of 40‐MHz bandwidth and 3.5‐μs duration. Operation with a 1.8‐μs‐long rectangular pulse at a carrier frequency of 100 MHz yields a peak correlation output of about ‐46 dBm.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
85.30.Tv Field effect devices
77.65.-j Piezoelectricity and electromechanical effects

The influence of thermal point defects on the precipitation of oxygen in dislocation‐free silicon crystals

A. J. R. de Kock and W. M. van de Wijgert

Appl. Phys. Lett. 38, 888 (1981); http://dx.doi.org/10.1063/1.92217 (3 pages) | Cited 29 times

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The precipitation of oxygen in regularly grown and in situ‐quenched dislocation‐free Czochralski silicon crystals has been investigated by means of infrared absorption spectroscopy, preferential etching, and x‐ray transmission topography. In addition, the effect of doping with acceptor or donor impurities on oxygen precipitation has been studied. The experimental results indicate that at oxygen supersaturation ratios smaller than 20 the formation of nuclei for precipitation predominantly occurs via a heterogeneous in which thermal point defects, in particular silicon interstitials, play an important role.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Yx Interaction between different crystal defects; gettering effect
81.10.Fq Growth from melts; zone melting and refining

Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si

T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furman, and C. A. Evans

Appl. Phys. Lett. 38, 891 (1981); http://dx.doi.org/10.1063/1.92218 (3 pages) | Cited 13 times

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Motion and gettering of oxygen into damage regions created by back‐surface mechanical abrasion in Si has been investigated using transmission electron microscopy (TEM), scanning electron microscopy, secondary‐ion mass spectrometry profiling and secondary‐ion microscopy. Redistribution and gettering of oxygen have been detected along dislocation lines after annealing at 600 °C by both TEM and direct ion imaging. Subsequent annealing at 1050 °C produces additional gettering, SiOx nucleation, and a dramatic increase in dislocation‐line density within the initial damage region. Secondary dislocation lines extending to a depth ≃ 40 μm are also generated by the two‐stage anneal, resulting in additional gettering sites for oxygen and other impurities. In comparison, single anneals at 1050 °C produce rapid defect annihilation, oxygen outdiffusion, and loss of additional gettering efficiency.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect

Device‐quality epitaxial AlAs by metalorganic‐chemical vapor deposition

J. J. Coleman, P. D. Dapkus, N. Holonyak, and W. D. Laidig

Appl. Phys. Lett. 38, 894 (1981); http://dx.doi.org/10.1063/1.92219 (3 pages) | Cited 6 times

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The growth and characterization of high‐quality AlAs expitaxial layers on GaAs subtrates by metalorganic‐chemical vapor deposition are described. The epitaxial layers described here are grown at intermediate temperatures (750 °C) and require no unusual reactor modifications. Comparison is made between single thick epitaxial layers and an 80‐layer quantum‐well heterostructure. Low‐threshold photopumped laser data are presented, which indicate that the presence of AlAs in the active region of a laser (containing 80 AlAs‐GaAs interfaces) does not interfere with cw room‐temperature operation.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.05.C- X-ray diffraction and scattering
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