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15 Jun 1981

Volume 38, Issue 12, pp. 957-1034

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1.55‐μm narrow planar stripe InGaAsP lasers with deep Zn diffusion

Hitoshi Kawaguchi, Kenichiro Takahei, Yoshio Suzuki, and Genzo Iwane

Appl. Phys. Lett. 38, 957 (1981); http://dx.doi.org/10.1063/1.92234 (3 pages)

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Narrow planar stripe InGaAsP lasers with deep Zn diffusion are experimentally demonstrated at a wavelength of around 1.55 μm. Improved current confinement was achieved by the deep Zn diffusion structure, and low‐threshold lasers with a 3‐μm stripe were obtained. Measured far‐field patterns indicate that the lateral transverse mode is mainly determined by antiguiding. Narrow stripe lasers of this type show a tendency to operate in a multilongitudinal mode.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
72.80.Ey III-V and II-VI semiconductors

Simple rate equation model for hypothetical doubly stimulated emission of both photons and phonons in quantum‐well lasers

Herbert Kroemer

Appl. Phys. Lett. 38, 959 (1981); http://dx.doi.org/10.1063/1.92235 (3 pages) | Cited 5 times

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The dissipation processes by which electrons and holes lose energy after being trapped in quantum wells might, in a sufficiently heavily pumped quantum well laser, lead to the buildup of such a high phonon population that phonon‐assisted laser action by doubly stimulated emission of photons and phonons acquires a higher gain than unassisted laser action. The resulting mode switching exhibits a pronounced hysteresis with pump rate, which should be a characteristic identifying feature of phonon‐assisted laser action.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
63.20.K- Phonon interactions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Longitudinal mode behavior of transverse‐mode‐stabilized InGaAsP/InP double‐heterostructure laser

H. Ishikawa, H. Imai, T. Tanahashi, and M. Takusagawa

Appl. Phys. Lett. 38, 962 (1981); http://dx.doi.org/10.1063/1.92236 (3 pages) | Cited 10 times

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The longitudinal mode behavior of the transverse‐mode‐stabilized separated multiclad layer stripe geometry InGaAsP/InP double‐heterostructure lasers emitting at 1.3 and at 1.5 μm is examined at 20 °C. The superradiant side modes show that the gain is enhanced on the longer wavelength side of the lasing mode with an increase of the injection current, while the gain is suppressed with energy width of 3 meV on the shorter wavelength side of the lasing mode. The lasing longitudinal mode changes to the longer wavelength mode even under pulsed operation when injection current is increased due to the asymmetric gain spectrum. The result suggests that the intraband relaxation time of quaternary lasers is considerably longer than that of GaAlAs lasers.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Luminescence properties of GaAs‐Ga1−x Alx As double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy

P. M. Petroff, C. Weisbuch, R. Dingle, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 38, 965 (1981); http://dx.doi.org/10.1063/1.92237 (4 pages) | Cited 36 times

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Undoped double‐heterostructures (DH) and multiquantum‐well structures (MQW) grown by molecular beam epitaxy are studied by cathodoluminescence and photoluminescence. Their structural properties are established by scanning transmission electron microscopy. In DH discrete nonradiative centers are observed with densities ∼104–105 cm−2; some of them are correlated with dislocations originating in the substrate. In sharp contrast, MQW show a very uniform luminescence with no nonradiative action at dislocations. These results might explain in part the higher quantum efficiency of MQW grown by molecular beam epitaxy.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.60.Hk Cathodoluminescence, ionoluminescence

Effect of turbulence‐induced correlation on laser remote sensing errors

D. K. Killinger and N. Menyuk

Appl. Phys. Lett. 38, 968 (1981); http://dx.doi.org/10.1063/1.92238 (3 pages) | Cited 12 times

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Using a 10.6‐μm dual‐laser differential‐absorption laser remote sensing system, we have measured the short‐ and long‐term temporal correlation of the returns from topographic targets and retroreflectors in order to investigate the effect of atmospheric turbulence on laser remote sensing measurement errors. Our results quantify the improvement obtained through use of a dual‐laser system compared to that of a single‐laser system and are in good agreement with those predicted by a theory which considers the effect of partial temporal correlation on the resultant measurement error.
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42.68.Wt Remote sensing; LIDAR and adaptive systems
42.25.Lc Birefringence

Time‐resolved reflectivity during pulsed‐laser irradiation of GaAs

D. H. Lowndes and R. F. Wood

Appl. Phys. Lett. 38, 971 (1981); http://dx.doi.org/10.1063/1.92239 (3 pages) | Cited 16 times

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The first comparison of time‐resolved reflectivity (TRR) signatures for crystalline and ion implantation amorphized GaAs, during pulsed ruby laser irradiation, is reported. The inferred durations of surface melting are strikingly different for the crystalline and ion‐implanted cases. The measurements are in good agreement with the results of thermal melting model calculations for the crystalline case.
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64.70.D- Solid-liquid transitions
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy

J. R. Pawlik, W. T. Tsang, F. R. Nash, R. L. Hartman, and V. Swaminathan

Appl. Phys. Lett. 38, 974 (1981); http://dx.doi.org/10.1063/1.92240 (3 pages) | Cited 1 time

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We report pulsed‐current thresholds for stripe‐geometry lasers fabricated from some ternary active layer molecular beam epitaxially grown wafers, which are nearly temperature independent over a ≊100 °C range. Lasers from one such wafer, pulse‐operated over the practically important temperature range about room temperature, exhibit only a 3‐mA threshold decrease in going from −10 to +20 °C and only a 3‐mA increase in going from 20 to 50 °C. Fitting the data over small temperature intervals using the commonly observed exponential function for the temperature dependence of threshold (I = I0 exp(T/T0)) results in negative, infinite, and large positive values (⩾300K) for T0, as the temperature is increased from −10 to 75 °C. Lasers with such a range of threshold insensitivity may reduce pattern‐dependent effects and may have significant practical implications for the simplification of the feedback circuitry used to maintain the pre‐bias operating current in laser transmitters. Data examined over the temperature interval −55 to 260 °C show that thresholds for the anomalous temperature insenstive devices are everywhere greater than or equal to the thresholds of comparable normal devices. Independent data tends to rule out a resistive shunt model as well as a mechanism based upon the inhomogeneous incorporation of aluminum and/or dopants in the active layer. Available evidence suggests that the explanation is related to changes occurring in a normally present nonradiative mechanism.
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42.55.Px Semiconductor lasers; laser diodes
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Atomic coherence effects in resonant degenerate four‐wave mixing

J. F. Lam, D. G. Steel, R. A. McFarlane, and R. C. Lind

Appl. Phys. Lett. 38, 977 (1981); http://dx.doi.org/10.1063/1.92241 (3 pages) | Cited 16 times

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We present a study of atomic coherence effects in resonant degenerate four‐wave mixing. We find for energy levels having magnetic degeneracies, the third‐order nonlinear response resulting from two counterpropagating pump waves orthogonally polarized to an incident probe wave generates a signal whose polarization is phase conjugate to that of the incident probe wave. This effect is due to the coupling of different magnetic states resulting from coherent excitation giving rise to a net electric quadrupole. Experimental studies in Na on the D2 line at 5890 Å confirm the analysis.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Ultrasonic detection and sizing of two‐dimensional defects at long wavelengths

C. M. Fortunko

Appl. Phys. Lett. 38, 980 (1981); http://dx.doi.org/10.1063/1.92242 (3 pages) | Cited 4 times

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An ultrasonic technique is described for detecting and sizing of two‐dimensional defects. The technique is particularly suitable for detecting two‐dimensional defects in certain butt‐weldments which cannot be fully inspected by conventional radiographic and ultrasonic methods. Use is made of noncontact, electromagnetic‐acoustic transducers to excite and detect shear horizontal (SH) wave probing signals where wavelength is long compared to the defect depth dimensions. The new technique is demonstrated in conjunction with a weld fatigue testing investigation in which it is used to detect natural weld defects and to monitor crack initiation and growth under tension‐tension fatigue loading. An experimental calibration curve is given for sizing two‐dimensional surface defects, and the experimental results are explained in terms of a reciprocity relationship evaluated in the elastostatic limit.
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43.20.Fn Scattering of acoustic waves
43.15.+s Standards
43.38.Dv Electromagnetic and electrodynamic transducers
43.38.Ar Transducing principles, materials, and structures: general

Observations of low emittance‐neutralized alkali ion beams from a large‐area multistage injector

D. A. Phelps and C. B. Wharton

Appl. Phys. Lett. 38, 983 (1981); http://dx.doi.org/10.1063/1.92243 (3 pages)

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Experiments are reported on the operation of a three‐stage accel‐decel ion injector that is driven by a 500‐kV–200‐ns pulse line at a power density of ≳100 kW/cm2—previously unobserved for injectors with no simultaneous electron breakdown. Stable thermionic emission of sodium ions from an array of sixteen 3‐mm×10‐cm scintered zeolite strips is demonstrated. Observations of over 500 mA/cm2 beams are noted and attributed to uniform space‐charge–limited extraction in the first stage and 3:1 electrostatic focusing in the second stage of the injector. After passing through the third stage, 500‐V decel potential (to retard electron flow), 70% charge neutralization is achieved with a reflex triode electron source. A mean angular divergence of less than 5 mrad is deduced from profile data of the sodium ion beam and reported.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

A 100 lm/W efficacy low‐pressure Xe discharge tube

Shigeo Mikoshiba, Shoji Shirai, and Shinichi Shinada

Appl. Phys. Lett. 38, 985 (1981); http://dx.doi.org/10.1063/1.92227 (3 pages) | Cited 5 times

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The luminous efficacy of a Zn2SiO4:Mn‐coated, low‐pressure Xe‐positive‐column fluorescent tube is found to be as high as 100 l/W which corresponds to an electric to 147‐nm radiation energy conversion factor of 66%. This high efficacy can be attained under conditions (pressure)×(column diameter)≃1 Torr cm and (current density)?3 mA/cm2.
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52.80.Hc Glow; corona
32.50.+d Fluorescence, phosphorescence (including quenching)
52.80.-s Electric discharges

Interface and surface structure of epitaxial NiSi2 films

K. C. R. Chiu, J. M. Poate, J. E. Rowe, T. T. Sheng, and A. G. Cullis

Appl. Phys. Lett. 38, 988 (1981); http://dx.doi.org/10.1063/1.92222 (3 pages) | Cited 58 times

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Epitaxial NiSi2 films have been grown on (100) and (111) Si. Interface and surface structures have been examined by Rutherford backscattering and channeling, transmission electron microscopy, and low‐energy electron diffraction. The (111) interface is remarkably flat, whereas the (100) interface has {111} facets. The NiSi2 (111) surface has a bulklike periodicity parallel to the surface, whereas the (100) surface exhibits reconstruction periodicity.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Shape information in microdiffraction patterns of small metallic particles

G.Vazquez Polo, D. Romeu, and M. Jose Yacaman

Appl. Phys. Lett. 38, 990 (1981); http://dx.doi.org/10.1063/1.92223 (3 pages) | Cited 1 time

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Computer‐simulated electron diffraction patterns of small particles are investigated. The patterns show forbidden reflections which are found to be directly correlated with the shape of the particles. Therefore the study of these reflections is suggested as a new possibility for determining shape and crystallography of metal particles using single‐particle diffraction techniques.
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61.05.J- Electron diffraction and scattering
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

A note on compositionally modulated Cu‐Ni films with lattice‐commensurate wavelengths

N. K. Flevaris, D. Baral, J. B. Ketterson, and J. E. Hilliard

Appl. Phys. Lett. 38, 992 (1981); http://dx.doi.org/10.1063/1.92224 (3 pages) | Cited 27 times

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It has been found that the number and sharpness of the x‐ray satellite peaks from Cu‐Ni films containing short‐wavelength (0.6–11.4 nm) composition modulations (produced by vapor deposition) were strongly dependent on the degree to which the number of monolayers of the components in each period approached integer values. It is demonstrated that this is an important factor in accounting for the difference that has previously been observed between the x‐ray spectra from modulated metallic and semi‐conductor films.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Deuterium at the Si‐SiO2 interface detected by secondary‐ion mass spectrometry

N. M. Johnson, D. K. Biegelsen, M. D. Moyer, V. R. Deline, and C. A. Evans

Appl. Phys. Lett. 38, 995 (1981); http://dx.doi.org/10.1063/1.92225 (3 pages) | Cited 51 times

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Secondary‐ion mass spectrometry (SIMS) has been used to measure depth profiles of deuterium in thermally grown films of SiO2 on Si. Deuterium is a readily traceable element which simulates hydrogen chemistry and thereby permits detection of effective changes in the hydrogen content of annealed oxides even in the presence of high background concentrations of hydrogen in the sputtering ambient or oxide layer. For oxidized silicon annealed in atomic deuterium, SIMS profiles clearly reveal an accumulation of deuterium at the Si‐SiO2 interface. It is demonstrated that the pile‐up of deuterium is not a consequence of ion migration (’’snow plowing’’) during ion sputtering.
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66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Diffusion length of holes in a‐Si:H by the surface photovoltage method

J. Dresner, D. J. Szostak, and B. Goldstein

Appl. Phys. Lett. 38, 998 (1981); http://dx.doi.org/10.1063/1.92226 (2 pages) | Cited 35 times

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The diffusion length L for holes in undoped a‐Si:H films has been measured by using a variation of the surface photovoltage method. Values of L in the range 0.33–0.45 μ were found for samples prepared at substrate temperatures Ts = 240 °C and Ts = 330 °C. After prolonged illumination, a reduction to L<0.2 μ was observed; the original value of L was restored after annealing at 200 °C.
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72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
84.60.Jt Photoelectric conversion

Polymethyl methacrylate sensitivity variation versus the electronic stopping power at ion lithography exposure

G. M. Mladenov and B. Emmoth

Appl. Phys. Lett. 38, 1000 (1981); http://dx.doi.org/10.1063/1.92244 (3 pages) | Cited 9 times

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Experimental data for the minimum ion dose D0 during exposure and for the contrast parameter γ are presented. A dependence of D0 on the electronic stopping power but no correlation between D0 and nuclear stopping power is found. An analogical dependence on minimum absorbed electronic stopping energy density is also found. The absorbed energy density for H+ ions is comparable with X‐ray lithography data but heavier ions are more effective. For the understanding of these relations an electron excitation spike mechanism is suggested. From the non‐Rutherford backscattering experiments at 1.7–1.75 MeV the energy losses of protons in polymethyl methacrylate are found to be 25 eV/nm.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
61.80.Jh Ion radiation effects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

n+‐InP growth on InGaAs by liquid phase epitaxy

S. H. Groves and M. C. Plonko

Appl. Phys. Lett. 38, 1003 (1981); http://dx.doi.org/10.1063/1.92245 (2 pages) | Cited 7 times

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High‐quality epitaxial growth of InP over InGaAs without dissolution has been achieved by using Sn‐rich, rather than the more conventional In‐rich, solutions. This technique, which produces n+‐InP, is directly applicable to growth of p‐i‐n and avalanche photodiode structures designed for operation in the 1.55‐μm wavelength region of minimum loss in optical fibers.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Rapid oxidation via adsorption of oxygen in laser‐induced amorphous silicon

Yung S. Liu, S. W. Chiang, and F. Bacon

Appl. Phys. Lett. 38, 1005 (1981); http://dx.doi.org/10.1063/1.92246 (3 pages) | Cited 27 times

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Amorphous silicon has been produced on a single‐crystal silicon surface that was exposed to intense pulsed UV‐laser radiation at 266 nm. In addition, the formation of an oxide several tens of nanometers in thickness is observed when the irradiation takes place in an O2 or in an air ambient. Various experimental techniques including transmission electron microscopy, sputtered Auger electron spectroscopy, and differential Fourier‐transform IR spectroscopy have been employed to characterize the laser‐induced amorphous silicon and the oxide layer formed by this rapid melting and resolidification process. The present study suggests a new oxidation phenomena, namely, ’’laser‐induced oxidation.’’
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64.70.K- Solid-solid transitions
78.70.-g Interactions of particles and radiation with matter
81.20.-n Methods of materials synthesis and materials processing
81.65.-b Surface treatments

A luminescence band associated with the main electron trap in bulk gallium arsenide

A. Mircea‐Roussel and S. Makram‐Ebeid

Appl. Phys. Lett. 38, 1007 (1981); http://dx.doi.org/10.1063/1.92247 (3 pages) | Cited 29 times

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The peak energy (0.645 eV) and half‐width of a broad photoluminescence band commonly observed in bulk semi‐insulating gallium arsenide are shown to agree with those of the main electron trap (EL2) present in this type of material. The bahavior of this photoluminescence band, after thermal annealing, is also found to be compatible with that of EL2.
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78.40.Fy Semiconductors
63.20.K- Phonon interactions
79.70.+q Field emission, ionization, evaporation, and desorption

The effect of lattice mismatch on hole diffusion lengths in liquid phase epitaxial InGaAsP (λg = 1.15 μm)/InP

M. M. Tashima, L. W. Cook, N. Tabatabaie, and G. E. Stillman

Appl. Phys. Lett. 38, 1009 (1981); http://dx.doi.org/10.1063/1.92248 (3 pages) | Cited 3 times

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Hole diffusion lengths Lp were determined as a function of lattice mismatch for n‐type InGaAsP (λg = 1.15 μm) layers grown by liquid phase epitaxy on p+ (100)‐InP substrates by measuring the variation of the short‐circuit photocurrent as a focused laser beam was scanned along a beveled (∼1°) p‐n junction. The longest diffusion length (Lp ∼1.5 μm) was obtained when the epitaxial layer was lattice matched to the InP substrate, and as the mismatch increased either positively or negatively (−0.25%<Δa/a<+0.31%) Lp decreased, indicating that the bulk properties of the layer are influenced by the mismatch at the interface.
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81.10.Fq Growth from melts; zone melting and refining
72.20.Fr Low-field transport and mobility; piezoresistance

Generation of field‐sensitive interface states

John L. Crowley, Timothy J. Stultz, and Stephen K. Ichiki

Appl. Phys. Lett. 38, 1012 (1981); http://dx.doi.org/10.1063/1.92249 (3 pages) | Cited 2 times

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We have observed the generation of interface states in SiO2 metal oxide semiconductor (MOS) capacitators that are field‐ and time‐dependent as well as thermally activated. A strong correlation has been found between these metastable interface states and the radiation hardness of the MOS devices. The number of interface states generated is linearly dependent on the applied field with a threshold field for occurrence. There is a t1/4 time dependence for interface‐state generation. The generation of these field‐sensitive interface states is thermally activated with a field‐dependent activation energy.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Low‐temperature redistribution of As in Si during Pd2Si formation

I. Ohdomari, K. N. Tu, K. Suguro, M. Akiyama, I. Kimura, and K. Yoneda

Appl. Phys. Lett. 38, 1015 (1981); http://dx.doi.org/10.1063/1.92250 (3 pages) | Cited 33 times

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We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide‐Si interface into the substrate Si during Pd2Si formation at 250 °C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900 °C—30 min before silicide formation than those without the preannealing.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation

Laser chemical technique for rapid direct writing of surface relief in silicon

D. J. Ehrlich, R. M. Osgood, and T. F. Deutsch

Appl. Phys. Lett. 38, 1018 (1981); http://dx.doi.org/10.1063/1.92228 (3 pages) | Cited 83 times

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High‐resolution etching of single‐crystal and polycrystalline silicon has been demonstrated using an argon‐ion laser to control microscopic chemical reactions. Gas‐phase Cl2 or HCl is used in reactions initiated both by surface heating and by molecular photolysis. Features smaller than 5 μm and etch rates greater than 6 μm/s have been obtained. The process seems immediately suitable for a variety of problems in integrated‐circuit fabrication.
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79.20.Ds Laser-beam impact phenomena

Simultaneous bulk and surface microanalyis by electron spectroscopy

J. Cazaux, D Mouze, J. Perrin, and X. Thomas

Appl. Phys. Lett. 38, 1021 (1981); http://dx.doi.org/10.1063/1.92229 (3 pages) | Cited 3 times

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By using an original arrangement it is shown that photoelectron spectroscopy can be used to obtain at the same time the surface and the bulk composition of a sheet, several microns thick. An Al/Mg alloy is chosen to illustrate this new technique and to establish the basic principles quantifying these analyses. 108 Mg surfaces atoms (4.1015 g) have been detected, Mg surface segregation is pointed out and it is shown that oxygen (01s level) is a good converter for the detection of AlKα and MgKα x‐ray photons.
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79.60.-i Photoemission and photoelectron spectra
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.20.Kz Other electron-impact emission phenomena
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