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15 Jan 1981

Volume 38, Issue 2, pp. 63-110


High‐barrier cluster‐free AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure laser

J. J. Coleman, P. D. Dapkus, W. D. Laidig, B. A. Vojak, and N. Holonyak

Appl. Phys. Lett. 38, 63 (1981); http://dx.doi.org/10.1063/1.92261 (3 pages) | Cited 16 times

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Laser data (77 and 300 K) are presented on an AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure (QWH) grown by metalorganic‐chemical vapor deposition with an active region consisting of 13 AlAs barrier layers of size LB∼10 Å and 12 GaAs quantum wells of size Lz∼50 Å. This QWH, which is free of alloy disorder and clustering (Al‐Ga clusters) in the active region, emits on the confined particle transitions and not at the lower energies characteristic of QWH’s with AlxGa1−xAs barrier layers (and Al‐Ga clusters).
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42.55.Px Semiconductor lasers; laser diodes
81.10.Bk Growth from vapor

High–gain CO2 laser

Hiroshi Hara and Akira Fujisawa

Appl. Phys. Lett. 38, 65 (1981); http://dx.doi.org/10.1063/1.92262 (2 pages) | Cited 3 times

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A high‐gain N2‐CO2 energy transfer laser using a conical nozzle is described. A small‐signal gain of 11 m−1 was obtained at a static pressure of 18.3 Torr. In addition, an output power of 4 W was delivered from an 1.2‐cm active length.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Bistable reflection of light by an electro‐optically driven interface

Alexander E. Kaplan

Appl. Phys. Lett. 38, 67 (1981); http://dx.doi.org/10.1063/1.92263 (3 pages) | Cited 5 times

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A theory of nonresonant optical bistability, based on ’’hybrid’’ interface effect, is developed. This effect occurs upon reflection of light at a single interface of a medium driven by electro‐optical feedback. The nonlinear Snell’s and Fresnel’s formulas for the transmission regime are obtained, as well as conditions for bistable operation. The stability of steady states and characteristics of hysteresis jumps are examined as well.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.62.-b Laser applications

Measurement of recombination coefficient in a transverse electric atmospheric CO2 laser gas discharge

U. Nundy, N. S. Shikarkhane, and U. K. Chatterjee

Appl. Phys. Lett. 38, 69 (1981); http://dx.doi.org/10.1063/1.92251 (3 pages) | Cited 4 times

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The product of recombination coefficient and instantaneous electron density (γne, was measured for a UV‐preionized discharge operating at atmospheric pressure for a gas mixture containing CO2, N2, and He in the ratio 1:1:8, over a range of operating field (E/N) from 0.5×10−16 V cm2 to 6.0×10−16 V cm2. This data is used in a computer program to simulate the discharge. Good agreement is observed between experimental current and voltage with those predicted by the program. It was also found that the pulse shapes are critically dependent on γne and this must be accurate to be useful in predicting the behavior of UV‐preionized discharges.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

3.4‐TW performance of a Nd:phosphate glass laser with output aperture of 20 cm

Y. Kato, K. Yoshida, J. Kuroda, and C. Yamanaka

Appl. Phys. Lett. 38, 72 (1981); http://dx.doi.org/10.1063/1.92252 (2 pages) | Cited 6 times

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A Nd: doped phosphate glass disk amplifier can be scaled to the aperture of 20 cm with the αL product of 4.0. A laser amplifier chain using these high‐gain disk amplifiers has delivered output power of 3.4 TW at a pulse width of 100 ps. A very good beam quality has been obtained because of the cleanliness of the optical components.
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42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Selectively emissive refractory metal surfaces

H. G. Craighead, R. E. Howard, and D. M. Tennant

Appl. Phys. Lett. 38, 74 (1981); http://dx.doi.org/10.1063/1.92253 (3 pages) | Cited 6 times

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In this letter is decribed a spectrally selective tungsten light‐emitting surface, employing submicron surface texturing produced by reactive ion etching. The average emissivity of this surface throughout the visible wavelength range of 0.3–0.7 μm is greater than 0.9 compared to ∼0.4 for ordinary tungsten. At longer infrared wavelengths, however, the emissivity of the etched surface approaches that of a smooth tungsten surface. This results in enhanced efficiency in the production of visible light.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Single‐mode diode laser phase noise

A. Dandridge, A. B. Tveten, R. O. Miles, D. A. Jackson, and T. G. Giallorenzi

Appl. Phys. Lett. 38, 77 (1981); http://dx.doi.org/10.1063/1.92254 (2 pages) | Cited 20 times

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Measurements have been made of the phase noise of a single‐mode diode laser in an unbalanced Michelson interferometer, as a function of optical path difference. The noise increased linearly with increasing optical path difference. The origin of the phase noise is discussed.
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07.60.Ly Interferometers
42.55.Px Semiconductor lasers; laser diodes

Absorption spectra of garnet films between 1.0 and 1.8 μm by guided‐wave optical spectroscopy

Michel Olivier, Jean‐Claude Peuzin, Jean‐Sébastien Danel, and Didier Challeton

Appl. Phys. Lett. 38, 79 (1981); http://dx.doi.org/10.1063/1.92255 (3 pages) | Cited 3 times

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Continuous recording of the absorption spectra of thin films by an optical guided‐wave technique is demonstrated. In the case of a garnet thin film of compositoin (YSmLuCa)3(FeGe)5O12 it is shown that the near‐infrared Sm3+ absorption bands are clearly visible in contrast with conventional transmission measurement. Comparison with the absorption spectrum of bulk Sm3Fe5O12 garnet allows the determination of an Sm concentration in the film.
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78.20.-e Optical properties of bulk materials and thin films

Backscatter of CO2 laser light from an overdense Z‐pinch plasma

C. J. Walsh, J. Meyer, and B. Hilko

Appl. Phys. Lett. 38, 82 (1981); http://dx.doi.org/10.1063/1.92256 (3 pages) | Cited 7 times

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A mode‐locked train of CO2 laser pulses, 2.5‐nsec wide with 14.6 nsec between pulses, has been focused into an overdense Z‐pinch plasma at vacuum intensities up to 2×1012 W cm−2. Backscatter through the f/5 lens has been observed to grow from a large noise level which is not present in the absence of the laser, and saturate at a value ∼ 4%.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma

Merocyanine‐dye photovoltaic cell on a plastic film

T. Moriizumi and K. Kudo

Appl. Phys. Lett. 38, 85 (1981); http://dx.doi.org/10.1063/1.92264 (2 pages) | Cited 14 times

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A flexible photovoltaic cell was produced by depositing a merocyanine‐dye layer on a transparent electro‐conducting film, which is a polyester film coated with ITO (indium‐tin oxide). Two kinds of the layered structures on the films were examined; i.e., Al/merocyanine/ITO and Ag/merocyanine/ZnO/ITO structures. It was found that the latter structure was more promising for a solar cell because of a considerably better output stability and a higher conversion effiency.
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72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices

Carrier collection efficiency of a‐SiHx Schottky‐barrier solar cells

D. Gutkowicz‐Krusin, C. R. Wronski, and T. Tiedje

Appl. Phys. Lett. 38, 87 (1981); http://dx.doi.org/10.1063/1.92265 (3 pages) | Cited 22 times

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A diffusion model for the collection efficiency of a‐SiHx Schottky‐barrier solar cells is found to be in excellent agreement with experimental data. This model accounts for the poor short‐wavelength response of these devices and suggests a way for improving their performance.
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84.60.Jt Photoelectric conversion

Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures

H. Shichijo, K. Hess, and G. E. Stillman

Appl. Phys. Lett. 38, 89 (1981); http://dx.doi.org/10.1063/1.92266 (3 pages) | Cited 7 times

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We have performed a Monte Carlo simulation of high‐field transport in GaAs using a realistic band structure obtained by the empirical pseudopotential method. On this basis, a detailed study of the band structure dependence of impact ionization in GaAs is given. Our method avoids the use of the effective mass theorem or the Kane model of nonparabolicity, which are no longer accurate at high electron energies. We show (i) that the orientation dependence of the impact ionization rate is negligibly small, (ii) that the saturation velocity of electrons in GaAs is close to 6×106 cm/s at extremely high fields (this value is determined to a large extent by the band structure, and (iii) that the previous theories of impact ionization as given by Wolff, Shockley, and Baraff have numerous limitations.
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72.20.Ht High-field and nonlinear effects
72.10.-d Theory of electronic transport; scattering mechanisms
79.20.Hx Electron impact: secondary emission
85.30.De Semiconductor-device characterization, design, and modeling

A doping‐precipitated morphology in plasma‐deposited a‐Si:H

E. A. Schiff, P. D. Persans, H. Fritzsche, and V. Akopyan

Appl. Phys. Lett. 38, 92 (1981); http://dx.doi.org/10.1063/1.92267 (3 pages) | Cited 23 times

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A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma‐deposited hydrogenated amorphous silicon (a‐Si:H) within critical ranges of the diborane to silane ratio in the gas phase. The diborane level can be as low as 5 ppm and depends both on the electrode self‐bias potential and the growth rate. Undoped specimens prepared under the same deposition conditions have properties typical of device‐grade a‐Si:H. These morphology observations suggest a structural origin for some doping‐dependent properties in a‐Si:H.
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68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Slip dislocation formation during cw laser annealing of silicon

H. Baumgart, F. Phillipp, G. A. Rozgonyi, and U. Gösele

Appl. Phys. Lett. 38, 95 (1981); http://dx.doi.org/10.1063/1.92268 (3 pages) | Cited 13 times

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High‐voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser‐annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion‐implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Internal photoemission in the anodic oxide/GaAs interface

S. Yokoyama, M. Hirose, Y. Osaka, T. Sawada, and H. Hasegawa

Appl. Phys. Lett. 38, 97 (1981); http://dx.doi.org/10.1063/1.92269 (3 pages) | Cited 5 times

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The barrier height at the anodic oxide/GaAs interface has been determined by internal photoemission of the metal‐oxide‐semiconductor structures. The height of the potential barrier between the oxide and GaAs is found to be 2.62±0.05 eV for as‐grown and 2.39±0.05 eV for hydrogen‐annealed specimens. Quantum yield below the photoemission threshold is interpreted in terms of electron emission from interface states at energies above midgap of GaAs.
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81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ng Insulators

Photoluminescence studies of the Mn2+ d‐levels in Cd1−xMnxTe

M. P. Vecchi, W. Giriat, and L. Videla

Appl. Phys. Lett. 38, 99 (1981); http://dx.doi.org/10.1063/1.92270 (3 pages) | Cited 46 times

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We report on the evidence from photoluminescence measurements of the relative positions of the localized d‐levels of the Mn2+ ions with respect to the conduction and valence bands of Cd1−xMnxTe. The results indicate that the ground state 6S is approximately 0.8 eV inside the valence band for all compositions up to x=0.7. The first excited state 4G is deep inside the gap, and it represents an energy level that may substantially affect the lifetime and recombination characteristics of the carriers in the Cd1−xMnxTe system.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Acoustoelectric measurement of low carrier mobilities in highly resistive films

R. Adler, D. Janes, B. J. Hunsinger, and S. Datta

Appl. Phys. Lett. 38, 102 (1981); http://dx.doi.org/10.1063/1.92257 (2 pages) | Cited 16 times

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The acoustoelectric method of determining carrier mobility μ in semiconductor films has been modified to permit its application to high‐resistance, low‐mobility films. The conventional method requires knowledge of the acoustic loss caused by the mobile carriers; in high‐resistance films this loss becomes too small to be measured. We show that the required information may be derived from knowledge of the acoustic power and the device geometry. Our samples were amorphous hydrogenated Si and Si0.6Ge0.4 films on nonpiezoelectric substrates, separated by a convenient air gap (12.5 μm) from a LiNb03 slab carrying surface acoustic waves. One sample had 108 Ω/☒ and μ=0.08 cm2/V sec, another sample 1010 Ω/☒ and μ=0.5 cm2/V sec.
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72.50.+b Acoustoelectric effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
72.80.Ng Disordered solids

Picosecond nonequilibrium carrier transport in GaAs

C. V. Shank, R. L. Fork, B. I. Greene, F. K. Reinhart, and R. A. Logan

Appl. Phys. Lett. 38, 104 (1981); http://dx.doi.org/10.1063/1.92258 (2 pages) | Cited 60 times

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We report a new picosecond optical technique for observation of nonequilibrium carrier transport. An ’’overshoot’’ electron velocity of 4.4×107 cm/sec is observed at short times in GaAs under appropriate electric field conditions.
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72.20.Fr Low-field transport and mobility; piezoresistance

Alteration of Ni silicide formation by N implantation

L. Wieluński, D. M. Scott, M.‐A. Nicolet, and H. von Seefeld

Appl. Phys. Lett. 38, 106 (1981); http://dx.doi.org/10.1063/1.92259 (3 pages) | Cited 7 times

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The possibility of controlling the growth of nickel silicide by implanting N into thin Ni films evaporated on Si substrates has been studied using 4He backscattering spectrometry. The reaction between Ni and Si is completely halted below annealing temperatures of ∼375 °C by implanted doses of 5×1016 N/cm2. At higher annealing temperatures, localized intermixing takes place. For low doses ≲0.5×1016 N/cm2, the reaction between Ni and Si is that observed for unimplanted samples both in the phase formed (Ni2Si) and in rate of growth. For intermediate doses ∼0.9×1016 N/cm2, the first phase formed corresponds to NiSi, and the growth rate is greatly reduced. These results are explained in terms of a silicon nitride barrier to Ni diffusion forming at the Ni/Si interface.
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68.55.-a Thin film structure and morphology
82.20.Hf Product distribution
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

New method of magnetic flux compression by means of the propagation of shock‐induced metallic transition in semiconductors

Kunihito Nagayama

Appl. Phys. Lett. 38, 109 (1981); http://dx.doi.org/10.1063/1.92260 (2 pages) | Cited 13 times

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A new procedure of generating ultrahigh pulsed magnetic field was described. The method is based on the fact that semiconducting materials undergo shock‐induced metallic transition at very high pressures. An approximate numerical analysis using the magnetohydrodynamics equations was carried out for silicon with normal and low initial densities. It is shown that flux concentration may become efficient for low‐impedance materaials.
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07.55.-w Magnetic instruments and components
62.50.-p High-pressure effects in solids and liquids
71.30.+h Metal-insulator transitions and other electronic transitions
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