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15 Feb 1981

Volume 38, Issue 4, pp. 193-291

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Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser‐threshold‐current temperature sensitivity

T. Uji, K. Iwamoto, and R. Lang

Appl. Phys. Lett. 38, 193 (1981); http://dx.doi.org/10.1063/1.92317 (3 pages) | Cited 27 times

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Nonradiative recombination with the rate strongly dependent on the injected carrier density n as αn2–4 has been found to be the cause of the output saturation in 1.3‐μm InGaAsP/InP surface emitting double heterostructure light emitting diodes. It has been found that this nonradiative recombination is also responsible for the strong temperature sensitivity of InGaAsP/InP double heterostructure laser threshold current.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling

Optically detected photothermal imaging

J. C. Murphy and L. C. Aamodt

Appl. Phys. Lett. 38, 196 (1981); http://dx.doi.org/10.1063/1.92318 (3 pages) | Cited 36 times

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A method of photothermal imaging is described, which uses optical detection with no contact between specimen and detector.
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07.60.Pb Conventional optical microscopes
05.70.Ce Thermodynamic functions and equations of state
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Shock‐tube CO2 gas‐dynamic laser operating on the (0310)⇄(10°0) transition at 18.4 μm

A. A. Vedeneev, A. Yu. Volkov, A. I. Demin, E. M. Kudriavtsev, J. Stanco, J. Milewski, and M. Brunné

Appl. Phys. Lett. 38, 199 (1981); http://dx.doi.org/10.1063/1.92319 (3 pages) | Cited 1 time

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Laser action at 18.4 μm has been obtained between the (0310) and (1000) levels in a shock‐tube‐driven CO2/Ar gas‐dynamic laser. The pulse duration was equal to about 4 ms, giving the output power up to 2 W extracted from a 10‐cm3 volume cavity mounted within a nozzle of 60° divergence angle and 0.5‐mm throat height 67‐mm downstream of the nozzle throat.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.50.Lp Plasma production and heating by shock waves and compression
82.40.Fp Shock wave initiated reactions, high-pressure chemistry

Oscillation burst generation in transferred‐electron devices with picosecond optical pulses

T. F. Carruthers, J. F. Weller, H. F. Taylor, and T. G. Mills

Appl. Phys. Lett. 38, 202 (1981); http://dx.doi.org/10.1063/1.92320 (3 pages) | Cited 3 times

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Bursts of oscillations have been triggered in GaAs transferred‐electron devices by picosecond optical pulses focused onto the region between the gate and anode. The oscillation frequency was varied between 6.7 and 10.5 GHz by changing the position of the optical spot. The burst duration depended logarithmically upon the optical input power, indicating a decay of the optically excited electron‐hole plasma with a measured lifetime of 430 psec, and could be varied between 1.5 and 5.0 nsec.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Device characteristics of (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 38, 204 (1981); http://dx.doi.org/10.1063/1.92321 (4 pages) | Cited 13 times

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A study has been made on the device characteristics of multiquantum well (MQW) lasers grown by molecular beam epitaxy. These wafers have different numbers of wells and different well and barrier thicknesses. The results show that averaged threshold current densities Jth as low as the lowest Jth (800 A/cm2) obtained for standard double‐heterostructure lasers with approximately the same AlAs composition in the cladding layers were obtained in spite of the reduced optical confinement factor Γ and the increased number of interfaces. Significant beam width reduction in the direction perpendicular to the jucntion plane was obtained. Half‐power full‐width as narrow as 15° was measured for some MQW wafers. For some MQW wafers the lasers fabricated generally have a characteristic temperature T0≳215 °C in the temperature range of 10–130 °C. The present study also shows that the device characteristics of the MQW lasers depend quite significantly on the detailed designs of the multilayer structure that composes the active region.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electro‐wetting displays

G. Beni and S. Hackwood

Appl. Phys. Lett. 38, 207 (1981); http://dx.doi.org/10.1063/1.92322 (3 pages) | Cited 47 times

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We show that a novel effect, electro wetting, can be the basis of passive displays which (i) switch reversibly from transparent to white, (ii) have fast response time (<1.0 ms),and (iii) can be operated with low voltages (<1.0 V) and low power consumption (<1.0 mW/cm2). We derive the operating parameters and report experiments demonstrating the concept of electro‐wetting displays.
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85.60.Pg Display systems
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Possibility of lasing at the 1083‐nm He line in a He‐Hg mixture

H. Ninomiya

Appl. Phys. Lett. 38, 210 (1981); http://dx.doi.org/10.1063/1.92323 (2 pages)

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In a He‐Hg pulsed discharge, the temporal behavior of the population densities of He(2 3S) and He(2 3P) atoms has been studied experimentally using the Hook method. The possibility of the lasing at 1083 nm line (2 3S—2 3P) is discussed on the basis of the experimental fact that, when the partial pressure of Hg is adequate, the population inversion occurs transiently between these two states.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Chromium‐induced up conversion in GaP

B. Clerjaud, F. Gendron, and C. Porte

Appl. Phys. Lett. 38, 212 (1981); http://dx.doi.org/10.1063/1.92312 (3 pages) | Cited 11 times

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In gallium phosphide, chromium doping allows the excitation of donor‐acceptor type luminescence with light whose energy is smaller than the band gap and smaller than the emitted light energy. We discuss the behavior of that emission as a function of the excitation power together with electron paramagnetic resonance results. We conclude that the deep level involved is associated with Cr2+, located 1, 2 eV below the X conduction‐band minimum. The up‐conversion power efficiency of this sample is also reported.
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78.40.Fy Semiconductors
42.65.-k Nonlinear optics

Fast compact optical waveguide switch modulator

R. C. Alferness, N. P. Economou, and L. L. Buhl

Appl. Phys. Lett. 38, 214 (1981); http://dx.doi.org/10.1063/1.92313 (4 pages) | Cited 5 times

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We describe a very short (750 μm) laterally compact (1 μm electrode gap) optical directional coupler switch made with Ti‐diffused lithium niobate waveguides with a demonstrated switching time of 110 ps.
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42.79.Gn Optical waveguides and couplers
42.60.Fc Modulation, tuning, and mode locking

Low‐frequency intensity fluctuation in laser diodes with external optical feedback

Masahiko Fujiwara, Keiichi Kubota, and Roy Lang

Appl. Phys. Lett. 38, 217 (1981); http://dx.doi.org/10.1063/1.92314 (4 pages) | Cited 16 times

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Enhanced intensity fluctuations, in particular the low‐freqeuncy fluctuation (LFF) component, which appear in a semiconductor laser‐diode (LD) output with external optical feedback, can have seriously adverse effects in practical applications when they fall within the signal bandwidth. Experiments have been carried out to determine the mechanism of the LFF enhancement, and a simple relationship between its peak frequency f0 and the basic parameters characterizing an LD with an external reflector have been established. The resuts are in qualitative agreement with the prediction based on a compound cavity laser model.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Storage of ions from laser‐produced plasmas

R. D. Knight

Appl. Phys. Lett. 38, 221 (1981); http://dx.doi.org/10.1063/1.92315 (3 pages) | Cited 18 times

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A laser‐produced plasma has been shown to be an effective means of producing metal ions, which are subsequently stored in an ion trap. The output from a Nd:YAG laser is focused onto targets, including Be, C, Al, Fe, and Pb, at the edge of an electrostatic ion trap. Typically 2×108 ions are trapped with storage times greater than 100 msec. Only singly charged ions are observed. The ion trap used for this work is a novel electrostatic trap having a harmonic axial potential. Properties of the plasma are measured by using the trap as a Langmuir probe.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.58.-c Other confinement methods
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

Shock‐wave production and plasma motion in CO2‐laser‐irradiated targets

P. D. Goldstone, R. F. Benjamin, and R. B. Schultz

Appl. Phys. Lett. 38, 223 (1981); http://dx.doi.org/10.1063/1.92316 (3 pages) | Cited 15 times

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We use visible‐light, streaked shadowgraphy to make to first measurements of several transport and expansion phenomena in CO2‐laser‐irradiated foils. Measured velocities of the free‐surface motion, produced by the laser‐driven shock wave, at the foil’s rear surface yield shock pressures in reasonable agreement with theory. The velocity of plasma expansion from the absorption region is observed to change abruptly after ∼1.5 ns. We speculate that this effect is due to relaxation of the steepened plasma profile. Energy transport from the front to rear surface via the target’s edge, which complicated shock studies, is controllable with a simple shield.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
62.50.-p High-pressure effects in solids and liquids
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Generation of shock waves by hot electron explosions driven by a CO2 laser

N. H. Burnett, G. Josin, B. Ahlborn, and R. Evans

Appl. Phys. Lett. 38, 226 (1981); http://dx.doi.org/10.1063/1.92324 (3 pages) | Cited 10 times

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We observe shock waves with velocity 2.5×106 cm/sec generated by the interaction of a nanosecond CO2 laser at an intensity of 3×1014 W/cm2 with 12–40‐μm‐thick aluminum foils. It is proposed that these shock waves are not generated by thermal ablation but rather by hot electron heating and explosion of a layer of Al several microns thick adjacent to the target surface. Shock pressures produced by this process are comparable to the highest pressures yet observed by conventional laser driven thermal ablation.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.35.Tc Shock waves and discontinuities
52.25.Fi Transport properties

Negative ion losses in magnetically insulated vacuum gaps

J. P. VanDevender, R. W. Stinnett, and R. J. Anderson

Appl. Phys. Lett. 38, 229 (1981); http://dx.doi.org/10.1063/1.92325 (3 pages) | Cited 9 times

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Negative ion losses have been observed in a long, self‐magnetically insulated transmission line after the electrons are insulated. Time of flight spectra are consistent with H−, H2−, 02−, C2−, and heavier molecular ions with energies corresponding to the full anode‐cathode potential difference. The negative ion current density Ji is a sensitive function of the conditions under which the cathode plasma is produced.
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41.75.Fr Electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.80.Vp Discharge in vacuum

Prebreakdown phenomena between sphere‐sphere electrodes in transformer oil

Edward F. Kelley and Robert E. Hebner

Appl. Phys. Lett. 38, 231 (1981); http://dx.doi.org/10.1063/1.92326 (3 pages) | Cited 6 times

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Measurements have been made of the propagation velocities of both cathode and anode streamers in transformer oil using sphere‐sphere electrodes. Under the conditions of these experiments, the cathode streamer development was a three‐step process, while the anode streamer development was a two‐step process. The average propagation velocities for the three‐steps of the cathode process were 2.4×104, 1.5×105, and 3.9×106 cm/s. The two steps of the anode process propagated at average velocities of 3.8×105 and 4.4×106 cm/s.
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52.80.Wq Discharge in liquids and solids
77.22.Jp Dielectric breakdown and space-charge effects
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Pressure and impulse on an aluminium target from pulsed laser irradiation at reduced ambient pressure

D. Dufresne, Ph. Bournot, J. P. Caressa, G. Bosca, and J. David

Appl. Phys. Lett. 38, 234 (1981); http://dx.doi.org/10.1063/1.92327 (3 pages) | Cited 4 times

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An experimental investigation of the time‐dependent pressure induced on an aluminium target from a pulsed CO2 laser irradiation at reduced ambient density has been made. As the pressure of the air surrounding the target decreases from 760 to 0.5 Torr, the width of the pressure pulse on the target becomes narrower, and the amplitude of the pressure increases. A pressure as high as 1.7 kbar and a mechanical coupling of 20 dyn sec J are obtained.
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62.50.-p High-pressure effects in solids and liquids
79.20.Ds Laser-beam impact phenomena
52.40.Hf Plasma-material interactions; boundary layer effects
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Photon correlation spectroscopic analysis of a natural electret material: Carnauba wax

G. A. Barbosa, R. Russi, A. S. T. Pires, and O. N. Mesquita

Appl. Phys. Lett. 38, 236 (1981); http://dx.doi.org/10.1063/1.92328 (2 pages) | Cited 1 time

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For the first time, photon correlation spectroscopy is applied to the study of an electret material. We show that the average self‐diffusion parameter of Carnauba wax in liquid phase, from 85 to 170 °C can be written as D=D0+A exp[−ΔE/k(T−T0)], where D0=1.6×10−10 and A=20×10−10 cm2/sec, ΔE=82 cm−1 and T0=68 °C
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66.10.C- Diffusion and thermal diffusion
78.35.+c Brillouin and Rayleigh scattering; other light scattering
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

Low‐temperature ion beam mixing of Al‐Sb

J. Delafond, S. T. Picraux, and J. A. Knapp

Appl. Phys. Lett. 38, 237 (1981); http://dx.doi.org/10.1063/1.92329 (4 pages) | Cited 15 times

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The mixing of Sb layers on Al by 400‐keV Xe ions at 80 K has been investigated. A tail in the Sb concentration profile is observed to move into the Al substrate to the depth of the Xe range. The quantity of mixed Sb in the tail increases linearly with Xe fluence. No growth of layers corresponding to a binary compound is observed. However, the Sb concentration in the original layer drops continuously until the concentration reaches the first equilibrium compound phase, AlSb. The present results are believed to demonstrate pure collisional mixing of Sb into Al without the competing effects of enhanced diffusion since (i) vacancies are immobile in Al at 80 K and (ii) the observed rate of mixing, ≃2.5 Sb per Xe, is consistent with recent theoretical estimates of collisional mixing due to ion recoil and ion cascade events.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.75.-g Phase equilibria

Laser‐induced luminescence band in Ge‐doped (Al,Ga)As multilayer structures

H. H. Gilgen, R. P. Salathé, and Y. Rytz‐Froidevaux

Appl. Phys. Lett. 38, 241 (1981); http://dx.doi.org/10.1063/1.92311 (3 pages) | Cited 9 times

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A new luminescence band is observed in optically excited (Al, Ga)As multilayer structures that were previously subjected to intense laser irradiation. The band is shifted by 90 meV to a longer wavelength with respect to the band‐band recombination of regions not exposed to radiation. The laser power density necessary for processing is 0.55 MW/cm2 for times of ∼100 μsec. The processed region is located at the pn junction with a width of 0.7 and a depth of 0.15 μm.
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78.40.Fy Semiconductors
81.40.Gh Other heat and thermomechanical treatments

High‐purity, single‐crystal InP grown by synthesis solute diffusion

R. O. Engh, S. R. Peterson, J. P. Thorne, and P. E. Petersen

Appl. Phys. Lett. 38, 243 (1981); http://dx.doi.org/10.1063/1.92330 (3 pages) | Cited 2 times

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Single‐crystal InP was grown by the synthesis solute diffusion (SSD) technique. The measured etch pit density of ∼10 cm−2, mobility (77 K) of 50 200 cm2 V−1 s−1 and carrier concentration (77 K) of 2.3×1014 cm−3 demonstrate the feasibility of SSD for the growth of high‐quality bulk InP.
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81.10.Dn Growth from solutions
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Photoluminescence technique for the determination of minority‐carrier diffusion length in GaAs grown by molecular beam epitaxy

G. Duggan, G. B. Scott, C. T. Foxon, and J. J. Harris

Appl. Phys. Lett. 38, 246 (1981); http://dx.doi.org/10.1063/1.92331 (3 pages) | Cited 6 times

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Using the minority‐carrier diffusion length and surface and interface recombination velocities as adjustable parameters, we have fitted a theoretical expression to the observed photoluminescence response of stepped thickness layers of GaAs prepared by molecular beam epitaxy. The minority‐carrier diffusion lengths so extracted are in good agreement with those obtained by other techniques.
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72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors

Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing

T. J. Magee, L. J. Palkuti, R. Ormond, C. Leung, and S. Graham

Appl. Phys. Lett. 38, 248 (1981); http://dx.doi.org/10.1063/1.92332 (3 pages) | Cited 15 times

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Single‐crystal Si sheets (0.2 μm in thickness) of (100) orientation and of maximum dimensions, 100×10 000 μm, have been recrystallized by cw laser annealing of poly crystalline Si films deposited over parallel 3‐μm‐wide SiO2 bars adjacent to 3‐μm Si (100) substrate openings. The recrystallized films are free of cracks, mosaic structure, stacking faults, or excessive mass flow at the oxide edges. In a correlated series of experiments we have shown that the Si can be recrystallized over the SiO2 with only limited or relaxed requirements for vertical seeding from the substrate window.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.10.Fq Growth from melts; zone melting and refining
42.60.-v Laser optical systems: design and operation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Collection efficiency of low‐mobility solar cells

Joseph Reichman

Appl. Phys. Lett. 38, 251 (1981); http://dx.doi.org/10.1063/1.92333 (3 pages) | Cited 40 times

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An equation for the collection efficiency (i.e., internal quantum efficiency) is derived that can be used for Schottky barrier, metal‐insulator‐ semiconductor, or semiconductor‐electrolyte junction solar cells. It is obtained from an exact solution of the transport equation in the space‐charge region and includes the effects of photogenerated majority carriers. It is shown that these carriers can diffuse to the interface and thereby oppose the minority‐carrier photocurrent by recombination or emission. This effect is shown to be quite significant in reducing the collection efficiency when the majority‐carrier mobility is low and at short wavelengths where the absorption coefficient becomes large.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Formation of silicon nitride structures by direct electron beam writing

Brymer H. Chin and Gert Ehrlich

Appl. Phys. Lett. 38, 253 (1981); http://dx.doi.org/10.1063/1.92334 (3 pages) | Cited 14 times

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Localized deposits of silicon nitride are formed under ultrahigh vacuum conditions by electron bombardment of nitrogen molecularly bound on Si (100) at low temperatures (T⩽ 50 K). Auger spectra of the deposits reveal no impurities and have the same essential features as spectra from silicon nitride produced by conventional chemical vapor deposition.
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79.20.Kz Other electron-impact emission phenomena
79.20.Fv Electron impact: Auger emission
68.55.-a Thin film structure and morphology

Perfection of homoepitaxial layers grown on (001) InP substrates

S. Mahajan, V. G. Keramidas, A. K. Chin, W. A. Bonner, and A. A. Ballman

Appl. Phys. Lett. 38, 255 (1981); http://dx.doi.org/10.1063/1.92335 (4 pages) | Cited 8 times

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The perfection of homoepitaxial layers grown on highly S‐, Zn‐ and Sn‐doped InP substrates by liquid phase epitaxy has been evaluated by etch pitting and transmission cathodoluminescence. It is shown that high‐quality layers, which are macroscopically dislocation free over large areas, can be grown on the S‐doped substrates. The situation regarding the epitaxial layers deposited on the Zn‐doped substrates is complex. The transmission cathodoluminescence study reveals, in addition to dislocations, areas with poor luminescence within the epitaxial layers. Furthermore, the quality of thin layers (∼2 μm thick) grown on the Zn‐ and Sn‐doped substrates is better than that of the thick layers (∼10 μm).
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68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining
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