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15 Feb 1981

Volume 38, Issue 4, pp. 193-291

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Metal‐insulator semiconductor Schottky‐barrier solar cells fabricated on InP

K. Kamimura, T. Suzuki, and A. Kunioka

Appl. Phys. Lett. 38, 259 (1981); http://dx.doi.org/10.1063/1.92336 (3 pages) | Cited 20 times

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High‐efficiency Schottky‐barrier solar cells with a metal‐insulator semiconductor structure have been fabricated on p‐type InP. The open‐circuit voltage and the energy conversion efficiency can be increased by introducing a thin oxide layer between the metal and the semiconductor. The open‐circuit voltage and the energy conversion efficiency are 0.78 V and 14.5% under AM2 conditions.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Lifetime measurement in Hg0.7Cd0.3Te by population modulation

J. A. Mroczkowski, J. F. Shanley, M. B. Reine, P. LoVecchio, and D. L. Polla

Appl. Phys. Lett. 38, 261 (1981); http://dx.doi.org/10.1063/1.92337 (3 pages) | Cited 20 times

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A new contactless optical modulation technique for the determination of photogenerated carrier lifetimes in semiconductors is presented. The technique consists of measuring the modulation in the transmitted intensity of a dc probe beam (hω<Eg) due to a modulated pump beam (hω≳Eg). The fractional change in the probe beam transmission is proportional to the excess carrier lifetime. Data are presented for lifetimes of 0.1–4 μ sec measured by this technique in p‐type and near‐intrinsic Hg0.7Cd0.3Te samples at 300 K.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Reactive ion beam etching of InP with Cl2

M. A. Bösch, L. A. Coldren, and E. Good

Appl. Phys. Lett. 38, 264 (1981); http://dx.doi.org/10.1063/1.92338 (3 pages) | Cited 20 times

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Reactive ion beam etching of InP with chlorine gas under oblique angles of incidence is reported. This process offers the important advantage of edge profile control. The etch rate is strongly dependent upon the ion energy, manifesting a plateau approaching 0.2 μm/min for a chlorine beam of less than 1 keV. At normal incidence of the ion beam the walls are sloped outward by about 17°. A mesa‐type structure with straight, smooth vertical walls has been fabricated by spinning the substrate under oblique ion beam incidence.
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42.82.-m Integrated optics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Precisely controlled shallow p+ diffusions in GaAs

S. K. Ghandhi and R. J. Field

Appl. Phys. Lett. 38, 267 (1981); http://dx.doi.org/10.1063/1.92301 (3 pages) | Cited 12 times

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Precisely controlled shallow p+ diffusions have been made in GaAs using ZnO/SiO2 as a doped oxide source for zinc, and a layer of phosphosilicate glass as a cap. Diffusions were made in an open‐tube system with a nitrogen gas ambient, and exhibit a junction depth reproducibility of better than ±5%. The technique is shown to be relatively insensitive to all process parameters other than diffusion time and temperature, and to be comparable in convenience and ease to diffusion in silicon.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Kf Glasses (including metallic glasses)
85.30.-z Semiconductor devices
72.40.+w Photoconduction and photovoltaic effects

New technique for resolving charge injection across metal‐semiconductor interfaces

John H. Slowik

Appl. Phys. Lett. 38, 269 (1981); http://dx.doi.org/10.1063/1.92302 (3 pages) | Cited 3 times

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A new technique has been developed for resolving detailed characteristics of charge injection across metal‐semiconductor and other interfaces. This time‐resolved charge injection technique uses 0–3 kV pulses, switched at 8 ns, to probe injection barriers in short times compared to dielectric relaxation of the bulk semiconductor. Dark injection from Al contacts into UHV‐cleaved CdS is found to approach the theoretical maximum (trap‐free space‐charge‐limited current). Dark injection is reduced by orders of magnitude when monolayers or less of ambient contamination are present at the interface. Conventional steady‐state measurements are ineffective in these samples because of bulk trapping.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
06.60.Jn High-speed techniques (microsecond to femtosecond)

Chromium gettering in GaAs by oxygen implantation

P. N. Favennec, M. Gauneau, H. L’Haridon, B. Deveaud, C. A. Evans, and R. J. Blattner

Appl. Phys. Lett. 38, 271 (1981); http://dx.doi.org/10.1063/1.92303 (3 pages) | Cited 7 times

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Oxygen‐ion implantation has been performed in chromium‐doped GaAs substrates. Oxygen chromium profiles were measured by SIMS. Implanted oxygen profiles are observed for the first time. The chromium distribution, in annealed samples, shows an accumulation. This accumulation is shown to depend on the implanted ion and on the nature and concentration of the metallic impurity in the substrate. Thus one can no longer expect to analyze the contribution of any single impurity without taking into account other incorporated impurities.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscale

P. Rava, H. C. Gatos, and J. Lagowski

Appl. Phys. Lett. 38, 274 (1981); http://dx.doi.org/10.1063/1.92304 (3 pages) | Cited 16 times

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Concentration profiles of interstitial oxygen were obtained by scanning ir absorption in Si crystals and, upon thermal activation (heat treatment at 450 °C), oxygen donor profiles were determined with spreading resistance measurements on the identical locations of the oxygen profiles. In contrast to the accepted premise, it was found that the oxygen donor concentration is not consistently related to the oxygen concentration, and that in fact the oxygen donor distribution does not necessarily coincide with the oxygen distribution. Vacancy distribution and vacancy gettering defects are believed to be intimately related to oxygen donor activation.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra

Geminate recombination in a‐Si:H

J. Mort, A. Troup, M. Morgan, S. Grammatica, J. C. Knights, and R. Lujan

Appl. Phys. Lett. 38, 277 (1981); http://dx.doi.org/10.1063/1.92305 (3 pages) | Cited 19 times

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Combined xerographic measurements and a delayed‐collection field technique have been applied to a‐Si:H. to determine whether geminate recombination controls the photogeneration process in a‐Si:H. The delayed‐collection field method allows the photogeneration efficiency at low applied fields to be measured. The results show that, depending on sample preparation, the zero‐field quantum efficiency ranges from 0.44 to 0.55. The measured field dependence of the quantum efficiency give best fits to the Onsager theory with r0  ∼45 to 80 Å for Φ0=1.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Laser annealing of native oxides on GaAs

R. K. Ahrenkiel, G. Anderson, D. Dunlavy, C. Maggiore, R. B. Hammond, and S. Stotlar

Appl. Phys. Lett. 38, 279 (1981); http://dx.doi.org/10.1063/1.92306 (3 pages)

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Annealing of native oxides grown on GaAs has been performed using a pulsed KrF laser. This process allows the oxides to be heated to temperatures well above 500 °C without arsenic loss from the GaAs substrate. The physical, chemical, and electronic properties of the oxide are markedly changed by laser processing.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

11.5% solar conversion efficiency in the photocathodically protected p‐InP/V3+‐V2+‐HCI/C semiconductor liquid junction cell

Adam Heller, Barry Miller, and F. A. Thiel

Appl. Phys. Lett. 38, 282 (1981); http://dx.doi.org/10.1063/1.92307 (3 pages) | Cited 39 times

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Oxidation of the surface of p‐InP with alkaline peroxide and treatment with dilute potassium cyanide increase the efficiency of the p‐InP/V2+−V3+ ‐HCl/C cell to 11.5%. The open circuit voltage of the cell follows the redox potential of the solution over a 0.5 V range. The lack of voltage pinning is consistent with photoemission studies of Spicer et al., showing that adsorption of oxygen on p‐InP raises the surface fermi level from a position near the valence band maximum to noe near the conduction band minimum.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Mr Semiconductor-electrolyte contacts
82.47.-a Applied electrochemistry

Niobium nitride Josephson tunnel junctions with oxidized amorphous silicon barriers

F. Shinoki, A. Shoji, S. Kosaka, S. Takada, and H. Hayakawa

Appl. Phys. Lett. 38, 285 (1981); http://dx.doi.org/10.1063/1.92308 (2 pages) | Cited 12 times

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High‐quality NbN/NbN Josephson tunnel junctions have been fabricated by rf sputtering. Tunneling barriers are formed by oxidizing amorphous silicon films produced with rf glow discharge deposition. For patterning the base and counter electrode, sputtered ZnO films are employed as a resist mask. The juncitons are found to have large gaps (2ΔNbN) =4.4 mV), to have low leakage current, and to be quite stable for storage and thermal cyclings.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Electron suppression in a multicusp negative ion source

K. W. Ehlers and K. N. Leung

Appl. Phys. Lett. 38, 287 (1981); http://dx.doi.org/10.1063/1.92309 (3 pages) | Cited 13 times

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Three different techniques for reducing the background electron density at the exit region of a multicusp negative ion source are described.
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52.50.Dg Plasma sources
52.55.Jd Magnetic mirrors, gas dynamic traps
52.25.Fi Transport properties

Model for mobility fluctuation 1/f noise

R. P. Jindal and A. van der Ziel

Appl. Phys. Lett. 38, 290 (1981); http://dx.doi.org/10.1063/1.92310 (2 pages) | Cited 14 times

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Hooge’s mobility fluctuation 1/f noise is interpreted in terms of fluctuations in the free path length of the carriers. The model involves a well‐known distribution of time constants that gives the 1/f spectrum. Kleinpenning’s conjecture that Hooge’s original mobility fluctuation expression holds for individual energy intervals of the electrons is not vindicated. The free‐path‐length fluctuation is interpreted in terms of interactions of electrons with the slowly varying longitudinal phonon population of the sample, so that only the lattice mobility is noisy. Hence the model leaves the Hooge‐Vandamme extension of Hooge’s original expression intact.
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72.70.+m Noise processes and phenomena
72.20.-i Conductivity phenomena in semiconductors and insulators
85.30.-z Semiconductor devices
63.20.-e Phonons in crystal lattices
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