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1 Mar 1981

Volume 38, Issue 5, pp. 295-394

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Generation of picosecond pulses from a cavity‐dumped synchronously pumped dye laser

M. J. Wirth, M. J. Sanders, and A. C. Koskelo

Appl. Phys. Lett. 38, 295 (1981); http://dx.doi.org/10.1063/1.92363 (2 pages) | Cited 1 time

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Bandwidth‐limited pulses of 2.5 ps in duration are reported for a cavity‐dumped synchronously pumped dye laser when saturable absorber is mixed with the laser dye. The pulses are tunable over a 610–640‐nm range, and the energy per pulse is in the range of 4–8 nJ.
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42.60.By Design of specific laser systems
42.55.Mv Dye lasers

Kilowatt multiple‐path 3He‐Ar nuclear‐pumped laser

R. J. DeYoung

Appl. Phys. Lett. 38, 297 (1981); http://dx.doi.org/10.1063/1.92364 (2 pages) | Cited 13 times

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Nuclear lasing of 3He‐Ar at 2300‐Torr total pressure with a thermal neutron flux of 4.3 × 1016 n/cm2 sec has resulted in a lasing output power of 1012 W. A multiple‐path laser cavity was used with seven passes through the laser medium which was pumped by the 3He(n,p)3H nuclear reaction. The thermal neutron lasing threshold flux was 1 × 1016 n/cm2 sec. At 600‐Torr 3He‐(2%)Ar, the threshold flux was 4.7 × 1015 n/cm2 sec. This represents the highest‐power, largest‐volume nuclear laser to date.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
28.90.+i Other topics in nuclear engineering and nuclear power studies (restricted to new topics in section 28)

UV hologram recording with an excimer laser

J. H. Brannon and J. F. Asmus

Appl. Phys. Lett. 38, 299 (1981); http://dx.doi.org/10.1063/1.92365 (2 pages) | Cited 1 time

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Ultraviolet hologram production using 353‐nm radiation from an e‐beam‐pumped XeF laser is reported. Mode selection was accomplished via an unstable resonator. A description of the holographic optical configuration is detailed and the simplicity of the arrangement noted. Reconstruction was accomplished with a low‐power He‐Ne laser. Scene and reference optical path length differences of up to 15 cm produced no detectable change in hologram quality. Some advantages in using excimer lasers for UV holographic recording are presented.
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42.40.Kw Holographic interferometry; other holographic techniques
42.62.-b Laser applications
42.40.Ht Hologram recording and readout methods

Embedded epitaxial growth of low‐threshold GaInAsP/InP injection lasers

P. C. Chen, K. L. Yu, S. Margalit, and A. Yariv

Appl. Phys. Lett. 38, 301 (1981); http://dx.doi.org/10.1063/1.92366 (3 pages) | Cited 5 times

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Single‐growth liquid‐phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4‐mm‐wide active region.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology

Double‐heterojunction laser diodes with multiply segmented contacts

James K. Carney and Clifton G. Fonstad

Appl. Phys. Lett. 38, 303 (1981); http://dx.doi.org/10.1063/1.92367 (3 pages) | Cited 8 times

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Multiple segment stripe contact (MSSC) diode lasers, in which the pumping current density, and thus the gain or loss, can be varied and controlled along the length of the laser stripe, are reported. For different combinations and magnitudes of current density into the eight segments, self‐pulsing, optical switching, bistability, hysteresis, and extremely high external differential quantum efficiencies can each be achieved. By simultaneously monitoring the voltage on the individual segments, changes in the carrier concentration and thereby changes in the gain and loss as a function of optical density and position along the stripe have also been observed. The use of MSSC lasers in the study of basic laser diode properties as well as novel devices of interest in their own right is suggested.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Generation of picosecond pulses of amplified spontaneous emission by two‐photon excitation in GaAs

Wei‐Lou Cao, Aileen M. Vaucher, and Chi H. Lee

Appl. Phys. Lett. 38, 306 (1981); http://dx.doi.org/10.1063/1.92368 (3 pages) | Cited 3 times

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A strong and uniform picosecond amplified‐spontaneous‐emission (ASE) pulse train was produced by two‐photon excitation in GaAs without a resonant cavity. The frequency bandwidth and the power of the ASE were found to depend upon the pumping power density and the length of the GaAs crystal that was pumped.
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42.55.Px Semiconductor lasers; laser diodes

Picosecond optical pulse generation at gigahertz rates by direct modulation of a semiconductor laser

John AuYeung

Appl. Phys. Lett. 38, 308 (1981); http://dx.doi.org/10.1063/1.92351 (3 pages) | Cited 21 times

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We report the generation of picosecond pulses by the direct modulation of a buried heterostructure GaAlAs diode laser. Pulse width of 28 ps is achieved at a repetition frequency of 2.5 GHz. Pulse width dependence on the experimental parameters is described.
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42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes

A classical electron cyclotron quasioptical maser

P. Sprangle, J. L. Vomvoridis, and W. M. Manheimer

Appl. Phys. Lett. 38, 310 (1981); http://dx.doi.org/10.1063/1.92369 (4 pages) | Cited 29 times

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In this work a new classical electron cyclotron maser oscillator is proposed and analyzed. The configuration utilizes an open‐resonator cavity containing a gyrating electron beam, which translates along an external magnetic field directed transverse to the axis of symmetry of the resonator. The nonlinear interaction between the electrons and resonator fields have been analyzed, and an expression for the steady‐state efficiency is obtained. For a uniform, external magnetic field our example shows that total efficiencies in excess of 30% can be realized, while appropriately contouring the field increases the efficiency to ∼45%.
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52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Low‐loss GaAs optical waveguides formed by lateral epitaxial growth over oxide

F. J. Leonberger, C. O. Bozler, R. W. McClelland, and I. Melngailis

Appl. Phys. Lett. 38, 313 (1981); http://dx.doi.org/10.1063/1.92352 (3 pages) | Cited 5 times

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We report the successful demonstration of a new type of single‐mode semiconductor waveguide, an oxide‐confined optical waveguide, that has lower loss and should have a smaller allowable bend radius than previously reported structures. The waveguides are formed by a new technique of lateral epitaxial growth of single‐crystal GaAs over an SiO2 film. Rib waveguides formed on these epitaxial layers have SiO2 as the lower confining layer and thus have better confinement than comparable all‐semiconductor structures. Losses of only 2.3 dB/cm (0.54 cm−1) have been measured at 1.06 mm.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology

Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching

L. A. Coldren, B. I. Miller, K. Iga, and J. A. Rentschler

Appl. Phys. Lett. 38, 315 (1981); http://dx.doi.org/10.1063/1.92353 (3 pages) | Cited 48 times

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Narrow, high‐aspect‐ratio grooves formed by reactive ion etching (RIE) are shown to be useful as partially transmissive mirrors for coupled active laser‐detector, laser‐modulator, and laser‐etalon two‐section monolithic devices. Results emphasize control of the longitudinal mode spectrum by active etalon action.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
85.60.-q Optoelectronic devices

Possible observation of the ion‐resonance instability in a non‐neutral electron cloud

S. Eckhouse, A. Fisher, and N. Rostoker

Appl. Phys. Lett. 38, 318 (1981); http://dx.doi.org/10.1063/1.92354 (3 pages) | Cited 2 times

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Experimental observations which are consistent with the occurrence of the ion‐resonance instability in a non‐neutral electron cloud confined in a magnetic mirror are reported. The instability is observed on electronstatic probes exhibiting signals which correspond to a positive oscillating charge. The ion oscillation is along the axis of the mirror field.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Capillaritron: A new, versatile ion source

John F. Mahoney, Julius Perel, and A. Theodore Forrester

Appl. Phys. Lett. 38, 320 (1981); http://dx.doi.org/10.1063/1.92355 (3 pages) | Cited 11 times

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The Capillaritron is an ion source consisting of a very fine bore capillary and a concentric accelerating electrode. When a gas flows through the capillary and a potential difference of several kilovolts is maintained between the capillary and an accelerating electrode, current densities exceeding 100 A/cm2 with angular current densities greater than 6 mA/steradian are obtained from a source aperture only 2.5 × 10−3 cm in diameter. The source has been tested with hydrogen, helium, and argon and appears capable of operating with any gas. A tentative theory based on the existence of a plasma inside the capillary, which is sustained by a small flow of electrons to the capillary from the beam, and a relatively large current released from the walls by excited atoms, appears consistent with observations.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Corona discharge‐induced surface chemical effects on II‐VI compounds

M. Lichtensteiger and C. Webb

Appl. Phys. Lett. 38, 323 (1981); http://dx.doi.org/10.1063/1.92356 (3 pages) | Cited 3 times

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Negative corona charging of CdS and ZnSe leads to a significant change in their surface composition. Utilizing x‐ray photoelectron spectroscopy and Auger electron spectroscopy, it is found that the primary interaction occurs between oxygen and group‐VI surface atoms. In contrast to other oxidation penomena, no oxygen bonded to group‐II surface atoms is detected. The results demonstrate for the first time that the electronic processes involved in electrophotography are accompanied by significant and irreversible chemical reactions of the surface exposed to negative corona discharges.
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81.65.-b Surface treatments
52.80.Hc Glow; corona
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

Threshold conditions for laser‐initiated plasma shutters

S. J. Czuchlewski and J. F. Figueira

Appl. Phys. Lett. 38, 325 (1981); http://dx.doi.org/10.1063/1.92357 (3 pages) | Cited 7 times

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The characteristics of laser‐initiated plasma shutters used for retropulse isolation in high‐power CO2 laser‐fusion systems are discussed. Initiation of the plasma breakdown is shown to depend on the fluence that is incident on the edge of the iris which is employed in these shutters. A relatively simple model for the ignition process has been verified for a range of pulse durations (0.7–60 ns) and iris diameters (100–800 mm). This model provides practical design criteria for sizing plasma isolators for a variety of applications.
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42.62.-b Laser applications

Study of x‐ray preionized avalanche discharge XeCl laser at high gas pressures

Lin Shao‐Chi, Bao Zhi‐xiang, Gong Guang‐yuan, Huo Yun‐sheng, Shu Ju‐ping, Tang Shi‐qing, Wei Yun‐rong, and Zheng Cheng‐en

Appl. Phys. Lett. 38, 328 (1981); http://dx.doi.org/10.1063/1.92358 (3 pages) | Cited 15 times

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In an x‐ray preionized, transmission‐line‐driven avalanche‐discharge apparatus of approximately 70‐nsec electrical length and 0.19‐l active volume, we have obtained XeCl laser output pulse energy in excess of 1 J from a relatively lean HCl/Xe/Ne mixture. This corresponds to an output pulse energy density which is greater than 5 J/l. More significantly, the laser output and efficiency are found to increase linearly with the gas pressure up to at least 5 atm with no sign of saturation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges
78.60.Ps Chemiluminescence
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Effects of inert gas dilution of silane on plasma‐deposited a‐Si:H films

J. C. Knights, R. A. Lujan, M. P. Rosenblum, R. A. Street, D. K. Bieglesen, and J. A. Reimer

Appl. Phys. Lett. 38, 331 (1981); http://dx.doi.org/10.1063/1.92359 (3 pages) | Cited 94 times

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Electrical, optical, and structural characterization of hydrogenated amorphous silicon films plasma‐deposited from mixtures of SiH4 with different inert‐gas diluents reveals substantial differences in a number of properties. A general trend of increasing defect density with atomic weight of the inert gas is observed. Of specific interest to device applications is the observation that high deposition rates can be achieved concurrently with low defect densities when helium is used as a deluent.
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68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids
68.37.-d Microscopy of surfaces, interfaces, and thin films
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Brillouin scattering from GaS under hydrostatic pressure up to 17.5 GPa

A. Polian, J. M. Besson, M. Grimsditch, and H. Vogt

Appl. Phys. Lett. 38, 334 (1981); http://dx.doi.org/10.1063/1.92360 (3 pages) | Cited 7 times

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Brillouin scattering in GaS crystals had been measured under hydrostatic pressures up to 17.5 GPa. Frequency shifts of the Brillouin lines give the pressure dependence of the elastic constants C11 and C33, and the index birefringence. Exponents derived from Murnaghan’s equation of state are compared with a Lennard‐Jones description of interatomic forces in GaS.
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62.20.D- Elasticity
62.50.-p High-pressure effects in solids and liquids
78.35.+c Brillouin and Rayleigh scattering; other light scattering
64.30.-t Equations of state of specific substances

Raman diffusion profilometry:OH in vitreous SiO2

F. L. Galeener and J. C. Mikkelsen

Appl. Phys. Lett. 38, 336 (1981); http://dx.doi.org/10.1063/1.92361 (3 pages) | Cited 6 times

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Techniques are described for using Raman spectroscopy to measure the concentration profiles of impurities that have been diffused into transparent host media. Profiles are presented for the diffusion of water into fused silica. Spatial resolutions of 50 mm for concentrations of OH above 180 ppm (by weight) are demonstrated, and order of magnitude improvements over these values are confidently predicted.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
63.20.Pw Localized modes
63.50.-x Vibrational states in disordered systems
81.05.Kf Glasses (including metallic glasses)

Corrosion resistant alloys Mo‐Ru‐X (X = Fe, Co, and Ni)

R. L. Meng, S. Z. Huang, and C. W. Chu

Appl. Phys. Lett. 38, 339 (1981); http://dx.doi.org/10.1063/1.92362 (3 pages)

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We found that some Mo‐Ru‐X (X = Fe, Co, and Ni) alloys could be made with exceptional corrosion resistance and variable magnetic and mechanical strengths both in bulk and thin‐films forms. Crystal structure did not seem to play an important role in these unusual and useful properties.
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81.05.Bx Metals, semimetals, and alloys
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
75.30.Hx Magnetic impurity interactions

A technique for comparing the bulk and surface structure of defects in thin films using the scanning transmission electron microscope.

M. M. J. Treacy, W. Krakow, D. A. Smith, and G. Trafas

Appl. Phys. Lett. 38, 341 (1981); http://dx.doi.org/10.1063/1.92370 (3 pages) | Cited 7 times

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A technique is described which allows the scanning transmission electron microscope to be operated either in its usual mode to give a transmission image from a thin film, or with a tilted sample to give a low‐loss image of the surface. The low‐loss image obtained from one surface of a thin‐film gold sample is compared with the bright field image of the same area. Microtwins in this film display strong topographic contrast on the single surface studied. From this, it appears that the microtwins are formed by deformation, rather than as growth accidents during the preparation of the sample. It is found advantageous in the low‐loss mode to operate with a less steeply tilted sample than heretofore.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology

Electron spectroscopy of the diamond surface

Stephen V. Pepper

Appl. Phys. Lett. 38, 344 (1981); http://dx.doi.org/10.1063/1.92371 (3 pages) | Cited 43 times

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The diamond surface is studied by ionization loss spectroscopy and Auger electron spectroscopy. For surfaces heated to <900 °C, the band gap was found to be devoid of empty states in the absence of electron beam effects. The incident electron beam generates empty states in the band gap and loss of structure in the valence band for these surfaces. A cross section of 1.4×10−19 cm2 was obtained for this effect. For surfaces heated to ≳900 °C the spectra were identical to those from surfaces modified by the electron beam. The diamond surface undergoes a thermal conversion in its electronic structure at ∼900 °C.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.20.Fv Electron impact: Auger emission
79.20.Hx Electron impact: secondary emission

Effect of growth temperature on the photoluminescent spectra from Sn‐doped Ga1−xAlxAs grown by molecular beam epitaxy

V. Swaminathan and W. T. Tsang

Appl. Phys. Lett. 38, 347 (1981); http://dx.doi.org/10.1063/1.92372 (3 pages) | Cited 33 times

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We have investigated the photoluminescence properties of Sn‐doped Ga1−xAlxAs (x∼0.24–0.29) grown by molecular beam epitaxy as a function of growth temperature in the range 400–675 °C. The photoluminescence intensity of the broad band at 300 K and that of the edge emission bands at 5.5 K increases with increasing growth temperature. The 5.5‐K emission spectra from samples grown below 565 °C show several weak and broad emission bands well separated from the band edge, which are attributed to Sn‐related complexes. The density of these complexes decreases at growth temperatures above 565 °C resulting in drastic improvement in the optical quality of the wafers.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Borosilicate glass films for InP encapsulation

S. Singh, W. A. Bonner, I. Camlibel, W. H. Grodkiewicz, T. R. Kyle, G. Pasteur, L. G. VanUitert, and R. S. Williams

Appl. Phys. Lett. 38, 349 (1981); http://dx.doi.org/10.1063/1.92373 (4 pages) | Cited 2 times

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rf‐sputtered borosilicate glass films were evaluated for surface protection of InP. The films, which have a thermal expansion coefficient much closer to InP than SiO2 or Si3N4, were usable up to ∼750 °C without cracking or peeling, and were also found to be effective masks for diffusion of Zn up to 650 °C and InP background doping in the 1×1016/cm range. The films were also found to be stable with respect to leaching of glass components by boiling water. Sputtered borosilicate glass films thus offer advantages over the use of SiO2, Si3N4 or phosphosilicate glass for use as an encapsulant on InP.
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85.30.-z Semiconductor devices

Preparation of low‐resistivity n‐type ZnSe by organometallic chemical vapor deposition

W. Stutius

Appl. Phys. Lett. 38, 352 (1981); http://dx.doi.org/10.1063/1.92374 (3 pages) | Cited 17 times

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Low‐resistivity n‐type ZnSe with p<0.05 W cm and n≳1017 cm−3 has been grown epitaxially on (100) GaAs substrates by a low‐pressure low‐temperature organometallic chemical vapor deposition process. Triethylaluminum is used as a dopant. The as‐grown layers show a strong near‐band‐gap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other methods.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Donor‐acceptor pairs in GaP and GaAs involving the deep nickel acceptor

H. Ennen, U. Kaufmann, and J. Schneider

Appl. Phys. Lett. 38, 355 (1981); http://dx.doi.org/10.1063/1.92375 (3 pages) | Cited 30 times

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Seven new, sharply structured bands in the 2‐mm region have been observed in absorption and emission from n‐type GaP and GaAs diffused with nickel. Each of these bands is both Ni and donor type specific. They are assigned to intra d‐shell transitions of Ni acceptor‐shallow donor near‐neighbor associates, namely Ni‐S and Ni‐Ge in GaP and Ni‐S, Ni‐Se, Ni‐Te, Ni‐Si, and Ni‐Sn in GaAs. Uniaxial stress measurements, performed on the Ni‐S band in GaP, demonstrate that the corresponding center has trigonal symmetry, thus confirming that a nearest‐neighbor pair is involved. This is the first definite optical identification of a donor‐acceptor pair containing a deep 3d‐metal acceptor. It is concluded that Ni has a strong tendency to form such pairs, especially with sulphur.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
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