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1 Mar 1981

Volume 38, Issue 5, pp. 295-394

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Influence of carrier diffusion on melt‐front penetration during pulsed‐laser annealing

R. F. Wood

Appl. Phys. Lett. 38, 357 (1981); http://dx.doi.org/10.1063/1.92376 (3 pages) | Cited 4 times

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It is shown that although carrier diffusion may increase the effective depth for energy absorption by the lattice during pulsed‐laser annealing of semiconductors, it is unlikely that this increase will significantly alter the conclusions of the melting model of laser annealing.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro‐optic and microwave devices

A. Y. Cho and K. Y. Cheng

Appl. Phys. Lett. 38, 360 (1981); http://dx.doi.org/10.1063/1.92377 (3 pages) | Cited 17 times

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Integrated optics and integrated microwave circuits require extremely uniform epitaxial layer thicknesses, composition profiles, and doping profiles. With a sample rotating mechanism, molecular beam epitaxy can for the first time prepare GaAs and AlxGa1−xAs layers with thickness variation of less than 1% over a lateral dimension of 5 cm. The variation of AlAs mole fraction of the Al0.3Ga0.7As over a 10‐cm2 area was less than 0.4%. The variation of the ’’pinch‐off’’ voltage for a field effect transistor structure was less than 1.4% over a 10‐cm2 wafer. These results represent the most uniform epitaxial layers ever prepared with any crystal growth technology.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors
81.10.Bk Growth from vapor

Photovoltaic detectors in SnS produced by Sb+ ion implantation

D. Trbojevic, P. M. Nikolic, B. Perovic, and V. Cvekic

Appl. Phys. Lett. 38, 362 (1981); http://dx.doi.org/10.1063/1.92378 (3 pages) | Cited 8 times

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Np junction photovoltaic detectors in the p‐type single‐crystal SnS have been produced by Sb+ ion implantation. Current‐voltage and capacitance‐voltage characteristics have been measured at 77 and 295 K. At 77 K, diodes had zero‐bias resistance area products of 1.5×103 W cm2. The spectral response has been measured at 77 and 295 K. At 295 K, the peak responsivity was at a wavelength of 0.76 mm. At 77 K, the peak detectivity, which occurred at 0.62 mm, was 1.3×1011 cm Hz1/2 W−1 with a peak quantum efficiency of 44%.
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72.40.+w Photoconduction and photovoltaic effects
61.72.U- Doping and impurity implantation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators

John C. C. Fan, M. W. Geis, and Bor‐Yeu Tsaur

Appl. Phys. Lett. 38, 365 (1981); http://dx.doi.org/10.1063/1.92339 (3 pages) | Cited 76 times

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By using a new method, which we have named the LESS technique (lateral epitaxy by seeded solidification), single‐crystal Si films have been grown over insulating layers on single‐crystal Si substrates. An amorphous or polycrystalline Si film is deposited on the insulating layer, in which narrow stripes have been opened to expose the substrate. By using two carbon strip heaters, one of which is movable, the Si film is melted and frozen in such a manner that solidification begins within the stripe openings, where it is seeded by the substrate. The resulting single‐crystal regions in turn seed lateral single‐crystal growth over the adjacent insulating layer. Continuous single‐crystal Si films have been obtained over SiO2 layers with openings spaced 50 or 500 mm apart, and single‐crystal growth extending as far as 4 mm over Si3N4 has been observed.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Fq Growth from melts; zone melting and refining
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Gettering of crystalline defects in Si by bending

R. Sawada, T. Karaki, and J. Watanabe

Appl. Phys. Lett. 38, 368 (1981); http://dx.doi.org/10.1063/1.92340 (2 pages) | Cited 1 time

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Suppression of oxidation‐induced stacking faults and microdefects in a Si wafer, subjected to bending during thermal oxidation, was studied. Straight dislocations were introduced only at the neutral plane in Si bulk, during bending in a furnace and retained as sinks through all subsequent high‐temperature processings, thereby continuing to suppress the formation of oxidation‐induced stacking faults and microdefects. Gettering while applying bending stress to the wafer is described, including the formation mechanism for dislocations at the neutral region.
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81.40.Lm Deformation, plasticity, and creep
61.72.Nn Stacking faults and other planar or extended defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.20.F- Deformation and plasticity

Plasma‐enhanced thermal nitridation of silicon

Takashi Ito, Ichiro Kato, Takao Nozaki, Tetsuo Nakamura, and Hajime Ishikawa

Appl. Phys. Lett. 38, 370 (1981); http://dx.doi.org/10.1063/1.92341 (3 pages) | Cited 32 times

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A new procedure for plasma‐enhanced thermal nitridation of silicon is reported. Highly purified ammonia plasma is generated in a quartz tube by radio‐frequency power heating induction‐coupled and SiC‐coated carbon susceptors. This system requires no additional electrode in the reaction environment. At a substrate temperature of 1050 °C, thermal silicon nitride films with a thickness above 100 Å are grown for 150 min in background pressures ranging from 10−1 to 10 Torr. The films have a refractive index of 1.90, oxygen contamination of less than 10%, and an etching rate two orders of magnitude smaller than that of a thermal SiO2 film in a solution of NH4F:HF = 7:1.
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68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films

Light‐flash induced metallic silicides from titanium films on silicon

Juh Tzeng Lue, Yuen Chung Liu, and Wei Jiun Shen

Appl. Phys. Lett. 38, 372 (1981); http://dx.doi.org/10.1063/1.92342 (3 pages) | Cited 7 times

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Reaction of thin titanium films on silicon has been observed in forming polyphase silicides by flash irradiations with full width at half‐maximum of 100 ms. Ion back scattering and optical micrographic studies show that the metallization occurs only when the temperature of the metal surface reaches the melting point. The experimental threshold irradiation energy density for the metal surface to reach the melting point is 17.6 J/cm2, which is close to the theoretical value of 20.4 J/cm2, based on the strong‐thermal‐diffusion‐limit approach.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Damage and reordering of ion‐implanted layers of InP

E. F. Kennedy

Appl. Phys. Lett. 38, 375 (1981); http://dx.doi.org/10.1063/1.92343 (3 pages) | Cited 29 times

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Si ion‐implantation damage in InP was studied by channeling measurements with 1‐MeV4 He ions. 200‐keV Si ions were implanted at fluences ranging from 1013 to 5×1014/cm2. A fluence of about 1014/cm2 was sufficient to produce an amorphous layer. Epitaxial annealing of amorphous layers takes place at temperatures below 250°C but leaves a high level of residual damage. Annealing at 450°C removes most of the lattice damage. Some annealing of lower fluence damage takes place at room temperature. Most lattice damage can be avoided by implanting with the substrate at an elevated temeperature (∼180°C).
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68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Observation of the amorphous‐to‐crystalline transition in silicon by Raman scattering

T. Kamiya, M. Kishi, A. Ushirokawa, and T. Katoda

Appl. Phys. Lett. 38, 377 (1981); http://dx.doi.org/10.1063/1.92344 (3 pages) | Cited 15 times

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Raman scattering, electron diffraction, and dark‐conductivity measurements have been made on so‐called a‐Si films deposited at various rf powers by a glow‐discharge technique. These measurements show that an abrupt transition between amorphous and polycrystalline states occurred between 350 and 370 rf voltages and films deposited at high rf voltages are polycrystalline. Dark conductivity of the silicon films changed largely with the amorphous‐to‐crystalline transition. It is also observed that some polycrystallized silicon films exhibited new peaks between 505 and 513 cm−1 in the Raman spectra.
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64.60.-i General studies of phase transitions
61.43.Fs Glasses
61.43.-j Disordered solids
78.30.Hv Other nonmetallic inorganics

Quantum noise theory for the dc SQUID

Roger H. Koch, D. J. Van Harlingen, and John Clarke

Appl. Phys. Lett. 38, 380 (1981); http://dx.doi.org/10.1063/1.92345 (3 pages) | Cited 46 times

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See Also: Erratum

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The noise temperature of a dc superconducting quantum interference device (SQUID) coupled to a tuned input circuit is computed using the complete quantum expression for the equilibrium noise in the shunt resistance of each junction. At T = 0, where the noise reduces to zero‐point fluctuations, the noise temperature for an optimized system is hn/kB ln2, where n is the signal frequency. The computation is extended to nonzero temperatures, and it is shown that a SQUID operated at 1K can approach the quantum limit.
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74.50.+r Tunneling phenomena; Josephson effects

Formation of hot spots in a superconductor observed by low‐temperature scanning electron microscopy

R. Eichele, H. Seifert, and R. P. Huebener

Appl. Phys. Lett. 38, 383 (1981); http://dx.doi.org/10.1063/1.92346 (2 pages) | Cited 16 times

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Low‐temperature scanning electron microscopy can be used for the direct observation of hot spots in a superconductor. Experiments performed at 2.10 K with tim films demonstrating the method are reported.
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74.25.Bt Thermodynamic properties
74.25.Sv Critical currents
74.90.+n Other topics in superconductivity (restricted to new topics in section 74)

Dynamics of laser‐induced vaporization for ultrafast deposition of amorphous silicon films

M. Hanabusa, M. Suzuki, and S. Nishigaki

Appl. Phys. Lett. 38, 385 (1981); http://dx.doi.org/10.1063/1.92347 (3 pages) | Cited 36 times

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Atomic vapor produced by a frequency‐doubled, pulsed Nd:YAG laser with its beam focused on a silicon plate has been used to deposit amorphous silicon films on substrate at room temperature. Time‐resolved measurements on the emission lines from vaporized Si show that the laser‐irradiated surface is kept at temperatures high enough to maintain a significant amount of vaporization for approximately 40 ns after the 7‐ns laser pulse. Since intense pulsed atomic beams are used, the silicon films grow at high speed in excess of 106 Å/s.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.60.By Design of specific laser systems
07.60.Rd Visible and ultraviolet spectrometers

X‐ray photoemission studies of superficially oxidized cesium antimonide photoemitters

C. W. Bates, Th. M. van Atekum, G. K. Wertheim, D. N. E. Buchanan, and K. E. Clements

Appl. Phys. Lett. 38, 387 (1981); http://dx.doi.org/10.1063/1.92348 (3 pages) | Cited 4 times

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Superficially oxidized cesium antimonide photoemitting surfaces prepared in ultrahigh vacuum were studied by x‐ray photoelectron spectroscopy. Oxidation of Cs3Sb to produce a surface with enhanced photosensitivity converts part of the antimony to elemental antimony and part of the cesium to cesium suboxide. The latter is identified on the basis of an O1 s peak at 531.3 eV, characteristic of Cs11O3. The production of Cs2O is not ruled out in this process since its signature at 527.5 eV is masked by an antimony shake‐up peak at 527 eV.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.65.-b Surface treatments

Oxygen sensing by electrochemical pumping

Robert E. Hetrick, W. A. Fate, and W. C. Vassell

Appl. Phys. Lett. 38, 390 (1981); http://dx.doi.org/10.1063/1.92349 (3 pages) | Cited 8 times

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An oxygen pumping structure using ZrO2 electrochemical cells is described for measuring the percentage of O2 in a high‐temperature gaseous environment. The device output is linearly proportional to the O2 percentage, has a weak dependence on temperature, and does not require a reference atmosphere.
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82.80.Fk Electrochemical methods
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

Initial observations of optical injection locking of GaAs metal semiconductor field effect transistor oscillators

A. A. Salles and J. R. Forrest

Appl. Phys. Lett. 38, 392 (1981); http://dx.doi.org/10.1063/1.92350 (3 pages) | Cited 14 times

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An experiment is described in which the output of a GaAlAs laser, modulated at 2.345 GHz, was used to optically injection lock a GaAs metal semiconductor field effect transistor oscillator. A substantial reduction of the FM noise of the field effect transistor oscillator, associated with locking to the more stable modulation signal applied to the laser, was obtained. The locking range obtained was 5 MHz, but possibilities for considerably increasing this are suggested.
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84.40.Lj Microwave integrated electronics
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