APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Apr 1981

Volume 38, Issue 7, pp. 479-581

Page 1 of 2 Pages Next Page | Jump to Page

Large‐Stokes‐shift stimulated four‐photon mixing in optical fibers

Chinlon Lin and M. A. Bösch

Appl. Phys. Lett. 38, 479 (1981); http://dx.doi.org/10.1063/1.92424 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
We report the first observation of large‐freguency‐shift (2000 to over 4000 cm−1) phase‐matched stimulated four‐photon mixing in low‐mode‐number silica fibers and discuss the use of this process for efficient frequency conversion in the visible, the near IR, and the near UV region of the spectrum.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.30.-j Infrared and Raman spectra
42.81.-i Fiber optics

Photo‐optical switching devices by amorphous As2S3 waveguides

Keiji Tanaka and Akira Odajima

Appl. Phys. Lett. 38, 481 (1981); http://dx.doi.org/10.1063/1.92425 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A novel optical device based on a ’’dynamical refractive‐index change’’ in an amorphous As2S3 film is constructed. In this device coupling of a red light beam into the thin‐film waveguide with a prism coupler is controlled by illuminating blue light. A switching time of about 10 s and an on/off ratio as high as 6/1 have been achieved. Further, this device can be operated as a photo‐optical switch having a storage function by changing the intensity of the light beams.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
75.20.Ck Nonmetals
42.79.Gn Optical waveguides and couplers
78.20.-e Optical properties of bulk materials and thin films

Deposited silica waveguide for intergrated optical circuits

Tatsuo Izawa, Hidefumi Mori, Yasuji Murakami, and Nobuo Shimizu

Appl. Phys. Lett. 38, 483 (1981); http://dx.doi.org/10.1063/1.92426 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Embedded single and multimode waveguides on fused quartz substrates have been fabricated by high‐speed silica deposition and accurate reactive sputter etching by a C2F6 gas plasma. These waveguides have rectangular cross sections with an aspect ratio close to unity. Total waveguide loss was approximately 5 dB/cm, and absorption loss measured by laser calorimetry at 637‐nm wavelength was less than 0.1 dB/cm.
Show PACS
42.79.Gn Optical waveguides and couplers
42.70.Ce Glasses, quartz
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Visible‐light spectroscopy by photothermal radiometry using an incoherent source

Per‐Erik Nordal and Svein Otto Kanstad

Appl. Phys. Lett. 38, 486 (1981); http://dx.doi.org/10.1063/1.92427 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
Photothermal radiometry (PTR) is shown to yield optical absorption spectra in the visible region of untreated and strongly scattering material, using Nd2O3 powder, blood, and a green leaf as test samples. A conventional high pressure Xe lamp/monochromator combination was employed for illumination at power levels below 1 mW, with a PbSnTe infrared detector for recording the thermal reradiation. Calculated PTR signals and signal‐to‐noise ratios are found to compare well with those observed.
Show PACS
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
44.40.+a Thermal radiation
05.70.Ce Thermodynamic functions and equations of state

Gain and transient absorption profiles for the iodine monofluoride 490‐nm and iodine monochloride 430‐nm bands under discharge excitation

M. L. Dlabal and J. G. Eden

Appl. Phys. Lett. 38, 489 (1981); http://dx.doi.org/10.1063/1.92428 (3 pages)

Full Text: | Download PDF

Show Abstract
The optical gain and transient absorption spectra for the IF 490‐nm and ICl 430‐nm bands have been measured in discharge‐excited He, CF3I and NF3 or CCl4 gas mixtures using a flashlamp–‐pumped, tunable dye laser. For the IF blue‐green band, gain in excess of 1.0% cm−1 was observed over the entire 479–498‐nm wavelength interval. Peak optical gain coefficients of ∼3.0% cm−1 and 1.3% cm−1 were observed for IF at 490.7 nm and ICl at 431.3 nm, respectively. For both molecules, strong absorption in the vicinity of the wavelength of maximum gain was identified as being due to the He (2p1P1) excited species. The addition of Ne or Ar to the gas mixture was found to substantially reduce the He (1P1) density, thereby improving the IF small‐signal gain‐to‐absorption ratio as well as the temporal width of the gain pulse.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Dy Low-field and Townsend discharges
52.80.-s Electric discharges
33.20.Kf Visible spectra

Bistable reflectivity of phase‐conjugated signal through intracavity degenerate four‐wave mixing

G.P. Agrawal, C. Flytzanis, R. Frey, and F. Pradère

Appl. Phys. Lett. 38, 492 (1981); http://dx.doi.org/10.1063/1.92429 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Through intracavity degenerate four‐wave interaction the reflectivity of the phase‐conjugated signal is shown to exhibit bistability and hysteresis when the driving pump field is varied in a continuous matter. The nonlinear medium inside the Fabry‐Perot cavity may be in one‐ or two‐photon resonance with the pump. We suggest suitable materials and discuss possible applications of the bistable response of the reflectivity.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Emission pulse delay in fiber laser plate and its application in optical logic operation

Atsuya Seko and Kazuyuki Murakami

Appl. Phys. Lett. 38, 494 (1981); http://dx.doi.org/10.1063/1.92430 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We originally propose and demonstrate optical parallel logic operations such as level slicing and the NOT and Exclusive OR (EXOR) operations using emission‐pulse time delay in a fiber laser plate and gating technique. These operations are essential for the optical digitial computations.
Show PACS
42.30.Va Image forming and processing
42.65.-k Nonlinear optics
42.55.Rz Doped-insulator lasers and other solid state lasers
89.20.Ff Computer science and technology

Low‐(Delta)n‐twisted nematic cell with improved optical properties

L. Pohl, G. Weber, R. Eidenschink, G. Baur, and W. Fehrenbach

Appl. Phys. Lett. 38, 497 (1981); http://dx.doi.org/10.1063/1.92421 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
It is demonstrated by model calculations and experimental results, that the range of viewing angles of a twisted nematic (TN) display can be considerably improved by using a liquid‐crystal material with a low refractive index anisotropy Dn<0.1.
Show PACS
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.25.Lc Birefringence

Time‐resolved optical transmission of pulsed laser‐irradiated silicon

M. C. Lee, H. W. Lo, A. Aydinli, and A. Compaan

Appl. Phys. Lett. 38, 499 (1981); http://dx.doi.org/10.1063/1.92422 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
The time‐resolved optical transmission of silicon has been observed at l = 1.15 mm during irradiation by an 8‐nsec pulsed laser at 485 nm with several energy densities in the range of 0.25 to 1.2 J/cm2. The transmission exhibits a sudden brief drop consistent with the rise and fall of the reflectivity enhancement. However, the transmission does not exhibit the strong absorption expected of molten silicon with a skin depth of ∼100 Å.
Show PACS
79.20.Ds Laser-beam impact phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
82.20.Rp State to state energy transfer

cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang and R. L. Hartman

Appl. Phys. Lett. 38, 502 (1981); http://dx.doi.org/10.1063/1.92423 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Proton‐bombarded stripe‐geometry (12×380 mm) lasers have been fabricated from multiquantum‐well (MQW) heterostructure wafers grown by molecular beam epitaxy (MBE). cw current thresholds as low as 76 mA were obtained in spite of the reduced optical confinement factor G in these lasers. Such values are comparable with the lowest values obtained from similar stripe‐geometry proton‐bombarded double‐heterostructure (DH) lasers. There also appears to be an improvement in the linearity and ’’tracking’’ of the output powers from the end mirrors in these MQW lasers over DH lasers using the same proton‐irradiated stripe‐geometry for current injection. Such improvements are results of a better lateral mode stabilization with injection currents. Significant beam width reduction in the direction perpendicular to the junction plane was obtained. The half‐power full‐width q⊥ as narrow as 25° was obtained. For the stripe‐geometry lasers fabricated from some MQW wafers, the characteristic temperature T0 in the current threshold‐temperature dependence can be as high as 293 °C in the temperature range of 10–70 °C.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of mode coupling on optical bistability in a bidirectional ring cavity

Govind P. Agrawal

Appl. Phys. Lett. 38, 505 (1981); http://dx.doi.org/10.1063/1.92431 (3 pages) | Cited 5 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
In a ring cavity the counter‐propagating modes are coupled through a homogeneously broadened atomic medium. The mode coupling is shown to introduce novel features in the transmission characteristics of two simultaneous bistable switches. We suggest suitable materials and discuss possible applications of the predicted effect.
Show PACS
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Turnable cw bulk semiconductor platelet laser

C. B. Roxlo, D. Bebelaar, and M. M. Salour

Appl. Phys. Lett. 38, 507 (1981); http://dx.doi.org/10.1063/1.92432 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We report the first tunable laser action of a platelet semiconductor in an external cavity. We have achieved cw output powers of up to 9 mW from a CdS platelet optically pumped by an Ar+ laser at 476 nm. The energy conversion efficiency is 10% into the TEM00 mode. Tunability of the laser output was demonstrated from 495 to 501 nm using an intracavity prism with the crystal kept at a temperature of 95 K. Additional tuning to 504 nm was achieved by varying the temperature to 140 K.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Elimination of out‐diffused surface guiding in titanium‐diffused LiNbO3

J. L. Jackel, V. Ramaswamy, and S. P. Lyman

Appl. Phys. Lett. 38, 509 (1981); http://dx.doi.org/10.1063/1.92433 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
We describe a means of eliminating undesired surface guiding in titanium‐diffused strip waveguides on LiNbO3. Surface guiding for light of the extraordinary polarization, normally produced when the crystal is diffused in dry argon or oxygen, can be eliminated entirely by adding water vapor to the diffusion gases. Infrared absorption measurements show that hydrogen enters crystals diffused in a wet atmosphere. Although the mechanism for the prevention of surface guiding is not fully understood, we suggest that the presence of excess hydrogen reduces lithium mobility.
Show PACS
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
81.40.Tv Optical and dielectric properties related to treatment conditions
66.30.H- Self-diffusion and ionic conduction in nonmetals

Fundamental line broadening of single‐mode (GaAl)As diode lasers

Mark W. Fleming and Aram Mooradian

Appl. Phys. Lett. 38, 511 (1981); http://dx.doi.org/10.1063/1.92434 (3 pages) | Cited 54 times

Full Text: | Download PDF

Show Abstract
The spectral width of (GaAl)As cw single‐mode diode lasers varied linearly with reciprocal output power at 300 K with a slope 50 times greater than that predicted by the Schawlow‐Townes expression without partial inversion. While the spectral narrowing observed at 77 K for constant mode power is consistent with the predicted temperature dependence of the partial inversion contribution, the magnitude of the broadening can not completely be attributed to partial inversion.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

Picosecond injection mode‐locking of the XeCl laser

G. Reksten, T. Varghese, and D. J. Bradley

Appl. Phys. Lett. 38, 513 (1981); http://dx.doi.org/10.1063/1.92435 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Ultrashort pulse generation has been achieved in a UV‐preionized transverse discharge XeCl laser by injection mode‐locking using the second harmonic of a passively mode‐locked Rh 6G dye laser tuned to the XeCl gain bandwidth. Temporal measurements using a Photochron II streak camera showed pulse durations ∼7 ps with single‐pulse peak power of ∼150 MW.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Acoustic microscopy of curved surfaces

R. D. Weglein

Appl. Phys. Lett. 38, 516 (1981); http://dx.doi.org/10.1063/1.92436 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
To date, imaging and metrology in the acoustic microscope have been performed exclusively on planar specimens. While imaging is accomplished by raster scanning in the plane transverse to the axis of the acoustic beam, metrology is practiced by variation of the specimen‐lens separation along the beam axis. This operation yields an acoutic material signature at a single location on the specimen plane. The two modes of operation are in effect simultaneously employed when a nonplanar surface of known curvature is scanned. The resulting images reveal concentric rings with radial periodic brightness variation if the surface is spherical in shape. The technique is demonstrated with stainless‐steel bearing balls of the type used in precision gyros. The application of this technique to the diagnostic inspection and analysis of both bearing balls and raceways are discussed. It is suggested that the obtained images represent a two‐dimensional map of elastic properties of the bearing surface regions.
Show PACS
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.20.Qp Friction, tribology, and hardness

Expansion of a cold ion cloud

Darryl D. Holm, Stevens F. Johnson, and Karl E. Lonngren

Appl. Phys. Lett. 38, 519 (1981); http://dx.doi.org/10.1063/1.92420 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
For a class of initial conditions, the Cauchy problem is studied for electrostatic fluid equations that describe expansion of a cloud of ions in one dimension. The fluid motion which results is a type of free streaming of charged particles in a self‐consistent electrostatic field. The exact solution obtained in planar geometry is compared with self‐similar solutions and with previous investigations.
Show PACS
52.25.Fi Transport properties
52.58.-c Other confinement methods

A laser‐initiated, gas‐embedded Z pinch: Experiment and computation

L. A. Jones, K. H. Finken, A. Dangor, E. Källne, S. Singer, I. R. Lindemuth, J. H. Brownell, and T. A. Oliphant

Appl. Phys. Lett. 38, 522 (1981); http://dx.doi.org/10.1063/1.92437 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Measurements done on a new plasma device, a laser initiated, gas‐embedded Z pinch, are compared with magnetohydro dynamics(MHD) calculations. The measurements, which include two‐foil x‐ray absorption, absolute continuum emission, and schlieren shadowgraphy, are in good agreement with predictions made by a two‐dimensional MHD calculation, which indicates that the peak electron temperature in the plasma is 200 eV and the peak electron density is 1×1020 cm−3.
Show PACS
52.55.Ez Theta pinch
52.25.Kn Thermodynamics of plasmas
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Gj Plasma heating by particle beams

Surface compositional modifications during O+2 bombardment of binary alloys

Ming L. Yu and Wilhad Reuter

Appl. Phys. Lett. 38, 525 (1981); http://dx.doi.org/10.1063/1.92438 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Surface compositional modifications of binary alloys during 15‐keV O+2 bombardment under 45° incidence were studied using Auger electron spectroscopy under ultrahigh vacuum conditions. For A1‐Ni, Cr‐Ni, Fe‐Ni, and Pd‐Ni alloys, the reactive preferential sputtering by O+2 causes a surface enrichment of the alloy component which has the smaller metal‐oxygen bond energy per metal atom. For Cu‐Ni and Ag‐Pd alloys, where oxidation by the O+2 beam was slight, the surface compositions after O+2 bombardment were qualitatively similar to those caused by nonreactive preferential sputtering with Ar+.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Multiple layer spalling in single‐crystal Al during He ion implantation

J. Greggi, W. J. Choyke, C. F. Tzeng, C. L. Chamberlain, N. J. Doyle, and D. M. Matuza

Appl. Phys. Lett. 38, 528 (1981); http://dx.doi.org/10.1063/1.92439 (3 pages)

Full Text: | Download PDF

Show Abstract
Al single crystals were implanted with 150‐keV He+ ions at room temperature to fluences high enough to produce several layers of exfoliation. Each exfoliated layer occurs by spalling of the entire bombarded crystal surface, and step height measurements show that the spalling occurs at a depth less than the calculated projected range of the He ions. Preliminary evidence from aligned backscattered (channeling) spectra of exfoliated crystals indicates that the He remaining in the crystal after spalling is in the form of bubbles.
Show PACS
61.72.U- Doping and impurity implantation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects

Photoplastic effect in anthracene crystals

Kenichi Kojima

Appl. Phys. Lett. 38, 530 (1981); http://dx.doi.org/10.1063/1.92440 (2 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The photoplastic effect is observed in anthracene single crystals under illumination with near‐ultraviolet light. The overall features of the action spectrum of hardening bear a close resemblance to the absorption spectrum. The maximum hardening due to illumination reaches as much as 10% of yield stress at 120 W/m2.
Show PACS
61.72.-y Defects and impurities in crystals; microstructure
62.20.F- Deformation and plasticity
72.40.+w Photoconduction and photovoltaic effects
78.20.-e Optical properties of bulk materials and thin films

Generation of surface gratings with periods < 1000 Å

L. F. Johnson and K. A. Ingersoll

Appl. Phys. Lett. 38, 532 (1981); http://dx.doi.org/10.1063/1.92441 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Simple techniques for doubling the spatial frequency of surface‐relief gratings are demonstrated. Grating periods as small as 750 Å have been produced and further subdivision appears possible.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
42.79.Dj Gratings
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

Contact reaction between Si and rare earth metals

R. D. Thompson, B. Y. Tsaur, and K. N. Tu

Appl. Phys. Lett. 38, 535 (1981); http://dx.doi.org/10.1063/1.92442 (3 pages) | Cited 105 times

Full Text: | Download PDF

Show Abstract
Reactions between Si and thin films of rare‐earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275–900 °C have been studied by using x‐ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325–400 °C), and are stable up to 900 °C. The growth does not follow a layered growth mode.
Show PACS
34.50.Lf Chemical reactions
82.20.Hf Product distribution

Influence of the electric field on collection efficiencies of solar cells

Karl W. Böer

Appl. Phys. Lett. 38, 537 (1981); http://dx.doi.org/10.1063/1.92443 (3 pages)

Full Text: | Download PDF

Show Abstract
Solar cells which show a field‐dependent collection efficiency in the current saturation range must exhibit a field‐dependent carrier redistribution over localized states within the junction. Such redistribution may be caused by ″field quenching″ which is a well‐known effect in photoconductive CdS, providing for field saturation and consequently causing the short‐circuit current to saturate before the emitter limit is reached.
Show PACS
85.30.Kk Junction diodes
85.60.Dw Photodiodes; phototransistors; photoresistors
84.60.Jt Photoelectric conversion

High‐purity ZnSe grown by liquid phase epitaxy

C. Werkhoven, B. J. Fitzpatrick, S. P. Herko, R. N. Bhargava, and P. J. Dean

Appl. Phys. Lett. 38, 540 (1981); http://dx.doi.org/10.1063/1.92444 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
A study was performed to establish the origin and nature of background compensating impurities in undoped ZnSe layers grown by liquid phase epitaxy on ZnSe substrate wafers in a low‐contamination‐level environment. The width of bound exciton lines in low‐temperature photoluminescence spectra was used to define the quality of the material, and the energy of the lines was used to identify these low‐level impurities. The sharpest spectra occurred in layers grown rapidly on a previously grown buffer layer indicating the importance of impurity outdiffusion from the substrate into the growing layer. The sharpness of these bound exciton lines indicates that the total concentration of electrically active impurities (NA+ND) is <1017/cc, an estimate which is confirmed by mass spectroscopy.
Show PACS
78.40.Fy Semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close