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1 May 1981

Volume 38, Issue 9, pp. 653-725

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Synchronously pumped mode‐locked GaAs laser

Wei‐Lou Cao, Aileen M. Vacher, and Chi H. Lee

Appl. Phys. Lett. 38, 653 (1981); http://dx.doi.org/10.1063/1.92493 (2 pages) | Cited 5 times

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A temporally coincident picosecond pulse train from a mode‐locked GaAs laser was produced using two‐photon excitation from a mode‐locked Nd:glass laser. The single pulse width measured by a sum frequency technique was 7 ps or less.
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42.55.Px Semiconductor lasers; laser diodes

Waveguide electro‐optic polarization transformer

R. C. Alferness and L. L. Buhl

Appl. Phys. Lett. 38, 655 (1981); http://dx.doi.org/10.1063/1.92494 (3 pages) | Cited 14 times

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We propose and demonstrate a novel waveguide electro‐optic device which is capable of performing general polarization transformations under electrical control. The device, made with a Ti‐diffused lithium niobate waveguide, combines in a unique optical circuit an electro‐optic (e/o) TE⇄TM mode converter and two e/o phase shifters to provide general polarization transformations. This is the first report of a waveguide e/o device capable of performing arbitrary polarization transformations. As a linear rotator the device exhibits a rotation rate of 15°/V with better than 23‐dB fidelity. We also demonstrate transformation between circular and linear polarization.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

Single‐mode positive‐index guided cw constricted double‐heterojunction large‐optical‐cavity AlGaAs lasers with low threshold‐current temperature sensitivity

D. Botez and J. C. Connolly

Appl. Phys. Lett. 38, 658 (1981); http://dx.doi.org/10.1063/1.92495 (3 pages) | Cited 3 times

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A new type of constricted double‐heterojunction large‐optical‐cavity (CDH‐LOC) laser is obtained by growing relatively thick (0.2–0.3 μm) convex‐lens‐shaped active layers above concave‐lens‐shaped guide layers. By using the effective‐index method it is shown that the resultant lateral waveguide is of the positive‐index type. The device reproducibly provides single‐mode cw laser operation (10 mW cw and 20 mW pulsed) in narrow single‐lobed beams (ϑ∥ = 8°; ϑ⊥ = 30°), and displays very high threshold‐current temperature coefficients, (T0≅135 °C, pulsed and cw) for LOC‐type structures. The cw threshold currents and differential quantum efficiencies (one facet) are between 60–70 mA and 30–35%, respectively. The performance of the ’’positive‐index’’ CDH‐LOC laser is discussed in view of results from the previously reported ’’leaky‐cavity’’ CDH‐LOC laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Extension of lasing wavelengths beyond 0.87 μm in GaAs/AlxGa1−xAs double‐heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 38, 661 (1981); http://dx.doi.org/10.1063/1.92496 (3 pages) | Cited 5 times

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We demonstrate that the lasing wavelengths of GaAs/AlxGa1−xAs double‐heterostructure (DH) lasers can be extended beyond 0.87–0.94 μm without significant increase in the current threshold by incorporating In into the GaAs active layer during molecular beam epitaxy. This shift permits the benefits of reduced optical fiber loss and wavelength multiplexing with 0.83 μm and using the same fibers. A reduction in averaged current‐threshold density (from 800 to 700 A/cm2) was obtained in those InGaAs/AlGaAs DH lasers that have the InGaAs active layer exactly lattice‐matched to the AlGaAs cladding layers. As a result of the stress relief at the lattice‐matched InGaAs/AlGaAs interfaces of these DH lasers, it may be possible to improve the reliability of the lasers operating at 0.88 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A large linear electro‐optic effect in a polar organic crystal 2‐methyl‐4‐nitroaniline

G. F. Lipscomb, A. F. Garito, and R. S. Narang

Appl. Phys. Lett. 38, 663 (1981); http://dx.doi.org/10.1063/1.92497 (3 pages) | Cited 16 times

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The dc linear electro‐optic effect and the x‐ray crystal structure of the organic molecular solid 2‐methyl‐4‐nitroaniline (MNA) have been studied. One polar orientation was found to have an exceptionally large figure of merit for electro‐optic phase retardation ( 1/2 (n13r11−n33r31) = 270±50×10−12 m/V), which is traced to a single, large component of the corresponding microscopic molecular susceptibility. Comparison with second‐harmonic generation data demonstrates that the liner electro‐optic effect in MNA is primarily electronic in nature.
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78.20.Jq Electro-optical effects
42.65.-k Nonlinear optics
61.66.Hq Organic compounds

Collision‐induced gain

D. Rogovin and Petras Avizonis

Appl. Phys. Lett. 38, 666 (1981); http://dx.doi.org/10.1063/1.92498 (3 pages) | Cited 7 times

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We present a novel scheme for achieving gain based on the notion of inducing a transient electric dipole moment in long‐lived atomic or molecular metastable states via collision processes. As specific applications of this concept, we determine the induced gain for the I2P1/2(5p5) → 2P3/2(5p5) and the He1S0(1s2s) → 1S0(1s2) transitions for the case in which radiation emission is initiated by collisions with a molecular dipole.
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42.55.Ah General laser theory

Two‐dimensional coupled differential equations for degenerate four‐wave mixing

Tony Wilson and Laszlo Solymar

Appl. Phys. Lett. 38, 669 (1981); http://dx.doi.org/10.1063/1.92499 (2 pages) | Cited 8 times

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Coupled differential equations which include the effect of nonplanar beams and of nonuniform amplitude distributions are derived for the amplitudes of the four waves. The method is illustrated by two examples for the case when the pump beams are much stronger than the object and image beams.
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63.10.+a General theory
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes

Generation of optical pulses shorter than 0.1 psec by colliding pulse mode locking

R. L. Fork, B. I. Greene, and C. V. Shank

Appl. Phys. Lett. 38, 671 (1981); http://dx.doi.org/10.1063/1.92500 (2 pages) | Cited 279 times

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We report a novel passive mode‐locking technique in which two synchronized counterpropagating pulses interact in a thin, saturable absorber to produce a short pulse. Continuous stable trains of pulses shorter than 0.1 psec are obtained using a ring laser configuration.
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42.65.-k Nonlinear optics
42.79.Hp Optical processors, correlators, and modulators

Fabrication of periodic waveguides by ion exchange

E. Y. B. Pun and Alfredo Yi‐Yan

Appl. Phys. Lett. 38, 673 (1981); http://dx.doi.org/10.1063/1.92474 (2 pages) | Cited 2 times

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Periodic waveguides have been fabricated by diffusing silver ions into soda lime glass substrates through aluminium grating masks. An efficient beam splitter has been demonstrated. The technique is simple to implement and could be used to fabricate other efficient thin‐film devices.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Electron paramagnetic resonance spectroscopy with photothermal and optoacoustic detection

R. C. DuVarney, A. K. Garrison, and G. Busse

Appl. Phys. Lett. 38, 675 (1981); http://dx.doi.org/10.1063/1.92475 (2 pages) | Cited 6 times

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Electron paramagnetic resonance (EPR) spectroscopy has been performed using optoacoustic piezoceramic detection and photothermal infrared detection. Though the signal‐to‐noise ratio is lower than in conventional EPR detection at 100 kHz, it compares favorably at low modulation frequencies. These detection techniques offer the opportunity of obtaining EPR depth profiles that cannot be obtained using the conventional technique.
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76.30.-v Electron paramagnetic resonance and relaxation
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Laser generation as a standard acoustic source in metals

D.A. Hutchins, R.J. Dewhurst, S.B. Palmer, and C.B. Scruby

Appl. Phys. Lett. 38, 677 (1981); http://dx.doi.org/10.1063/1.92476 (3 pages) | Cited 27 times

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Absolute acoustic waveforms, generated by laser irradiation of aluminium and mild steel samples, have been detected at epicenter with a wide‐band capacitance transducer. Comparison has been made with theoretical waveforms, utilizing theory for wave propagation within a plate and assuming certain source characteristics. Results have shown that laser generation is able to produce three types of standard acoustic source, namely a horizontal force dipole and a normal force monopole, each with step‐function time dependence, and a normal force monopole with δ‐function time dependence. Underlying generation mechanisms are discussed.
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43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
42.79.-e Optical elements, devices, and systems
79.20.Ds Laser-beam impact phenomena

ϑ‐pinch ionization for field‐reversed configuration formation

W. T. Armstrong, J. C. Cochrane, R. J. Commisso, J. Lipson, and M. Tuszewski

Appl. Phys. Lett. 38, 680 (1981); http://dx.doi.org/10.1063/1.92477 (3 pages) | Cited 12 times

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The behavior of a plasma produced by a ringing ϑ‐pinch discharge in the presence of a 2.3‐kG bias field is examined for the case where the net field passes through zero. Experimental studies, employing internal and external field probes, indicated ∼50% of the initially applied bias flux is excluded by the plasma with this ionization technique. A theoretical model incorporating field diffusion and elastic ion‐neutral collisions is used to describe the observed dynamics of the plasma sheath.
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52.55.Ez Theta pinch

Electrical and optical properties of tellurium‐doped silicon

Alice L. Lin, Allen G. Crouse, Jerry Wendt, Albert G. Campbell, and Roger Newman

Appl. Phys. Lett. 38, 683 (1981); http://dx.doi.org/10.1063/1.92478 (3 pages) | Cited 14 times

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Te‐doped Si single crystals were successfully grown by the float zone technique with a doping concentration as high as 7×1016/cm3. The tellurium ionization level in silicon was investigated by both the temperature dependence of the Hall effect and by infrared absoprtion spectral measurements. Close agreement was found between these two techniques. The former shows a thermal activation energy for Si:Te of 0.20 eV, and the latter shows an optical activation energy of 0.1988 eV. The spacings and shapes of the excitation spectra for neutral Te donors in Si exhibits a close resemblance to that of other hydrogenic donor impurities in Si. The maximum absorption cross section for the Te ground‐state—continuum transition is σmax = 1.4×1016 cm2 at hν = 0.27 eV.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Fr Low-field transport and mobility; piezoresistance

Deep levels associated with nearest‐neighbor substitutional defect pairs in GaAs

Otto F. Sankey and John D. Dow

Appl. Phys. Lett. 38, 685 (1981); http://dx.doi.org/10.1063/1.92479 (3 pages) | Cited 37 times

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A simple model calculation of the deep energy levels produced by pairs of nearest‐neighbor substitutional defects in GaAs is presented. The deep levels of a1 and e symmetry for 841 sp3‐bonded defect‐pair combinations are predicted.
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78.40.Fy Semiconductors

Si‐doped GaAs by SiCl4‐AsCl3 liquid solution in AsCl3/GaAs‐Ga/H2 chemical vapor deposition system

M. Feng, V. Eu, T. Zielinski, H. B. Kim, and J. M. Whelan

Appl. Phys. Lett. 38, 688 (1981); http://dx.doi.org/10.1063/1.92480 (3 pages) | Cited 2 times

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We have used SiC14/AsC13 liquid solutions for Si doping of GaAs epitaxial layers grown using the AsC13/GaAs‐Ga/H2 chemical vapor deposition system. These solutions can be readily prepared with reproducible compositions and can provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H2 flow rate and by varying the temperature of the SiC14/AsC13 doping solution. The epitaxial layers doped using this technique have excellent room‐temperature and liquid‐nitrogen mobilities for electron concentrations between 1×1016 and 8×1018 cm−3. This doping method is particularly useful for the growth as GaAs epitaxial layers for field effect transistor devices.
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81.10.Dn Growth from solutions

Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices

H. L. Störmer, A. Pinczuk, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 38, 691 (1981); http://dx.doi.org/10.1063/1.92481 (3 pages) | Cited 96 times

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The introduction of an undoped (AlGa)As spacer enhances significantly the low‐temperature mobility in modulation‐doped GaAs‐(AlGa)As superlattices. Mobilities increase monotonically with spacer thickness. This indicates that ionized impurity scattering can be further suppressed by increasing the separation between carriers and their parent donors. Hall mobilities of 93 000 cm2/V sec were observed for average Hall densities of 4.9×1016 cm−3 at 4.2 K.
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72.20.Fr Low-field transport and mobility; piezoresistance

Monocrystalline aluminium ohmic contact to n‐GaAs by H2S adsorption

J. Massies, J. Chaplart, M. Laviron, and N. T. Linh

Appl. Phys. Lett. 38, 693 (1981); http://dx.doi.org/10.1063/1.92473 (3 pages) | Cited 39 times

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700‐K H2S adsorption in the monolayer range onto the GaAs (100) surface induces profound modifications of surface properties. Al in situ epitaxially deposited near room temperature by molecular beam epitaxy (MBE) on a H2S adsorbed semiconductor surface exhibits low‐effective Schottky‐barrier height. It is shown that this Schottky‐barrier lowering can be used to obtain monocrystalline nonalloyed ohmic contacts with low specific‐contact resistances.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices

Hydrogenated amorphous silicon films prepared by an ion‐beam‐sputtering technique

Michiya Kobayashi, Junji Saraie, and Hiroyuki Matsunami

Appl. Phys. Lett. 38, 696 (1981); http://dx.doi.org/10.1063/1.92482 (2 pages) | Cited 3 times

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Hydrogenated amorphous silicon films were obtained by an ion‐beam‐sputtering technique. Hydrogen content in the films increases with the increasing flow rate of hydrogen into the sputtering chamber. The optical energy gap increases from 1.4 to 1.62 eV and the electrical conductivity at room‐temperature decreases from 10−5 to 5×10−9 Ω/cm with increasing hydrogen content in the films from 0 to 9.2 at.%, respectively.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.30.Hv Other nonmetallic inorganics
72.80.Ng Disordered solids
71.23.-k Electronic structure of disordered solids

Pressure dependence of the energy levels of irradiation‐induced defects in GaAs

R. H. Wallis, A. Zylbersztejn, and J. M. Besson

Appl. Phys. Lett. 38, 698 (1981); http://dx.doi.org/10.1063/1.92483 (3 pages) | Cited 27 times

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We have measured the pressure dependence of the energy levels of the deep traps E2, E3, and E4 produced by irradiation of GaAs with 1‐MeV electrons. All three traps have pressure coefficients which are an appreciable fraction of that of the direct gap, with values relative to the bottom of the conduction band of 8.8, 13.5, and 10.5 meV/kbar, respectively, being obtained. We conclude that the previous identification of the E3 level as being the isolated Ga vacancy is far from certain.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Fe Electron and positron radiation effects
62.50.-p High-pressure effects in solids and liquids

On the use of AsH3 in the molecular beam epitaxial growth of GaAs

A. R. Calawa

Appl. Phys. Lett. 38, 701 (1981); http://dx.doi.org/10.1063/1.92484 (3 pages) | Cited 66 times

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High‐quality epitaxial layers of GaAs have been grown in a molecular beam epitaxial system using AsH3 as the arsenic source. Peak electron mobilities of over 130 000 cm2/V sec and 77‐K mobilities as high as 110 000 cm2/V sec have been observed in a 5‐μm‐thick GaAs layer with a carrier concentration of 2.4×1014 cm−3. These layers were grown on Cr‐doped semi‐insulating GaAs substrates. Initial results indicate that As1 may be the preferred specie for the growth of high‐purity GaAs.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photoluminescence in spray‐pyrolyzed CdTe

Bernard J. Feldman, J. L. Boone, and T. Van Doren

Appl. Phys. Lett. 38, 703 (1981); http://dx.doi.org/10.1063/1.92485 (3 pages) | Cited 10 times

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We report very intense photoluminescence in spray‐pyrolyzed CdTe at 77 K. We also notice striking similarities in the luminescence spectra, decay, and temperature dependence between CdTe and other thin‐film semiconductors, which we interpret in terms of recombination at defect sites in intergranular regions.
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78.55.Hx Other solid inorganic materials
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Saturation effects of cathodoluminescence in rare‐earth activated epitaxial Y3Al5O12 layers

W. F. van der Weg and M. W. van Tol

Appl. Phys. Lett. 38, 705 (1981); http://dx.doi.org/10.1063/1.92486 (3 pages) | Cited 22 times

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The intensity of luminescence in YAG, activated with rare‐earth ions, shows a nonlinear behavior as a function of incident current density under electron bombardment. Tb3+ or Eu3+ activated samples exhibit deviation from linearity at input power densities exceeding 104 W/m2, while Ce3+ luminescence is linear up to the highest power densities studied (108 W/m2). It is shown that nonlinearity effects, in cases where temperature quenching can be excluded, are caused by saturation of the excited‐state population. The results are interpreted in a model which also takes into account excited‐state absorption within one activator and energy transfer between neighboring activator ions.
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78.60.Hk Cathodoluminescence, ionoluminescence

Molecular beam epitaxial GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor applications

W. I. Wang, S. Judaprawira, C. E. C. Wood, and L. F. Eastman

Appl. Phys. Lett. 38, 708 (1981); http://dx.doi.org/10.1063/1.92487 (3 pages) | Cited 19 times

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High‐quality GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor (MESFET) applications have been grown by molecular beam epitaxy. 0.5‐μm‐thick n‐type GaAs active layers with free‐carrier concentrations ∼1.1×1017 cm−3 and room‐temperature electron mobilities ∼4400 cm2 V−1 sec−1 were routinely obtained on top of undoped AlxGa1‐x As (x∼0.4) buffer layers. MESFET’s fabricated on these layers showed approximately 2000‐Ω‐mm output resistance.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electrolyte‐oxide‐semiconductor junction at the p‐InP/V 2+‐V 3+ interface

S. Menezes, H. J. Lewerenz, F. A. Thiel, and K. J. Bachmann

Appl. Phys. Lett. 38, 710 (1981); http://dx.doi.org/10.1063/1.92488 (3 pages) | Cited 11 times

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Voltammetric measurements show that a thin passivating film exists at the p‐InP/V2+‐V3+ electrolyte interface, which allows efficient minority‐carrier collection via tunneling. An electrolyte‐oxide‐semiconductor energy band diagram is presented that explains the properties of the p‐InP/V2+‐V3+, 4‐M HCl/C solar cell.
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73.40.Mr Semiconductor-electrolyte contacts

A tandem photovoltaic cell using a thin‐film polymer electrolyte

T. Skotheim

Appl. Phys. Lett. 38, 712 (1981); http://dx.doi.org/10.1063/1.92489 (3 pages) | Cited 12 times

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A tandem photovoltaic cell has been fabricated using a thin‐film plastic electrolyte to connect in optical and electrical series an n‐type CdS thin‐film and a p‐type CdTe single crystal. The electrolyte was a thin film of poly(ethylene oxide) with a polysulfide redox couple. An open circuit voltage of 625 mV and a short‐circuit current of 35 μA/cm2 were obtained under illumination of 100 mW/cm2 with a xenon lamp. The cell output in the present configuration is limited by the series resistance and insufficient band bending in the semiconductor electrodes due to unfavorable resistance matching of the components.
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84.60.Jt Photoelectric conversion
82.47.-a Applied electrochemistry
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