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15 Dec 1981

Volume 39, Issue 12, pp. 935-999


Time resolved luminescence of photoexcited p‐type gallium arsenide by population mixing

D. Rosen, A. G. Doukas, Y. Budansky, A. Katz, and R. R. Alfano

Appl. Phys. Lett. 39, 935 (1981); http://dx.doi.org/10.1063/1.92617 (3 pages) | Cited 44 times

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A novel technique in time resolved luminescence spectroscopy called population mixing using a subpicosecond cw mode‐locked dye laser has been developed and applied to p‐type GaAs at low temperatures. Using this technique the relaxation lifetime for electron recombination was measured to be 39±7 ps for p‐type GaAs with Zn at 6×1018 cm−3 hole concentration. This is comparable to the relaxation time measured by a streak camera.
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78.40.Fy Semiconductors
79.20.Ds Laser-beam impact phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Self‐focusing of a low power cw laser beam via optically induced birefringence in a nematic liquid‐crystal film

I. C. Khoo, S. L. Zhuang, and S. Shepard

Appl. Phys. Lett. 39, 937 (1981); http://dx.doi.org/10.1063/1.92618 (4 pages) | Cited 27 times

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We present the results of a detailed experimental study of the self‐focusing of a low intensity cw laser in its passage through a nematic liquid‐crystal film. The results are in quantitative agreement with our theory of optically induced birefringence as a function of geometry, thickness, and intensity. We have also quantitatively measured the relative contribution from thermal lensing effect.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Lc Birefringence

Exceptional second‐order nonlinear optical susceptibilities of quinoid systems

S. J. Lalama, K. D. Singer, A. F. Garito, and K. N. Desai

Appl. Phys. Lett. 39, 940 (1981); http://dx.doi.org/10.1063/1.92619 (3 pages) | Cited 17 times

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A new class of organic quinoid systems possessing intrinsically large, nonlinear second‐order optical susceptibilities has been developed based on theoretical calculations and dc‐induced second‐harmonic generation measurements of the molecular second‐order optical susceptibilities β. For one example, 2‐(4‐dicyanomethylenecyclohexa‐2, 5‐dienylidine)‐imidazolidine (DCNQI), βx = −240±60×10−30 cm5/esu. The unusually large magnitude and sign originate from certain charge‐correlated features in the quinoid ground and excited states.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
31.15.bu Semi-empirical and empirical calculations (differential overlap, Hückel, PPP methods, etc.)
42.70.-a Optical materials

High‐efficiency high‐power butt coupling of single‐mode diode lasers to indiffused LiNbO3 optical waveguides

J. M. Hammer, D. Botez, C. C. Neil, and J. C. Connolly

Appl. Phys. Lett. 39, 943 (1981); http://dx.doi.org/10.1063/1.92620 (3 pages) | Cited 2 times

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We have butt coupled 13‐mW cw and 27‐mW (5‐μs‐long pulses, 5% duty cycle) optical power into a single mode Ti‐LiNbO3 optical waveguide by using single‐mode diode lasers at λ = 0.84 μm. Coupling efficiencies greater than 68% were observed. These are the highest diode‐laser powers coupled by any means into the technologically important class of LiNbO3 optical waveguides. Our observations support the theory of butt coupling between injection lasers and waveguides at hitherto unavailable power levels and efficiencies. The light coupled into the waveguide has a substantially reduced incoherent power level when compared to that emitted by the laser.
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42.62.-b Laser applications
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Detection of gas mixing processes by resonant photoacoustic spectroscopy

J. Röper and P. Hess

Appl. Phys. Lett. 39, 946 (1981); http://dx.doi.org/10.1063/1.92621 (3 pages) | Cited 3 times

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An apparatus for an accurate, repeated measurement of the acoustic resonance frequencies of a photoacoustic cell is described. The shift of the resonance frequency of the first radial mode, caused by mixing of CH4 and N2 in the resonator, is monitored by repeated recording of the acoustic resonance curves. The time needed to reach the equilibrium concentrations varies between minutes and several days depending on the mixing procedure employed and the composition of the gas mixture. It is shown that condensation of the gases for a short time accelerates the mixing process considerably.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Laser induced irreversible absorption changes in alkali halides at 10.6 μm

S.‐T. Wu and M. Bass

Appl. Phys. Lett. 39, 948 (1981); http://dx.doi.org/10.1063/1.92622 (3 pages) | Cited 10 times

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Laser induced irreversible changes in the absorption of alkali halides has been observed by using repetitively pulsed laser calorimetry. These changes occur at intensities below that required for laser induced breakdown and necessitate a change in the definition of laser damage threshold. A simple model is proposed to explain these observations based on the accumulation of microscopic failures as a result of each pulse.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Native tellurium dioxide layer on cadmium telluride: A high‐resolution electron microscopy study

F. A. Ponce, R. Sinclair, and R. H. Bube

Appl. Phys. Lett. 39, 951 (1981); http://dx.doi.org/10.1063/1.92623 (3 pages) | Cited 14 times

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An epitaxial tellurium dioxide layer has been observed on an oxidized {110} surface of a cadmium telluride single crystal. The structure of the oxide layer has been determined using high‐resolution transmission electron microscopy (TEM) and identified as that of the mineral tellurite (TeO2). The interface is abrupt and coherent throughout the observed region. Crystallographic relationships at the interface suggest a model for oxidation.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments

Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)

R. F. C. Farrow, G. R. Jones, G. M. Williams, and I. M. Young

Appl. Phys. Lett. 39, 954 (1981); http://dx.doi.org/10.1063/1.92616 (3 pages) | Cited 94 times

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Heteroepitaxial films on CdTe have been grown by molecular beam epitaxy (MBE) on InSb (001) orientation substrates at growth temperatures ≲220 °C. The structural perfection of these films has been explored by double crystal x‐ray diffraction techniques, which reveal that films of ∼1 μm thick grown at 150 and 220 °C are free of low‐angle grain boundaries and are exactly lattice matched to the InSb substrate. The lattice parameter mismatch is accommodated by misfit elastic strain.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.60.-p Physical properties of thin films, nonelectronic
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Laser microreaction for deposition of doped silicon films

D. J. Ehrlich, R. M. Osgood, and T. F. Deutsch

Appl. Phys. Lett. 39, 957 (1981); http://dx.doi.org/10.1063/1.92624 (3 pages) | Cited 38 times

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An Ar‐ion laser has been used to activate surface pyrolytic deposition of polycrystalline Si in a several micrometer reaction zone. Controlled doping with boron during deposition allows one‐step direct writing of highly conducting Si lines with linewidths as small as 1 μm. An unexpectedly fast deposition rate is associated with changes in the reaction kinetics as the dimensions of the reaction volume are reduced to microscopic lengths.
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79.20.Ds Laser-beam impact phenomena

Room‐temperature electron diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs

M. M. Tashima, L. W. Cook, and G. E. Stillman

Appl. Phys. Lett. 39, 960 (1981); http://dx.doi.org/10.1063/1.92625 (2 pages) | Cited 9 times

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Room‐temperature electron diffusion lengths (Ln) were determined for lattice matched, p‐type InGaAsP and InGaAs layers grown by liquid phase epitaxy on Sn‐doped (100)‐InP substrates by measuring the variation of the short‐circuit photocurrent as a focused laser beam was scanned along a beveled (ϑ∼1 °) p‐n junction. The hole concentrations, determined by capacitance‐voltage (C‐V) measurements, indicated an almost linear relationship between the hole concentrations in both the quaternary and ternary layers and the amount of Zn in the melt for the growth temperatures and substrate orientation used in this work. The electron diffusion lengths were longest at the lowest hole concentrations and decreased monotonically as the concentration increased. At the lowest doping levels, Ln was 3.5 μm at p = 3×1015 cm−3 for the quaternary and 2.5 μm at p = 1.4×1016 cm−3 for the ternary. At the highest hole concentration (p = 5×1018 cm−3) Ln was 0.13 and 0.83 μm for InGaAsP and InGaAs, respectively.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Threshold behavior of Si films melted with a cw yttrium aluminum garnet laser

R. A. Lemons and M. A. Bösch

Appl. Phys. Lett. 39, 962 (1981); http://dx.doi.org/10.1063/1.92626 (3 pages) | Cited 3 times

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When polycrystalline silicon films deposited on fused quartz are heated with 1.06 μm radiation from a cw yttrium aluminum garnet laser, melting occurs at a sharp threshold of laser power and time. This threshold behavior is interpreted as a thermal runaway phenomenon. The initially weak absorption of the laser beam slowly heats the film thereby increasing the absorption. This positive feedback results in abrupt melting after a substantial delay. A one‐dimensional analysis of the heat flow predicts the essential features of this effect.
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75.20.Ck Nonmetals
79.20.Ds Laser-beam impact phenomena

Optical properties and water absorption of anodically grown native oxides on InP

A. A. Studna and G. J. Gualtieri

Appl. Phys. Lett. 39, 965 (1981); http://dx.doi.org/10.1063/1.92627 (2 pages) | Cited 12 times

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The optical properties from 1.5–6.0 eV and the absorption of H2O for an electrochemically grown anodic oxide on InP 〈100〉 have been measured. The oxide thickness was observed to increase by roughly 40% and the refractive index to decrease by 7% in the range of 2 eV when exposed to an ambient containing H2O. The oxide film was also heated to a temperature of 200 °C. The results indicate a change in the chemical composition of the oxide when exposed to either an ambient containing water or an elevated temperature.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.10.Dn Growth from solutions
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Solar cells made by laser‐induced diffusion directly from phosphine gas

G. B. Turner, D. Tarrant, G. Pollock, R. Pressley, and R. Press

Appl. Phys. Lett. 39, 967 (1981); http://dx.doi.org/10.1063/1.92628 (3 pages) | Cited 12 times

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A new method for making p‐n junctions based on immersion in a transparent dopant gas followed by irradiation with a pulsed laser is presented. An alexandrite laser was used, operating at 0.73 μm where photolysis of the dopant gas PH3 does not occur. Multiple pulses of 2.2–2.7 J/cm2 were used to make Si solar cells with total area efficiencies up to 8.6% without benefit of antireflection coatings.
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84.60.Jt Photoelectric conversion
79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology

X‐ray photoelectron spectroscopy studies of Ag photodoping in Se‐Ge amorphous films

S. Zembutsu

Appl. Phys. Lett. 39, 969 (1981); http://dx.doi.org/10.1063/1.92629 (3 pages) | Cited 14 times

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The Ag‐deposited Se80Ge20 (at. %) amorphous films are found to show a large chemical shift (∼1.2 eV) in the Se 3d level toward lower binding energies and to form a Ag2Se phase on the surface region. The chemical shift of the Se 3d level by Ag photodoping becomes large with increasing UV exposure (15 mW/cm2) and is saturated at about 0.6 eV for UV exposure of more than 60 s. The chemical shift can be almost explained by the electronegativity scale. Pauling’s charge on the Se atom can be estimated as −0.04 in the Ag‐photodoped state.
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71.23.-k Electronic structure of disordered solids
81.65.-b Surface treatments
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Donor‐acceptor pair luminescence in Si(In,Li): Observation of the In‐X center

U. O. Ziemelis, M. L. W. Thewalt, and R. R. Parsons

Appl. Phys. Lett. 39, 972 (1981); http://dx.doi.org/10.1063/1.92630 (3 pages) | Cited 3 times

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Low‐temperature photoluminescence measurements carried out in Si(In,Li) indicate that the In‐X center participates as a substitutional acceptor together with the interstitial donor Li‐O in donor‐acceptor pair recombination, giving rise to a new series of sharp lines and a broad band characteristic of such processes. Straightforward analysis, assuming only a Coulomb interaction between otherwise isolated centers confirms that recombination involving In‐X and Li‐O centers separated by distances ranging from 9.7 to 25 Å is responsible for the observed sharp line structure.
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78.40.Fy Semiconductors

Theory of deep traps at semiconductor interfaces

Roland E. Allen, Jean Pierre Buisson, and John D. Dow

Appl. Phys. Lett. 39, 975 (1981); http://dx.doi.org/10.1063/1.92631 (2 pages) | Cited 8 times

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Impurities that are shallow donors or acceptors in bulk semiconductors can become deep traps at interfaces. For example, P on one of the Si sites at a Si/GaP interface is predicted to be a deep trap.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors

Electronic transport and microstructure in molybdenum silicide thin films

Roger E. Weinmeister and John E. Mahan

Appl. Phys. Lett. 39, 977 (1981); http://dx.doi.org/10.1063/1.92632 (3 pages) | Cited 3 times

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Electronic transport and microstructure were investigated in molybdenum silicide thin films prepared by ion beam sputtering from a MoSi2 powder source. Auger and x‐ray analysis of the as‐deposited films indicated a gross Mo/Si atomic ratio of ∼1/2, but a probable microstructure of strongly oriented Mo5Si3 crystallites in a Si‐rich amorphous matrix. High‐temperature annealing reduced the room‐temperature resistivity by almost an order of magnitude, changed the sign of the temperature coefficient from negative to positive, and increased the Hall coefficient. The annealing also apparently increased the volume fraction of the film occupied by the oriented Mo5Si3 phase. It is shown that detailed transport data is needed for correctly evaluating the potential of refractory metal silicides as an improved gate electrode and interconnection material for integrated circuits.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.-a Thin film structure and morphology
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Theory of a modulated barrier photodiode

C. Y. Chen

Appl. Phys. Lett. 39, 979 (1981); http://dx.doi.org/10.1063/1.92633 (3 pages) | Cited 11 times

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A theory underlying the operation of a recently reported modulated barrier photodiode has been developed. Energy barrier lowering is shown to be the mechanism responsible for the gain. By balancing the minority‐carrier flux in the steady state, the barrier lowering for a given illumination condition can be obtained. The theory agrees very well both qualitatively and quantatively with the experimental results.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Cyclotron resonance linewidth in selectively doped GaAs‐AlxGa1−xAs heterojunctions

P. Voisin, Y. Guldner, J. P. Vieren, M. Voos, P. Delescluse, and Nguyen T. Linh

Appl. Phys. Lett. 39, 982 (1981); http://dx.doi.org/10.1063/1.92634 (3 pages) | Cited 27 times

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Far‐infrared cyclotron resonance (CR) experiments in a selectively doped AlxGa1−xAs ‐GaAs heterojunction are presented. Quantum oscillations appear in the CR line amplitude as theoretically predicted for a two‐dimensional electron gas. The CR linewidth is found to depend on the infrared photon energy, and its correlation with the static mobility is interpreted in the framework of the Ando and Uemura’s model for a two‐dimensional electron gas in a high magnetic field.
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78.20.Ls Magneto-optical effects
75.20.Ck Nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
76.40.+b Diamagnetic and cyclotron resonances

Infrared technique for study of thin‐film interfaces

A. Gungor, H. D. Drew, H. R. Verdun, and J. D. Jensen

Appl. Phys. Lett. 39, 985 (1981); http://dx.doi.org/10.1063/1.92635 (2 pages) | Cited 4 times

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Far‐infrared studies have been made of n‐type epitaxial PbTe films at high magnetic fields making use of the Nernst–Ettingshausen effect. The data are analyzed in terms of a parabolic band model of the conductivity tensor and a model for the heat flow in the sample. Comparison of measurements made with the radiation incident from the vacuum side with those with radiation incident from the substrate side of the sample gives information about the electronic structure at the two interfaces of the film.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Redissolution of precipitated oxygen in Czochralski‐grown silicon wafers

Fumio Shimura

Appl. Phys. Lett. 39, 987 (1981); http://dx.doi.org/10.1063/1.92636 (3 pages) | Cited 13 times

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The redissolution behavior of precipitated oxygen in Czochralski‐grown silicon wafers during high‐temperature annealing (1230 °C) is investigated by means of infrared absorption and transmission electron microscopy. It is shown that the oxygen redissolution rate, which is 102∼103 larger than the precipitation rate, is highly dependent on the oxygen precipitation temperature which in turn determines the form of the precipitates. The dependence is described by the difference in the total surface area of precipitates and by the dislocation pinning effect.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.30.Hv Other nonmetallic inorganics
81.10.Fq Growth from melts; zone melting and refining
81.40.Gh Other heat and thermomechanical treatments

p‐n junction formation in n‐AlGaAs by beryllium ion implantation

J. Comas and S. M. Bedair

Appl. Phys. Lett. 39, 989 (1981); http://dx.doi.org/10.1063/1.92637 (3 pages) | Cited 8 times

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Beryllium‐implanted liquid phase epitaxy n‐AlGaAs layers have exhibited p‐n junction behavior after annealing. Graded or abrupt junction behavior was found to be implant fluence dependent. Secondary ion mass spectrometry Be concentration profiles indicate that the graded junctions observed for the higher fluence implants were due to in‐depth migration of Be. Mesa diodes have shown ideality factors of about 2 and avalanche breakdown in reverse bias.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Trapped vortex memory cells

Shingo Uehara and Koichi Nagata

Appl. Phys. Lett. 39, 992 (1981); http://dx.doi.org/10.1063/1.92638 (2 pages) | Cited 4 times

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A memory cell is proposed which uses vortices in type‐II superconductor thin film as information bits. In the memory cell, vortices are generated by coincident current in two superconductor lines and are read out by a Josephson junction. Preliminary experimental results on vortex generation and detection are also reported.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.-q Properties of superconductors

Scaling characteristics of ultrasmall Josephson junctions

D. Rogovin and J. Nagel

Appl. Phys. Lett. 39, 994 (1981); http://dx.doi.org/10.1063/1.92639 (3 pages) | Cited 1 time

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Recent advances in the technology of ultrasmall Josephson junctions focus interest on the scaling characteristics of these devices. We examine the size dependence of the pair current, the rms noise current as well as the voltage fluctuations of ultrasmall junctions, and find novel scaling behavior. Among other things, the low‐temperature zero voltage, dc pair current depends on the cube of the junction area.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering

J. B. Clegg and D. J. O’Connor

Appl. Phys. Lett. 39, 997 (1981); http://dx.doi.org/10.1063/1.92640 (3 pages) | Cited 5 times

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Distortions which occur in secondary ion mass spectrometry (SIMS) concentration profiles have been studied with samples of Si(Bi) calibrated by Rutherford Backscattering. It is shown that with normal incidence oxygen ion bombardment over the energy range 1–6 keV per atom, the SIMS profile is broadened due to ion beam matrix effects. The true profile shape can be extracted from the energy dependence of the profile width. Profile broadening has also been observed with Si(In) and Si(Sb) but not with Si(B). The observed broadening cannot be explained simply by collisional mixing of the target atoms.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
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