APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

1 Jul 1981

Volume 39, Issue 1, pp. 1-126

Page 1 of 2 Pages Next Page | Jump to Page

New transitions in the photoluminescence of GaAs quantum wells

R. C. Miller, D. A. Kleinman, O. Munteanu, and W. T. Tsang

Appl. Phys. Lett. 39, 1 (1981); http://dx.doi.org/10.1063/1.92548 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
When GaAs quantum wells are optically excited with intensities ≳10 kW/cm2 new peaks appear in the photoluminescence spectrum at low temperatures. The excitation spectra are used to demonstrate that the new peaks correspond to the recombination of electrons in excited well states, n≳1, with holes in n = 1 states. These parity‐forbidden transitions, Δn odd, derive their strength from three body interactions that occur at high excitation levels.
Show PACS
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.40.Rs Electrical and magnetic properties related to treatment conditions

High‐temperature cw and pulsed operation in constricted double‐heterojunction AlGaAs diode lasers

D. Botez, J. C. Connolly, and D. B. Gilbert

Appl. Phys. Lett. 39, 3 (1981); http://dx.doi.org/10.1063/1.92556 (4 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Constricted double‐heterojunction diode lasers of positive‐index lateral guiding and low‐threshold‐current design are found to operate cw to 170 °C (ambient temperature) and pulsed to 280 °C. High threshold‐current temperature coefficients (T0≳230 °C) and constant differential quantum efficiencies are found up to 100 °C. Above 100 °C the temperature‐dependent current‐focusing effect responsible for high‐T0 behavior appears to saturate. Single‐longitudinal‐mode cw operation is recorded up to 150 °C. Two effects, a strong temperature dependence of the threshold current density above 180 °C (T′0 = 40–50 °C), and sublinear spontaneous emission above 220 °C, are believed to reflect the same nonradiative Auger recombination process currently proposed to explain InGaAsP laser behavior near room temperature.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
79.20.Fv Electron impact: Auger emission

16‐μm laser oscillation in propyne

T. A. Fischer and C. Wittig

Appl. Phys. Lett. 39, 6 (1981); http://dx.doi.org/10.1063/1.92519 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
An optically pumped propyne laser with tunable output in the 609–637‐cm−1 region is reported. The pump source is a transverse electric atmosphere CO2 laser, and 16‐μm laser energies as high as 6 mJ are obtained.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Giant stark broadening of atomic gallium emission lines near a high field tip

T. Venkatesan, A. Wagner, D. L. Nash, A. J. Mungo, and D. Barr

Appl. Phys. Lett. 39, 9 (1981); http://dx.doi.org/10.1063/1.92532 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The optical spectrum of gallium atoms produced and excited near a self‐formed high‐field emission tip of a liquid metal gallium ion source has been observed in detail. The spectrum reveals several interesting features. The dispersed neutral gallium lines exhibit asymmetric tails extending over tens of angstroms. The broadening is identified as due to quadratic stark effect. The maximum broadening is limited by field ionization of the atom from its excited state. The agreement with classical results is reasonable. A background continuum has also been observed, which may be due to transition radiation arising from collision of electrons, produced during field ionization, with the liquid‐metal tip.
Show PACS
32.60.+i Zeeman and Stark effects

Picosecond spectroscopy of bound excitons in CuCl using a synchronously operating streak camera

J. G. Fujimoto, T. K. Yee, and M. M. Salour

Appl. Phys. Lett. 39, 12 (1981); http://dx.doi.org/10.1063/1.92544 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Single crystals of CuCl at 8 K were excited with the low‐intensity frequency‐doubled output of an actively mode‐locked R6‐G dye laser. The time dependence of the bound exciton luminescence was measured directly by a synchronously operating electron‐optical streak camera accumulating data at the dye laser repetition rate of 82 MHz. The instrumental time resolution was ∼25 ps. The observed bound exciton lifetime for the I line (3898 Å) was typically ∼130 ps with a formation time of less than 10 ps.
Show PACS
78.20.-e Optical properties of bulk materials and thin films
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet
71.35.-y Excitons and related phenomena

Repetitive pulsating stripe geometry GaAlAs double‐heterostructure lasers with a stripe by a shallow Zn diffusion

K. Hanamitsu, T. Fujiwara, and M. Takusagawa

Appl. Phys. Lett. 39, 14 (1981); http://dx.doi.org/10.1063/1.92545 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We have fabricated a repetitively pulsating stripe geometry GaAlAs double‐heterostructure laser with a stripe by a shallow Zn‐diffusion into n‐GaAs top layer, generating high‐power fundamental transverse‐mode optical pulse trains. Spatially inhomogeneous current injection for exciting pulsations is achieved by a nonuniform breakover in space‐charge region under the Zn‐diffused stripe. These generated optical pulses have a peak power of more than 10 mW, a width of 0.4 ns, and a repetition frequency of 200 MHz–1 GHz.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Efficient second‐harmonic generation of Nd:YAG laser radiation using warm phasematching LiNbO3

R. L. Byer, Y. K. Park, R. S. Feigelson, and W. L. Kway

Appl. Phys. Lett. 39, 17 (1981); http://dx.doi.org/10.1063/1.92546 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
Warm phasematching LiNbO3 (Tpm ∼120 °C) has been used to achieve greater than 40% SHG efficiency of an acousto‐optic Q‐switched Nd:YAG laser. The growth of high‐quality LiNbO3 crystals suitable for efficient noncritical second‐harmonic generation is possible owing to the significantly lowered index damage annealing temperature.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.-b Laser applications

XeF excimer laser pumped in a longitudinal low‐pressure discharge

P. Burkhard, T. Gerber, and W. Lüthy

Appl. Phys. Lett. 39, 19 (1981); http://dx.doi.org/10.1063/1.92547 (2 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Results of a new excitation technique for excimer lasers are reported. The B→X band of Xef at 352 nm has been pumped in a longitudinal low‐pressure discharge. Low‐power, 20‐nsec laser pulses of high beam quality have been generated.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Band‐to‐band Auger recombination in InGaAsP lasers

Akira Sugimura

Appl. Phys. Lett. 39, 21 (1981); http://dx.doi.org/10.1063/1.92549 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
Band‐to‐band Auger recombination in InGaAsP lasers is studied theoretically. An approximation method for the calculation is derived and the Auger coefficient is given explicitly as a function of injected carrier density. Auger lifetime and the threshold current density for the InGaAsP laser are calculated with good agreement with reported experimental results. This shows that Auger recombination is one of the dominant factors which causes the poor temperature characteristics of InGaAsP laser threshold current.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Injected‐carrier induced refractive‐index change in semiconductor lasers

A. Olsson and C. L. Tang

Appl. Phys. Lett. 39, 24 (1981); http://dx.doi.org/10.1063/1.92550 (3 pages) | Cited 13 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
A red‐shift in the diode modes with increasing optical feedback is observed in external‐cavity AlxGa1−xAs injection lasers. This shift is due to a change in the refractive index in the active region resulting from a reduction in the population‐inversion induced by the optical feedback. This leads to a new determination of the carrier dependence of the refractive index at the laser wavelength in the active region of semiconductor lasers independent of current‐induced thermal effects.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.20.Jq Electro-optical effects

High‐power leaky‐mode multiple‐stripe laser

D. E. Ackley and R. W. H. Engelmann

Appl. Phys. Lett. 39, 27 (1981); http://dx.doi.org/10.1063/1.92551 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
A new multiple‐stripe injection laser has been developed. By fabricating a stripe array of buried heterostructures configured to operate in leaky modes, strong coupling is produced between the stripes leading to linear operation and stable output characteristics. Efficient utilization of the total emitting area results from leaky‐mode operation, and peak pulsed output powers to 1.5 W have been observed.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

Graded‐index Pt‐Al2O3 composite solar absorbers

H. G. Craighead, R. E. Howard, J. E. Sweeney, and R. A. Buhrman

Appl. Phys. Lett. 39, 29 (1981); http://dx.doi.org/10.1063/1.92552 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
The solar absorption properties of thin composite films of coevaporated Pt and Al2O3, formed with a graded composition‐depth profile, are compared to those of an identical film overcoated with a microscopically textured layer of SiOx. The composition grade of the metal‐dielectric composite and the surface texturing of the SiOx produces a film with a refractive index slowly varying to unity at the front surface. This results in a very low reflectance of the film. The solar absorptivity of this graded refractive index surface is shown to be a high as 0.98. The production and structure of these surfaces are described as well as a general method of absorptivity enhancement using a microscopically textured surface formed by reactive ion etching.
Show PACS
81.15.Jj Ion and electron beam-assisted deposition; ion plating
84.60.Jt Photoelectric conversion

12.8‐μm NH3 laser emission with 40–60% power conversion and up to 28% energy conversion efficiency

P. K. Gupta, A. K. Kar, M. R. Taghizadeh, and R. G. Harrison

Appl. Phys. Lett. 39, 32 (1981); http://dx.doi.org/10.1063/1.92553 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The characteristics of an extremely efficient 12.8‐μm NH3 laser utilizing a rather simple and versatile optical pumping arrangement are reported. CO2 laser pump to NH3 laser energy conversion efficiencies of up to 28%, very close to the theoretical limit of 33% for this system, and power conversion efficiencies of 40–60% have been achieved. Both the efficiencies are considerably higher than the best reported to date for this emission.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang, W. R. Holbrook, and P. E. Fraley

Appl. Phys. Lett. 39, 34 (1981); http://dx.doi.org/10.1063/1.92554 (4 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A statistical study of the self‐induced pulsation behavior of cw (AlGa)As double‐heterostructure (DH) (having Al0.08Ga0.92 As active layers) proton‐bombarded stripe lasers grown by molecular beam epitaxy (MBE) during accelerated aging at elevated (55 or 70 °C) temperatures is made and compared with that of similar lasers grown by liquid‐phase epitaxy (LPE). For the 5‐μm‐stripe, shallow proton‐bombarded (proton damage does not reach the active layer) stripe lasers, those fabricated from an MBE DH wafer studied show a significantly higher oscillation frequency (Fosc) of the self‐pulsation than those fabricated from LPE DH wafers. It is also shown that by going from 10‐μm‐stripe and deep proton‐bombarded (proton damage penetrates the active layer) to 5‐μm‐stripe and shallow proton‐bombarded stripe lasers, the Fosc are significantly higher even after an initial burn‐in at elevated temperatures (55 or 70 °C) for 100 h.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A tunable, ultrahigh‐spectral‐brightness ArF∗ excimer laser source

H. Egger, T. Srinivasan, K. Hohla, H. Scheingraber, C. R. Vidal, H. Pummer, and C. K. Rhodes

Appl. Phys. Lett. 39, 37 (1981); http://dx.doi.org/10.1063/1.92555 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
An extremely high spectral‐brightness ArF∗ 193‐nm excimer source with the following output pulse characteristics is described: ∼30‐mJ pulse energy, ∼5‐nsec pulse duration, spectral width less than 260 MHz, absolute frequency control to within 1.8 GHz, ∼5×15‐μrad beam divergence, and repetition rate up to 10 Hz. Within the uncertainty of measurement, the spectral width of the output radiation is Fourier transform limited and the beam divergence corresponds to the diffraction limit of the radiating aperture.
Show PACS
42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Surface acoustic wave frequency trimming of resonant and traveling‐wave devices on quartz

William J. Tanski

Appl. Phys. Lett. 39, 40 (1981); http://dx.doi.org/10.1063/1.92557 (3 pages)

Full Text: | Download PDF

Show Abstract
A procedure for the postfabrication frequency adjustment (trimming) of narrow‐band surface acoustic wave devices on quartz is described. This procedure utilizes selective etching of a quartz substrate by means of a tetrafluoromethane + oxygen (CF4+O2) plasma, to permanently change the physical configuration of the transducers by increasing the step height of metal electrode structures. An increase in energy storage at the step edges and an increase in transducer reflectivity (for resonators) contribute to a reduction in device frequency. This technique is simple, it may be readily implemented using several types of equipment, and the long‐term aging rate of a devce is not changed. The technique may be used for resonators, which may be trimmed by etching the transducers only, and with delay‐line type filters having any electrode configuration.
Show PACS
43.35.Pt Surface waves in solids and liquids
52.75.-d Plasma devices

Scaling studies in field reversal experiments

J. Lipson, W. T. Armstrong, J. C. Cochrane, K. F. McKenna, E. G. Sherwood, M. Tuszewski, and S. Hamasaki

Appl. Phys. Lett. 39, 43 (1981); http://dx.doi.org/10.1063/1.92558 (3 pages) | Cited 15 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The stable period of field‐reversed configurations, defined by the onset of the rotational n = 2 instability, is observed to scale with R2/ ρi over a new, wider range of experimental conditions, where R is the major radius and ρi is the ion gyro‐radius indexed to the external field. The scaling factor is approximately 6.0×10−7 sec cm−1 over a range of R2/ ρi from 18 to ∼100 cm in which 1/ ρi varied from 1 to 5 cm−1 and R varied by approximately 30%. In a complimentary study, the stable period was observed to be independent of Ti over a range of 200–1200 eV when R2/ ρi was held approximately constant. The theoretical correlation of the stable period with the particle containment time, and hence with R2/ ρi, are discussed.
Show PACS
52.55.Dy General theory and basic studies of plasma lifetime, particle and heat loss, energy balance, field structure, etc.

Plasma effects in the interaction of intense light ion beams with light targets

E. Nardi, E. Peleg, and Z. Zinamon

Appl. Phys. Lett. 39, 46 (1981); http://dx.doi.org/10.1063/1.92559 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
It is shown that with present‐day ion beam intensities, plasma effects on the range are important in light targets. It is suggested to use the strong dependence of Kα emission on particle energy in order to observe this effect in layered targets. Neutron diagnostics in the case of deuteron beam CD2 target interaction are also considered.
Show PACS
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.40.Mj Particle beam interactions in plasmas

Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers

N. Duhamel, P. Henoc, F. Alexandre, and E. V. K. Rao

Appl. Phys. Lett. 39, 49 (1981); http://dx.doi.org/10.1063/1.92533 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Photoluminescence investigation of several Be‐doped molecular beam epitaxy GaAs epilayers (including post‐epi‐growth‐annealed layers) revealed the presence of nonradiative recombination centers having the following properties. In low‐temperature (550 °C)‐grown layers their concentration is found to increase with Be acceptor concentration, while high‐temperature (640 °C)‐grown layers exhibited only a low concentration of these centers. Transmission electron microscope measurements on these layers showed the presence of extrinsic stacking faults involving interstitial atoms. Since this stacking faults density is also found to increase with doping level, we tentatively conclude that Be interstitial atoms are most likely participating in the formation of nonradiative centers.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.U- Doping and impurity implantation

Elemental arsenic in native oxide films on AlxGa1−xAs

G. P. Schwartz, B. V. Dutt, and G. J. Gualtieri

Appl. Phys. Lett. 39, 52 (1981); http://dx.doi.org/10.1063/1.92560 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Surface reflection Raman scattering has been used to detect the presence of elemental arsenic in native oxide films grown on epitaxial (100) AlxGa1−xAs layers. Oxide films formed either by direct thermal oxidation in air at 450 °C or by electrochemical anodization followed by thermal aging (450 °C, in vacuo) were both found to contain elemental arsenic. Anodic films which were not subjected to a heat treatment showed no evidence for elemental arsenic inclusions within the detection limits of the technique. These observations are consistent with the occurrence of a thermally induced interfacial reaction involving As2O3 in the anodic film and the substrate.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.35.Md Surface thermodynamics, surface energies
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

X‐ray imaging with a charge‐coupled device fabricated on a high‐resistivity silicon substrate

M. C. Peckerar, D. H. McCann, and Leepo Yu

Appl. Phys. Lett. 39, 55 (1981); http://dx.doi.org/10.1063/1.92561 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
In this letter results are reported on x‐ray imaging experiments performed with a buried channel charge‐coupled‐device line array optimized for photon sensing in the 1–10‐keV range. Optimization was achieved by increasing the depletion depth of the device to 254 μ. A near‐unity detector quantum efficiency (98%) was thus achieved. There was no observable image blurring due to diffusive spreading of signal charge as a result of the field‐assisted transport to the well minima.
Show PACS
29.40.Gx Tracking and position-sensitive detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling

Two‐carrier nature of interface‐state generation in hole trapping and radiation damage

S. K. Lai

Appl. Phys. Lett. 39, 58 (1981); http://dx.doi.org/10.1063/1.92514 (3 pages) | Cited 69 times

Full Text: | Download PDF

Show Abstract
In hole trapping and radiation damage in silicon dioxide, a characteristic interface‐state peak is present. It is shown by the present work that the interface peak is due to trapping of holes at the silicon‐silicon dioxide interface and the subsequent capture of injected electrons by the holes. It is postulated that dipolar complexes are formed, which give rise to electronic states at the interface. Similar dipoles may be responsible for neutral traps in the bulk of oxides after irradation.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
61.80.-x Physical radiation effects, radiation damage

New anomalous photocurrent peak of the TiO2−x thin film electrodes

Wha‐Tek Kim, Chu‐Hyun Choe, and Q. Won Choi

Appl. Phys. Lett. 39, 61 (1981); http://dx.doi.org/10.1063/1.92515 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
A titanium oxide thin film (TOTF) has been prepared by reaction of titanium sheet (99.9%, 1/2 mm thick) with water vapor at 600 °C. The electrical conductivity is n type, and the resistivity is of about 10 Ω cm. The photoelectroylsis reveals that the TOTF responds to the light of three‐spectral regions, one in 280–420 nm region corresponding to the well‐known TiO2 band and others centered at 490 and 589 nm, respectively, which are hitherto not reported. The latter are assigned to the subband gap states responsible for reducing oxygen molecules at the TOTF‐electrolyte interface.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
82.50.-m Photochemistry

The effect of atomic hydrogen passivation on polycrystalline silicon epitaxial solar cells

P. H. Robinson and R. V. D’Aiello

Appl. Phys. Lett. 39, 63 (1981); http://dx.doi.org/10.1063/1.92516 (2 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Solar cells fabricated in 20‐μm‐thick epitaxial layers grown on p+ polycrystalline upgraded metallurgical‐grade silicon substrates were subjected to atomic hydrogen passivation at 400 °C for 3 1/2 h. The measured solar‐cell characteristics show marked increases in open‐circuit voltage, fill factor, and efficiency after hydrogenation.
Show PACS
84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

X‐ray photoelectron spectroscopic studies on ZnO‐Sb2O3 varistors

S. R. Sainkar, S. Badrinarayanan, A. P. B. Sinha, and S. K. Date

Appl. Phys. Lett. 39, 65 (1981); http://dx.doi.org/10.1063/1.92517 (2 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
An x‐ray photoelectron spectroscopy study of ZnO‐Sb2O3 varistors was carried out in order to get an insight into the origin of the nonohmic behavior of the current‐voltage characteristics observed in this device. It is found that this behavior is due to the migration of Sb2O3 to the surface. This migration starts at 500 °C and reaches a maximum at 660 °C. Above 900 °C, there is a spinel formation (Zn7Sb2O12), which is confirmed by x‐ray diffraction and x‐ray photoelectron data.
Show PACS
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
81.65.-b Surface treatments
72.80.Jc Other crystalline inorganic semiconductors
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close