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15 Nov 1981

Volume 39, Issue 10, pp. 783-850

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Line narrowing and enhanced efficiency of an HgBr laser by injection locking

T. Shay, F. Hanson, D. Gookin, and E. J. Schimitschek

Appl. Phys. Lett. 39, 783 (1981); http://dx.doi.org/10.1063/1.92582 (3 pages) | Cited 10 times

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The results of HgBr laser injection locking experiments are presented. The output energy and spectrum of an injection locked HgBr laser has been measured versus injection wavelength. When injection locking near 502 nm, the narrow band (0.05‐nm FWHM) output energy was 30% higher than the broadband HgBr laser output. The wall plug efficiency of the injection locked HgBr laser is 1.3%.
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42.60.By Design of specific laser systems
33.20.Kf Visible spectra
42.72.-g Optical sources and standards

Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 39, 786 (1981); http://dx.doi.org/10.1063/1.92583 (3 pages) | Cited 100 times

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It is shown that by modifying the layer structures of the conventional multiquantum well (MQW) lasers, extremely low Jth of 250 A/cm2 (averaged value) for broad‐area Fabry–Perot diodes of 200×380 μm was obtained. This was achieved as a result of utilizing the beneficial effects of the two‐dimensional nature of the confined carriers, the improved injection efficiency of the carriers into the GaAs wells, and an increased optical confinement factor in these modified MQW lasers. It was also determined that for low threshold operation the optimal AlAs composition x in the AlxGA1−xAs barrier layers is about 0.19 when GaAs wells are used and for barrier and well thicknesses ≳30 and 100 Å, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Longitudinal mode control in GaAs lasers using a three‐mirror active‐passive cavity

E. Garmire, G. Evans, and J. Niesen

Appl. Phys. Lett. 39, 789 (1981); http://dx.doi.org/10.1063/1.92584 (3 pages) | Cited 3 times

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Integrated optics techniques have been used to form a three‐mirror laser diode configured to form a long active cavity and a short passive cavity. The third mirror results from an abrupt etched step down to the waveguide layer of a large optical cavity heterostructure laser. We have observed predominantly single‐frequency operation at current levels up to 1.5 times threshold. For certain ratios of passive‐to‐active cavity length, these devices operated multimode within a narrow frequency range, whereas diodes with different length ratios emit two modes widely separated in frequency.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Liquid phase epitaxial growth of cadmium‐doped InGaAsP/InP double heterostructure lasers

N. Tamari

Appl. Phys. Lett. 39, 792 (1981); http://dx.doi.org/10.1063/1.92585 (3 pages) | Cited 6 times

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Cadmium‐doped InGaAsP/InP double heterostructure lasers (λ∼1.3 μm) have been made for the first time with threshold current densities as low as 1 kA/cm2. The low diffusion rate and distribution coefficient of cadmium facilitate locating the p‐n junction reproducibly at the active region. High yield from a given wafer and a very uniform performance in a wide range of dopant concentrations are observed. The high vapor pressure of the Cd which has deterred previous investigations of this dopant does not seem to be a problem under the conditions used.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology

Interferometric determination of the sound speed in magnetized plasma using time‐delayed correlation techniques

A. R. Jacobson

Appl. Phys. Lett. 39, 795 (1981); http://dx.doi.org/10.1063/1.92586 (3 pages) | Cited 8 times

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Time‐delayed correlation measurements with a CO2 laser, multichord plasma interferometer show density perturbations propagating along the local magnetic field in the edge region of the ZT‐40M reversed field pinch. The observed speed is consistent with ion‐acoustic propagation. Such measurements of field‐parallel waves with long wavelength (λ∥ ≳several centimeters) may provide a quasilocal, quasi‐cw diagnostic of the sound speed in many low β magnetically confined plasmas, useful in estimating plasma temperatures.
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42.25.Lc Birefringence
42.25.Gy Edge and boundary effects; reflection and refraction
52.35.Dm Sound waves

Oxide optimization at the p‐Si/aqueous electrolyte interface

H. J. Lewerenz, M. Lübke, K. J. Bachmann, and S. Menezes

Appl. Phys. Lett. 39, 798 (1981); http://dx.doi.org/10.1063/1.92587 (3 pages) | Cited 12 times

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In this letter we report a combination of surface chemical and voltammetric treatments that optimize the stability and performance of p‐Si/V2+−V3+, 4MHCl/C solar cells. The power conversion efficiency is 6.1% under 60‐mW/cm2 illumination. The results of capacitance‐voltage measurements and the improved solar cell properties are discussed on the basis of an electrolyte‐oxide‐semiconductor energy band diagram.
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73.40.Mr Semiconductor-electrolyte contacts
84.60.Jt Photoelectric conversion

The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs

Y. G. Chai, R. Chow, and C. E. C. Wood

Appl. Phys. Lett. 39, 800 (1981); http://dx.doi.org/10.1063/1.92562 (4 pages) | Cited 87 times

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The unity sticking coefficient of Si and the good electrical and optical properties of Si‐doped films make Si a near ideal dopant for GaAs grown by molecular beam epitaxy (MBE). However, the incorporation mechanism of Si at high doping levels differs from that at moderate levels. We found that the maximum doping concentration that can be obtained with Si is 6×1018 cm−3. Above this doping concentration Si precipitates, causing a decrease in the free‐carrier concentration and the mobility. A detailed discussion of the incorporation mechanism at high doping, and the effects of the substrate temperature and As4/Ga ratio on Si incorporation at moderate doping is presented.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Thin‐film gallium arsenide homojunction solar cells

Shirley S. Chu, T. L. Chu, F. S. Zhang, L. Book, and J. M. Yu

Appl. Phys. Lett. 39, 803 (1981); http://dx.doi.org/10.1063/1.92563 (3 pages)

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Thin‐film homojunction gallium arsenide solar cells of p+/n/n+ configuration have been deposited on tungsten coated graphic substrates by the reaction of gallium, hydrogen chloride, and arsine containing appropriate dopants. Solar cells of 8‐cm2 area with an AM1 efficiency of about 7% have been prepared for the first time. The solar cells are characterized by dark and illuminated current‐voltage and quantum efficiency measurements.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Pair transitions in Zn3P2

Fernando Briones, Faa‐Ching Wang, and Richard H. Bube

Appl. Phys. Lett. 39, 805 (1981); http://dx.doi.org/10.1063/1.92564 (3 pages) | Cited 11 times

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Laser‐excited photoluminescence emission has been measured from 2.5 to 100 °K for single crystals of Zn3P2 grown either by sublimation or by iodine chemical transport. Sublimation‐grown crystals show two main peaks at 1.361 and 1.354 eV at 2.5 °K, each of which has a phonon replica displaced by 43 meV, and a third much smaller peak observable only above 20 °K at 1.367 eV. Iodine‐transport grown crystals show a broad peak at 2.5 °K at 1.320 eV and its phonon replica displaced by 42 meV. The photon energy for peak emission shifts with excitation intensity as is typical of pair transitions, for the major bands seen at 2.5 °K. Temperature dependence measurements identify the donor and acceptor ionization energies corresponding to each of these bands.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
63.20.K- Phonon interactions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Reduction in dislocation densities in the step‐graded growth of InGaAs by molecular‐beam epitaxy

C. M. Serrano and Chin‐An Chang

Appl. Phys. Lett. 39, 808 (1981); http://dx.doi.org/10.1063/1.92565 (2 pages) | Cited 9 times

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The effect of varying compositional gradient on the propagation of misfit dislocations in the step‐graded molecular‐beam epitaxy growth of InGaAs is studied by cross‐sectional transmission electron microscopy. For a composition change of 15% across the interface, the misfit dislocations are almost all confined to the interface and few defects are observed in the InGaAs layer grown. The confinement of misfit dislocations at the interfaces becomes less effective for the 5% cases; a new phenomenon of stress relieving is observed where a high‐density center of inclined dislocations is formed which leaves a large neighboring area with very low density of defects.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon

A. Lietoila, R. B. Gold, and J. F. Gibbons

Appl. Phys. Lett. 39, 810 (1981); http://dx.doi.org/10.1063/1.92566 (3 pages) | Cited 13 times

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The rate of cw laser induced solid phase epitaxy in self‐implantation amorphized silicon has been measured by determining the dwell time required to regrow the entire amorphous layer at the center of a scanned laser beam. The measurement was performed in the annealing temperature range of 800–900 °C. The measured regrowth rates were about two orders of magnitude higher than those extrapolated from low‐temperature furnace annealing data.
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64.70.K- Solid-solid transitions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
79.20.Ds Laser-beam impact phenomena

The effect of electroabsorption on the determination of ionization coefficients

G. E. Bulman, L. W. Cook, and G. E. Stillman

Appl. Phys. Lett. 39, 813 (1981); http://dx.doi.org/10.1063/1.92567 (3 pages) | Cited 2 times

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It has been shown through attempts to obtain pure carrier injection for the determination of electron and hole impact ionization rates (α and β) that electroabsorption of recombination radiation can result in significant contamination of the injected currents in direct band‐gap semiconductors. The influence of this contamination on the values determined for α and β and the requirements on the device structure to minimize this contamination are discussed.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.60.Dw Photodiodes; phototransistors; photoresistors

Dynamical x‐ray reflection at terraces in epitaxial layers

Shih‐Lin Chang

Appl. Phys. Lett. 39, 816 (1981); http://dx.doi.org/10.1063/1.92568 (2 pages)

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Terrace formation in semiconductor epitaxial layers has been postulated to cause lattice bending, which ought to be observable by x‐ray diffraction. Consideration of dynamical effects of x‐ray reflection, both at the terraces and from a distorted crystal lattice, shows that diffraction effects by far outweigh the effects of lattice bending. For a given liquid phase epitaxial GaAs layer on a GaAs substrate, the lattice bending is estimated to be less than 10−5 rad.
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61.05.C- X-ray diffraction and scattering
68.55.-a Thin film structure and morphology

Electron tunneling in Si‐SiO2‐Al structures: A comparison between 〈100〉 oriented and 〈111〉 oriented Si

Gadi Krieger and Richard M. Swanson

Appl. Phys. Lett. 39, 818 (1981); http://dx.doi.org/10.1063/1.92569 (2 pages) | Cited 11 times

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Si‐SiO2‐Al capacitors were fabricated on both 〈100〉 and 〈111〉 oriented Si. The electron tunneling current from the Si accumulation layer was measured in the Fowler–Nordheim region. Comparing the current versus electric field for both crystal orientations, tunneling current is appreciably higher in 〈100〉 oriented than in 〈111〉 oriented capacitors. An explanation is suggested based on the conservation of transverse crystal momentum. The result implies that metal‐oxide‐semiconductor transistors fabricated on 〈111〉 oriented Si might be less susceptible to oxide injected charge instabilities than those fabricated on 〈100〉 oriented Si.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Small‐area high‐speed InP/InGaAs phototransistor

J. C. Campbell, C. A. Burrus, A. G. Dentai, and K. Ogawa

Appl. Phys. Lett. 39, 820 (1981); http://dx.doi.org/10.1063/1.92570 (2 pages) | Cited 5 times

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We describe the fabrication and characteristics of a small‐area (diameter ≃20 μm) InP/InGaAs heterojunction phototransistor, a promising photodetector/preamplifier for long‐wavelength optical receivers. The high sensitivity (hfe ≃100 at 20‐nW incident power) and small junction capacitance (≲0.2 pF) of the device combine to produce a gain‐bandwidth product in excess of 1.7 GHz.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Electrical characteristics of Al contact to NiSi using thin W layer as a barrier

M. Bartur and M‐A. Nicolet

Appl. Phys. Lett. 39, 822 (1981); http://dx.doi.org/10.1063/1.92571 (3 pages) | Cited 6 times

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We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to 〈Si〉 can be removed by introducing a very thin (∼250 Å) tungsten film between the Al and the NiSi layers. This structure can be formed by sequential evaporation of Ni, W, and Al and subsequent thermal annealing to form NiSi. Schottky barrier measurements show that the contact is thermally stable at 450 °C up to about 1‐h annealing with very little change in the electronic barrier height. A model, derived from the electrical measurements, is proposed for the failure mode of the tungsten barrier after excessive annealing.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.30.Hi Surface barrier, boundary, and point contact devices

Electrical properties of laser chemically doped silicon

T. F. Deutsch, D. J. Ehrlich, D. D. Rathman, D. J. Silversmith, and R. M. Osgood

Appl. Phys. Lett. 39, 825 (1981); http://dx.doi.org/10.1063/1.92572 (3 pages) | Cited 32 times

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The electrical properties of single‐crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3 or PCl3 parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can supplement photolysis of gas‐phase molecules as a source of doping atoms.
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61.72.U- Doping and impurity implantation
42.62.-b Laser applications

A novel method for high resolution observation of magnetic structures in superconductors

Peter L. Stöhr

Appl. Phys. Lett. 39, 828 (1981); http://dx.doi.org/10.1063/1.92573 (2 pages) | Cited 6 times

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The magnetic structure of a superconductor in the intermediate state is imaged to a resolution of <0.9 μm using the response of the superconductor to electron beam irradiation.
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74.90.+n Other topics in superconductivity (restricted to new topics in section 74)

Chaos and noise rise in Josephson junctions

N. F Pedersen and A. Davidson

Appl. Phys. Lett. 39, 830 (1981); http://dx.doi.org/10.1063/1.92574 (3 pages) | Cited 84 times

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Digital computer simultations have been used to map parameters of the transition to chaos in an rf current driven Josephson junction. Our results are qualitatively like those reported by others using analog techniques, but differ quantitatively. Our calculations show that the parameters for the onset of chaos are the same as those required for high parametric gain. This leads to the conclusion that the ’’noise rise’’ in Josephson junction parametric amplifiers is due to chaos.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

New relaxation peaks at liquid helium temperatures due to the motion of hydrogen in trap sites around Ti in Nb

G. Cannelli, R. Cantelli, and G. Vertechi

Appl. Phys. Lett. 39, 832 (1981); http://dx.doi.org/10.1063/1.92575 (3 pages) | Cited 11 times

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The presence of hydrogen in niobium containing 5 at. % alloying titanium gives rise to new relaxation processes at liquid helium temperatures. The effects have been studied for two H concentrations (0.08 and 0.48 at. %), and by exciting two resonance modes of the specimen (20 and 74.5 kHz). The temperatures at which the processes occur are independent of H content and their intensities increase with increase of the H concentration. At the lower resonance frequency the peaks shift towards lower temperatures and their intensities markedly decrease. This latter behavior may be explained by a delocalized tunneling model for hydrogen trapped by Ti.
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62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
63.20.kp Phonon-defect interactions
66.30.J- Diffusion of impurities

Fine structure of voltage levels in the I‐V characteristics of the rf SQUID’s

E. Ben‐Jacob and D. Abraham

Appl. Phys. Lett. 39, 835 (1981); http://dx.doi.org/10.1063/1.92576 (3 pages) | Cited 5 times

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Results of digital numerical calculations of the rf‐(SQUID) superconducting quantum interference device dynamics and I‐V characteristics are presented. Fine structure of voltage levels in the I‐V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Bubble states in a contiguous disk magnetic bubble device

Susumu Konishi and Minoru Tamura

Appl. Phys. Lett. 39, 838 (1981); http://dx.doi.org/10.1063/1.92577 (3 pages)

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Bubble states in a contiguous disk 2‐μm bubble device have been studied using the dynamic bubble collapse method. We found at least three different bubble states, and two of them, soft and hard bubbles, showed 12.4 Oe of bias field margin for dynamic bubble collapse discrimination. The bubble state stability studied for a 100‐Hz drive in‐plane field appears fair, suggesting that the wall encoding scheme is also possible as in the conductor drive or Permalloy bubble devices. The wall structure of these three kinds of bubbles are discussed, and appears to be S = 1/2 (hard), S = (122) (soft), and S = 1H (intermediate), all having an umbrella cap.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure

Magnetic properties of amorphous and crystallized (Fe0.82B0.18)0.9Tb0.05La0.05

N. C. Koon and B. N. Das

Appl. Phys. Lett. 39, 840 (1981); http://dx.doi.org/10.1063/1.92578 (3 pages) | Cited 37 times

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The magnetic properties of (Fe0.82B0.18)0.9Tb0.05La0.05 in both the amorphous and crystallized states are presented. When amorphous, the alloy is magnetically soft and has a low coercive force, comparable to the corresponding alloy without rare earths. Upon annealing near the crystallization temperature of 900 K, however, the intrinsic coercive force at 300 K rises to 9 kOe, with a remanent magnetization of slightly less than 5 kG. In the amorphous state this and related alloys appear to have potential for use in devices requiring large, isotropic magnetostriction, while in the crystallized state they appear potentially useful as low cobalt permanent magnets.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Vv High coercivity materials
75.80.+q Magnetomechanical effects, magnetostriction
75.60.Nt Magnetic annealing and temperature-hysteresis effects

Cube‐root broadening of surface‐charge packets

K. K. Thornber, D. F. Nelson, and J. A. Cooper

Appl. Phys. Lett. 39, 843 (1981); http://dx.doi.org/10.1063/1.92579 (3 pages) | Cited 9 times

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The width of a surface‐charge packet in the proximity of a conducting sheet increases asymptotically only as the cube root of the time due to space‐charge repulsion. By contrast, thermal diffusion broadens as the square root of the time, and is otherwise negligible here. The cube‐root behavior is invariant over a wide range of transverse and normal electric fields, and may have significant implications for the minimum spatial variation of charge density achievable in devices.
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72.20.Ht High-field and nonlinear effects
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Coherent radiation from a relativistic electron beam in a longitudinal, periodic magnetic field

W. A. McMullin and G. Bekefi

Appl. Phys. Lett. 39, 845 (1981); http://dx.doi.org/10.1063/1.92580 (3 pages) | Cited 28 times

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The longitudinal wiggler, beam interaction is a novel source of submillimeter wave radiation. It comprises a relativistic electron beam gyrating in a longitudinally rippled, periodic magnetic field of the form B = z[B0+B1 sin(k0 z)], where k0 = 2π/l and l is the period. Axial and transverse electron density bunching gives rise to a convectively unstable wave that propagates along the guiding magnetic field zB0. Its growth rate has been computed for the case of a cold beam.
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42.55.-f Lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.27.Ny Relativistic plasmas
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