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1 Dec 1981

Volume 39, Issue 11, pp. 855-929

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Amplified phase conjugate reflection of KrF laser radiation

R. G. Caro and M. C. Gower

Appl. Phys. Lett. 39, 855 (1981); http://dx.doi.org/10.1063/1.92610 (3 pages) | Cited 11 times

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We report amplified phase conjugate reflection of KrF laser radiation at 249 nm using degenerate four‐wave mixing in a solution of rhodamine 6G in ethanol. Reflectivities of ∼300% have been measured. Saturation of the reflectivity at high probe intensities was observed and the temporal dependence of the reflectivity has been investigated. The importance of mutual coherence of the probe and pump for the thermally induced nonlinearity involved in the process has been demonstrated.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.30.Va Image forming and processing
42.65.-k Nonlinear optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Sub‐Doppler submillimeter spectroscopy using molecular beams

W. A. M. Blumberg, D. D. Peck, and H. R. Fetterman

Appl. Phys. Lett. 39, 857 (1981); http://dx.doi.org/10.1063/1.92611 (3 pages) | Cited 1 time

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The use of corner‐cube mounted Schottky diodes to generate tunable submillimeter laser sidebands, which have a linewidth less than 10 kHz, has recently been reported. In order to demonstrate the ultrahigh resolution of the sideband generation technique, rotational transitions with sub‐Doppler linewidths have been observed in molecular beams formed by capillary arrays.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
33.15.Mt Rotation, vibration, and vibration-rotation constants

The effect of cavity length on picosecond pulse generation with highly rf modulated AlGaAs double heterostructure lasers

G. J. Aspin, J. E. Carroll, and R. G. Plumb

Appl. Phys. Lett. 39, 860 (1981); http://dx.doi.org/10.1063/1.92612 (2 pages) | Cited 17 times

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We report the generation of picosecond pulses with oxide‐isolated‐stripe, double heterostructure GaAlAs laser diodes of varying lengths. A pulse width of 15 ps at a repetition frequency of 1 GHz is achieved with a 60‐μm‐long device. The experiments indicate a linear relation between pulse width and laser length.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Autosynchronized pulse generation at multiple wavelengths

P. Rabinowitz, B. Perry, and A. Gnauck

Appl. Phys. Lett. 39, 862 (1981); http://dx.doi.org/10.1063/1.92588 (3 pages) | Cited 6 times

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Efficient autosynchronization of Raman scattered Stokes pulses of different wavelengths is obtained from a hydrogen filled multiple pass cell. The phenomenon is initiated by colinear four‐wave mixing and develops through Raman scattering at ray crossings within the cell structure.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Absorption and stimulated emission in an AlAs‐GaAs superlattice

J. J. Coleman, P. D. Dapkus, D. R. Clarke, M. D. Camras, and N. Holonyak

Appl. Phys. Lett. 39, 864 (1981); http://dx.doi.org/10.1063/1.92613 (3 pages) | Cited 12 times

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Absorption and stimulated‐emission data (77 and 300 K) are presented on a 50‐period, all binary A1As‐GaAs superlattice (SL) grown by metalorganic chemical vapor deposition (MO‐CVD). Laser operation of the SL is observed ΔE∼hωLO below the absorption, which corresponds accurately to the lowest confined‐particle transistions determined from the measured (transmission electron microscope, TEM) barrier and well sizes of LB ∼120 Å and Lz ∼160 Å.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology

Generation of subpicosecond pulses from an actively mode locked GaAs laser in an external ring cavity

J. P. van der Ziel, R. A. Logan, and R. M. Mikulyak

Appl. Phys. Lett. 39, 867 (1981); http://dx.doi.org/10.1063/1.92614 (3 pages) | Cited 23 times

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We report the active mode locking of the emission from a GaAs buried optical guide laser in an external ring cavity. The two counter rotating pulses interact in the laser which in addition to the gain medium contains a saturable absorber at one facet introduced by proton bombardment at 600 keV with a 3×1015 cm−2 dosage level. Bursts of pulses with 0.56 psec FWHM at a 625‐MHz repetition rates have been obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking

Optical Ramsey fringes: Effect of velocity averaging on fringe shape and position

G. P. Bava and A. De Marchi

Appl. Phys. Lett. 39, 869 (1981); http://dx.doi.org/10.1063/1.92615 (3 pages) | Cited 1 time

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A theoretical analysis of Ramsey fringes produced by the interaction of a molecular beam and a three‐zones electromagnetic resonator is reported. After averaging over the longitudinal velocity distribution of the particles, the relation between the fringe envelope width and the velocity distribution width is discussed. If the second‐order Doppler shift is introduced, the fringe envelope displacement is found to be of the same amount expected for the second‐order Doppler effect, but in the opposite direction. This analysis can be of some interest for the discussion of the performance of beam frequency standards in the near optical region.
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03.50.De Classical electromagnetism, Maxwell equations

Longitudinal mode behavior of PbSnTe buried heterostructure lasers

D. Kasemset and C. G. Fonstad

Appl. Phys. Lett. 39, 872 (1981); http://dx.doi.org/10.1063/1.92589 (3 pages) | Cited 4 times

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Output spectra for narrow stripe, PbSnTe buried heterostructure laser diodes are presented and it is shown that the lasers operate in a single longitudinal mode of the fundamental transverse mode family to approximately twice threshold after which multimode operation predominates. These observations are interpreted in terms of the spectral inhomogeneity of the gain function. The small inhomogeneity arises from an intraband relaxation time of the order of 2 ps.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
78.45.+h Stimulated emission

Deterministic passive mode locking of solid‐state lasers

Oscar Eduardo Martínez and Luis Alfonso Spinelli

Appl. Phys. Lett. 39, 875 (1981); http://dx.doi.org/10.1063/1.92590 (3 pages) | Cited 3 times

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An additional passive modulation is inserted in the cavity of a passive mode‐locked Nd:glass laser in order to provide the conditions for a complete selectivity of the system. A rate equation approach shows that a stationary condition is reached in which only one pulse of the original fluctuation pattern is left. Computed simulations and experimental results are also shown confirming the theoretical predictions.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers

Aluminum nitride on silicon surface acoustic wave devices

L. G. Pearce, R. L. Gunshor, and R. F. Pierret

Appl. Phys. Lett. 39, 878 (1981); http://dx.doi.org/10.1063/1.92591 (2 pages) | Cited 8 times

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Reactive rf planar magnetron sputtering has been used at substrate temperatures below 300 °C to deposit highly oriented piezoelectric AlN films on silicon for surface acoustic wave device applications. The substrates were (100)‐oriented, n‐type silicon with and without a thermally grown oxide. Several new AlM‐on‐silicon surface acoustic wave devices were fabricated and tested. The devices reported herein include two‐port delay lines, degenerate monolithic convolvers, and two‐port surface acoustic wave resonators utilizing metal strip reflector arrays.
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43.35.Pt Surface waves in solids and liquids
43.38.Fx Piezoelectric and ferroelectric transducers
85.90.+h Other topics in electronic and magnetic devices and microelectronics (restricted to new topics in section 85)

Photoacoustic microscopy with a new modulation technique

R. S. Quimby

Appl. Phys. Lett. 39, 880 (1981); http://dx.doi.org/10.1063/1.92592 (3 pages) | Cited 2 times

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A new type of photoacoustic microscopy is described in which the beam position, rather than the beam intensity, is modulated. It is demonstrated experimentally that the new technique provides greater detail and contrast than conventional photoacoustic microscopy.
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81.70.-q Methods of materials testing and analysis
42.79.Hp Optical processors, correlators, and modulators
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Compression of an intense space‐charge‐neutral ion beam by an axial magnetic field

Scott Robertson

Appl. Phys. Lett. 39, 883 (1981); http://dx.doi.org/10.1063/1.92593 (3 pages) | Cited 2 times

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An intense, space‐charge‐neutral beam of protons (150 kV, 15 A/cm2) has been compressed from an initial diameter of 15 cm to a final diameter of 5 cm by propagating it along a magnetic field increasing from zero to 700 G in a distance of 55 cm. At the field maximum, the beam intensity is increased by a factor of 4 over the value with no field. When viewed from the beam frame, the experiment is analogous to a theta pinch with an applied field whose time derivative is v(dB/dx), where v is the beam velocity and dB/dx is the magnetic gradient. The surface of the beam moves radially inward at approximately the velocity predicted by the snowplow model.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

Ion beam range shortening and the possibility of thermal instability

Stephen A. Slutz and Thomas A. Mehlhorn

Appl. Phys. Lett. 39, 885 (1981); http://dx.doi.org/10.1063/1.92594 (3 pages) | Cited 2 times

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The range of an ion can be decreased when the deposition material is heated because of the greater stopping power of free electrons over bound electrons. This suggests the possibility that a medium heated by an intense ion beam might suffer a thermal instability. It is shown that such an instability should not be important over the regimes of interest for ion beam fusion.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects

New type of pulsed ion source with cryogenic anode

K. Kasuya, K. Horioka, T. Takahashi, A. Urai, and M. Hijikawa

Appl. Phys. Lett. 39, 887 (1981); http://dx.doi.org/10.1063/1.92595 (2 pages) | Cited 5 times

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A magnetically insulated diode with a cryogenically refrigerated anode is proposed and a prototype of such a diode is constructed. H2O ice is produced on an anode which is cooled with liquid nitrogen. A small machine, consisting of a marx generator and a blumlein line, is used to extract ion beams from the diode. Proton beams of about 50 A and 70 keV are obtained with good reproducibility. Diode electrical characteristics and the extracted beam performance are also examined.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.75.Di Ion and plasma propulsion
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

The nonlinear propagation constant of a surface plasmon

Dror Sarid

Appl. Phys. Lett. 39, 889 (1981); http://dx.doi.org/10.1063/1.92596 (3 pages) | Cited 8 times

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A surface plasmon that is excited on the interface separating a metal and a nonlinear semiconductor has a propagation constant that depends on the power carried by the plasmon. We present an analytic expression for the change in the propagation constant of the plasmon, KΔβ, as a function of the dielectric constants of the two media, the nonlinear refractive index of the semiconductor, n2,E, and the power carried by the plasmon. We define a figure of merit, P0, which is the power required for shifting the phase of the plasmon by π/2 along a distance S, (S = 1/2α, where α is the plasmon decay constant), and find the wavelength dependence of KΔβ and P0.
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42.65.-k Nonlinear optics
68.35.Ja Surface and interface dynamics and vibrations
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Structure and compression of crystalline argon and neon at high pressure and room temperature

L. W. Finger, R. M. Hazen, G. Zou, H. K. Mao, and P. M. Bell

Appl. Phys. Lett. 39, 892 (1981); http://dx.doi.org/10.1063/1.92597 (3 pages) | Cited 58 times

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Argon and neon crystallize in the face‐centered cubic structure (Fm3m, z = 4) at 11.5±0.5 and 47.4±0.5 kbar, respectively, at 293 K. Single‐crystal cell dimensions were obtained at 82 kbar for argon and 144 kbar for neon with high‐pressure, x‐ray diffraction techniques. The data were corrected to 0 K and fitted to a second‐order Murnaghan equation of state with V0 and K0 constrained to results obtained in low‐temperature experiments. No solid‐solid phase transitions are observed to the highest pressures studied.
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62.50.-p High-pressure effects in solids and liquids
61.66.Bi Elemental solids
64.70.D- Solid-liquid transitions
64.30.-t Equations of state of specific substances

A gallium phosphide high‐temperature bipolar junction transistor

T. E. Zipperian and L. R. Dawson

Appl. Phys. Lett. 39, 895 (1981); http://dx.doi.org/10.1063/1.92598 (3 pages) | Cited 7 times

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Transistor action at temperatures from 20 to 450 °C has been demonstrated for p+n−pp+ bipolar structures fabricated in GaP. Improvements in the materials technology were essential to successful fabrication of these devices. The structural configuration chosen could also be used as a junction field‐effect transistor although this mode of operation was limited by the initial design to lower operating temperatures. While present device characteristics are restricted by ohmic contact resistance, this does not appear to be a fundamental limitation. These results demonstrate that GaP is a good materials candidate in which to base a technology for active electronic components operated at high temperatures.
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85.30.Pq Bipolar transistors
68.55.-a Thin film structure and morphology
85.30.De Semiconductor-device characterization, design, and modeling

Carrier mobility in polycrystalline semiconductors

K. Ram Kumar and M. Satyam

Appl. Phys. Lett. 39, 898 (1981); http://dx.doi.org/10.1063/1.92599 (3 pages) | Cited 15 times

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This letter presents a modified version of the grain boundary barrier model for polycrystalline semiconductors which takes into account the carrier transport in the bulk of the grain and the dynamic process of capture and release of free carriers by the grain boundary traps.
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72.80.Cw Elemental semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance

Electromigration in aluminum/poly‐silicon composites

S. Vaidya

Appl. Phys. Lett. 39, 900 (1981); http://dx.doi.org/10.1063/1.92600 (3 pages) | Cited 2 times

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A composite metallization of Al over doped poly‐Si should exhibit superior electromigration resistance, since even after the Al develops an open circuit, the poly‐Si would be expected to provide electrical continuity. However, results indicate that poly‐Si reduces the lifetime of Al by a ×2 and a further decrease occurs over stepped topographies. Thus, while electron beam evaporated Al/poly‐Si exhibits acceptable lifetimes, induction‐source Al/poly‐Si may be only marginal in this regard. Failures occur predominantly at steps by nonuniform grain boundary diffusion in Al, until the metal opens up. This followed by the electromigration of Si into Al and localized melting.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

Oxidant transport during steam oxidation of silicon

J. C. Mikkelsen

Appl. Phys. Lett. 39, 903 (1981); http://dx.doi.org/10.1063/1.92601 (3 pages) | Cited 13 times

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Secondary ion mass spectrometry was used to measure the 18O profiles in thermally grown SiO2 which had been treated in H2 18O steam. The oxygen isotope exchange between the water and the network proceeds rapidly at 800 °C, completely exchanging a 180‐nm film in ∼20 min. Even at 400 and 600 °C, where negligible Si oxidation occurs, the network oxygen can be completely isotopically exchanged. The exchange profiles are analyzed in terms of the competing reactions involving water molecules and the SiO2 network. Similar measurements of the deuterium (D) profiles in D2O‐treated films are consistent with diffusion of molecular water and its reaction with the network to transport both hydrogen and oxygen through the thermal oxide. Our results are compared to related studies which used 18O nuclear resonance analysis.
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68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing

T. J. Magee, H. Kawayoshi, R. D. Ormond, L. A. Christel, J. F. Gibbons, C. G. Hopkins, C. A. Evans, and D. S. Day

Appl. Phys. Lett. 39, 906 (1981); http://dx.doi.org/10.1063/1.92602 (3 pages) | Cited 24 times

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Using the Boltzmann transport equation, calculations were obtained predicting the zones of stoichiometric imbalance produced in GaAs after ion implantation at energies of 50, 100, and 300 keV. The recoiling Ga and As atoms were shown to produce a zone of interstitials at depths exceeding Rp . Secondary‐ion mass spectrometry profiling indicated that Cr was rapidly redistributed into these regions at temperatures ⩽500 °C. Transmission electron microscopic analyses obtained on horizontally sectioned and vertical cross section samples indicated that the interstitials coalesced into small clustered sites (50–100 Å) and were responsible for the development of Cr gettering at depths ≳Rp .
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Yx Interaction between different crystal defects; gettering effect

n‐channel deep‐depletion metal‐oxide‐semiconductor field‐effect transistors fabricated in zone‐melting‐recrystallized polycrystalline Si films on SiO2

B‐Y. Tsaur, M. W. Geis, John C. C. Fan, D. J. Silversmith, and R. W. Mountain

Appl. Phys. Lett. 39, 909 (1981); http://dx.doi.org/10.1063/1.92603 (3 pages) | Cited 8 times

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n‐channel deep‐depletion mode metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) have been fabricated in Si films prepared by zone‐melting recrystallization of chemical‐vapor deposited (CVD) polycrystalline Si deposited on SiO2‐coated Si substrates. The transistors exhibit surface electron mobility in the range of 600–700 cm2/Vs, comparable to values for devices fabricated in single‐crystal Si. Measurements of electron mobility as a function of gate bias voltage indicate that the mobility is nearly constant throughout the depth of the recrystallized Si films. Mobility of 650–700 cm2/Vs at the lower Si‐SiO2 interface and subthreshold source‐drain leakage current of a few pA/μm (channel width) have been measured.
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68.55.-a Thin film structure and morphology
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration

H. L. Störmer, A. C. Gossard, W. Wiegmann, and K. Baldwin

Appl. Phys. Lett. 39, 912 (1981); http://dx.doi.org/10.1063/1.92604 (3 pages) | Cited 91 times

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The electron mobility of single modulation‐doped GaAs‐(AlGa)As heterojunctions is strongly dependent on electron density and Al concentration. A low‐temperature persistent photoconductive effect is employed to vary the areal electron density continuously within a single sample by nearly a factor of 3. Over this density range the mobility increases monotonically by as much as a factor of 4, quasilinear with density. At equivalent carrier concentrations heterojunctions with lower Al concentration show higher mobilities. At low temperatures a peak mobility of 365 000 cm2/Vs is found at an areal density of 7.0×1011 cm−2 with an interparticle spacing equivalent to a three‐dimensional density of 5.9×1017 cm−3.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects

Au on Si (111): A study of the interface under UHV conditions and its modifications in air by surface techniques and MeV ion scattering

J. Derrien, C. Cohen, A. Cros, J. M. Layet, F. Salvan, F. Abel, J. C. Boulliard, J. L. Domange, and M. Sotto

Appl. Phys. Lett. 39, 915 (1981); http://dx.doi.org/10.1063/1.92605 (3 pages) | Cited 8 times

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Auger and electron loss spectroscopies, low energy electron diffraction (LEED) and depth profiling techniques have been applied to the study of the Au/Si (111) interface under UHV conditions. The results, obtained at room temperature, show the formation on top of the substrate of (i) a diffuse and alloyed interface of ∼15‐Å thickness, (ii) a pure Au film, and (iii) a Si enriched surface monolayer. The modifications of the interface structure in air have been checked by MeV ion microanalysis and channeling, for various gold coverages ranging between ≃1 monolayer up to ?100 Å. In all cases, drastic changes occur. Results related to 18O tracing experiments confirm the presence, under UHV, of Si atoms on the topmost layer. But the main fact is that a very strong Si diffusion through the gold layer takes place in air at room temperature for all the samples studied, leading to the formation of a surface silicon oxide layer much thicker than observed on samples without gold coverage.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Ns Metal-nonmetal contacts
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Microslip‐induced degradation in a braided superconductor

O. Tsukamoto, H. Maeda, and Y. Iwasa

Appl. Phys. Lett. 39, 918 (1981); http://dx.doi.org/10.1063/1.92606 (3 pages) | Cited 3 times

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Based on results of two quite different experiments, we report microslip‐induced degraded performance of a braided superconductor. Microslips, or more formally, microscopic slips, are inherent in all sliding events and are quite different from the well‐known stick slips that occur, on a macroscopic scale, for ’’unstable’’ sliding pairs. Microslips occur universally in all material pairs. Their effects are, in general, innocuous except in low‐temperature situations such as those found in superconducting magnet windings. Because materials have extremely low‐heat capacities at 4.2 K, the miniscule amount of energy released by a microslip can precipitate a quench in the superconducting magnets.
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74.25.-q Properties of superconductors
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