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15 Jul 1981

Volume 39, Issue 2, pp. 129-183

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Active mode locking of a XeCl laser

Grace Reksten, Thomas Varghese, and Walter Margulis

Appl. Phys. Lett. 39, 129 (1981); http://dx.doi.org/10.1063/1.92656 (3 pages) | Cited 19 times

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Active mode locking of a UV preionized transverse discharge XeCl laser has been achieved by modulating the gain using an intracavity Pockel’s cell. The output was 100% modulated, and pulses as short as ∼310 ps were measured. Generation of shorter pulses by the same method is discussed briefly.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.62.-b Laser applications

Polarization independent optical filter using interwaveguide TE↔TM conversion

R. C. Alferness and L. L. Buhl

Appl. Phys. Lett. 39, 131 (1981); http://dx.doi.org/10.1063/1.92657 (4 pages) | Cited 6 times

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We report the first demonstration of a polarization‐independent, integrated‐optic wavelength filter. Polarization‐independent filtering is achieved via wavelength selective TE↔TM conversion between a pair of mismatched Ti‐diffused lithium niobate waveguides. A peak coupling efficiency of ∼75% and 5‐Å filter bandwidth have been achieved.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam

W. T. Tsang

Appl. Phys. Lett. 39, 134 (1981); http://dx.doi.org/10.1063/1.92658 (4 pages) | Cited 66 times

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A heterostructure semiconductor laser with graded‐index waveguide and separate carrier and optical confinements prepared by molecular beam epitaxy is discussed. These lasers have very low broad‐area threshold current densities Jth 500 A/cm2 and support narrow beams of Gaussian distribution with far‐field half‐power full‐width in the direction perpendicular to the junction plane ϑ⊥ ∼20°–30°. It is also shown that only when the active layer thickness is ≲700 Å a significantly lower Jth is obtained by employing the symmetric laser structure instead of the regular double heterostructure.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A solar simulator‐pumped atomic iodine laser

Ja H. Lee and W. R. Weaver

Appl. Phys. Lett. 39, 137 (1981); http://dx.doi.org/10.1063/1.92659 (3 pages) | Cited 11 times

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An atomic iodine laser, a candidate for the direct solar‐pumped gas laser, was excited with a 4‐kW beam from a xenon arc solar simulator. Continuous lasing at 1.315 μm for over 10 ms was obtained for static filling of n‐C3F7I vapor. By momentarily flowing the lasant, a 30‐Hz pulsed output was obtained for about 200 ms. The peak laser power observed was 4 W for which the system efficiency reached 0.1%. These results indicate that direct solar pumping of a gas laser for power conversion in space is indeed feasible.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion

A direct nuclear‐pumped 3He‐CO laser

N. W. Jalufka and F. Hohl

Appl. Phys. Lett. 39, 139 (1981); http://dx.doi.org/10.1063/1.92660 (4 pages) | Cited 5 times

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Direct nuclear pumping of a low‐temperature (≊150 K) 3He‐CO laser has been achieved using the volumetric 3He(n,p) 3H nuclear reaction. Lasing occurred on the vibrational bands of CO at ≊5 μ. Effects of N2 on the system were investigated, as well as scaling of laser output with CO concentration, thermal neutron flux, and total pressure. This is the first volume‐pumped, nuclear powered CO laser.
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28.41.-i Fission reactors
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Broadband tunable picosecond semiconductor lasers

T. C. Damen, M. A. Duguay, J. Shah, J. Stone, J. M. Wiesenfeld, and R. A. Logan

Appl. Phys. Lett. 39, 142 (1981); http://dx.doi.org/10.1063/1.92661 (4 pages) | Cited 6 times

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Intense photoexcitation of GaAs by picosecond laser pulses creates a superdense electron‐hole plasma (∼1020 cm−3) which sustains laser action from 8900 Å in the IR to 7700 Å in the visible. Tunable picosecond laser pulses are obtained by moving a slightly wedged ultrashort cavity in the focus of the pump laser pulse.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

Effect of rare‐gas diluents on the performance of an XeCl laser pumped by a high‐intensity electron beam

Gary C. Tisone and James M. Hoffman

Appl. Phys. Lett. 39, 145 (1981); http://dx.doi.org/10.1063/1.92662 (3 pages) | Cited 6 times

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The effect of various rare‐gas diluents on the operating parameters of the XeCl laser has been investigated. The laser was electron‐beam pumped at an excitation rate of ≊3 MW/cm3 and a pulse duration of 50 nsec. Contrary to previous results we found that the intrinsic efficiency, small‐signal gain, and absorption were independent of the rare‐gas diluent. The intrinsic efficiency was ≊ 4%, the small‐signal gain was 0.18 cm−1, and the absorption coefficient was between 0.04 and 0.05 cm−1. A saturation intensity of 3 MW/cm2 was obtained from a modified Rigrod analysis of the data.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Plasma temperature measurements from highly ionized titanium imploding wire plasmas

M. Gersten, J. E. Rauch, W. Clark, R. D. Richardson, and G. M Wilkinson

Appl. Phys. Lett. 39, 148 (1981); http://dx.doi.org/10.1063/1.92641 (2 pages) | Cited 9 times

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Electron temperature measurements in highly ionized titanium plasmas are reported. The plasmas were created by imploding cylindrical arrays of fine wires with the Blackjack 5 pulse generator (Peak diode voltage≊3.0 MV, peak current≊4.6 MA, peak power ≊10 TW at full operating level). Temperatures between 0.7 and 2.3 keV were obtained from the slope of the free‐bound continuum. The results of these measurements are compared to temperature measurements obtained from the intensity ratio for the H‐like (1s–2p)/He‐like (1s2–1s3p1P) transitions. The line ratio method gave temperatures which ranged between 1.55 and 2.15 keV. Data are presented from eleven implosions at generator power levels between 5.2 and 7.5 TW.
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52.50.Lp Plasma production and heating by shock waves and compression
32.30.Rj X-ray spectra

Activation of arsenic‐implanted silicon using an incoherent light source

R. A. Powell, T. O. Yep, and R. T. Fulks

Appl. Phys. Lett. 39, 150 (1981); http://dx.doi.org/10.1063/1.92642 (3 pages) | Cited 37 times

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We report that continuous, incoherent light from a xenon arc lamp can be used to completely activate implanted Si (100) samples (75As+:100 keV, 1×1015 cm−2) with negligible dopant redistribution and excellent uniformity (sheet resistivity variation less than ±2% over a 3‐in.‐diam wafer). An entire 3‐in. wafer could be activated in only about 10 sec without relative motion of wafer and light beam. The extent to which implant damage was removed by the incoherent light anneal is qualitatively indicated by the carrier mobilities which were within 10% of single‐crystal values.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.80.-x Physical radiation effects, radiation damage

Interaction between arsenic, hydrogen, and silicon matrix in doping of sputtered amorphous hydrogenated silicon

M. Toulemonde, P. Siffert, A. Deneuville, and J. C. Bruyère

Appl. Phys. Lett. 39, 152 (1981); http://dx.doi.org/10.1063/1.92643 (3 pages) | Cited 5 times

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Simultaneous variations of the concentrations of As, Si, and H in As doped and undoped sputtered a‐Si:H structures are reported. The As is substitutional for Si, but most of the As atoms are also connected with an additional hydrogen and so inefficient for doping. The As doping also decreases significantly the material density. These results are shown to reject the usual assumption according to which doping atoms just supply carriers in the otherwise unchanged distribution of states of undoped a‐Si:H.
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81.15.Cd Deposition by sputtering

Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors

B. Zetterlund and A. J. Steckl

Appl. Phys. Lett. 39, 155 (1981); http://dx.doi.org/10.1063/1.92644 (2 pages)

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The recombination lifetime τr has been measured at low temperature in Si p‐channel metal oxide semiconductor field effect transistors (MOSFET’s) using the charge pumping technique. Measurements were performed over the 40–300‐K range. A monotonically increasing lifetime with decreasing temperature was measured. τr was found to be proportional to exp(Ar/kT), where Ar is a constant determined from the slope of ln τ vs 1/T. For a typical MOSFET the lifetime ranged from 80 ns at 300 K to 370 μs at 100 K. The value of Ar in this case was determined to be 106 meV.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Volume expansion of ion‐implanted diamond

E. W. Maby, C. W. Magee, and J. H. Morewood

Appl. Phys. Lett. 39, 157 (1981); http://dx.doi.org/10.1063/1.92645 (2 pages) | Cited 24 times

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Boron implantation into diamond at room temperature leads to significant irreversible volume expansion when the boron dose exceeds 5×1015 cm−2. This observation is presumed to reflect an upper limit in the extent to which diamond can be effectively doped with boron by ion implantation. Similar limitations associated with other implant species are anticipated.
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61.72.U- Doping and impurity implantation
61.72.Yx Interaction between different crystal defects; gettering effect
61.80.Jh Ion radiation effects

Origin of the defects observed after laser annealing of implanted silicon

A. Mesli, J. C. Muller, D. Salles, and P. Siffert

Appl. Phys. Lett. 39, 159 (1981); http://dx.doi.org/10.1063/1.92646 (2 pages) | Cited 14 times

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Deep‐level transient spectroscopy experiments, performed on 31P+‐implanted and laser‐annealed silicon, have shown that the defect concentration is considerably reduced when a conventional thermal annealing is performed before the laser treatment. A model is presented which explains the origin of the defects.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
78.40.Fy Semiconductors

Characteristics of an avalanche phototransistor fabricated on a Si surface

C. W. Chen and T. K. Gustafson

Appl. Phys. Lett. 39, 161 (1981); http://dx.doi.org/10.1063/1.92647 (3 pages)

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A laser‐activated avalanche transistor compatible with planar processing has been devised. The I‐V characteristics display current‐controlled negative differential resistance similar to a bidirectional triggering diode. Capability as an edge detector or as a comb generator was demonstrated. An avalanche current gain of 24 carriers/photon with a 20‐V bias was observed when the transistor was used as an optical pulse detector.
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85.60.Dw Photodiodes; phototransistors; photoresistors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors

A novel three‐step process for low‐defect‐density silicon on sapphire

Jun Amano and Kent Carey

Appl. Phys. Lett. 39, 163 (1981); http://dx.doi.org/10.1063/1.92648 (3 pages) | Cited 3 times

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A novel three‐step process for producing low‐defect‐density epitaxial silicon layers on sapphire substrates has been developed. The three‐step process utilizes a simple room‐temperature ion implantation and solid‐phase epitaxial regrowth. Both megaelectron volt helium backscattering and transmission electron microscopy (TEM) results indicate the excellent crystalline quality of silicon‐on‐sapphire (SOS) wafers produced by the three‐step process. The backscattering minimum yields at the interface and the surface of the three‐step SOS layer are 0.14 and 0.03, respectively. A TEM micrograph of the top 500 Å of the three‐step SOS layer shows none of the planar defects which are common to standard SOS layers.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.72.U- Doping and impurity implantation

Electromigration in aluminum conductors which are chains of single crystals

J. M. Pierce and M. E. Thomas

Appl. Phys. Lett. 39, 165 (1981); http://dx.doi.org/10.1063/1.92649 (4 pages) | Cited 17 times

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Electromigration was investigated in 1×4×250 μm aluminum conductors which were recrystallized to produce chains of single‐crystal grains, ’’bamboo’’ structures. Median lifetimes were substantially longer than are found in normal polycrystalline Al, reflecting the lack of grain boundary diffusion paths. However, mass fluxes estimated from damage features were larger and more variable than is consistent with a normal lattice diffusion mechanism. An enhanced lattice diffusion mechanism is proposed to account for these observations.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology

Multiplication noise of InP avalanche photodiodes

T. Shirai, F. Osaka, S. Yamasaki, T. Kaneda, and N. Susa

Appl. Phys. Lett. 39, 168 (1981); http://dx.doi.org/10.1063/1.92650 (2 pages) | Cited 3 times

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An InP avalanche photodiode with a guard ring structure is fabricated. The maximum avalanche gain obtained is 210 at a primary photocurrent of 0.2 μA, and uniform photoresponse without local enlargement is obtained at an avalanche gain of 10. Multiplication noise characteristics are investigated, and the effective ionization rate ratio of holes to electrons is found to be 1.7–1.8.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Tunable oscillator using pulsons on large‐area lossy Josephson junctions

Peter L. Christiansen, Peter S. Lomdahl, and Norman J. Zabusky

Appl. Phys. Lett. 39, 170 (1981); http://dx.doi.org/10.1063/1.92651 (3 pages) | Cited 9 times

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A tunable resonator in the gigahertz‐range using circular sine‐Gordon fluxons or pulsons on a lossy large‐area Josephson junction with a circular impurity in the Josephson current density is proposed. To obtain steady tunable oscillations in a lossy medium, one must supply energy (’’negative’’ resistance). We propose to control the constant bias current with an autonomous pulson velocity‐sensitive switch. One possibility for fine tuning the oscillations is to vary the strength of the Josephson impurity current.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Identification of quench origins in a superconductor with acoustic emission and voltage measurements

O. Tsukamoto, J.F. Maguire, E.S. Bobrov, and Y. Iwasa

Appl. Phys. Lett. 39, 172 (1981); http://dx.doi.org/10.1063/1.92652 (3 pages) | Cited 14 times

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The acoustic emission and voltage measurements were used to identify quench sources in a current‐carrying superconductor. The sources identified were (i) conductor motion, (ii) epoxy cracking, and (iii) pure joule heating resulting from the conductor reaching critical current. The combination of these two techniques appears to be a promising diagnostic tool in probing premature quenches in superconductors and superconducting magnets.
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74.25.Sv Critical currents
74.90.+n Other topics in superconductivity (restricted to new topics in section 74)
62.20.M- Structural failure of materials

Volume pinning force and upper critical field of irradiated Nb3Sn

P. Maier and E. Seibt

Appl. Phys. Lett. 39, 175 (1981); http://dx.doi.org/10.1063/1.92653 (3 pages) | Cited 2 times

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Irradiation by neutrons and ions in A15 superconductors (Nb3Sn, V3Ga) exerts a stronger influence on the pinning behavior than in nonordered alloys (NbTi). In this work it is shown for deuteron irradiated Nb3/Sn wires prepared by the bronze process that the dose curve of the volume pinning force PV can be conveniently described by a sum of two terms, due to the grain boundary pinning and to the radiation pinning, respectively. After deduction of the contribution by the radiation‐induced pinning centers, good agreement is obtained between the measured PV values and those calculated using the upper critical field Bc2 and the transition temperature Tc on the basis of the irradiation fluence. The use of a theoretical relationship between Bc2 and Tc is supported by measured values. Application to multifilamentary superconductors with high current carrying capabilities simplifies the calculation of PV, since the radiation induced volume pinning force can be neglected.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
74.70.-b Superconducting materials other than cuprates

Reaction of Nb alloys with Al2O3 to form high Tc Nb3Al

P. H. Schmidt, J. M. Rowell, and W. L. Feldmann

Appl. Phys. Lett. 39, 177 (1981); http://dx.doi.org/10.1063/1.92654 (3 pages) | Cited 3 times

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We report that the reaction of Nb with sapphire substrates at moderately high temperatures (≲1100 °C) is enhanced by mixing with Nb, a metal which has a higher oxygen affinity than Al. For example, the reaction of NbZr with Al2O3 at 950 °C results in the formation of zirconium oxide and Nb3Al with a superconducting Tc ≳17 K.
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74.78.-w Superconducting films and low-dimensional structures
74.25.-q Properties of superconductors
74.70.-b Superconducting materials other than cuprates
81.15.Cd Deposition by sputtering

Improved figure of merit in obliquely cut pyroelectric crystals

Avner Shaulov

Appl. Phys. Lett. 39, 180 (1981); http://dx.doi.org/10.1063/1.92655 (2 pages) | Cited 9 times

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In pyroelectric crystals with high dielectric anisotropy, a significantly higher figure of merit can be obtained using cuts at oblique angles to the pyroelectric axis, rather than the conventional cuts lying perpendicular to it. For a particular material an appropriate cut can be selected to provide the maximum figure of merit attainable at the chosen temperature of operation. Experimental data obtained in deuterated triglycine fluoroberylate crystals show that optimum oblique cuts can yield an increase as great as a factor of 3 in the figure of merit of this material.
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77.70.+a Pyroelectric and electrocaloric effects
FREE

Erratum: Low‐frequency intensity fluctuation in laser diodes with external optical feedback

Masahiko Fujiwara, Keiichi Kubota, and Roy Lang

Appl. Phys. Lett. 39, 182 (1981); http://dx.doi.org/10.1063/1.92881 (1 page)

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Abstract Unavailable
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
99.10.Cd Errata
FREE

Erratum: Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser‐threshold‐current temperature sensitivity

T. Uji, K. Iwamoto, and R. Lang

Appl. Phys. Lett. 39, 182 (1981); http://dx.doi.org/10.1063/1.92882 (1 page)

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Abstract Unavailable
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling
99.10.Cd Errata
FREE

Erratum: Four‐wave polarization spectroscopy of small‐gap semiconductors: Application to free carrier concentration measurements in gallium arsenide using a tunable infrared source

Ph. Kupecek, M. Comte, and D. S. Chemla

Appl. Phys. Lett. 39, 183 (1981); http://dx.doi.org/10.1063/1.92880 (1 page)

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Abstract Unavailable
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42.65.-k Nonlinear optics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
72.80.Ey III-V and II-VI semiconductors
99.10.Cd Errata
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