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1 Aug 1981

Volume 39, Issue 3, pp. 185-291

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Low threshold current density InGaAsP/InP lasers grown in a vertical liquid phase epitaxial system

N. Tamari and A. A. Ballman

Appl. Phys. Lett. 39, 185 (1981); http://dx.doi.org/10.1063/1.92696 (3 pages) | Cited 9 times

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Threshold current density of InGaAsP/InP double heterostructure lasers made from crystals grown in a vertical liquid phase epitaxial system and emitting at 1.3 μm is given versus active layer thickness. Extremely low normalized threshold current density is observed Jth/d∼1.6kA/cm2 μm, which represents a considerable improvement over state of the art. The lowest threshold density among 80 lasers studied is 1 kA/cm2. Good uniformity over each wafer is found along with consistency of the results among different experiments. Since standard preparation and fabrication techniques are used in this work, it is assumed that favorable thermal conditions existing in the vertical liquid phase epitaxial system might be responsible for these promising results.
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68.55.-a Thin film structure and morphology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.55.Px Semiconductor lasers; laser diodes

Low‐threshold 1.3‐μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition

Willie Ng, C. S. Hong, H. Manasevit, and P. D. Dapkus

Appl. Phys. Lett. 39, 188 (1981); http://dx.doi.org/10.1063/1.92697 (2 pages) | Cited 3 times

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1.3μm GaInAsP/InP buried heterostructure lasers were successfully fabricated by using a hybrid combination of liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MO‐CVD). Definite advantages were found in the use of MO‐CVD for the overgrowth of the optical and current confining layers. Excellent optical linearity up to two times the threshold current, as well as low‐threshold current (57 mA), were obtained during cw operation at room temperature. A single longitudinal mode was observed at ∼1.11 times the threshold current.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Fq Growth from melts; zone melting and refining

Direct nuclear excitation of a 3He‐CO2 gas mixture

N. W. Jalufka

Appl. Phys. Lett. 39, 190 (1981); http://dx.doi.org/10.1063/1.92698 (3 pages)

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Probe measurements using a continuous wave CO2 laser have been carried out on a 3He‐CO2 gas mixture directly excited by the 3He(n,p)3H reaction. At a gas pressure of 1 atm and thermal neutron flux up to 1×1017 n/cm2 sec, total extinction of the probe beam was observed. Addition of N2 to the gas mixture (up to 20%) produced a media such as is used in electric discharge CO2 lasers. However, this mixture produced the same results as the 3He‐CO2 mixture. Absorption of the laser beam indicates that with direct nuclear excitation, it is the lower laser level which is excited. Therefore direct nuclear pumping of a CO2 laser does not appear feasible.
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28.41.-i Fission reactors
42.55.Lt Gas lasers including excimer and metal-vapor lasers

A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy

W. T. Tsang and J. A. Ditzenberger

Appl. Phys. Lett. 39, 193 (1981); http://dx.doi.org/10.1063/1.92699 (2 pages) | Cited 7 times

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Visible (AlGa)As double‐heterostructure lasers with a 200‐Å Al0.17Ga0.83As active layer have been prepared by molecular beam epitaxy. The diodes lase at ∼7520 Å and have an average pulsed threshold current density Jth of 810A/cm2, which agrees for the first time with the value calculated from first principles without adjustable parameters by Casey, Jr., in the very thin active‐layer regime. The far‐field half‐power full‐width ϑd in the direction perpendicular to the junction plane is as narrow as 11 °. The temperature coefficient T0 of the temperature dependence of threshold is 110 K.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Anisotropic suspension display

G. Beni, H. G. Craighead, and S. Hackwood

Appl. Phys. Lett. 39, 195 (1981); http://dx.doi.org/10.1063/1.92700 (3 pages) | Cited 8 times

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We show that an anisotropic suspension can be rapidly (∼1 msec) switched between two states of different refractive index by applying a low voltage (∼1 V). We propose a display design that utilizes this refractive index change to produce transmittance modulations from ≳95% to <10% in single pass.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
85.60.Pg Display systems

Wavelength‐multiplexed AND gate: A building block for monolithic optically coupled circuits

J. A. Copeland, J. C. Campbell, A. G. Dentai, and S. E. Miller

Appl. Phys. Lett. 39, 197 (1981); http://dx.doi.org/10.1063/1.92701 (3 pages) | Cited 1 time

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A device which performs the binary logic and function has been demonstrated, which uses optical signals with different wavelengths as inputs and provides an electrical output capable of triggering a trap‐doped laser. Wavelength multiplexing of inputs makes possible a compact structure, which may be a basic building‐block device in monolithic optically coupled circuits.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
72.40.+w Photoconduction and photovoltaic effects

4.3‐μm cascade CO2 laser

T. A. Znotins, J. Reid, B. K. Garside, and E. A. Ballik

Appl. Phys. Lett. 39, 199 (1981); http://dx.doi.org/10.1063/1.92677 (3 pages) | Cited 10 times

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An in‐cavity hot CO2 cell is used to obtain 4.3‐μm lasing from a cascade process in a conventional CO2 laser. The 4.3‐μm laser operates in a Q‐switched mode, is line tunable, and has average output powers greater than 100 mW.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.72.-g Optical sources and standards

Monitoring UF6 photodissociation via laser multiphoton ionization

M. Stuke, H. Reisler, and C. Wittig

Appl. Phys. Lett. 39, 201 (1981); http://dx.doi.org/10.1063/1.92678 (3 pages) | Cited 11 times

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Laser multiphoton ionization (MPI) is used to detect nascent photoproducts following the UV photodissociation of UF6. Sensitivity is high, and there is no measurable background due to the MPI of parent UF6. The technique is very well suited for monitoring isotopically selective photodissociation on a ’’single shot’’ basis.
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79.20.Ds Laser-beam impact phenomena
82.50.Hp Processes caused by visible and UV light

A magnetically stabilized radial discharge for a high‐powered laser

H. J. J. Seguin, C. E. Capjack, D. Antoniuk, and V. A. Seguin

Appl. Phys. Lett. 39, 203 (1981); http://dx.doi.org/10.1063/1.92679 (3 pages) | Cited 13 times

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Details of a new ’’magnetically stabilized’’ coaxial electrode system supporting a radial discharge geometry is presented. Performance was found to be largely independent of gas mixture and pressure such that high‐power cw discharges were easily obtained in all the gases tested, including SF6. The technique is exceedingly simple and appears scalable to provide a very large active volume in an unusually small physical package. A cw power loading in excess of 40 kW/l has already been attained without experiencing any glow‐to‐arc transitions.
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52.80.Sm Magnetoactive discharges (e.g., Penning discharges)
42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Scattering loss reduction in ZnO optical waveguides by laser annealing

Subhadra Dutta, Howard E. Jackson, J. T. Boyd, Fred S. Hickernell, and R. L. Davis

Appl. Phys. Lett. 39, 206 (1981); http://dx.doi.org/10.1063/1.92680 (3 pages) | Cited 20 times

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We report successful laser annealing of ZnO optical waveguides deposited on an amorphous SiO2 layer thermally grown on Si. A significant improvement in the optical attenuation of the fundamental mode from several dB/cm before laser annealing to as low as 0.01 dB/cm after laser annealing is observed. Scattering loss measurements for the m = 1 and m = 2 mode are also reported. We attribute the reduction in loss primarily to an improvement in the quality of the ZnO film in the region near the ZnO‐SiO2 interface.
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81.40.Tv Optical and dielectric properties related to treatment conditions
75.20.Ck Nonmetals
68.60.-p Physical properties of thin films, nonelectronic
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Continuous‐wave mirrorless lasing in optically pumped atomic Cs and Rb vapors

A. Sharma, N. D. Bhaskar, Y. Q. Lu, and W. Happer

Appl. Phys. Lett. 39, 209 (1981); http://dx.doi.org/10.1063/1.92681 (3 pages) | Cited 19 times

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Continuous‐wave lasing in optically pumped atomic cesium and rubidium vapor is observed without the use of any feedback mirrors. The stimulated emission in a number of infrared wavelengths is restricted to a very narrow angle in both the forward and backward directions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Isoelectronic scaling of recombination lasers to higher ion stages and shorter wavelengths

W. T. Silfvast, L. H. Szeto, and O. R. Wood

Appl. Phys. Lett. 39, 212 (1981); http://dx.doi.org/10.1063/1.92682 (3 pages) | Cited 9 times

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Laser action in the visible and ultraviolet (at wavelengths as short as 298 nm) in the higher ionization stages of a number of metal vapors has been produced by a population inversion mechanism based on segmented plasma excitation and recombination. Many of the transitions have never been observed in laser action before by any excitation means and a number of the oscillating transitions in silver, cadmium, and indium form isoelectronic sequences.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Acoustic detection of electron spin resonance

H. Coufal

Appl. Phys. Lett. 39, 215 (1981); http://dx.doi.org/10.1063/1.92683 (2 pages) | Cited 1 time

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The electron spin resonance (ESR) signal of diphenylpicrylhydrazyl was recorded by detecting the modulation of the absorbed microwave power with a gas‐coupled microphone. This photoacoustic detection scheme is compared with conventional ESR detection. Applications of the acoustical detection method to other modulation spectroscopic techniques, particularly nuclear magnetic resonance, are discussed.
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76.30.-v Electron paramagnetic resonance and relaxation
07.20.Fw Calorimeters
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Heating of a dense plasma using an intense, relativistic electron beam

M. D. Montgomery, J. V. Parker, K. B. Riepe, and R. L. Sheffield

Appl. Phys. Lett. 39, 217 (1981); http://dx.doi.org/10.1063/1.92684 (3 pages) | Cited 8 times

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We report observations of heating of a dense (∼1017 cm−3) plasma using a 3‐MeV electron beam with a current density of 5×105 A/cm2. The measured, strong dependence of heating on beam transverse temperature and the short saturation distance (<4 cm) are evidence that the beam‐to‐plasma energy transfer takes place via a fast growing microinstability such as the relativistic electron‐electron two stream.
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52.40.Mj Particle beam interactions in plasmas
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)

Study of a gas‐solid dielectric interface by means of surface depolarization thermocurrents

B. Despax, Bui Ai, M. Abdullah, and C. Huraux

Appl. Phys. Lett. 39, 220 (1981); http://dx.doi.org/10.1063/1.92685 (3 pages) | Cited 2 times

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The method of thermally stimulated currents (TSC), with a special configuration of electrodes, was used to study interfacial reactions on a soda glass surface exposed to a highly polarizable gas such as carbon dioxide. Two well‐developed peaks were observed at −100 and −120 °C, which were completely absent from the volume response of the same material. The peaks disappeared on prolonged heat treatment of the specimen in vacuum. The results were interpreted in terms of polarization phenomena introduced near the surface of the glass by the presence of highly polarizable molecules.
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77.22.Ej Polarization and depolarization
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Analysis of density perturbations of a freely imploding shell

Takashi Yabe, Akio Nishiguchi, and Noriaki Ueda

Appl. Phys. Lett. 39, 222 (1981); http://dx.doi.org/10.1063/1.92686 (3 pages) | Cited 6 times

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The time evolution of the density perturbation of a freely imploding shell is simulated by the fluid PIC code for various specific heat ratios. The rough estimation shows that the angular momentum conservation of the perturbed flow may be responsible for the perturbation growth.
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47.20.-k Flow instabilities
47.40.-x Compressible flows; shock waves
52.30.-q Plasma dynamics and flow

X‐radiographic studies of ablatively driven relativistic electron beam targets

J. Chang, D. L. Fehl, M. M. Widner, K. W. Bieg, and M. A. Palmer

Appl. Phys. Lett. 39, 224 (1981); http://dx.doi.org/10.1063/1.92687 (3 pages)

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Studies of ablatively driven, relativistic electron beam target implosions have been made with a two‐frame, 3‐ns exposure flash, x‐radiography system. The spherical targets were filled with 200 atm of deuterium gas and had a copper shell thickness greater than the electron range. In addition, the copper shell was lined with a thin gold layer which permitted direct radiographic observations of the Au liner, achieving thereby direct observation of the pusher fuel boundary. The gold liner was observed to implode at a radial velocity of 2×105 cm/s, while maintaining better than a±7% variation in radial position. From the measured convergence ratio we have inferred a maximum fuel density, in the compressed state, of greater than several times solid density.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
47.20.-k Flow instabilities
07.68.+m Photography, photographic instruments; xerography
06.60.Jn High-speed techniques (microsecond to femtosecond)

Measurement of the diffusion coefficient and recombination effects in germanium by diffraction from optically‐induced picosecond transient gratings

Steven C. Moss, J. Ryan Lindle, H. J. Mackey, and Arthur L. Smirl

Appl. Phys. Lett. 39, 227 (1981); http://dx.doi.org/10.1063/1.92688 (3 pages) | Cited 19 times

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A variation of the excite‐and‐probe technique is used to measure the picosecond evolution of laser‐induced transient gratings that are produced in germanium by the direct absorption of 35‐psec optical pulses at 1.06 μm. Grating lifetimes are determined as a function of grating spacing and sample temperature for peak carrier densities of approximately 5×1019 cm−3. A linear diffusion‐recombination model for the grating decay provides a good fit to the experimental data and allows the extraction of the diffusion coefficient and places limits on the recombination lifetime.
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72.20.-i Conductivity phenomena in semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film‐substrate interface

Chin‐An Chang, M. Heiblum, R. Ludeke, and M. I. Nathan

Appl. Phys. Lett. 39, 229 (1981); http://dx.doi.org/10.1063/1.92689 (3 pages) | Cited 18 times

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We have grown n+ ‐GaAs films using Sn or Ge doping on n+ ‐GaAs substrates by molecular beam epitaxy and studied the vertical electronic transport through the film‐substrate interface. An interfacial layer with high resistance and a nonlinear I‐V characteristic is observed whenever the substrates have been sputter‐cleaned and annealed prior to the growth. Similar results are observed for the nonsputtered substrates with a high surface coverage of carbon. Such an interfacial layer can be eliminated in both cases by a predeposition of a Sn monolayer prior to the growth of the n+ ‐GaAs layers.
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68.55.-a Thin film structure and morphology
73.40.-c Electronic transport in interface structures
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Epitaxial Ge/GaAs heterostructures by scanned cw laser annealing of a‐Ge layers on GaAs

J. E. Greene, K. C. Cadien, D. Lubben, G. A. Hawkins, G. R. Erikson, and J. R. Clarke

Appl. Phys. Lett. 39, 232 (1981); http://dx.doi.org/10.1063/1.92690 (3 pages) | Cited 8 times

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Expitaxial Ge/GaAs heterostructures have been produced by scanned cw argon laser annealing of 440‐nm‐thick amorphous Ge films on (100) semi‐insulating GaAs substrates. Depending on the incident laser power and scan rate, two modes of film regrowth were observed. At low powers (between ∼1.6 and 4.0 W for a beam diameter of ∼40μm) and scan rates between 1 and 400 cm/sec, polycrystalline Ge with a (100) preferred orientation was formed by an ’’explosive’’ crystallization mechanism. At higher powers, and over a scan rate range of 20–400 cm/sec, single‐crystal films containing some dissolved GaAs in solution were obtained by liquid phase regrowth. Typical film resistivities ρ were as follows: as‐deposited, ρ = 180 Ω cm; polycrystalline films, ρ = 3×10−2 cm; single‐crystal films, ρ = 9×10−4Ω cm.
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79.20.Ds Laser-beam impact phenomena
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

High concentration antimony diffusion into silicon using auxiliary wafers

M. Nanba, H. Kozuka, and K. Usami

Appl. Phys. Lett. 39, 235 (1981); http://dx.doi.org/10.1063/1.92691 (3 pages)

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The behavior of auxiliary wafers used for Sb diffusion has been studied, with the auxiliary wafers set face to face with diffusion wafers. A high Sb concentration, as high as the solid solubility of Sb into silicon, was attained by auxiliary wafers lapped with alumina powder but not attained by those lapped with carborundum powder. Sapphire substrates, chemical vapor deposition‐Al2O3 film deposited on silicon wafers, and Al+ ‐implanted silicon wafers were used for the auxiliary wafers, and they brought desirable results. Chemical analysis showed that the glass layer grown on the diffusion wafer contained aluminum oxide, which was estimated to give a high Sb concentration in the diffusion wafer.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

a‐SiC:H/a‐Si:H heterojunction solar cell having more than 7.1% conversion efficiency

Y. Tawada, H. Okamoto, and Y. Hamakawa

Appl. Phys. Lett. 39, 237 (1981); http://dx.doi.org/10.1063/1.92692 (3 pages) | Cited 84 times

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A clear valency electron controllability with substitutional impurity doping in the hydrogenated amorphous silicon carbide has been found. The amorphous silicon carbide is produced by the plasma decomposition of [SiH4(1−X)+CH4(X)] with the dopant gas of a B2H6 or PH3 system. Electrical and optical properties of doped amorphous SiC films are briefly demonstrated. Utilizing this a‐SiC:H as a wide‐band‐gap window material, we have developed a new type of a‐SiC:H/a‐Si:H heterojunction solar cell. A typical cell performance is Voc = 0.887 V, Jsc = 12.33 mA/cm2, fill factor = 0.653, and the conversion efficiency of 7.14% under AM‐1 illumination.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects

GaAs‐oxide interface states: A gigantic photoionization effect and its implications to the origin of these states

J. Lagowski, W. Walukiewicz, T. E. Kazior, H. C. Gatos, and J. Siejka

Appl. Phys. Lett. 39, 240 (1981); http://dx.doi.org/10.1063/1.92693 (3 pages) | Cited 5 times

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Gigantic photoionization was discovered on GaAs‐oxide interfaces leading to the discharge of deep surface states with rates exceeding 103 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor‐donor transitions and is explained as due to energy transfer from photo‐excited donor‐acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Void formation in annealed proton‐bombarded GaAs

H. C. Snyman, J. H. Neethling, and J. S. Vermaak

Appl. Phys. Lett. 39, 243 (1981); http://dx.doi.org/10.1063/1.92694 (3 pages) | Cited 7 times

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Radiation damage in GaAs bombarded to a dose of 1017 protons cm−2 at 300 keV is directly observable by cross‐sectional transmission electron microscopy as a dark diffuse structure. The densest region of this damage lies at the depth predicted by the Lindhard‐Scharff‐Schiott theory for proton penetration. During anneal for 15 min at 800–1000 °C the crystal recovers with the formation of dislocation networks interspersed with voids. The voids take on the form of dodecahedrons and produce a swelling of 2.5% at the peak of the damage distribution for samples annealed at 1000 °C.
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61.80.Jh Ion radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique

T. F. Kuech, M. Mäenpää, and S. S. Lau

Appl. Phys. Lett. 39, 245 (1981); http://dx.doi.org/10.1063/1.92695 (3 pages) | Cited 34 times

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The heteroepitaxial growth of Ge on Si substrates by means of a simple chemical vapor deposition (CVD) method is presented. The epitaxial Ge layers were formed by the decomposition of GeH4 in a H2 ambient at substrate temperatures of 500–900 °C. Smooth surface morphologies and high crystalline quality are obtained in the epitaxial Ge layers. Electrical properties of the Ge films and the resulting p‐Ge/n‐Si heterojunctions were determined. This technique provides a Ge growth method that is compatible with the current CVD processes used in the growth of GaAs.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
85.30.De Semiconductor-device characterization, design, and modeling
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