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1 Aug 1981

Volume 39, Issue 3, pp. 185-291

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Generation‐recombination centers in p‐type Hg1−xCdxTe

Colin E. Jones, Vijayan Nair, and Dennis L. Polla

Appl. Phys. Lett. 39, 248 (1981); http://dx.doi.org/10.1063/1.92702 (3 pages) | Cited 29 times

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Hg1−xCdxTe photodiodes have long been thought to be limited by recombination‐generation centers. The minority carrier lifetime τe in many samples of p‐type Hg1−xCdxTe has been explained assuming a midgap Shockley–Read center. This modeling is not unique and does not fully characterize the center. This letter reports deep level transient spectroscopy (DLTS) data on a series of x = 0.2–0.4 p‐type Hg1−xCdxTe samples. The DLTS data confirms the Shockley–Read model in that there is a commonly observed recombination center just below midgap. Another center near 3/4 Eg is also observed. Both of these centers can be important in controlling lifetime and detector performance.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors

Pulsed laser modification of SiO2/Si interface properties and minority‐carrier lifetime

V. G. I. Deshmukh, H. C. Webber, and D. V. McCaughan

Appl. Phys. Lett. 39, 251 (1981); http://dx.doi.org/10.1063/1.92676 (3 pages) | Cited 3 times

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Effects of pulsed laser irradiation on the SiO2/Si interface are investigated by means of capacitance‐voltage and capacitance‐time experiments yielding values of surface state density (Nss), oxide charge (QFC), and minority carrier lifetime (MCL) which prove to be a sensitive probe of the laser damage thresholds. Increases of Nss and QFC and decreases of MCL of two to three orders of magnitude from controlled starting values are observed at incident energy densities from 0.7 to 1.1 J cm−2. Subsequent thermal treatments restore either QFC or both QFC and Nss to control values. The laser method gives a technique for localized lifetime reduction on silicon wafers while maintaining long lifetimes elsewhere on the wafers.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Pyrometric measurement of temperature during cw argon‐ion laser annealing and the solid‐state regrowth rate of amorphous Si

T. O. Sedgwick

Appl. Phys. Lett. 39, 254 (1981); http://dx.doi.org/10.1063/1.92703 (3 pages) | Cited 8 times

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A standard pyrometer is modified with a long working distance magnifier and used to measure temperature in situ during cw argon laser annealing of ion‐implanted Si. The measured temperatures of 1020 and 1077 °C and observed regrowth rates for 900 Å of amorphous Si in 2×10−4 and 4×10−4 sec respectively agree reasonably well with the solid‐state Si regrowth rate previously determined by others from furnace annealing experiments in the minutes to hours time regime.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
68.55.-a Thin film structure and morphology
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Submicron polycrystal silicon film solar cells

P. H. Fang, C. C. Schubert, J. H. Kinnier, and Dawen Pang

Appl. Phys. Lett. 39, 256 (1981); http://dx.doi.org/10.1063/1.92663 (2 pages) | Cited 1 time

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A silicon polycrystal thin‐film solar cell with a present efficiency of 1% is reported. The process involves depositing a silicon film by electron beam evaporation on metal layers with steel as the substrate. The thickness of the p‐i‐n structure is about 5 μm. The grain size is of the order of several hundred angstrons. Some similarities of this submicron silicon with amorphous silicon are discussed.
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84.60.Jt Photoelectric conversion

Electrical characterization of solar cells by surface photovoltage

Bernard Goldstein, David Redfield, Daniel J. Szostak, and Lester A. Carr

Appl. Phys. Lett. 39, 258 (1981); http://dx.doi.org/10.1063/1.92664 (3 pages) | Cited 13 times

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It is shown that under many conditions the surface photovoltage (SPV) can be identified with Voc of a solar cell. Using a Kelvin probe to measure the SPV we have been able to determine several properties of silicon solar cells without recourse to a contact on the front surface and the attendant complications of resistive losses due to external currents. We have further used these techniques in conjunction with sputter etching to ’’profile’’ the potential through a single‐crystal solar‐cell junction and an amorphous silicon solar cell.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Redistribution of oxygen within damage regions of boron‐implanted silicon

T. J. Magee, C. Leung, H. Kawayoshi, B. Furman, C. A. Evans, and D. S. Day

Appl. Phys. Lett. 39, 260 (1981); http://dx.doi.org/10.1063/1.92665 (3 pages) | Cited 10 times

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The redistribution and gettering of 16O in Si within boron‐implanted regions has been investigated using transmission electron microscopy and secondary‐ion mass spectrometry profiling. It has been shown that low‐temperature (⩽ 600 °C) secondary annealings following normal high‐temperature (900–1000 °C) annealing result in the rapid diffusion and gettering of oxygen within residual damage regions. The gettered oxygen is present in the form of SiOx precipitates stabilized along dislocations lines and residual damage structure.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.S- Impurities in crystals
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Pseudogap state density in sputtered a‐Si:H from field effect and capacitance measurements

Richard Weisfield, Pierre Viktorovitch, David A. Anderson, and William Paul

Appl. Phys. Lett. 39, 263 (1981); http://dx.doi.org/10.1063/1.92666 (3 pages) | Cited 9 times

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Changes in film deposition procedure have permitted us to measure, for the first time, field‐effect‐induced current multiplication up to 104 in sputtered a‐Si:H. The deduced Fermi‐level state density of the order of 1×1017 eV−1 cm−3 agrees within small errors with analysis of capacitance measurements on codeposited samples.
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71.20.-b Electron density of states and band structure of crystalline solids
71.23.-k Electronic structure of disordered solids
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Ultrafast magnetophotoconductivity of semi‐insulating gallium arsenide

R. H. Moyer, P. Agmon, T. L. Koch, and A. Yariv

Appl. Phys. Lett. 39, 266 (1981); http://dx.doi.org/10.1063/1.92667 (3 pages) | Cited 5 times

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The speed of opto‐electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto‐electronic switch.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Ls Magneto-optical effects
73.25.+i Surface conductivity and carrier phenomena

50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching

L. D. Jackel, R. E. Howard, E. L. Hu, D. M. Tennant, and P. Grabbe

Appl. Phys. Lett. 39, 268 (1981); http://dx.doi.org/10.1063/1.92668 (3 pages) | Cited 15 times

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A trilevel electron beam resist has been used to make 25‐nm metal features on thick silicon substrates. Using this metal as a mask for reactive ion etching, silicon structures 0.33 μm deep have been fabricated. The resist consists of a thin upper layer of polymethylmethacrylate (PMMA), a middle layer of Ge, and a lower layer of co‐polymer of methylmethacrylate and methacrylic acid, P(MMA/MAA). High‐resolution patterns are written in the upper resist layer and are transferred to the lower layers by reactive‐ion etching. Completed resist stencils have 300‐nm high walls with near‐vertical profiles and are suitable for liftoff processing.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
41.75.Fr Electron and positron beams
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Observation of grain boundary hydrogen in polycrystalline silicon with Fourier transform infrared spectroscopy

D. S. Ginley and D. M. Haaland

Appl. Phys. Lett. 39, 271 (1981); http://dx.doi.org/10.1063/1.92669 (3 pages) | Cited 13 times

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Fourier transform infrared spectroscopy has been applied to the study of polycrystalline silicon samples previously exposed to rf‐ and dc‐induced hydrogen plasmas. The first direct observation of hydrogen incorporated in the grain boundaries has been made. Peaks attributable to surface hydrogen have also been observed. The techniques developed show considerable utility in probing the very small numbers of impurity atoms in grain boundaries.
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78.30.Hv Other nonmetallic inorganics
81.40.Tv Optical and dielectric properties related to treatment conditions
84.60.Jt Photoelectric conversion
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Silicide formation in Pd‐a‐Si:H Schottky barriers

M. J. Thompson, N. M. Johnson, R. J. Nemanich, and C. C. Tsai

Appl. Phys. Lett. 39, 274 (1981); http://dx.doi.org/10.1063/1.92670 (3 pages) | Cited 24 times

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This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a‐Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long‐term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

The effect of laser annealing on the critical‐current density in Nb3Ge

A. I. Braginski, J. R. Gavaler, R. C. Kuznicki, B. R. Appleton, and C. W. White

Appl. Phys. Lett. 39, 277 (1981); http://dx.doi.org/10.1063/1.92671 (3 pages) | Cited 5 times

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Pulse laser annealing of Nb‐Ge superconducting films grown by chemical vapor deposition produces an increase in critical‐current density, Jc, if the atomic ratio Nb/Ge is less than three. This Jc increase is caused by flux pinning on the nucleated Nb5Ge3(σ) second‐phase particles rather than on grain boundaries in the melted and resolidified surface layer. This resolidified layer is amorphous or highly disordered.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
74.10.+v Occurrence, potential candidates
74.25.N- Response to electromagnetic fields

Selective niobium anodization process for fabricating Josephson tunnel junctions

H. Kroger, L. N. Smith, and D. W. Jillie

Appl. Phys. Lett. 39, 280 (1981); http://dx.doi.org/10.1063/1.92672 (3 pages) | Cited 128 times

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A novel process for fabricating refractory sperconducting tunnel junctions is described, which is useful with both deposited and native oxide barriers. The distinguishing feature of the method is that the entire superconductor‐barrier‐superconductor sandwich is formed before the patterning of any layer. Isolated Josephson junctions are then formed by anodizing through the upper electrode, while the devices themselves are protected by a photoresist mask. Using this process, Nb‐Si:H‐Nb junctions have been fabricated, whose product of critical current and subgap resistance exceeds 10 mV and whose critical current density varies by about 50% over a 2‐in. diameter wafer.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
73.40.Sx Metal-semiconductor-metal structures
73.40.Rw Metal-insulator-metal structures

The effect of photoelectrochemical etching on the performance of CdTe polysulfide photoelectrochemical cells

N. Müller and R. Tenne

Appl. Phys. Lett. 39, 283 (1981); http://dx.doi.org/10.1063/1.92673 (3 pages) | Cited 19 times

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Photoelectrochemical etching of n‐CdTe single crystals was found to improve both short circuit current and photovoltage of a CdTe‐polysulfide photoelectrochemical solar cell. Variation of the photoetching time influences drastically the power output and the spectral response of the cell. The experimental results can be interpreted as follows: a short photoetching mainly removes recombination centers near the electrode surface, whereas a prolonged photoetching leads to photocorrosion of the electrode. Pits of ∼0.1 μ appear on the surface of the electrode after the photoetching similar to those found in CdSe.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
84.60.Jt Photoelectric conversion

Applicative aspects of the transport phenomena in liquids induced by laser beams

G. Delfino

Appl. Phys. Lett. 39, 285 (1981); http://dx.doi.org/10.1063/1.92674 (3 pages)

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Mass and heat transport induced by an Ar+ laser beam in liquid samples are considered. The use of the Onsager reciprocity and of the Gibbs–Duhem relations permits us to derive an approximate relation which relates local temperatures to temperature gradients by means of several physical parameters, i.e., density, specific heat, thermal conductivity, diffusion coefficient, viscosity, and surface tension of the specimen. The measure of one of these parameters, if unknown, is also possible.
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44.10.+i Heat conduction
05.70.Ce Thermodynamic functions and equations of state
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Atomic mixing in ion impact: A collision cascade model

S. Matteson

Appl. Phys. Lett. 39, 288 (1981); http://dx.doi.org/10.1063/1.92675 (3 pages) | Cited 32 times

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The phenomenon of atomic mixing due to the impact of energetic ions is described by a model based upon the theory of random flights. The transport of material is shown to be formally analogous to standard diffusion theory. The formal diffusion constant is derived from first principles using power law potentials and the result of elementary range theory. An approximate formula is given, which is valid for dilute impurity transport in an otherwise homogeneous host matrix. Comparison is made to experimental results of ion irradiation.
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29.40.-n Radiation detectors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
64.75.-g Phase equilibria
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
FREE

Erratum: Stiffness‐controlled variable‐acoustic‐delay line

M. Pappalardo

Appl. Phys. Lett. 39, 291 (1981); http://dx.doi.org/10.1063/1.92884 (1 page)

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Abstract Unavailable
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
99.10.Cd Errata
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