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15 Aug 1981

Volume 39, Issue 4, pp. 295-365

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Picosecond microwave pulses generated with a subpicosecond laser‐driven semiconductor switch

G. Mourou, C. V. Stancampiano, A. Antonetti, and A. Orszag

Appl. Phys. Lett. 39, 295 (1981); http://dx.doi.org/10.1063/1.92719 (2 pages) | Cited 35 times

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A subpicosecond laser has been used to trigger a GaAs photoconductive switch driving a dipole antenna. The microwave transient produced was measured with a correlation technique to have a FWHM of less than 3 psec. This technique was also used in a contactless measurement of the 250‐psec lifetime of a GaAs sample.
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79.20.Ds Laser-beam impact phenomena
42.62.-b Laser applications

Long pulse behavior of the avalanche/self‐sustained discharge pumped XeCl laser

Jeffrey I. Levatter, Karin L. Robertson, and Shao‐Chi Lin

Appl. Phys. Lett. 39, 297 (1981); http://dx.doi.org/10.1063/1.92720 (3 pages) | Cited 17 times

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Homogeneous and stable avalanche/self‐sustained discharges of 200‐nsec duration have been obtained in typical XeCl laser gas mixtures at relatively high gas pressures (1–4 atm) and high energy loadings (100–400 J/liter‐atm). The laser output waveform, however, is found to be surprisingly sensitive to changes in gas pressure and composition. Under certain conditions, the laser power remains nearly constant for 200 nsec, so that the total output energy scales roughly with the discharge duration. The highest XeCl laser pulse energy extracted from a 1‐liter volume in this series of experiments is 3.2 J at ∼4% intrinsic efficiency.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges
78.60.Ps Chemiluminescence
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Thin‐film waveguiding evanescent dye laser with a corner reflecting resonator

K. Sasaki, T. Saito, M. Serizawa, S. Furukawa, and O. Hamano

Appl. Phys. Lett. 39, 300 (1981); http://dx.doi.org/10.1063/1.92721 (2 pages) | Cited 2 times

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A thin‐film optical waveguiding evanescent dye laser was realized by an activated square‐shape Rh6 G top layer on a thin‐film glass waveguide. When a N2 UV laser was focused on a diagonal line of the square dye film by a cylindrical lens, a pair of corners played a role as a corner reflecting resonator. A distinct resonance and transverse modes were observed.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.55.Mv Dye lasers

Multi‐Joule pulses from a sequence band transversely excited atmospheric CO2 laser

R. K. Brimacombe, J. Reid, and T. A. Znotins

Appl. Phys. Lett. 39, 302 (1981); http://dx.doi.org/10.1063/1.92722 (3 pages) | Cited 6 times

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We have used an in‐cavity hot CO2 cell to convert a conventional transversely excited atmospheric (TEA) CO2 laser to operation on the 00 °2 sequence transitions. Careful cavity design enables us to attain efficient energy extraction. Output energies of 6 J per pulse have been obtained from a nonselective cavity, while a grating‐tuned cavity produces numerous sequence lines having output energies in excess of 2 J per pulse.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.72.-g Optical sources and standards

Mechanically scanned B‐scan system for acoustic microscopy of solids

H. K. Wickramasinghe

Appl. Phys. Lett. 39, 305 (1981); http://dx.doi.org/10.1063/1.92723 (3 pages) | Cited 3 times

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We propose a novel mechanically scanned B‐scan system for imaging the interior of solids with diffraction‐limited resolution. By utilizing an additional spherical surface in conjunction with a conventional acoustic lens, it is possible to reduce spherical aberration, (which would otherwise seriously degrade the imaging performance), to a negligible value. In typical situations, it is possible to scan the focus through a depth of several hundred wavelengths.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
43.60.-c Acoustic signal processing
43.58.+z Acoustical measurements and instrumentation
43.20.Fn Scattering of acoustic waves

Single‐crystal Si films on SiO2 prepared by using a stationary graphite heater for lateral epitaxy by seeded solidification

John C. C. Fan, B.‐Y. Tsaur, and M. W. Geis

Appl. Phys. Lett. 39, 308 (1981); http://dx.doi.org/10.1063/1.92724 (3 pages) | Cited 7 times

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Continuous single‐crystal Si films on SiO2 have been prepared by a simplified version of the technique for lateral epitaxy by seeded solidification (LESS). The new method employs transient heating by a simple stationary graphite heater, while the original method utilized two graphite heaters, one of which was moved during LESS processing. The Si films obtained by the one‐heater method are comparable in crystal quality to those prepared by the two‐heater method.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Fq Growth from melts; zone melting and refining
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Evidence for ion‐induced hypersonic shock waves for computer simulations of argon ion bombardment of copper

R. P. Webb and D. E. Harrison

Appl. Phys. Lett. 39, 311 (1981); http://dx.doi.org/10.1063/1.92725 (2 pages) | Cited 12 times

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A molecular dynamics simulation has been used to study the times at which atoms are ejected during sputtering events. Plots of the atom ejection time versus distance from the impact point indicate that many sputtering events occur along a roughly circular front that propagates outward at hypersonic speed.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects

Substrate heating and emitter dopant effects in laser‐annealed solar cells

R. T. Young, R. F. Wood, W. H. Christie, and G. E. Jellison

Appl. Phys. Lett. 39, 313 (1981); http://dx.doi.org/10.1063/1.92704 (3 pages) | Cited 9 times

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This letter provides the first experimental evidence that substrate heating during pulsed‐laser annealing (PLA) of ion‐implanted silicon can significantly improve the electrical properties of the laser recrystalized region due to the reduction of the regrowth velocity. It is also shown that by using the optimum PLA condition, the open‐circuit voltage VOC and the fill factor of ion‐implanted, laser‐annealed solar cells are improved by increasing the emitter dopant concentrations, whereas the short‐circuit current JSC remains fairly constant, results which are in qualitative agreement with theoretical predictions.
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84.60.Jt Photoelectric conversion

Chemical etching and cleaning procedures for Si, Ge, and some III‐V compound semiconductors

D. E. Aspnes and A. A. Studna

Appl. Phys. Lett. 39, 316 (1981); http://dx.doi.org/10.1063/1.92705 (3 pages) | Cited 131 times

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Chemical etching and cleaning procedures that produce the most abrupt dielectric discontinuities between bulk and ambient (cleanest and/or smoothest surfaces) are determined by ellipsometry for single crystals of Si, Ge, and some III‐V compounds. Differences among high‐symmetry orientations for Si and Ge indicate that preferential etching may be a factor in minimizing the amount of interface material left at a surface.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Measurement of HCl electron attachment in relation to XeCl laser kinetics

D. Kligler, Z. Rozenberg, and M. Rokni

Appl. Phys. Lett. 39, 319 (1981); http://dx.doi.org/10.1063/1.92706 (3 pages) | Cited 16 times

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The electron attachment rate constant of HCl is measured in e‐beam‐excited mixtures of N2/HCl and Ar/H2/HCl, by observing the electron current decay after termination of an e‐beam pulse. The possible enhancement of attachment due to vibrational excitation of HCl under e‐beam pumping is studied, by performing measurements with e‐beam currents differing by a factor of 30. The consequences of the results for XeCl laser kinetics are discussed.
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78.60.Ps Chemiluminescence
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Electron beam annealing of selenium‐implanted gallium arsenide

N. J. Shah, H. Ahmed, and P. A. Leigh

Appl. Phys. Lett. 39, 322 (1981); http://dx.doi.org/10.1063/1.92707 (3 pages) | Cited 13 times

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The multiply scanned electron beam method has been applied to annealing selenium implanted gallium arsenide. The conditions necessary to give good electrical activation and mobility have been established for doses from 5×1012 to 1×1014 ions cm−2. Partial activation was achieved in uncapped samples for doses of 1×1013 cm−2 and greater. However, to achieve higher activation of these doses, and significant activation of low doses, encapsulation with Si3N4 was necessary. It is shown that rapid electron beam annealing lasting only a few seconds gave equivalent results to conventional furnace annealing methods.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
79.20.Kz Other electron-impact emission phenomena

Image force effects on carrier collection in a‐Si:H solar cells

Min‐Koo Han, Wayne A. Anderson, R. Lahri, and John Coleman

Appl. Phys. Lett. 39, 325 (1981); http://dx.doi.org/10.1063/1.92708 (3 pages) | Cited 1 time

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A modified carrier collection model of a‐Si:H Schottky‐barrier solar cells is proposed to explain the falloff of short wavelength carrier collection efficiency. Schottky‐barrier lowering due to image force effects alters the potential distribution near the metal‐semiconductor interface. This altered potential decreases the carrier collection in a‐Si:H solar cells by as much as 30%. Design considerations to improve carrier collection efficiency are also proposed.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Slip deformation and melt threshold in laser‐pulse‐irradiated Al

D. M. Follstaedt, S. T. Picraux, P. S. Peercy, and W. R. Wampler

Appl. Phys. Lett. 39, 327 (1981); http://dx.doi.org/10.1063/1.92709 (3 pages) | Cited 14 times

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We have examined pulse laser‐irradiated 〈110〉 Al single crystals near the threshold energy for melting by ion channeling and electron microscopy. We find that slip deformation occurs at incident energies <3.5 J/cm2, where melting does not occur for our 20 nsec (full width at half maximum) pulse width, as well as at energies ≳3.5J/cm2, where a near‐surface layer is melted. This slip deformation results in an increase in the channeling minimum yield χmin, which is attributed to small‐angle misalignments between slip planes across the surface. The abrupt increase in χmin with melting suggests that channeling can provide a sensitive monitor of the threshold for melting.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Gh Other heat and thermomechanical treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Improved oxide of metal‐oxide‐silicon capacitors resulting from backsurface argon implantation

B. H. Yun

Appl. Phys. Lett. 39, 330 (1981); http://dx.doi.org/10.1063/1.92710 (3 pages) | Cited 4 times

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Argon ions were implanted at the backsurface of silicon wafers prior to the formation of the oxide of the metal‐oxide‐silicon capacitors. The implantation resulted in improved oxide. The improvement is speculated to be a consequence of the gettering of the metallic impurities by the dislocations caused by the ion implantation gettering which occurs during oxidation and prevents the impurities from being absorbed into the oxide of the subsequent capacitors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.-c Electronic transport in interface structures
73.61.Ng Insulators
73.40.Gk Tunneling

High‐field transport of holes in silicon

Phillip M. Smith, Jeffrey Frey, and P. Chatterjee

Appl. Phys. Lett. 39, 332 (1981); http://dx.doi.org/10.1063/1.92711 (2 pages) | Cited 10 times

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The room‐temperature drift velocity of holes in silicon has been measured for electric fields ranging from 9 to 234 kV/cm using a microwave time‐of‐flight technique. The measured velocity saturates at a value of 0.96±0.05×107 cm/sec at a field strength of 175 kV/cm.
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72.20.Ht High-field and nonlinear effects
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Al‐Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxy

Robert C. Miller and Won T. Tsang

Appl. Phys. Lett. 39, 334 (1981); http://dx.doi.org/10.1063/1.92712 (2 pages) | Cited 21 times

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A heterostructure, consisting of two GaAs quantum wells each of 40 Å width separated by a 40‐Å Al0.5Ga0.5As barrier, has been grown by molecular beam epitaxy and examined optically for Al‐Ga disorder (alloy clustering). The photoluminescent and excitation spectra showed no evidence of clustering, in marked contrast to results on a similar structure grown by metal‐organic chemical vapor deposition. Thus any clusters present must be less than 40 Å in diameter. The spectra also support an island‐like interface with steps of ∼one monolayer in height and ≳300 Å in lateral extent.
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68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors

Charge‐coupled devices in epitaxial HgCdTe/CdTe heterostructure

M. E. Kim, Y. Taur, S. H. Shin, G. Bostrup, J. C. Kim, and D. T. Cheung

Appl. Phys. Lett. 39, 336 (1981); http://dx.doi.org/10.1063/1.92713 (3 pages) | Cited 4 times

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An n‐channel metal‐insulator‐semiconductor charge‐coupled device has been successfully demonstrated in p‐type epitaxial Hg0.7Cd0.3Te (λco≃5.0 μm, 77 K) grown by liquid‐phase epitaxy on CdTe substrate. A three‐bit, three‐phase device was operated at 77 K, yielding a charge transfer efficiency greater than 0.995 between 5 and 50 kHz clock frequencies. Ion‐implanted n+/p diodes facilitated signal input and direct output signal detection.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

The low‐temperature thermal expansion of Hg1−xCdxTe alloys

O. Caporaletti and G. M. Graham

Appl. Phys. Lett. 39, 338 (1981); http://dx.doi.org/10.1063/1.92714 (2 pages) | Cited 11 times

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The linear coefficient of thermal expansion of semiconducting Hg1−xCdxTe has been determined for alloy compositions x = 0.20 and 0.30, of interest to infrared detector technology. The temperature dependence is similar to that of other compounds of zinc blende structure. The thermal expansion coefficient becomes negative at 64 K and is insensitive to composition except below 30 K, where the alloys richer in HgTe exhibit a deeper negative minimum.
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65.40.De Thermal expansion; thermomechanical effects
85.60.Gz Photodetectors (including infrared and CCD detectors)

Modulated barrier photodiode: A new majority‐carrier photodetector

C. Y. Chen, A. Y. Cho, P. A. Garbinski, C. G. Bethea, and B. F. Levine

Appl. Phys. Lett. 39, 340 (1981); http://dx.doi.org/10.1063/1.92715 (3 pages) | Cited 24 times

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A new majority‐carrier photodetector, called a modulated barrier photodiode (MBP), grown by molecular beam epitaxy has been developed. In sharp contrast to a bipolar phototransistor, the optical gain of MBP increases with decreasing incident power. An optical gain of 1000 at 1.5 nW incident power and a fall time of 600 psec have been obtained. In addition to the application for uses as a detector in an optical communication system, the device points to the feasibility of realizing a solid‐state triode.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Periodic motion of the crystallization front during beam annealing of Si films

R. A. Lemons and M. A. Bösch

Appl. Phys. Lett. 39, 343 (1981); http://dx.doi.org/10.1063/1.92716 (3 pages) | Cited 21 times

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Periodic surface topography is observed in Si films deposited on fused quartz when the films are crystallized by a scanning laser or electron beam. The formation and character of this topography depends upon the structure of the Si film. With amorphous Si, periodic features can be formed at the leading edge of the beam. We thick these are produced by self sustained crystallization as has been previously studied in Ge and other materials. Liberation of latent heat in the film enables the crystallization front to propagate a short distance ahead of the beam. In the moving temperature gradient this motion is periodic and therefore leaves a periodic crystal grain pattern. With polycrystalline silicon films, recrystallization requires the beam to melt the film. Periodic structures form at the trailing edge of the molten pool. Similar ripples have been studied in other materials. The temperature distribution in the melt can cause a surface tension gradient that pulls material to the edges. When this material solidifies, expansion of the silicon may enhance the ripple amplitude.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Fq Growth from melts; zone melting and refining

Oxygen effect on the electrical characteristics of polycrystalline silicon films

R. Angelucci, L. Dori, and M. Severi

Appl. Phys. Lett. 39, 346 (1981); http://dx.doi.org/10.1063/1.92717 (3 pages) | Cited 6 times

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420‐nm‐thick polycrystalline silicon films doped with phosphorus after atmospheric‐pressure deposition have been investigated as a function of deposition rate. A correlation between deposition rate and oxygen content into polysilicon film, as determined by electron microprobe analysis, has been established, which accounts for the deposition rate effects on the electrical properties and grain size of the film. Layers deposited at rates lower than about 40 nm/min are characterized by an oxygen content of the order of 1% in weight, which inhibits grain growth during high‐temperature processes and increases sheet resistance by reducing both Hall mobility and carrier concentration.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

New Fermi energy pinning behavior of Au on GaAs (110) suggesting increased Schottky‐barrier heights on n‐type GaAs

Perry Skeath, C. Y. Su, I. Hino, I. Lindau, and W. E. Spicer

Appl. Phys. Lett. 39, 349 (1981); http://dx.doi.org/10.1063/1.92718 (3 pages) | Cited 20 times

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An unusually large Schottky barrier (≳1.1 eV) is demonstrated by studies of Au on atomically clean n‐type GaAs. It is suggested that this large barrier is produced by Au moving beneath the surface and introducing new gap states close to the valence band maximum. These new gap states can overcome the defect states (produced during the adsorption process) that normally pin the Fermi energy near midgap, thus increasing the barrier height. Starting with an atomically clean surface appears essential.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.40.Fy Semiconductors

Recovery of range‐zone luminescence by pulsed laser annealing in Cd+‐implanted GaAs

C. B. Norris and P. S. Peercy

Appl. Phys. Lett. 39, 351 (1981); http://dx.doi.org/10.1063/1.92726 (3 pages) | Cited 4 times

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The effects of 300‐K implantation of 200‐keV Cd+ ions and subsequent pulsed laser annealing in GaAs were investigated by means of depth‐resolved cathodoluminescence at 80 K. We found that lattice order could be restored sufficiently to increase the implanation‐quenched luminescence by 2–3 orders of magnitude with either ruby or Nd:glass lasers. Thus the luminescence is recovered to within an order of magnitude of that in unimplanted material.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.U- Doping and impurity implantation

Influences of gas flow on chemical vapor deposition of superconducting Nb‐Ge films

Mitsumasa Suzuki, Hiroshi Onodera, Takeshi Anayama, Gin‐ichiro Oya, and Yutaka Onodera

Appl. Phys. Lett. 39, 354 (1981); http://dx.doi.org/10.1063/1.92727 (3 pages)

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Nb‐Ge films, which have been prepared by chemical vapor deposition, have been studied for superconducting transition temperatures, crystal structures, and growth morphology. In the films a relationship was obtained among positions at which the highest Tc films are deposited, the degree of orientation for A15 crystallites is lowered, and the microstructures for film surface change has been found. This can be explained in terms of a higher deposition rate of Ge than that of Nb.
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74.25.-q Properties of superconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.78.-w Superconducting films and low-dimensional structures

Observation of large room‐temperature coercivity in melt‐spun Nd0.4Fe0.6

John J. Croat

Appl. Phys. Lett. 39, 357 (1981); http://dx.doi.org/10.1063/1.92728 (2 pages) | Cited 30 times

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An intrinsic room‐temperature coercivity of 7.45 kOe has been found in melt‐spun Nd0.4Fe0.6; this value is the largest ever reported for a rare‐earth–iron alloy. A significant correlation was found between quench rate and coercivitiy, suggesting that the quenched alloys consist of fine crystallites or clusters, whose average particle size can be matched to the single‐domain optimum by the appropriate quench rate.
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75.40.-s Critical-point effects, specific heats, short-range order
75.50.Cc Other ferromagnetic metals and alloys
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