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15 Oct 1981

Volume 39, Issue 8, pp. 581-672

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Photoluminescence of carbon‐implanted GaAs

G. B. Stringfellow, W. Koschel, F. Briones, J. Gladstone, and G. Patterson

Appl. Phys. Lett. 39, 581 (1981); http://dx.doi.org/10.1063/1.92830 (2 pages) | Cited 23 times

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The 5‐K photoluminescence (PL) spectra of undoped semi‐insulating GaAs are observed as a function of carbon implantation dose (after 850°C annealing using a SiO2 cap). Results show that although the intensity of the bound exciton line at 1.514 eV remains fairly independent of carbon concentration up to 1017 cm−3 carbon, the intensity of the conduction band to acceptor peak at ∼1.494 eV increases monotonically with carbon implant dose. This is the first direct confirmation that the 1.494‐eV transition is due to carbon. The observed correlation between implanted carbon doses and PL intensities at high excitation levels is the basis of an analytic technique for C assessment in GaAs.
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78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Preheat‐aided optical disc recording

Mark W. Goldberg and J. Christopher Cassidy

Appl. Phys. Lett. 39, 583 (1981); http://dx.doi.org/10.1063/1.92831 (3 pages) | Cited 1 time

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Analytic and experimental results are presented to demonstrate the advantages of using a cw preheat spot in conjunction with a larger write spot in an optical disc recording system. When compared with conventional single spot writing, the use of preheat allows smaller holes to be recorded while requiring up to 50% less power from the write source. Results are presented for a preheat‐to‐write‐spot ratio that assumes a He‐Cd laser preheat source and semiconductor laser write source. An increase in packing density of almost a factor of 2 and an increase in bandwidth of 15% are demonstrated.
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79.20.Ds Laser-beam impact phenomena

Multiple‐path fission‐foil nuclear lasing of Ar‐Xe

R. J. De Young

Appl. Phys. Lett. 39, 585 (1981); http://dx.doi.org/10.1063/1.92832 (3 pages) | Cited 6 times

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Nuclear lasing of Ar 10% Xe at 760 Torr with a thermal neutron flux of 3.5×1016 n/cm2 s has produced an output power of 50 W. Lasing occurred at 2.6 μm in Xe‐I. The argon buffer gas is shown to efficiently stop fission fragments at reasonable pressures emitted from 235U3O8 coatings. A unique folded optical path was used to increase the excited gas volume which in turn increases laser output.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Detection of 1.5‐μm wavelength laser light emission by infrared‐excitable phosphors

Yoh Mita

Appl. Phys. Lett. 39, 587 (1981); http://dx.doi.org/10.1063/1.92833 (3 pages) | Cited 15 times

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Laser emission from a 1.5‐μm wavelength InGaAsP/InP diode was shown to be efficiently converted to visible or to near‐infrared light by Er‐containing infrared‐excitable phosphors. The visible emission has been markedly enhanced in Yb‐sensitized phosphors under 0.97‐μm wavelength auxiliary light irradiation especially under weak 1.5‐μm wavelength excitation. The enhancement mechanism has proved to be Yb‐sensitized quantum counter action.
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78.55.Hx Other solid inorganic materials
85.60.Jb Light-emitting devices
85.60.Gz Photodetectors (including infrared and CCD detectors)

Transmission of sound through a porous disk

Jens M. Hovem

Appl. Phys. Lett. 39, 590 (1981); http://dx.doi.org/10.1063/1.92834 (2 pages) | Cited 2 times

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The transmission coefficient for sound at an interface between a fluid and a porous medium has been derived. Numerical values are compared with experimental values obtained by Plona [Appl. Phys. Lett. 36, 259 (1980)] who transmitted a short ultrasonic pulse through a porous disk. The good agreement between theory and experiment supports the conclusion that a second compressional wave has been observed.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.20.Hq Velocity and attenuation of acoustic waves

Time‐ and space‐resolved temperature of a 10.6‐μm laser‐irradiated foil

H. Nishimura, M. Yagi, F. Matsuoka, K. Yamada, T. Yamanaka, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 39, 592 (1981); http://dx.doi.org/10.1063/1.92835 (3 pages) | Cited 6 times

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Energy flow to a target rear surface due to hot electrons was experimentally studied by irradiating a 10‐μm wavelength laser. Lateral heat conduction produced a plasma of low and uniform temperature, whose size was nearly one order larger than that of a laser focal spot for plane targets. Experimental results were simulated by using a one‐dimensional hydrodynamic simulation code to investigate the effects of hot electron diffusion.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Fi Transport properties
52.58.-c Other confinement methods
52.25.Kn Thermodynamics of plasmas

Enhancement of the Young’s modulus in the ultrafine Cu‐Nb filamentary composites

David E. Cohen and J. Bevk

Appl. Phys. Lett. 39, 595 (1981); http://dx.doi.org/10.1063/1.92842 (3 pages) | Cited 7 times

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Measurements of the Young’s modulus are reported for in‐situ formed Cu‐Nb wire composites containing 7.5 and 15.0 vol.% niobium filaments. Comparison of the experimental values for the as‐drawn and annealed wires shows rapidly diverging trends with decreasing wire diameter. In composites with the smallest filaments (50–200 Å) the modulus increases by almost 100% upon annealing and exceeds the maximum values calculated from bulk elastic constants. However, plastic strain (in elongation) of as little as 0.02% results in a substantial (∼25%) reduction in modulus, suggesting that most of the enhancment in the annealed composites originates from the thermally induced elastic strains at the matrix‐filament interfaces.
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62.20.D- Elasticity
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs

Y. I. Nissim, L. A. Christel, T. W. Sigmon, J. F. Gibbons, T. J. Magee, and R. Ormond

Appl. Phys. Lett. 39, 598 (1981); http://dx.doi.org/10.1063/1.92816 (3 pages) | Cited 19 times

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The complete solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs was obtained during a short (10 min) capless furnace anneal at a temperature of 475 °C. Two factors believed responsible for the incomplete regrowth of layers have been identified. First, the damage density from the implant should not exceed a critical value determined by a Boltzmann calculation. Second, the growth of polycrystalline material from the surface observed by transmission electron microscopy is a competitive mechanism. As+ implants, whose doses and energies were selected to achieve the correct damage density, and to ensure that its value was maintained in the near‐surface region, led to a complete recrystallization.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Characterization of wet (D2O) thermal oxidation of silicon by secondary ion mass spectrometry

J. C. Mikkelsen

Appl. Phys. Lett. 39, 601 (1981); http://dx.doi.org/10.1063/1.92817 (3 pages) | Cited 12 times

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Secondary ion mass spectrometry was used to profile deuterium concentrations [D] in 100‐200‐nm‐thick SiO2 films, which were grown by thermal oxidation of silicon in D2O steam pressures of 0.05‐8 atm and at temperatures of 550‐1000 °C. Deuterium was used to simulate hydrogen chemistry in steam oxidations and is readily detected in the presence of high background concentrations of hydrogen in the sputtering ambient. Structure observed here in D profiles, and previously in H profiles, near the SiO2‐Si interface are due predominantly to abrupt changes in ion yields as the surface charging conditions change. The 1‐atm profiles generally exhibit an increase in [D] in the SiO2 toward the Si interface; the average [D] is nearly constant at 0.6‐1.0×1020 cm−3 for oxidations at 800‐1000 °C and rises to 6×1020 cm−3 at 600 °C. It is argued that the D is predominantly in the form of Si‐OD. At 800 °C and 0.05‐8 atm, the average OD concentration in the oxide film is approximately proportional to (steam pressure)1/2. This is the first demonstration of the simple equilibrium reaction between ambient water and the as‐grown oxide layer.
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68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Rapid isothermal annealing of ion implantation damage using a thermal radiation source

R. T. Fulks, C. J. Russo, P. R. Hanley, and T. I. Kamins

Appl. Phys. Lett. 39, 604 (1981); http://dx.doi.org/10.1063/1.92818 (3 pages) | Cited 41 times

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The rapid annealing of ion implantation damage in silicon using the radiation from a graphite heater has been demonstrated. Complete 3‐in.‐diam wafers were annealed in a single 10‐sec exposure with high activation for implants of boron (50 keV; 1×1015 cm−2) and moderate activation for high‐dose arsenic implants (140 keV; 6×1015 cm−2). Dopant redistribution was ∼1000 Å for boron and ∼200 Å for arsenic. Leakage currents of implanted p+n and n+p diodes were comparable to those of furnace‐annealed control wafers and indicate good crystallinity in the depletion region near the junction. Diode leakage uniformity across the wafers was also excellent. C‐V measurements on oxides annealed by this technique showed flatband voltages within 0.5 V of those measured on control wafers. This method of annealing implant damage is a practical alternative to those involving more elaborate power sources such as lasers, electron beams, or high‐intensity arc lamps.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.72.U- Doping and impurity implantation
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Molecular‐beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holder

K. Y. Cheng, A. Y. Cho, and W. R. Wagner

Appl. Phys. Lett. 39, 607 (1981); http://dx.doi.org/10.1063/1.92819 (3 pages) | Cited 18 times

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Ga0.47In0.53As and Al0.48In0.52As were grown lattice matched to InP substrates with a rotating substrate holder. The Ga, In, and Al beams were supplied by separate effusion cells and the uniformity of the resulting layers was evaluated with x‐ray rocking curves for different rotation speeds. Lateral variation of the lattice constant as small as 10−5 per cm may be achieved with a rotation speed of 3 rpm. The full width at half‐maximum of the x‐ray spectrum from the epitaxial layer is comparable to that of the substrate indicating that there is practically no compositional grading.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.C- X-ray diffraction and scattering
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors

Spectrum‐controllable color sensors using organic dyes

K. Kudo and T. Moriizumi

Appl. Phys. Lett. 39, 609 (1981); http://dx.doi.org/10.1063/1.92820 (3 pages) | Cited 10 times

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An organic color sensor was fabricated by using p‐ and n‐type dyes. The cell has a layered structure of Zn0/merocyanine/rhodamine B, which acts as an n‐p‐n‐ photodiode. The spectral sensitivity of the cell was changed remarkably by bias voltage, and a good separation of the spectral responses was obtained in the visible‐spectrum region.
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85.60.Pg Display systems
72.80.Le Polymers; organic compounds (including organic semiconductors)
42.66.Ne Color vision: color detection, adaptation, and discrimination
33.20.Kf Visible spectra

Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

D. L. Morel and T. D. Moustakas

Appl. Phys. Lett. 39, 612 (1981); http://dx.doi.org/10.1063/1.92821 (3 pages) | Cited 4 times

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The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a‐SiHx /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence‐band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band‐gap regime.
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72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

GaAs‐AlxGa1−x As superlattices as sources of polarized photoelectons

S. F. Alvarado, F. Ciccacci, and M. Campagna

Appl. Phys. Lett. 39, 615 (1981); http://dx.doi.org/10.1063/1.92822 (3 pages) | Cited 17 times

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We have measured the spin polarization of electrons optically pumped by polarized light and photoemitted from GaAs‐AlxGa1−xAs superlattices with negative electron affinity. We find a maximum polarization of 49%, in contrast to the expectations related to polarized photoluminescence studies. Reasons for these findings based on the difference between photoemission from negative electron affinity sources and photoluminescence are discussed.
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81.65.-b Surface treatments

Hot‐carrier effects in 1.3‐μ In1−xGaxAsyP1−y light emitting diodes

J. Shah, R. F. Leheny, R. E. Nahory, and H. Temkin

Appl. Phys. Lett. 39, 618 (1981); http://dx.doi.org/10.1063/1.92823 (3 pages) | Cited 16 times

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We report the first observation of carrier heating effects for In1−xGaxAsyP1−y 1.3‐μ light emitting diodes, including variation of carrier temperature with injection current and ambient temperature. These results demonstrate that carrier temperature reaches 400 K at 2.5×104 A/cm2 (260 mA) for an LED with room‐temperature ambient. Such significant heating must be taken into account in modeling device performance.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Electron Hall mobility in GaxIn1−xAsyP1−y calculated with two‐longitudinal‐optical‐phonon model

Y. Takeda, M. A. Littlejohn, and J. R. Hauser

Appl. Phys. Lett. 39, 620 (1981); http://dx.doi.org/10.1063/1.92824 (2 pages) | Cited 8 times

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GaInAsP lattice matched to InP is known to have two well‐resolved InP‐like and InGaAs‐like longitudinal optical (LO) phonons over the composition range 0<y<1. Here for the first time the electron Hall mobilities in GaInAsP are calculated by the iterative technique taking the scattering due to the two LO phonons into account. The results show a further downward bowing of the mobilities than those calculated with one‐LO‐phonon model.
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72.20.Dp General theory, scattering mechanisms
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Plasma annealing of ion implanted semiconductors

N. J. Ianno, J. T. Verdeyen, S. S Chan, and B. G. Streetman

Appl. Phys. Lett. 39, 622 (1981); http://dx.doi.org/10.1063/1.92825 (3 pages) | Cited 19 times

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An electron beam generated by a gas discharge is used to anneal ion implanted silicon. The discharge operating parameters as well as the electron beam energy are measured. Finally, plasma annealing of BF+2 implanted n‐type silicon is examined by observing the sheet resistivity of the implanted layers and the resulting diode characteristics.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
41.75.Fr Electron and positron beams

Modification of grain boundaries in polycrystalline silicon with fluorine and oxygen

David S. Ginley

Appl. Phys. Lett. 39, 624 (1981); http://dx.doi.org/10.1063/1.92826 (3 pages) | Cited 7 times

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Hydrogen plasmas have been shown to significantly reduce barrier heights and recombination center densities in the grain boundaries in polycrystalline silicon. These results have stimulated interest in the use of other modifying agents. We demonstrate here that the exposure of n‐type polycrystalline silicon to fluorine and oxygen in molecular and atomic forms can result in increased potential barrier heights. This has implications for the development of silicon varistors and capacitors for use in integrated circuits.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
72.40.+w Photoconduction and photovoltaic effects
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Condensation of bombarding gallium ions on a silicon surface

T. Ishitani, A. Shimase, and H. Tamura

Appl. Phys. Lett. 39, 627 (1981); http://dx.doi.org/10.1063/1.92827 (2 pages) | Cited 10 times

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Direct observation of bombarding 5–15‐keV Ga+ ion condensation on a Si target is achieved using a scanning ion microscope with a liquid‐Ga ion source. The liquidlike pieces of condensed Ga move about easily to join or split. Condensation takes place beyond a critical ion dose, which is roughly explained by an implanted‐ion build‐up model.
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61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Low barrier height Schottky mixer diode using super thin silicon films by molecular beam epitaxy

William C. Ballamy and Yusuke Ota

Appl. Phys. Lett. 39, 629 (1981); http://dx.doi.org/10.1063/1.92828 (2 pages) | Cited 3 times

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Low barrier (≲0.4 eV) microwave mixer diodes were fabricated by means of silicon molecular beam epitaxy (Si MBE). Schottky barrier lowering was achieved by using a thin highly doped epitaxial layer to modify the electric field near the surface. The advantages of silicon MBE for these devices arise from the ability to grow epitaxial layers which are very precisely controlled in thickness and in the spatial distribution of dopant. The resulting diodes have both a low barrier height and a very low forward series resistance.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

The role of stabilized back‐surface damage in controlling internal SiOx nucleation and denudation zones in Si

T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furman, and C. A. Evans

Appl. Phys. Lett. 39, 631 (1981); http://dx.doi.org/10.1063/1.92829 (3 pages) | Cited 4 times

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Using two‐step annealing of wafers containing mechanically induced back‐surface damage, we have shown that the presence of stabilized damage regions controls the development of front‐surface defect denudation zones and internal SiOx nucleation. Using data from transmission electron microscopy, secondary ion mass specrometry profiling, and secondary ion microscopy measurements we have demonstrated that little or no direct correlation exists between measured (front‐surface) oxygen depletion widths and defect denudation zone widths. Primary anneals at temperatures <600 °C have also been shown to produce no significant or measurable depletion of oxygen at the front surface of wafers.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.-y Defects and impurities in crystals; microstructure

Laser bonded n‐GaAs/p‐GaSb heterojunction intercell Ohmic contact

H. T. Yang and S. W. Zehr

Appl. Phys. Lett. 39, 634 (1981); http://dx.doi.org/10.1063/1.92836 (3 pages)

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An n‐GaAs/p‐GaSb heterojunction intercell Ohmic contact (IOC) has been formed by a laser bonding procedure. Resistance per unit area of 5×10−3 Ω‐cm2 has been obtained as an upper limit. This IOC is able to provide sufficiently good electrical connection between two adjacent subcells of a monolithic multicolor solar converter operating at several hundred suns concentration with the insignificant I2R loss.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Cg Contact resistance, contact potential
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Electron bombardment induced conductivity in amorphous silicon

Yoshinori Hatanaka, Hiroyasu Oi, and Takao Ando

Appl. Phys. Lett. 39, 637 (1981); http://dx.doi.org/10.1063/1.92837 (3 pages) | Cited 1 time

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The electron multiplication factors of electron bombardment induced conductivity (EBIC) of 300–500 were obtained with a hydrogenated amorphous silicon (a‐Si:H) film of higher resistivity than 1010 Ω cm at an accelerating voltage of 7 kV. The response time of the EBIC current for a pulsed primary electron beam was determined to be shorter than 1 ms for both build‐up and decay lags. It is found that an EBIC target of an a‐Si:H film has promising properties for application to imaging devices at low light levels.
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72.80.Ng Disordered solids
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
85.60.-q Optoelectronic devices
84.47.+w Vacuum tubes

Transparent and highly conductive films of ZnO prepared by rf reactive magnetron sputtering

J. B. Webb, D. F. Williams, and M. Buchanan

Appl. Phys. Lett. 39, 640 (1981); http://dx.doi.org/10.1063/1.92815 (3 pages) | Cited 63 times

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Highly conductive films of zinc oxide have been prepared by reactive rf magnetron sputtering from an oxide target. Film conductivities ranging from ∼10−8 Ω−1 cm−1 to 5×102 Ω−1 cm−1 can be obtained depending on the sputter conditions. Films with sheet resistivities of 85 Ω/☒ showed little absorption and ∼90% transmission between λ = 4000→8000 Å. A second low power discharge at the substrate is used to initiate growth of the highly conducting material on room‐temperature substrates. Thus, during the deposition of insultating ZnO, turning on this second discharge causes the deposition to ’’switch’’ from low conductivity to high conductivity material. This is of particular interest in the fabrication of semiconductor‐insulator‐semiconductor solar cells where precise control over the thickness of the insulating layer is necessary and where a highly transparent and conductive window‐junction layer is required.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Colorless, transparent, c‐oriented aluminum nitride films grown at low temperature by a modified sputter gun

S. Onishi, M. Eschwei, S. Bielaczy, and W‐C. Wang

Appl. Phys. Lett. 39, 643 (1981); http://dx.doi.org/10.1063/1.92838 (3 pages) | Cited 5 times

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Colorless, transparent, pure c‐oriented AlN films have been deposited on glass substrates, with and without Cr‐Au films, utilizing a modified sputter gun. The design of the gun and of the sputtering system helps to keep the growing surface free from charged particle bombardment and excessive heat by radiation. Attention will be focused mainly on the effect of total sputtering pressure on the quality of the AlN films. A very strong magnetic field makes it possible to sputter at pressures as low as 0.133 Pa (1 μTorr). This high vacuum sputtering improves c‐orientation, surface smoothness, film color, transparency, deposition rate, and thermal expansion coefficient matching. The deposition rate of the sputter gun is as high as 2.4 μm/h at input power of 300 W.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
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