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1 Nov 1981

Volume 39, Issue 9, pp. 677-777

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Optical assessment of the main electron trap in bulk semi‐insulating GaAs

G. M. Martin

Appl. Phys. Lett. 39, 747 (1981); http://dx.doi.org/10.1063/1.92852 (2 pages) | Cited 317 times

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Near‐infrared optical absorption in undoped bulk GaAs ingots is shown to be due essentially to the presence of the main deep donor EL2. Measurement of the corresponding absorption represents the first known method of quantitative determination of that level in semi‐insulating material. Furthermore, complete quenching of the corresponding absorption is shown to occur under high intensity illumination. This strong effect, reported for the first time, can be directly related to the existence of a metastable state for the level EL2 presenting a strong lattice relaxation.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Efficient Si solar cells by low‐temperature solid‐phase epitaxy

B‐Y. Tsaur, G. W. Turner, and John C. C. Fan

Appl. Phys. Lett. 39, 749 (1981); http://dx.doi.org/10.1063/1.92878 (3 pages) | Cited 10 times

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Solid‐phase epitaxial Si layers of uniform thickness have been grown at 400–500 °C by transport of Si atoms from an amorphous Si film through an Al film deposited on 〈100〉 single crystal or polycrystalline n‐type Si substrates. The epitaxial Si layers are strongly p type due to Al doping, and good rectifying junctions are formed between these layers and the substrates. Solar cells with conversion efficiencies at AM1 of 10.4 and 8.5% have been fabricated on 〈100〉 Si and polycrystalline Si substrates, respectively, without the use of an antireflection coating or back‐surface field structure.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
84.60.Jt Photoelectric conversion

Oxidation of silicon by ion implantation and laser irradiation

S. W. Chiang, Y. S. Liu, and R. F. Reihl

Appl. Phys. Lett. 39, 752 (1981); http://dx.doi.org/10.1063/1.92879 (3 pages) | Cited 8 times

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Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2 layers. Results of differential Fourier‐transformed infrared spectroscopy and transmission electron microscopy confirm the formation of oxide layers. Segregation of oxygen toward the surface was observed by secondary ion mass spectroscopy and correlated with resolidification velocities, which vary as a function of laser energy densities.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.61.Ng Insulators
79.20.Ds Laser-beam impact phenomena
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses

J. M. Liu, R. Yen, H. Kurz, and N. Bloembergen

Appl. Phys. Lett. 39, 755 (1981); http://dx.doi.org/10.1063/1.92843 (3 pages) | Cited 98 times

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Ultrafast melting and resolidification on a (111) sufarce of a silicon crystal wafer, induced by 20‐ps pulses at 532‐nm wavelength, is accompanied by the emission of charged particles. This emission is studied as a function of pulse energy, in combination with time‐resolved reflectivity changes and post‐annealing morphology. The data provide evidence that thermalization time for a dense carrier plasma and the lattice is shorter than 10−11 s.
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64.60.-i General studies of phase transitions
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
79.20.Ds Laser-beam impact phenomena
81.10.Fq Growth from melts; zone melting and refining

Location of impurities in compounds by asymmetry of channeling dips

J. U. Andersen, N. G. Chechenin, and Zhang Zu Hua

Appl. Phys. Lett. 39, 758 (1981); http://dx.doi.org/10.1063/1.92844 (3 pages) | Cited 20 times

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The location of substitutional impurities in GaP (Sb and In) has been investigated by channeling. The sites may be determined from the width of 〈110〉 backscattering dips, but a new technique based on asymmetry of the channeling dips is developed, which appears to be more powerful for compounds with ZnS structure. It requires smaller ion doses and may be applied also to compounds such as GaAs with nearly equal atomic number of the compound constituents. The technique may also be applied to determine the stacking order in a 〈111〉 direction of such compounds.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Josephson single‐flux‐quantum logic circuits using niobium weak links

H. Tamura, Y. Okabe, and T. Sugano

Appl. Phys. Lett. 39, 761 (1981); http://dx.doi.org/10.1063/1.92845 (3 pages) | Cited 7 times

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Josephson logic circuits using fluxoid quantization in a one‐junction interferometer to represent logical states have been fabricated from thin films of Nb by means of photolithography, electron beam lithography, and reactive ion etching. A variable thickness bridge is used as a Josephson junction in the one‐junction interferometer. The logic circuits have shown AND and OR logic functions.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Thermal fluctuations and the phase locking of two nearby Josephson junctions

Vinay Ambegaokar and Makoto R. Arai

Appl. Phys. Lett. 39, 763 (1981); http://dx.doi.org/10.1063/1.92846 (3 pages) | Cited 5 times

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The dynamics of two small‐capacitance, weakly coupled Josephson junctions are analyzed, including thermal noise. The phenomena of phase locking, line narrowing, and coherence emerge from the calculation, which provides the basis for a semiquantitative understanding of recent experimental work on this system.
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74.50.+r Tunneling phenomena; Josephson effects

High‐field superconducting properties of the composite‐processed Nb3Sn with Nb‐Ti alloy cores

K. Tachikawa, T. Asano, and T. Takeuchi

Appl. Phys. Lett. 39, 766 (1981); http://dx.doi.org/10.1063/1.92847 (3 pages) | Cited 35 times

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The Nb3Sn layer growth rate, the upper critical field and the critical current density in high fields of the composite‐processed Nb3Sn are greatly enhanced by the titanium addition to the niobium core. This addition yields a Jc (Nb3Sn layer) value of over 1×105 A/cm2 at 15 T. After the reaction, large amount of titanium is incorporated into the Nb3Sn layer. The optimal amount of titanium addition to the niobium core is about 2 at. %. The Nb‐Ti/Cu‐Sn composite wire seems to be quite promising for applications in magnetic fields up to at least 15 T.
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74.25.Sv Critical currents
74.25.Op Mixed states, critical fields, and surface sheaths
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

Laser heating of thermoluminescent dielectric layers

P. Bräunlich, J. Gasiot, J. P. Fillard, and M. Castagné

Appl. Phys. Lett. 39, 769 (1981); http://dx.doi.org/10.1063/1.92848 (3 pages) | Cited 9 times

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Heating with pulsed or continuous CO2‐laser beams is shown to be an attractive means for rapid evaluation of discrete or continuous two‐dimensional arrays of small or thin thermoluminescent samples. Applications of the novel laser heating techniques to thermoluminescence imaging of spatial dose distributions of ionizing radiation and to the measurement of two‐dimensional temperature distributions in high‐laser power dielectric coating are discussed.
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78.60.Kn Thermoluminescence

Temperature dependence of the pyroelectric response of vinylidene fluoride trifluoroethylene copolymer and the effect of its poling conditions

Hiroki Yamazaki, Junichi Ohwaki, Takeshi Yamada, and Toyoki Kitayama

Appl. Phys. Lett. 39, 772 (1981); http://dx.doi.org/10.1063/1.92849 (2 pages) | Cited 11 times

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Vinylidene fluoride trifluoroethylene copolymer VDF‐TrFE was found to be pyroelectric when poled by application of dc high field. Temperature dependence of its pyroelectric response and the effects of poling conditions were investigated. It was shown that there existed a critical temperature at 70 °C above which pyroelectricity vanished. The pyroelectric coefficient increased with the increase in poling temperature with a tendency to saturation. The pyroelectric coefficient of these samples poled above 70 °C were constantly 9 nc/cm2 K, which is significantly larger than that of any other polymers.
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77.70.+a Pyroelectric and electrocaloric effects
77.80.B- Phase transitions and Curie point

The pulsating elastic sphere

D. Hazony

Appl. Phys. Lett. 39, 774 (1981); http://dx.doi.org/10.1063/1.92850 (1 page)

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The elastic sphere is shown to develop catastrophic pressures at its center in response to a finite square pulse input. Also shown is an unusual driving point input admittance function.
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47.10.-g General theory in fluid dynamics

Variable axis lens for electron beams

H. C. Pfeiffer, G. O. Langner, and M. Sturans

Appl. Phys. Lett. 39, 775 (1981); http://dx.doi.org/10.1063/1.92851 (2 pages) | Cited 3 times

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An electron optical focusing and deflection system for electron beam lithography has been developed which eliminates off‐axis aberrations up to the third order including transverse chromatic errors by means of a variable axis lens (VAL). Feasibility of the VAL concept has been established experimentally.
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41.75.Fr Electron and positron beams
07.77.-n Atomic, molecular, and charged-particle sources and detectors
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Erratum: Control of melt‐front velocity during pulsed laser annealing

R. F. Wood and G. E. Giles

Appl. Phys. Lett. 39, 777 (1981); http://dx.doi.org/10.1063/1.92891 (1 page)

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Abstract Unavailable
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Fq Growth from melts; zone melting and refining
99.10.Cd Errata
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