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1 Jan 1982

Volume 40, Issue 1, pp. 1-96

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A wavelength scannable XeCl oscillator—ring amplifier laser system

Thomas J. Pacala, I. Stuart McDermid, and James B. Laudenslager

Appl. Phys. Lett. 40, 1 (1982); http://dx.doi.org/10.1063/1.92918 (3 pages) | Cited 14 times

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A holographic grating at grazing angle of incidence was used to achieve tunable, narrow bandwidth (0.005 nm) operation of a XeCl oscillator for injection locking of a ring amplifier. The amplifier’s narrow bandwidth output energy was constant and equal to the untuned, broadband output (∼15 mJ) in regions where injection locking was achieved. Scanning was provided by use of a stepping motor‐driven differential micrometer on the tuning mirror. This system was used to produce a laser excitation spectrum of hydroxyl radicals (OH) in a flame.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Dj Gratings

Electrowetting optical switch

J. L. Jackel, S. Hackwood, and G. Beni

Appl. Phys. Lett. 40, 4 (1982); http://dx.doi.org/10.1063/1.92920 (2 pages) | Cited 20 times

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Continuous electrowetting (CEW) and refractive index matching have been used as the physical basis of an optical switch for multimode fibers. This switch has low cross talk (∼−30 dB), fast response times (∼20 ms), low operating voltage (∼1 V), and low power consumption (∼1 μW).
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42.81.-i Fiber optics
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters

High‐frequency electro‐optic oscillator using an integrated interferometer

A. Neyer and E. Voges

Appl. Phys. Lett. 40, 6 (1982); http://dx.doi.org/10.1063/1.92929 (3 pages) | Cited 13 times

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A hybrid electro‐optic oscillator is built up with an integrated Mach–Zehnder interferometer on LiNbO3 and an electrical feedback circuit. Oscillation frequencies up to 1.54 GHz are achieved due to the high‐frequency properties of the modulator. Oscillator operation as well as the synchronization behavior are analyzed by the describing function technique.
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42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Hp Optical processors, correlators, and modulators

Optical recording in hydrogenated semiconductors

M. A. Bösch

Appl. Phys. Lett. 40, 8 (1982); http://dx.doi.org/10.1063/1.92900 (3 pages) | Cited 15 times

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Optical information recording and storage is investigated in hydrogenated amorphous semiconductor films. The recording mechanisms are based on the evolution of hydrogen within the active layer. Three different processes are observed: (1) bulge (or bubble) formation, (2) spongelike microswelling, and (3) ablation without melting.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.70.Gi Light-sensitive materials
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Characterization of LiNbO3 waveguides exchanged in TlNO3 solution

Yi‐Xin Chen, William S. C. Chang, S. S. Lau, L. Wielunski, and Robert L. Holman

Appl. Phys. Lett. 40, 10 (1982); http://dx.doi.org/10.1063/1.92915 (3 pages) | Cited 10 times

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Characteristics of our waveguides are very different than those reported earlier by Jackel. We shall show that the waveguiding is produced by a loss of Li atoms rather than a significant indiffusion of Tl.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.70.-a Optical materials

Ten‐atmospheres high repetition rate rf‐excited CO2 waveguide laser

S. Løvold and G. Wang

Appl. Phys. Lett. 40, 13 (1982); http://dx.doi.org/10.1063/1.92916 (3 pages) | Cited 7 times

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The design and operating characteristics of a pulsed, rf‐excited CO2 waveguide laser operated at gas pressures up to 10 atm are reported. The results of small signal gain and gain decay time‐constant measurements are also given.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Lattice defect structure of degraded InGaAsP‐InP double‐heterostructure lasers

K. Ishida, T. Kamejima, Y. Matsumoto, and K. Endo

Appl. Phys. Lett. 40, 16 (1982); http://dx.doi.org/10.1063/1.92917 (2 pages) | Cited 17 times

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Lattice defect structure of degraded InGaAsP lasers has been investigated by scanning and transmission electron microscopy. It is found that although dislocation climb motion in InGaAsP lasers is slow, slip dislocations parallel to the stripe cause rapid degradation of the lasers.
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42.55.Px Semiconductor lasers; laser diodes
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
85.60.Jb Light-emitting devices

Short‐wavelength continuous 300‐K photopumped AlxGa1−xAs‐GaAs quantum well heterostructure laser (λ≳7270 Å)

H. Morkoç, T. J. Drummond, M. D. Camras, and N. Holonyak

Appl. Phys. Lett. 40, 18 (1982); http://dx.doi.org/10.1063/1.92903 (2 pages) | Cited 7 times

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Data are presented demonstrating room‐temperature continuous (cw 300 K) photopumped laser operation of AlxGa1−xAs‐GaAs (x∼0.4) quantum well heterostructures (QWH) at wavelengths as short as λ∼7270 Å, or hω−Eg (GaAs)∼280 meV. Photoexcitation levels on these six‐well Lz ∼28 Å QWH’s have been as low as 5.6×103 W/cm2 or Jeq ∼2.3×103 A/cm2, which is in a practical range for cw 300‐K diodes.
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42.55.Px Semiconductor lasers; laser diodes
78.40.Fy Semiconductors
78.45.+h Stimulated emission
71.23.An Theories and models; localized states

Pulsed chemical laser with variable pulse‐length electron‐beam initiation and magnetic confinement

S. T. Amimoto, J. S. Whittier, M. L. Lundquist, F. G. Ronkowski, R. Hofland, and P. J. Ortwerth

Appl. Phys. Lett. 40, 20 (1982); http://dx.doi.org/10.1063/1.92919 (3 pages) | Cited 6 times

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Performance of a pulsed HF/DF chain laser was investigated for the case of transverse initiation by a magnetically confined electron beam. Laser energy and beam quality are presented as functions of electron gun, magnetic field, gas mixture, and optical resonator parameters. The results include 79‐J/l HF output and electrical efficiency for conversion of total incident e‐beam energy to laser output energy of 45%.
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42.55.Ks Chemical lasers

New display based on electrically induced index‐matching in an inhomogeneous medium

H. G. Craighead, Julian Cheng, and S. Hackwood

Appl. Phys. Lett. 40, 22 (1982); http://dx.doi.org/10.1063/1.92904 (3 pages) | Cited 85 times

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The operation of a new light modulation device that employs electric field controlled light scattering in an inhomogeneous medium is described. The orientation of a nematic liquid crystal, contained in micrometer sized inclusions in a nonabsorbing solid, is changed to produce a varying refractive index. When the refractive index of the liquid crystal matches that of the solid, the composite medium is nonscattering and transparent. If the refractive indices do not match, the medium is scattering and opaque. High contrast ratios have been measured for transmitted light with a response time of a ∼1 ms. The application of this technique to passive display devices is discussed.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
85.60.Pg Display systems
61.30.-v Liquid crystals
78.20.Jq Electro-optical effects

Imaging performance of a normal incidence soft x‐ray telescope

J. Patrick Henry, Eberhard Spiller, and Martin Weisskopf

Appl. Phys. Lett. 40, 25 (1982); http://dx.doi.org/10.1063/1.92905 (3 pages) | Cited 14 times

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We have made the first measurements of the imaging performance of a normal incidence soft x‐ray telescope at BKα (0.183 keV, 67.6 Å). The performance is quite good; at 1.5° off axis the resolution is about 1 arcsec full width at half‐maximum and 50% of the reflected power within 512 arcsec is contained within a diameter of 5 arcsec.
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78.70.Ck X-ray scattering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.15.Eq Optical system design
42.87.-d Optical testing techniques
07.87.+v Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.)

A variable surface acoustic wave delay line utilizing a voltage controlled air gap

Hiroshi Takeuchi

Appl. Phys. Lett. 40, 28 (1982); http://dx.doi.org/10.1063/1.92906 (3 pages) | Cited 1 time

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A surface acoustic wave (SAW) delay line is demonstrated which is variable and employs interaction between the SAW on a piezoelectric substrate and an adjacent electrically conductive film. With this structure, a tunability of 2.7×10−3 has been achieved by electrically controlling an air gap between a gold film and a (YZ)LiNbO3 substrate. Improvements in the air‐gap fabrication techniques could increase the tunability up to ∼10−2.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects
62.30.+d Mechanical and elastic waves; vibrations
62.65.+k Acoustical properties of solids

Optical generation of continuous 76‐MHz surface acoustic waves on YZ LiNbO3

G. Veith and M. Kowatsch

Appl. Phys. Lett. 40, 30 (1982); http://dx.doi.org/10.1063/1.92907 (3 pages) | Cited 7 times

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The efficient generation of continuous surface acoustic waves (SAW) by focusing the radiation of a synchronously pumped mode‐locked cw dye laser (mode‐locking frequency 76.44 MHz) on the surface of a YZ LiNbO3 crystal is reported. The surface acoustic waves were generated on a small absorbing surface area under varying excitation conditions and detected piezoelectrically by means of a narrowband interdigital SAW transducer, which yielded a voltage responsivity of 1.5 μV/mW cw laser power. The detected electrical signal verified the expected square law dependence of the acoustic power on the incident laser power.
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43.35.Pt Surface waves in solids and liquids
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Evaluation of the gas puff z pinch as an x‐ray lithography and microscopy source

J. Bailey, Y. Ettinger, A. Fisher, and R. Feder

Appl. Phys. Lett. 40, 33 (1982); http://dx.doi.org/10.1063/1.92908 (3 pages) | Cited 31 times

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Soft x rays (100–10 000 eV), due to their short wavelength (0.1–10 nm) can play an important role in high resolution microscopy and lithography. The gas puff Z pinch is an intense source of soft x rays. Calorimeter and x ray diode measurements showed that 10% of the stored electrical energy was converted to radiation in the range of 1–10 nm. Commercial photoresist polymethyl methacrylate (PMMA) and some new resists—CR 39, nitrocellulose, were exposed to the pinch radiation. The developed images on the resists have been studied with a scanning electron microscope. The resolution was found to be source limited, but a simple modification can improve the resolution by more than an order of magnitude.
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85.60.Jb Light-emitting devices
52.55.Ez Theta pinch
07.85.-m X- and γ-ray instruments

Electric discharge effects on a XeCl pumped S2 heat‐pipe laser

K. Killeen, K. Greenberg, and J. T. Verdeyen

Appl. Phys. Lett. 40, 36 (1982); http://dx.doi.org/10.1063/1.92909 (2 pages) | Cited 9 times

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It is shown that an electrical discharge can dissociate the higher‐order sulfur molecules S3→8 into dimers S2 and thus create the proper environment for efficient conversion of XeCl radiation at 308 nm to the blue‐green. The use of a heat‐pipe configuration greatly alleviates the technological problems.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
33.80.Be Level crossing and optical pumping
33.20.Kf Visible spectra

Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams

Appl. Phys. Lett. 40, 38 (1982); http://dx.doi.org/10.1063/1.92910 (3 pages) | Cited 116 times

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The first superlattice avalanche photodiode (APD) is reported. The high field region of this p‐i‐n structure consists of 50 alternating Al0.45Ga0.55As (550 Å) and GaAs (450 Å) layers. A large ionization rate ratio has been measured in the field range (2.1–2.7)×105 V/cm, with α/β≃10 at a gain of 10 giving a McIntyre noise factor Fn = 3. The ionization rate ratio enhancement with respect to bulk GaAs and AlGaAs is attributed to the large difference in the band edge discontinuities for electrons and holes at the heterojunction interfaces. The superlattice APD is a new device concept which can be used to develop low noise APD’s in a variety of III‐V materials including long wavelength 1.3–1.6‐μm semiconductors.
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79.20.Hx Electron impact: secondary emission

Laser‐induced diffusion of oxygen in ZnTe

H. Tews, M. Schneider, and C. An

Appl. Phys. Lett. 40, 41 (1982); http://dx.doi.org/10.1063/1.92911 (3 pages) | Cited 6 times

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Micro‐ and millisecond laser annealing of ZnTe monocrystals in a controlled atmosphere shows clearly that oxygen diffuses from an oxygen‐rich atmosphere into ZnTe. In the photoluminescence spectra, the typical red oxygen band is observed after annealing. At 2.360 eV, the intense luminescence line from an exciton bound to a Frenkel pair (VZn,Znint) is found.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors

Mechanism of open‐circuit voltage enhancement in metal‐insulator‐semiconductor GaAs solar cells

A. K. Srivastava, S. Guha, and B. M. Arora

Appl. Phys. Lett. 40, 43 (1982); http://dx.doi.org/10.1063/1.92912 (3 pages) | Cited 8 times

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Mechanism of open‐circuit voltage enhancement in Au thin oxide‐n‐GaAs (111) solar cells prepared by room‐temperature wet oxidation has been studied. In contrast to earlier published results on (100) GaAs, barrier heights for metal‐insulator‐semiconductor and metal‐semiconductor cells are found to be the same, indicating absence of charge in the oxide or significant modification of surface states. It is shown that the increase in open‐circuit voltage is mainly caused by suppression of the majority‐carrier current due to tunneling through the oxide.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Ty Semiconductor-insulator-semiconductor structures

Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs

D. E. Holmes, R. T. Chen, K. R. Elliott, and C. G. Kirkpatrick

Appl. Phys. Lett. 40, 46 (1982); http://dx.doi.org/10.1063/1.92913 (3 pages) | Cited 170 times

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We show that the electrical compensation of undoped GaAs grown by the liquid encapsulated Czochralski technique is controlled by the melt stoichiometry. The concentration of the deep donor EL2 in the crystal depends on the As concentration in the melt, increasing from about 5×1015 cm−3 to 1.7×1016 cm−3 as the As atom fraction increases from 0.48 to 0.51. Furthermore, we show that the free‐carrier concentration of semi‐insulating GaAs is determined by the relative concentrations of EL2 and carbon acceptors. As a result, semi‐insulating material can be obtained only above a critical As concentration (0.475‐atom fraction in our material) where the concentration of EL2 is sufficient to compensate residual acceptors. Below the critical As concentration the material is p type due to excess acceptors.
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72.80.Ey III-V and II-VI semiconductors
81.10.Fq Growth from melts; zone melting and refining
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Physical basis of scattering potential at grain boundary of polycrystalline semiconductors

C. M. Wu and E. S. Yang

Appl. Phys. Lett. 40, 49 (1982); http://dx.doi.org/10.1063/1.92914 (3 pages) | Cited 9 times

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A physical theory using a charge scattering model is proposed to interpret the experimental data of grain boundary transport in polycrystalline semiconductors. The calculated result explains the need of an attenuation factor as an added coefficient in the thermionic emission current.
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72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Schottky solar cells on thin polycrystalline Zn3P2 films

M. Bhushan

Appl. Phys. Lett. 40, 51 (1982); http://dx.doi.org/10.1063/1.92921 (3 pages) | Cited 24 times

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Thin, polycrystalline films of p‐type Zn3P2 were grown by close‐spaced vapor transport on mica substrates coated with films of Fe and Si. Schottky solar cells were prepared by sputter depositing a thin, transparent film of Mg on Zn3P2. A total area conversion efficiency of 4.3% was achieved on 1‐cm2 area cell, under simulated AM1 illumination. The short‐circuit current and open‐circuit voltage were comparable to similar devices on single‐crystal Zn3P2. The barrier height was found to be ∼1.3 eV, higher than for Mg/Zn3P2 contacts reported earlier.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Conductivity enhancement in laser‐recrystallized polycrystalline silicon‐on‐insulator using molecular hydrogen annealing

H. W. Lam

Appl. Phys. Lett. 40, 54 (1982); http://dx.doi.org/10.1063/1.92922 (2 pages) | Cited 2 times

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It is found experimentally that a thermal anneal in molecular hydrogen at 450 °C reduces the sheet resistance of a laser‐recrystallized polycrystalline silicon layer supported by a silicon dioxide layer. This effect can be reversed by annealing the polycrystalline silicon in nitrogen. The observed electrical characteristics of the polycrystalline silicon are similar to those treated with an atomic hydrogen plasma where grain‐boundary potential barrier lowering is believed to be responsible for the reduction in the resistivity.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.Mm Grain and twin boundaries
81.10.Fq Growth from melts; zone melting and refining

Photoluminescence of pure GaAs crystals cleaved in ultrahigh vacuum

B. Fischer and H. J. Stolz

Appl. Phys. Lett. 40, 56 (1982); http://dx.doi.org/10.1063/1.92923 (3 pages) | Cited 12 times

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Photoluminescence measurements of pure GaAs crystals cleaved in ultrahigh vacuum (UHV) are compared to those of air‐cleaved reference samples. Nonradiative surface recombination and band bending are considerably reduced at the UHV‐cleaved surface. We find at low temperature (∼20 K) roughly the same spectral shape and the same integrated intensity for the UHV‐ and air‐cleaved surfaces provided we apply a factor of 10 lower excitation power density to the UHV‐cleaved surface. This factor of 10 stays constant over more than five orders of magnitude of excitation density. A detailed comparison of the spectra shows that the characteristic reabsorption minimum in the free‐exciton polariton luminescence is missing in the case of the UHV‐cleaved surface.
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78.40.Fy Semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Photoluminescence of pulsed laser irradiated n‐ and p‐GaAs

Bernard J. Feldman and Douglas H. Lowndes

Appl. Phys. Lett. 40, 59 (1982); http://dx.doi.org/10.1063/1.92924 (3 pages) | Cited 4 times

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We report a photoluminescence study of pulsed ruby laser irradiated crystalline and ion implanted GaAs, which supports the following conclusions: (1) pulsed laser irradiation of crystalline GaAs alters both the intensity and the spectrum of photoluminescence, corresponding to an increase in nonradiative recombination centers present in the material; (2) the variation of luminescent intensity with laser energy density is different for n‐ and p‐type materials; (3) no luminescence is detected in high dose ion implanted GaAs, either before or after laser annealing.
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78.40.Fy Semiconductors
79.20.Ds Laser-beam impact phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Self‐annealed ion implanted n+‐p diodes

G. Cembali, M. Finetti, P. G. Merli, and F. Zignani

Appl. Phys. Lett. 40, 62 (1982); http://dx.doi.org/10.1063/1.92925 (3 pages) | Cited 15 times

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Self‐annealing implantation with dopant ions has been successfully applied to the creation of n+‐p silicon diodes. Experimental conditions as well as current voltage characteristics of self‐annealed implanted diodes and thermally annealed diodes used as controls are presented.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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