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15 May 1982

Volume 40, Issue 10, pp. 861-916


Tunable electro‐optic waveguide TE〈–〉TM converter/wavelength filter

R. C. Alferness and L. L. Buhl

Appl. Phys. Lett. 40, 861 (1982); http://dx.doi.org/10.1063/1.92943 (2 pages) | Cited 6 times

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We report the first demonstation of electrical tuning of the center wavelength of waveguide electro‐optic TE〈–〉TM converter/filters. Using a novel dual electrode configuration the filter center wavelength is shifted by one filter bandwidth by application of a 10‐V tuning voltage.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

Amplifying continuous wave phase conjugate mirror with strontium barium niobate

Baruch Fischer, Mark Cronin‐Golomb, Jeffrey O. White, Amnon Yariv, and Ratnakar Neurgaonkar

Appl. Phys. Lett. 40, 863 (1982); http://dx.doi.org/10.1063/1.92944 (3 pages) | Cited 22 times

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We report the use of Sr1−x Bax Nb2O6 as an efficient holographic four‐wave mixing medium. We have used this material in a continuous wave phase conjugate mirror with reflectivity exceeding unity, and in a phase conjugate resonator.
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42.65.-k Nonlinear optics
42.70.-a Optical materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.40.-i Holography

Output power and temperature dependence of the linewidth of single‐ frequency cw (GaAl)As diode lasers

D. Welford and A. Mooradian

Appl. Phys. Lett. 40, 865 (1982); http://dx.doi.org/10.1063/1.92945 (3 pages) | Cited 38 times

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See Also: Erratum

Show Abstract
We report here the observation of a linear dependence of cw single‐frequency (GaAl)As diode laser linewidth as a function of reciprocal output power at 77, 195, and 273 K. The observed data are explained in terms of spontaneous emission events and their related refractive index perturbations.
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42.55.Ah General laser theory
42.55.Px Semiconductor lasers; laser diodes

The B→X transition in 200Hg 79Br

Joel Tellinghuisen and J. Gail Ashmore

Appl. Phys. Lett. 40, 867 (1982); http://dx.doi.org/10.1063/1.92946 (3 pages) | Cited 28 times

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The B→X spectrum of HgBr is photographed and analyzed for the single isotopic species 200Hg 79Br. The analysis confirms Wieland’s earlier analysis [Z. Elektrochem. 64, 761 (1960)] up to v″≃23 but is different for higher v″ levels, leading to a lower estimate of the ground‐state dissociation energy, De = 5500 cm−1. Franck–Condon calculations indicate that R′e−R″e = 0.57 A, which is somewhat greater than concluded in earlier work. The previously reported HgBr laser lines appear not to coincide with specific band heads in the spectrum; instead they probably involve a semicontinuous overlap of rotational lines in several v′‐v″ bands of the 12 isotopic HgBr molecules of significance in ’’natural’’ HgBr.
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33.20.Kf Visible spectra
33.20.Tp Vibrational analysis
33.70.-w Intensities and shapes of molecular spectral lines and bands
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Optically pumped ring laser oscillation in the 6Li2 molecule

A. Rajaei‐Rizi, John T. Bahns, K. K. Verma, and W. C. Stwalley

Appl. Phys. Lett. 40, 869 (1982); http://dx.doi.org/10.1063/1.92947 (3 pages) | Cited 4 times

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Stable unidirectional ring laser oscillation of optically pumped 6Li2 molecules was obtained for the first time. We observed transitions in the range 5237–5889 Å excited by different argon ion laser lines in the range 4579–4965 Å. Using our laser‐induced fluorescence results for this molecule, we have assigned unambiguously 23 of 27 lines to specific rovibronic transitions in the B1Πu→X1Σ+g band system of 6Li2. The optimum pressure for operation of the optically pumped 6Li2 laser was found to be ∼4 Torr.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

1/f frequency fluctuations of a quartz oscillator

Yasuaki Noguchi, Yasuaki Teramachi, and Toshimitsu Musha

Appl. Phys. Lett. 40, 872 (1982); http://dx.doi.org/10.1063/1.92948 (2 pages) | Cited 1 time

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Power spectral densities of frequency fluctuation of 5‐MHz, 5th‐overtone, plano‐convex IT‐cut quartz oscillators were evaluated for various fluctuation levels of environmental temperature. The spectrum is a superposition of two components of different origins: one depends on the temperature fluctuation level and the other does not. The temperature‐independent spectrum is inversely proportional to the Fourier frequency.
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43.58.Hp Tuning forks, frequency standards; frequency measuring and recording instruments; time standards and chronographs
84.30.Ng Oscillators, pulse generators, and function generators

Detailed characteristics of an intense proton beam from an ‘‘applied‐Bϑ’’ magnetically insulated ion diode

K. W. Zieher, D. A. Hammer, R. Pal, and T. Renk

Appl. Phys. Lett. 40, 874 (1982); http://dx.doi.org/10.1063/1.92949 (3 pages) | Cited 5 times

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Detailed structure and statistical divergence have been measured on the intense pulsed proton beam (300 keV, 80 ns, 5–10 kA) produced by an applied‐Bϑ magnetically insulated ion diode. A statistical divergence of the beam of about ±2° azimuthally and ±2° to ±4° radially was obtained. Beam image patterns show an intensity modulation of the proton beam in the azimuthal direction corresponding to a period 0.5–1 mm on the anode surface in addition to a regular 6‐mm modulation caused by structure built into the anode.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition

Y. Guldner, J. P. Vieren, P. Voisin, M. Voos, M. Razeghi, and M. A. Poisson

Appl. Phys. Lett. 40, 877 (1982); http://dx.doi.org/10.1063/1.92932 (3 pages) | Cited 56 times

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We report, from Shubnikov‐de Haas and cyclotron resonance experiments, the first observation of a two‐dimensional, high‐mobility electron gas in a selectively doped In0.53Ga0.47 As‐InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.
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78.20.-e Optical properties of bulk materials and thin films
75.20.Ck Nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
76.40.+b Diamagnetic and cyclotron resonances

Influence of AlxGa1−xAs buffer layers on the performance of modulation‐doped field‐effect transistors

T. J. Drummond, W. Kopp, R. E. Thorne, R. Fischer, and H. Morkoç

Appl. Phys. Lett. 40, 879 (1982); http://dx.doi.org/10.1063/1.92933 (3 pages) | Cited 7 times

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Normally‐off and pseudo‐normally‐on modulation‐doped Al0.3Ga0.7As/GaAs Schottky barrier field‐effect transistors were fabricated and characterized. The structures were grown by molecular beam epitaxy and exhibited electron mobilities as high as 8000, 100 000, and 200 000 cm2/Vs at 300, 78, and 10 K, respectively. Inclusion of an Al0.3Ga0.7As buffer layer between the substrate and the modulation‐doped layers improved the transconductance and saturation characteristics substantially. This improvement was observed to be strongly dependent on the substrate temperature during the buffer layer growth, with the best results being obtained at 700 °C.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors

Deuterium passivation of grain‐boundary dangling bonds in silicon thin films

N. M. Johnson, D. K. Biegelsen, and M. D. Moyer

Appl. Phys. Lett. 40, 882 (1982); http://dx.doi.org/10.1063/1.92934 (3 pages) | Cited 118 times

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Hydrogen passivation of silicon grain boundaries has been investigated by using deuterium as a readily identifiable isotope which duplicates hydrogen chemistry. Deuterium detection with high sensitivity was achieved with secondary‐ion mass spectrometry. Diffusion of deuterium in single‐ crystal silicon and polycrystalline silicon thin films at low temperatures (e.g., 350 °C) clearly demonstrates enhanced diffusion along grain boundaries. Defects at grain boundaries were detected by electron‐spin resonance and identified as silicon‐dangling bonds. Deuterium passivation of grain boundaries is revealed by correlated deuterium diffusion and dangling‐bond annihilation in polycrystalline silicon films.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Interface recombination and carrier confinement at a GaAs/GaxIn1−xP double heterojunction studied by picosecond population modulation spectroscopy

J. H. Harris, S. Sugai, and A. V. Nurmikko

Appl. Phys. Lett. 40, 885 (1982); http://dx.doi.org/10.1063/1.92935 (3 pages) | Cited 10 times

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Sensitive picosecond excite‐probe modulation methods have been applied to study electron‐hole confinement and interface lifetime in a molecular beam epitaxy (MBE) grown n‐type GaxIn1−xP/ GaAs/GaxIn1−xP double heterojunction. Time‐varying transmission spectra at 77 K have been examined near the E0+Δ0 transition in GaAs and near the fundamental edge in GaxIn1−xP (x = 0.47), following the injection of a small electron‐hole population. We demonstrate directly the confining efficiency of the structure for electrons and, consistent with other recent evidence, find that the interface recombination velocity in the relatively strain‐free heterostructure is reduced to less than 1×104 cm/s from the value of 5×105 cm/s for a free GaAs surface. The latter has been determined by us directly from time‐resolved reflection spectra which suggest further applications of these methods to surface spectroscopy of semiconductors.
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42.55.Px Semiconductor lasers; laser diodes

Epitaxy of CuI on Cu(111)

S. B. DiCenzo, G. K. Wertheim, and D. N. E. Buchanan

Appl. Phys. Lett. 40, 888 (1982); http://dx.doi.org/10.1063/1.92936 (3 pages) | Cited 7 times

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Thin epitaxial films of CuI have been grown on clean Cu(111) surfaces by chemical reaction with iodine vapor. A lattice match is obtained because the iodine (111) planes of CuI have the same symmetry and approximately the same spacing as the (√3×√3)R30° iodine adsorbate layer which forms initially on exposure of clean Cu(111) to iodine vapor. This suggests that pairs of materials favorable for heteroepitaxy can consequently be identified by searching for agreement between submonolayer adsorbate structures and atom planes in solids.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.60.Jv Interfaces; heterostructures; nanostructures
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Damage and lattice location studies of Si‐implanted GaAs

R. S. Bhattacharya and P. P. Pronko

Appl. Phys. Lett. 40, 890 (1982); http://dx.doi.org/10.1063/1.92937 (3 pages) | Cited 8 times

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High‐resolution Rutherford backscattering and proton‐induced x‐ray emission with channeling have been used to evaluate damage and lattice site location of Si‐implanted GaAs. Semi‐insulating Cr‐doped GaAs (100) crystals were implanted at room temperature with 120‐keV Si ions to a dose of 5×1015 cm−2. The residual damage and the locations in the lattice, which the implant occupies, are determined after annealing the samples at 950 °C for 15 min. It is shown that 70±7% of the implanted Si occupies substitutional lattice sites.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Tangential magnetoresistance of two‐dimensional electron gas at a selectively doped n‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy

H. Ohno and H. Sakaki

Appl. Phys. Lett. 40, 893 (1982); http://dx.doi.org/10.1063/1.92938 (3 pages) | Cited 3 times

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Magnetoresistance effect in a two‐dimensional electron gas with high electron mobility (as high as 78 000 cm2/Vs at 77 K) at an n‐GaAlAs/GaAs interface is reported for the magnetic field By, parallel to the interface. This tangential magnetoresistance is shown for the first time to contain a term having a linear dependence both on By and on electric field parallel to the current Ex, and is interpreted in terms of the scattering probability change due to the electron wave function deformation by Lorenz force. The polarity change of the linear term is shown to be the evidence for the one‐sided distribution of ionized impurities.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

Raman measurements of stress in silicon‐on‐sapphire device structures

S. R. J. Brueck, B‐Y. Tsaur, John C. C. Fan, D. V. Murphy, T. F. Deutsch, and D. J. Silversmith

Appl. Phys. Lett. 40, 895 (1982); http://dx.doi.org/10.1063/1.92939 (4 pages) | Cited 33 times

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Spatially resolved (∼1 μm) Raman scattering measurements of the Si optical phonon spectrum have been used to map the stress in silicon‐on‐sapphire device structures. Devices defined by an isolated island etch technique exhibit a stress relaxation extending about 1.5 μm from the edges of a 6‐μm‐wide Si stripe. Devices defined by a local oxidation of the Si exhibit a more uniform stress profile.
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85.30.De Semiconductor-device characterization, design, and modeling
85.40.Bh Computer-aided design of microcircuits; layout and modeling
78.30.Hv Other nonmetallic inorganics

Infrared absorption of the 78‐meV acceptor in GaAs

K. R. Elliott, D. E. Holmes, R. T. Chen, and C. G. Kirkpatrick

Appl. Phys. Lett. 40, 898 (1982); http://dx.doi.org/10.1063/1.92940 (4 pages) | Cited 58 times

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We observe the infrared absorption spectra associated with a residual 78‐meV acceptor in undoped liquid encapsulated Czochralski GaAs. The acceptor appears to be associated with an intrinsic defect, most likely the antisite GaAs. This acceptor is the dominant level in material grown from heavily Ga‐rich melts. The concentration of the level depends strongly on melt stoichiometry increasing from about 3×1015 cm−3 to 3×1016 cm−3 as the As atom fraction changes from 0.47 to 0.43.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra

A novel p+nn+ GaAs/Al0.30Ga0.70As/GaAs double heterojunction diode for high‐temperature electronic applications

T. E. Zipperian, L. R. Dawson, and C. E. Barnes

Appl. Phys. Lett. 40, 901 (1982); http://dx.doi.org/10.1063/1.92941 (4 pages) | Cited 1 time

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Mesa‐isolated, p+nn+, GaAs/Al0.30Ga0.70 As/GaAs, double heterojunction diodes are reported which have excellent electrical characteristics over the full temperature range from 23 to 400 °C. These devices have diode law ideality factors of approximately 1.1 at any temperature for forward current densities greater than 10−3 A/cm2 and have reverse leakage current densities of 4×10−10 A/cm2 at 23 °C and 2×10−2 A/cm2 at 400 °C. AlxGa1−x As is used only in critical device regions to ensure that GaAs heterojunction contacts are made to the wider band‐gap materials and to allow the chemically reactive AlxGa1−x As to be encapsulated by GaAs. These results demonstrate that the GaAs/AlxGa1−x As chemical system is a good materials candidate in which to base a technology for electronic components operated at high temperatures.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors

Disorder of an AlAs‐GaAs superlattice by silicon implantation

J. J. Coleman, P. D. Dapkus, C. G. Kirkpatrick, M. D. Camras, and N. Holonyak

Appl. Phys. Lett. 40, 904 (1982); http://dx.doi.org/10.1063/1.92942 (3 pages) | Cited 111 times

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Data are presented on a 126‐layer AlAs‐GaAs superlattice which has been selectively disordered by silicon implantation. Silicon ions, implanted at 375 keV and a dose of 1014 cm−2, yield a compositionally disordered region 0.33 μm thick centered 0.7 μm below the superlattice surface. The implanted region demonstrates reduced photoluminescence intensity relative to the unimplanted regions of the superlattice. The amphoteric nature of silicon and defect‐induced vacancies account for the range and extent of disordering observed in the superlattice.
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61.72.U- Doping and impurity implantation
66.30.Ny Chemical interdiffusion; diffusion barriers
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Experimental study of a superconducting vortex‐memory device

J. Parisi, R. P. Huebener, and B. Mühlemeier

Appl. Phys. Lett. 40, 907 (1982); http://dx.doi.org/10.1063/1.92950 (3 pages) | Cited 1 time

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A nondestructive readout random access memory based on the use of a two‐dimensional array of single‐quantum vortices in a thin‐film type‐II superconductor represents an interesting new storage medium for future Josephson computers. We have studied experimentally the operational mode of this memory device, using as a model system multiquanta flux tubes in a thin‐film type‐I superconductor (Pb) in combination with stroboscopic high‐resolution magneto‐optical flux detection. From our results estimates of the performance data of a single‐quantum vortex‐ memory device are derived.
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85.25.-j Superconducting devices
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Pyroelectric detection of magnetic resonance

R. L. Melcher and G. V. Arbach

Appl. Phys. Lett. 40, 910 (1982); http://dx.doi.org/10.1063/1.92951 (2 pages) | Cited 7 times

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Magnetic resonance absorption has been detected in paramagnetic and ferromagnetic materials using pyroelectric sensing of the temperature rise of the sample. In addition to being a valuable method for thermal detection of magnetic resonance, the technique provides a useful method for the measurement of the pyroelectric properties of materials.
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77.70.+a Pyroelectric and electrocaloric effects
76.90.+d Other topics in magnetic resonances and relaxations (restricted to new topics in section 76)
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Continuous electrowetting effect

G. Beni, S. Hackwood, and J. L. Jackel

Appl. Phys. Lett. 40, 912 (1982); http://dx.doi.org/10.1063/1.92952 (3 pages) | Cited 19 times

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We introduce a new electrowetting effect, continuous electrowetting (CEW), and show its advantages for applications to displays and other electro‐optic devices. We demonstrate experimentally, by using CEW, fast and reversible electrowetting flow on the theoretically predicted scale of ∼10 cm/s for ∼1‐V driving voltage.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
FREE

Erratum: Induced junction monolithic zinc oxide‐on‐silicon storage correlator [Appl. Phys. Lett. 40, 71 (1982)]

K. C.‐K. Weng, R. L. Gunshor, and R. F. Pierret

Appl. Phys. Lett. 40, 915 (1982); http://dx.doi.org/10.1063/1.93286 (1 page)

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Abstract Unavailable
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43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
99.10.Cd Errata
FREE

Erratum: High‐output power InGaAsP (λ = 1.3 μm) strip‐buried heterostructure lasers [Appl. Phys. Lett. 36, 358 (1980)]

R. J. Nelson, P. D. Wright, P. A. Barnes, R. L. Brown, T. Cella, and R. G. Sobers

Appl. Phys. Lett. 40, 915 (1982); http://dx.doi.org/10.1063/1.93287 (1 page)

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Abstract Unavailable
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Cg Contact resistance, contact potential
99.10.Cd Errata
FREE

Erratum: Deuterium in He‐implanted Fe: Trapping and the surface permeation barrier [Appl. Phys. Lett. 39, 450 (1981)]

S. M. Myers, F. Besenbacher, and J. Bøttiger

Appl. Phys. Lett. 40, 916 (1982); http://dx.doi.org/10.1063/1.93285 (1 page)

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Abstract Unavailable
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66.30.J- Diffusion of impurities
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
99.10.Cd Errata
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