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1 Jun 1982

Volume 40, Issue 11, pp. 921-1001

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Thermal regrowth of silicon(111) surface during ion bombardment

Ming L. Yu

Appl. Phys. Lett. 40, 986 (1982); http://dx.doi.org/10.1063/1.92977 (2 pages) | Cited 8 times

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The epitaxial regrowth of Si(111) surface damaged by low energy Ne+ bombardment was studied with low energy electron diffraction. The temperature for regrowth was consistently found to be lower when annealing was done during rather than after the ion bombardment. This is in line with the observation that crystalline Si films can be grown from the vapor at relatively low temperatures in a plasma or with ion beam processes.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology

High current post‐hydrogenated chemical vapor deposited amorphous silicon p‐i‐n diodes

N. Szydlo, E. Chartier, N. Proust, J. Magariño, and D. Kaplan

Appl. Phys. Lett. 40, 988 (1982); http://dx.doi.org/10.1063/1.92978 (3 pages) | Cited 6 times

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Amorphous silicon p‐i‐n diodes have been fabricated for the first time by chemical vapor deposition and post‐hydrogenation in a hydrogen plasma. By analyzing the current‐voltage characteristics we obtain current densities up to 50 A/cm2 and rectification ratios better than 107 for 3‐V applied bias. A characteristic reversible breakdown voltage is observed up to voltages of ∼20 V. These results are compared with those obtained on amorphous silicon p‐i‐n diodes prepared by glow discharge decomposition of SiH4.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Defect states in electron bombarded n‐InP

M. Levinson, J. L. Benton, H. Temkin, and L. C. Kimerling

Appl. Phys. Lett. 40, 990 (1982); http://dx.doi.org/10.1063/1.92953 (3 pages) | Cited 47 times

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A deep level transient spectroscopy study has been made of 1‐MeV electron bombarded liquid encapsulated Czochralski grown n‐InP Schottky barrier structures. Two previously unobserved shallow defect states were found at very low concentration levels in the unirradiated material, and irradiation resulted in seven new states in the upper‐half of the band gap. Introduction rates, electron activation energies, and capture cross sections were examined and a preliminary investigation of annealing behavior was performed. The irradiation induced states all exhibited relatively low introduction rates and large capture cross sections, and three gave evidence of significant defect mobility near room temperature.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Fe Electron and positron radiation effects

Deep center EL2 and anti‐Stokes luminescence in semi‐insulating GaAs

E. J. Johnson, J. Kafalas, R. W. Davies, and W. A. Dyes

Appl. Phys. Lett. 40, 993 (1982); http://dx.doi.org/10.1063/1.92954 (3 pages) | Cited 33 times

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We have observed efficient photoluminescence upconversion in semi‐insulating GaAs. This upconversion is apparently associated with a two‐step excitation of the deep level EL2 as indicated by the excitation spectrum. Assessment of these results along with results in the literature suggests that this center is due to an arsenic antisite defect. Line shape analysis indicates that clustering of acceptors occurs near the site of the defect. These results provide insight into the agents responsible for the semi‐insulating property of undoped GaAs.
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71.23.An Theories and models; localized states
78.55.Hx Other solid inorganic materials

Properties of the Mo‐CuInSe2 interface

P. E. Russell, O. Jamjoum, R. K. Ahrenkiel, L. L. Kazmerski, R. A. Mickelsen, and W. S. Chen

Appl. Phys. Lett. 40, 995 (1982); http://dx.doi.org/10.1063/1.92955 (3 pages) | Cited 15 times

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Mo has been suggested and used as an ohmic back contact for CdS/p‐CuInSe2 solar cells. The Mo‐ p‐CuInSe2 interface has been studied for both polycrystalline and single‐ crystal CuInSe2, using electron beam induced current and capacitance‐voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p‐CuInSe2.
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73.30.+y Surface double layers, Schottky barriers, and work functions
84.60.Jt Photoelectric conversion

Ultrarapid crystal growth and impurity segregation in amorphous silicon annealed with short Q‐switched laser pulses

A. G. Cullis, H. C. Webber, and N. G. Chew

Appl. Phys. Lett. 40, 998 (1982); http://dx.doi.org/10.1063/1.92956 (3 pages) | Cited 18 times

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Very short Q‐switched laser pulses have been used to produce especially high‐speed crystal growth in ion implanted, amorphous Si layers. This is shown to occur in an unstable, explosive manner which can give pronounced lateral modulation of layer structure. Novel phenomena relating to impurity segregation and cell formation in amorphous Si are also presented. These provide strong evidence that amorphous Si melts to form an undercooled, normal, low viscosity liquid and that the amorphous phase itself is not a glassy state.
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61.43.Fs Glasses
61.43.-j Disordered solids
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.10.Fq Growth from melts; zone melting and refining
FREE

Erratum: Electron tunneling in Si‐SiO2‐Al structures: A comparison between 〈100〉 oriented and 〈111〉 oriented Si [Appl. Phys. Lett. 39, 818 (1981)]

G. Krieger and R. M. Swanson

Appl. Phys. Lett. 40, 1001 (1982); http://dx.doi.org/10.1063/1.93288 (1 page)

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Abstract Unavailable
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
99.10.Cd Errata
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