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15 Jun 1982

Volume 40, Issue 12, pp. 1007-1046


A nematic liquid crystal storage display based on bistable boundary layer configurations

J. Cheng, R. N. Thurston, G. D. Boyd, and R. B. Meyer

Appl. Phys. Lett. 40, 1007 (1982); http://dx.doi.org/10.1063/1.92989 (3 pages) | Cited 22 times

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We describe a new twisted nematic liquid crystal display effect exhibiting bistable equilibrium states under an applied field. Each state is characterized by a boundary layer configuration whose properties provide for optical differentiation of the states. The basic principles, optics, and switching properties of this device are discussed.
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85.60.Pg Display systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
61.30.-v Liquid crystals

VHF/UHF frequency measurement using the surface acoustic wave delay difference device

Robert B. Ward

Appl. Phys. Lett. 40, 1010 (1982); http://dx.doi.org/10.1063/1.92990 (3 pages)

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A recently developed method for precise phase measurement of vhf/uhf signals has been used in frequency measurement system. Results are given from three test cases, two broadband (10 and 20 MHz) and one narrowband (300 kHz). In each case the frequency was measured with a precision which was a small fraction of the bandwidth and in the best case was 0.07% of the bandwidth. The configuration tested produced a reading every six milliseconds but a much higher rate is possible.
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06.30.Ft Time and frequency

A simplified approach to computations of photoacoustic signals in gas‐filled cells

P. K. Kuo and L. D. Favro

Appl. Phys. Lett. 40, 1012 (1982); http://dx.doi.org/10.1063/1.92991 (3 pages) | Cited 6 times

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A relationship is derived between photoacoustic signals from localized sources and temperature distributions from extended sources. The result is applied to simple geometries.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Noncontact optoacoustic determination of gas flow velocity and temperature simultaneously

W. Zapka and A. C. Tam

Appl. Phys. Lett. 40, 1015 (1982); http://dx.doi.org/10.1063/1.92992 (3 pages) | Cited 7 times

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We have developed a new noncontact optoacoustic method for simultaneous measurement of flow velocity and temperature in a flowing fluid to accuracies of 5 cm/s and 0.1 °C, respectively. It is applicable for pure particulate‐free gases and liquids. A pulsed ND‐doped yttrium aluminum garnet (YAG) laser of 40‐mJ energy and 10‐ns duration generates an acoustic pulse whose propagations in directions along and against the flow are monitored by a total of three cw probe beams. We also describe the minimization of errors due to a blast wave (which propagates faster than sound) being generated at the source.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

A novel analytical design method for discharge laser electrode profiles

E. A. Stappaerts

Appl. Phys. Lett. 40, 1018 (1982); http://dx.doi.org/10.1063/1.92993 (2 pages) | Cited 14 times

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An exact solution of the two‐dimensional free‐space Poisson equation for a discharge geometry is derived. It allows the calculation of electrode profiles starting from any assumed field distribution in the discharge midplane. Analytic expressions are obtained for a new class of profiles, and their properties are illustrated with the example of an XeCl laser discharge. The new profiles provide excellent field uniformity, and they are much more compact than other analytical profiles such as those of Rogowski and Chang.
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52.80.-s Electric discharges

Dislocation breakaway in photoplastic CdS

Vivian F. Mayer and James M. Galligan

Appl. Phys. Lett. 40, 1020 (1982); http://dx.doi.org/10.1063/1.92994 (2 pages) | Cited 8 times

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Dislocation breakaway has been observed in CdS during plastic deformation under illumination. The magnitude and frequency of such breakaways are found to be strongly temperature dependent in the range from 0 to 70 °C. This observation suggests a way to distinguish among several theories of photoplasticity.
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81.40.Lm Deformation, plasticity, and creep
78.40.Fy Semiconductors

Polarized infrared transmittance of carbon black‐polyvinylchloride composite

I. Balberg and P. J. Zanzucchi

Appl. Phys. Lett. 40, 1022 (1982); http://dx.doi.org/10.1063/1.92995 (2 pages) | Cited 4 times

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Resistivity measurement on carbon black‐polyvinylchloride (PVC) composites combined with Monte Carlo calculations on the percolation threshold of a two‐dimensional system of oriented sticks has suggested that the carbon black aggregates in these compression molded composites are oriented. Although electron microscopy failed to disclose structure in the composite, polarized infrared transmittance measurements do provide direct evidence for the orientation of carbon black aggregates. The degree of orientation from optical polarization correlates with orientation suggested by the resistivity measurements.
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81.05.Qk Reinforced polymers and polymer-based composites
78.30.-j Infrared and Raman spectra
72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72)

Photoquenching of electroluminescence in ZnS:TbF3 thin films

Hiroshi Kobayashi, Shosaku Tanaka, Hiroshi Sasakura, Kosaku Tsujita, and Roger Tueta

Appl. Phys. Lett. 40, 1024 (1982); http://dx.doi.org/10.1063/1.92996 (3 pages) | Cited 4 times

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The photoquenching effect of electroluminescence (EL) has been observed for the first time in thin‐film ZnS:TbF3 EL devices. The luminescent intensity and the conductive charge are quenched, when the device is exposed to a visible light of energy between 1.75–2.75 eV. The maximum photoquenching rate of 45% is observed at a voltage slightly higher than the EL threshold voltage. The recovering time from the photoquenching is of the order of several seconds. This photoquenching effect is likely to be due to deep hole traps.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Thermally stimulated currents from positively corona‐charged polypropylene films

Atsushi Baba and Kazuo Ikezaki

Appl. Phys. Lett. 40, 1027 (1982); http://dx.doi.org/10.1063/1.92997 (2 pages) | Cited 7 times

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Thermally stimulated currents from positively corona‐charged polypropylene films which were heat treated at various temperatures have been studied in the temperature range 20–165 °C. Three peaks are observed in the TSC spectra. Intensities of these peaks strongly depend on the thermal history of the sample films. A thermal effect of the TSC, which has been introduced during vacuum deposition of metallic electrodes on the sample films, is demonstrated. Observed results suggest that the electrical trap properties in polypropylene depend on the fine structure of the polymer.
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73.61.Ng Insulators
77.22.Ej Polarization and depolarization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Large optical cavity AlGaAs buried heterostructure window lasers

H. Blauvelt, S. Margalit, and A. Yariv

Appl. Phys. Lett. 40, 1029 (1982); http://dx.doi.org/10.1063/1.92984 (3 pages) | Cited 16 times

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Large optical cavity buried heterostructure window lasers in which only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors have been fabricated. These lasers have threshold currents and differential quantum efficiencies comparable to those of regular large optical cavity buried heterostructure lasers in which the active region extends to the laser mirrors, however the window lasers have been operated under pulsed conditions at three times the power at which otherwise identical lasers without windows degrade by catastrophic mirror damage.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Improvements on the electrical resistivity of chemical bath deposited CdS films by laser annealing

G. Martínez, J. L. Martínez, and A. Zehe

Appl. Phys. Lett. 40, 1031 (1982); http://dx.doi.org/10.1063/1.92985 (3 pages) | Cited 2 times

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The dark resistivity of cw Ar+ ion laser annealed chemical bath deposited CdS films has been measured. A two‐decade decrement of the electrical resistivity, as compared to the unannealed samples, is reported. A threshold laser power density for reproducible annealing has been found to be ≳50 W/cm2. Log ρ vs 1/T plots were used to calculate the mobility ratio b = μn/μp. This ratio shows a slight increment on laser annealed but it is not sufficient to explain the resistivity changes.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
79.20.Ds Laser-beam impact phenomena
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Spectroscopic identification of Si donors in GaAs

T. S. Low, G. E. Stillman, D. M. Collins, C. M. Wolfe, S. Tiwari, and L. F. Eastman

Appl. Phys. Lett. 40, 1034 (1982); http://dx.doi.org/10.1063/1.92986 (3 pages) | Cited 15 times

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Photothermal ionization measurements on Si‐doped GaAs grown by molecular beam epitaxy (MBE) have indicated that the previous identification of the Si donor peak was incorrect. Data leading to the new identification are presented and the results leading to the earlier identification are re‐examined. Implications of the new identification for the importance of Si as a residual donor in epitaxial GaAs grown by various techniques are discussed.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Interface morphology studies of (110) and (111) Ge‐GaAs grown by molecular beam epitaxy

Chin‐An Chang

Appl. Phys. Lett. 40, 1037 (1982); http://dx.doi.org/10.1063/1.92987 (3 pages) | Cited 10 times

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Interface morphologies of (110) and (111) Ge‐GaAs grown by molecular beam epitaxy (MBE) have been studied using reflection high energy electron diffraction (RHEED). For the (110) Ge‐ GaAs, planar growths of both GaAs on Ge and Ge on GaAs are observed. The (111) Ge‐GaAs, on the other hand, shows a rough growth of GaAs on Ge, and a planar one of Ge on GaAs, similar to those of (100) Ge‐GaAs. The (110) and (111) results are discussed in terms of the orientation effect on the MBE growth of compound semiconductors and are consistent with that on (100) Ge‐GaAs.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.J- Electron diffraction and scattering

Effect of heat treatment on residual stress and electron Hall mobility of laser annealed silicon‐on‐sapphire

Y. Kobayashi, M. Nakamura, and T. Suzuki

Appl. Phys. Lett. 40, 1040 (1982); http://dx.doi.org/10.1063/1.92988 (3 pages) | Cited 11 times

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The effect of heat treatment on electron Hall mobility and the residual stress of laser annealed silicon‐on‐sapphire (SOS) has been investigated using Hall effect measurements and laser Raman spectroscopy. The improvement in electron Hall mobility of SOS brought about by pulsed ruby‐laser annealing disappeared with subsequent heat treatment at temperatures higher than about 600°C. Raman spectroscopy measurements revealed that the residual stress in the silicon layer, regrown by the laser annealing, was tensile and that the observed decrease in electron Hall mobility was caused by stress changes from tension to compression which accompanied the heat treatment above about 600°C. These results showed that the SOS/metal‐oxide‐semiconductor field‐effect transistor (MOSFET) with improved channel mobility could be realized when it was fabricated from the silicon layer having tensile stress.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
78.30.Hv Other nonmetallic inorganics
81.40.Rs Electrical and magnetic properties related to treatment conditions

Seeded oscillatory growth of Si over SiO2 by cw laser irradiation

G. K. Celler, L. E. Trimble, K. K. Ng, H. J. Leamy, and H. Baumgart

Appl. Phys. Lett. 40, 1043 (1982); http://dx.doi.org/10.1063/1.92998 (3 pages) | Cited 16 times

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Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
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68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining
79.20.Ds Laser-beam impact phenomena
FREE

Erratum: A technique for rapidly alternating boron and arsenic doping in ion‐implanted silicon molecular beam epitaxy [Appl. Phys. Lett. 40, 239 (1982)]

R. G. Swartz, J. H. McFee, A. M. Voshchenkov, S. N. Finegan, and Y. Ota

Appl. Phys. Lett. 40, 1046 (1982); http://dx.doi.org/10.1063/1.93289 (1 page) | Cited 1 time

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Abstract Unavailable
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata
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