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1 Jan 1982

Volume 40, Issue 1, pp. 1-96

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Silicon molecular beam epitaxy on arsenic‐implanted and laser‐processed silicon

L. Smit, T. de Jong, D. Hoonhout, and F. W. Saris

Appl. Phys. Lett. 40, 64 (1982); http://dx.doi.org/10.1063/1.92926 (3 pages) | Cited 2 times

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We report on the production of doped silicon layers buried under epitaxial undoped silicon layers, giving particular attention to the abruptness of the doped‐undoped silicon interface. Arsenic‐implanted silicon is both annealed and atomically cleaned using pulsed laser irradiation. Surface cleanliness and surface order are checked with Auger electron spectroscopy and low energy electron diffraction respectively. Molecular beam epitaxy is done with a substrate temperature between 300 and 600 °C, resulting in an epitaxial silicon layer of typically 100 nm. Rutherford backscattering plus channeling show that the arsenic concentration drops abruptly at the substrate‐epitaxy interface and that the epitaxial layer is of good crystal quality.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation

Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si

Hiroshi Ishiwara and Tanemasa Asano

Appl. Phys. Lett. 40, 66 (1982); http://dx.doi.org/10.1063/1.92927 (3 pages) | Cited 78 times

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Epitaxial growth of CaF2 films onto Si(100) and (111) substrates and the growth of Si films onto the CaF2/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that the optimum growth temperatures at which the crystalline quality of the CaF2 films is excellent range from 600 to 800 °C for Si(111) substrates and from 500 to 600 °C for Si (100). It has also been found that a heteroepitaxial Si/CaF2/Si(111) structure is formed by vacuum deposition of Si onto the heated CaF2/Si(111) structure.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Deep levels in ion‐implanted Si after beam annealing

N. H. Sheng, M. Mizuta, and J. L. Merz

Appl. Phys. Lett. 40, 68 (1982); http://dx.doi.org/10.1063/1.92928 (4 pages) | Cited 11 times

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Deep level transient spectroscopy has been utilized to study the electronic defect levels in cw laser‐annealed and scanning electron‐beam‐annealed Si after ion implantation. For cw laser annealing, a dominant hole trap, whose concentration increases by more than one order of magnitude with increasing laser power, has been measured in slip‐free samples. In contrast, only a low concentration of hole traps appears in electron‐beam‐annealed Si. This laser‐induced defect is not stable at room temperature; it decays with time and can be restored by low‐temperature thermal annealing. For the furnace‐annealed control samples, rapid quenching from sufficiently high temperature into water produces the same defect energy level and annealing characteristic as the laser‐induced defect. These annealing characteristics of laser‐induced defects and thermally induced, quenched‐in defects are tentatively correlated with Fe and Fe‐B pair reactions in Si.
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79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
78.40.Fy Semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Induced junction monolithic zinc oxide‐on‐silicon storage correlator

K. C. ‐K. Weng, R. L. Gunshor, and R. F. Pierret

Appl. Phys. Lett. 40, 71 (1982); http://dx.doi.org/10.1063/1.92930 (3 pages) | Cited 1 time

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See Also: Erratum

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An induced junction array is proposed as an alternative to the conventional PN diode configuration in the implementation of reference storage in a surface acoustic wave SAW storage correlator. Induced junction devices fabricated in the ZnO‐on‐Si structure are found to exhibit performance characteristics comparable to those of PN diode correlators, while providing greater ease of fabrication.
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43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Evidence for a parallel path oxidation mechanism at the Si‐SiO2 interface

E. A. Irene

Appl. Phys. Lett. 40, 74 (1982); http://dx.doi.org/10.1063/1.92931 (2 pages) | Cited 13 times

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Some controversy exists as to whether the reaction of oxygen and Si at the Si‐SiO2 interface involves both atomic and molecular oxygen. From the direction of curvature of Arrhenius plots for the observed rate constants substantial support is obtained for the mechanism with two oxidant species. The direction of curvature was obtained from the second derivative of In kobs with respect to T−1. Parallel rate processes yield concave upwards Arrhenius plots while consecutive processes yield concave downwards plots.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.20.Pm Rate constants, reaction cross sections, and activation energies

Reduction of radiation induced soft error rates in devices utilizing localized state charge storage

D. D. Coon, G. E. Derkits, and P. F. Shepard

Appl. Phys. Lett. 40, 75 (1982); http://dx.doi.org/10.1063/1.92894 (3 pages) | Cited 1 time

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It is shown that for semiconductor memory devices utilizing charge storage in localized states it is possible to achieve a high degree of immunity to soft errors. This is accomplished by the application of an electric field which is strong enough to efficiently remove carriers produced by radiation from the region where charge is stored in localized states but not so strong as to remove readily by field ionization charge already stored in localized states. Tests of this concept have been performed using energetic Compton electrons produced by gamma rays.
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07.05.Bx Computer systems: hardware, operating systems, computer languages, and utilities
61.80.-x Physical radiation effects, radiation damage
85.30.-z Semiconductor devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Investigation of the oxidation properties of cw laser formed WSi2

T. Shibata, A. Wakita, T. W. Sigmon, J. F. Gibbons, and T. R. Cass

Appl. Phys. Lett. 40, 77 (1982); http://dx.doi.org/10.1063/1.92895 (4 pages) | Cited 8 times

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The oxidation properties of WSi2 formed by laser reaction of electron beam evaporated tungsten on silicon substrates are reported. Both steam and dry oxidation processes are investigated in the temperature range 900–1000 °C. Measurements of oxide thickness versus time show similar behavior for both processes (linear changing to parabolic) with essentially no loss of W observed. Transmission electron microscopy investigation before and after oxidation indicates no decomposition of the films and grain sizes growing from 100 to ≳500 nm.
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82.20.Pm Rate constants, reaction cross sections, and activation energies
82.30.-b Specific chemical reactions; reaction mechanisms

Rare‐earth oxides as artificial barriers in superconducting tunneling junctions

C. P. Umbach, A. M. Goldman, and L. E. Toth

Appl. Phys. Lett. 40, 81 (1982); http://dx.doi.org/10.1063/1.92896 (3 pages) | Cited 15 times

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Superconducting tunneling junctions have been prepared on Nb, Nb3Ge, V3Si, ErRh4B4, and Au base electrodes with either Pb or In counterelectrodes using a barrier of oxidized Er or Lu. Nb/RE/oxide/Pb Josephson junctions with very low leakage have been studied in detail. The ease of fabrication and the stability of the junctions under thermal cycling suggest that they may have technological significance.
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74.50.+r Tunneling phenomena; Josephson effects
74.70.-b Superconducting materials other than cuprates
73.40.Gk Tunneling
72.20.-i Conductivity phenomena in semiconductors and insulators

Formation of amorphous superconducting transition‐metal alloys by liquid quenching on hot substrates

K. Togano, H. Kumakura, and K. Tachikawa

Appl. Phys. Lett. 40, 84 (1982); http://dx.doi.org/10.1063/1.92897 (3 pages) | Cited 7 times

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An improved cooling rate has been achieved by liquid quenching on a hot substrate, which facilitates the preparation of amorphous and metastable crystalline states of refractory‐metal‐based alloys. The effectiveness has been proved by the experimental results for Mo‐Zr and Nb‐Si‐Ge alloys. A single amorphous phase was obtained from 40–60 at. % Zr. In the Nb‐Si‐Ge alloy system, amorphous and metastable A15 phases were obtained in a wide composition range. The superconducting properties and thermal stability of these phases have been studied.
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74.25.-q Properties of superconductors
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Problems with the external diffusion process for producing Nb3Sn‐Cu superconducting wire

J. D. Verhoeven, E. D. Gibson, and C. C. Cheng

Appl. Phys. Lett. 40, 87 (1982); http://dx.doi.org/10.1063/1.92898 (2 pages) | Cited 7 times

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It has been observed that in the external diffusion process for producing Nb3Sn‐Cu superconducting wire, dewetting of the Sn layer occurs for layer thicknesses on the order of 6 μm and larger. A mechanism for this dewetting is proposed and it is demonstrated that the problem may be eliminated by formation of an oxide skin on the outer surface of the Sn layer.
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74.25.-q Properties of superconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Laser sintering of VO2 film

Tomokuni Mitsuishi, Katsuya Okabe, and Yoshisato Sasaki

Appl. Phys. Lett. 40, 89 (1982); http://dx.doi.org/10.1063/1.92899 (2 pages) | Cited 5 times

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The conventional preparation process of VO2 temperature sensors requires the precise control of ambient atmosphere. This is one of the difficulties in their application to integrated devices. Laser sintering proved to be useful in overcoming this difficulty. Specimens of VO2 film (1.4×1.4×0.04 mm3 in size) printed on alumina substrates changed in electrical resistance by a factor of 102 at about 68 °C with increasing temperature, after exposing them, in open air, to a 2‐ms pulse beam from a ruby laser on relaxation oscillation, whose energy density was 6.5 J/cm2.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
42.62.-b Laser applications
72.80.Ga Transition-metal compounds
81.40.Rs Electrical and magnetic properties related to treatment conditions

Organic conductors as electron beam resist materials

Y. Tomkiewicz, E. M. Engler, J. D. Kuptsis, R. G. Schad, V. V. Patel, and M. Hatzakis

Appl. Phys. Lett. 40, 90 (1982); http://dx.doi.org/10.1063/1.92901 (3 pages) | Cited 2 times

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Conducting organic π‐donor halide complexes such as tetrathiafulvalene bromide were discovered to act as electron beam resists, which display a unique combination of useful properties. Exposure of sublimed films to an electron beam generates the neutral π donor and the halogen which is subsequently lost from the film. Depending on exposure conditions, either negative (solvent developed) or positive (in‐situ developed) resist images with a resolution of the order of 0.5 μ can be generated. The strongly absorbing (UV,vis.) and highly conducting (∼10/Ω cm) films were found to become transmitting and insulating upon electron beam irradiation.
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61.80.Fe Electron and positron radiation effects

Electron beam pattern generation in thin‐film organic dianhydrides

Paul H. Schmidt, David C. Joy, Martin L. Kaplan, and William L. Feldmann

Appl. Phys. Lett. 40, 93 (1982); http://dx.doi.org/10.1063/1.92902 (3 pages) | Cited 21 times

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Transparent, stable, electrically insulating, crystalline thin films of two aromatic organic dianhydrides, 3,4,9,10‐perylenetetracarboxylic dianhydride C24H8O6 and 1,4,5,8‐naphthalenetetracarboxylic dianhydride C14H4O6, were prepared by vapor deposition. On exposure to an electron beam dose of 0.05 C cm−2 the written areas of the films appeared visually blackened and were electrically conducting. This chemical transformation was found to be both dose and current density dependent. Fine lines with widths of 1000 Å were prepared by electron exposure at just above writing threshold doses. The chemical and electrical properties of the materials formed upon e‐beam treatment were found to be notably different from those of the starting anhydrides and useful for semiconductor device fabrication.
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81.40.Tv Optical and dielectric properties related to treatment conditions
82.30.-b Specific chemical reactions; reaction mechanisms
73.61.Ng Insulators
79.20.Kz Other electron-impact emission phenomena
FREE

Erratum: Ultrafast magnetophotoconductivity of semi‐insulating gallium arsenide [Appl. Phys. Lett. 39, 266 (1981)]

R. H. Moyer, P. Agmon, T. L. Koch, and A. Yariv

Appl. Phys. Lett. 40, 96 (1982); http://dx.doi.org/10.1063/1.93284 (1 page)

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Abstract Unavailable
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Ls Magneto-optical effects
73.25.+i Surface conductivity and carrier phenomena
99.10.Cd Errata
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