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15 Jan 1982

Volume 40, Issue 2, pp. 99-193

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CdI and CdBr photodissociation lasers at 655 and 811 nm: CdI spectrum identification and enhanced laser output with 114CdI2

M. N. Ediger, A. W. McCown, and J. G. Eden

Appl. Phys. Lett. 40, 99 (1982); http://dx.doi.org/10.1063/1.93005 (3 pages) | Cited 13 times

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Lasing on the B→X bands of CdI at 655 nm and CdBr at 811 nm has been obtained by photodissociating CdI2 and CdBr2 with an ArF laser. Also, the CdX (X = I, Br) B‐state radiative lifetimes and CdX2 quenching rate constants were found to be 32±3 ns, (9.2±1.1)×10−10 cm3 s−1, 25±4 ns and (7.9±3.3)×10−10 cm3 s−1, respectively. After synthesizing and photodissociating 114CdI2, the 114CdI laser spectrum was identified as arising from v′ = 0−2→v\ = 61, 62 transitions of the B→X band. The use of a single isotope of Cd (i.e., 114Cd) was also found to quadruple the energy output of the CdI laser and to make possible a dual‐wavelength metal‐halide laser, one operating simultaneously in the red (CdI) and near‐infrared (CdBr).
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)
33.20.Kf Visible spectra
31.50.Df Potential energy surfaces for excited electronic states

Observation of coherent Cerenkov radiation at optical frequencies

W. D. Kimura, D. Y. Wang, M. A. Piestrup, A. M. Fauchet, J. A. Edighoffer, and R. H. Pantell

Appl. Phys. Lett. 40, 102 (1982); http://dx.doi.org/10.1063/1.93022 (3 pages) | Cited 5 times

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Coherent Cerenkov radiation at 0.532 μm was observed from an optically bunched relativistic electron beam. Bunching was induced by means of the inverse Cerenkov effect wherein, to achieve phase matching, light at 1.06 μm from a Nd:YAG laser intersected the electron beam at the Cerenkov angle within a gaseous medium. The pressure dependence of this radiation was verified.
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41.60.-m Radiation by moving charges
29.40.Ka Cherenkov detectors

Generation of subpicosecond coherent optical pulses by passive mode locking of an AlGaAs diode laser

Hiroyuki Yokoyama, Hiromasa Ito, and Humio Inaba

Appl. Phys. Lett. 40, 105 (1982); http://dx.doi.org/10.1063/1.93023 (3 pages) | Cited 24 times

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Subpicosecond coherent optical pulses as short as 0.58 ps were generated for the first time by passive mode locking of an AlGaAs double heterostructure diode laser. It was realized by a simple configuration made of a conventional AlGaAs diode laser without antireflection coatings on both facets, which was aged and exhibiting self‐pulsation, placed in an external cavity. When the external cavity length was shorter than about 60 mm, almost complete mode locking was observed over the oscillation spectrum of 3.5 nm in width. Based on the second‐harmonic generation autocorrelation measurement, ultrashort coherent optical pulses from 0.58 to 1.2 ps in duration were demonstrated by increasing the external cavity length together with the proper control of the optical feedback effect and the pumping dc current.
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42.55.Px Semiconductor lasers; laser diodes
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Tin doping of active region in InGaAsP/InP lasers

N. Tamari

Appl. Phys. Lett. 40, 108 (1982); http://dx.doi.org/10.1063/1.93024 (3 pages) | Cited 3 times

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Intentional doping of the quaternary layer with n‐type dopant like Sn was found to avoid the problem of p‐n junction misplacement in InGaAsP/InP lasers. Accurate and reproducible location of the electrical junction within the active region has been realized. It has been found that the threshold current density as well as T0 of the lasers do not change up to a doping level of ∼4×1018 cm−3 in the active layer. The metallurgical study has shown that the crystalline perfection does not deteriorate by doping with Sn. These results suggest that the active layer can be doped with Sn in a broad concentration range in order to achieve special characteristics of the device (lasers or light emitting diodes) without deterioration of device performance.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Triboluminescence of silica core optical fibers

Jeffrey I. Zink, William Beese, John W. Schindler, and A. J. Smiel

Appl. Phys. Lett. 40, 110 (1982); http://dx.doi.org/10.1063/1.93025 (3 pages) | Cited 11 times

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The triboluminescence spectrum of optical fibers contains two prominent peaks, one at 430 nm and the other at 630 nm. The relative intensities vary with fiber type. The time dependence of the emission is related to the crack rate terminal velocity and to the creation and annihilation of moving cracks.
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78.60.Mq Sonoluminescence, triboluminescence
78.55.Hx Other solid inorganic materials
62.50.-p High-pressure effects in solids and liquids

Picosecond pulse generation from a synchronously pumped mode‐locked semiconductor laser diode

John C. AuYeung and Alan R. Johnston

Appl. Phys. Lett. 40, 112 (1982); http://dx.doi.org/10.1063/1.93026 (3 pages) | Cited 10 times

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A semiconductor laser diode was mode locked in an external cavity when synchronously pumped with 90‐ps current pulses. Transform‐limited optical pulses with a 10‐ps pulse width and a peak power of 160 mW were produced. Operating characteristics of such a system are described.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Hp Optical processors, correlators, and modulators

Degraded InGaAsP/InP double heterostructure laser observation with electron probe microanalyzer

Masahiro Seki, Mitsuo Fukuda, and Koichi Wakita

Appl. Phys. Lett. 40, 115 (1982); http://dx.doi.org/10.1063/1.93027 (3 pages) | Cited 11 times

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Dark spots associated with degradation in InGaAsP/InP double heterostructure lasers were examined by electron probe microanalyzer, cathodoluminescence micrograph, and sequential selective etching procedures. It has been clarified that these dark spots penetrate from the p‐cladding layer to the n‐cladding layer and have no direct relation with InP substrate defects. Segregation of As and Ga in an active layer geometrically correlates with these dark spots. Dark spot generation and segregation were seen to develop with degradation induced in the laser operation.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
42.55.Px Semiconductor lasers; laser diodes

Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic‐chemical vapor deposition

R. D. Burnham, D. R. Scifres, and W. Streifer

Appl. Phys. Lett. 40, 118 (1982); http://dx.doi.org/10.1063/1.93007 (2 pages) | Cited 14 times

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Stripe geometry lasers grown by metalorganic‐chemical vapor deposition lasing at 8260 Å (∼7% Al in the active region) are described. Pulsed current thresholds vary little with stripe width for 4‐, 6‐, and 8‐μm stripe widths. For 51 lasers that are 200±10 μm long with 4‐, 6‐, or 8‐μm stripe widths, the average threshold currents were 40.4, 41.1, and 42 mA, respectively, and 37 of these lasers fall within ±1 mA of these averages. External differential quantum efficiencies for these same lasers are 75, 67, and 63%.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Monolithic integrated microgratings and photodiodes for wavelength demultiplexing

T. Suhara, Y. Handa, H. Nishihara, and J. Koyama

Appl. Phys. Lett. 40, 120 (1982); http://dx.doi.org/10.1063/1.93008 (3 pages) | Cited 9 times

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The monolithic integration of micrograting filters and a photodetector array on a silicon substrate for optical wavelength demultiplexing is demonstrated. The demultiplexer is constructed with a series of micrograting filters fabricated by the electron beam direct writing technique in a chalcogenide (amorphous As2S3) film waveguide on a thermally oxidized silicon substrate and a Schottky barrier photodiode array fabricated on the Si surface.The device has the advantages of a high degree of design flexibility, high efficiency, low crosstalk, and very small dimensions. The design considerations and the fabrication process are described and the experimental results are discussed on the demultiplexing characteristics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
42.79.Dj Gratings
85.60.Dw Photodiodes; phototransistors; photoresistors

Inverse Zeeman scanning for the measurement of emission line profile in far ultraviolet region

Hideaki Koizumi, Konosuke Oishi, and Kazuo Yasuda

Appl. Phys. Lett. 40, 122 (1982); http://dx.doi.org/10.1063/1.93009 (2 pages) | Cited 1 time

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We developed a new technique to observe the profiles of resonance emission lines in UV and VUV regions with a simple apparatus. The radiation from a source passed through an absorption cell placed in a gap of an electromagnet. The wavelength of the absorption line was shifted by means of the inverse Zeeman effect. The emission line profiles were obtained by measuring the absorbance as a function of the magnetic field strength. The emission line profiles and significant self‐reversals were observed for Zn and Cd primary resonance lines at 213.9 and 228.8 nm, respectively.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Bistability and negative resistance in semiconductor lasers

Ch. Harder, K. Y. Lau, and A. Yariv

Appl. Phys. Lett. 40, 124 (1982); http://dx.doi.org/10.1063/1.93010 (3 pages) | Cited 21 times

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Experimental results of a buried heterostructure laser with a segmented contact to achieve inhomogeneous gain are presented. Measurements reveal a negative differential resistance over the absorbing section. Depending on the source impedance of the dc current source driving the absorbing section, this negative resistance can lead to (i) bistability with a very large hysteresis in the light‐current characteristic without self‐pulsation or (ii) a small hysteresis with self‐pulsations at microwave frequencies. An analysis, which includes the electrical part of the device, leads to an explanation of self‐pulsations in inhomogeneously pumped lasers without having to rely on a sublinear gain dependence on injected carrier concentration.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Picosecond high power extraction from an unstable resonator based injection‐locked XeCl laser

Thomas Varghese

Appl. Phys. Lett. 40, 127 (1982); http://dx.doi.org/10.1063/1.93011 (3 pages) | Cited 5 times

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Single pulse peak power of over 0.3 GW with good beam quality was obtained from an injection‐locked XeCl laser based on a positive branch confocal unstable resonator. The high power thus obtained has the potential of generating efficient high power tunable picosecond pulses from organic dyes in the UV and near UV region of the spectrum by pumping in a synchronous scheme.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Macroscopic surface roughness in metal‐dielectric composite films: Photothermal absorber applications

Glen A. Nyberg and R. A. Buhrman

Appl. Phys. Lett. 40, 129 (1982); http://dx.doi.org/10.1063/1.93012 (3 pages) | Cited 11 times

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Previous studies have shown that coevaporated metal‐dielectric composite films are quite smooth. But a substantially higher deposition temperature results in the surface roughness of Mo/Al2O3 composite films becoming larger than the mean film thickness. This effect was applied to photothermal solar absorbers where, for the first time, a stable selective absorber was produced which absorbs over 99% of the solar spectrum. These results have implications for other surface roughness dependent effects.
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68.55.-a Thin film structure and morphology
84.60.Jt Photoelectric conversion

Resonant degenerate four‐wave mixing in GaAs multiquantum well structures

J. Hegarty, M. D. Sturge, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 40, 132 (1982); http://dx.doi.org/10.1063/1.93013 (3 pages) | Cited 14 times

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We have observed degenerate four‐wave mixing, on a picosecond timescale, at the lowest two‐dimensional exciton resonance line of GaAs‐Al0.25Ga0.75As layer structures, grown by molecular beam epitaxy. Mixing is observed at exciton densities as low as 109 cm−2 per layer and is strongly resonant at the heavy exciton line, where the diffraction efficiency reaches a maximum of 12% for a 2×10−7 J/cm2 pump pulse.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Role of thermal diffusion in the redistribution of Cu during pulsed laser irradiating of Cu‐implanted Al

A. Miotello, L. F. Donà dalle Rose, and A. Desalvo

Appl. Phys. Lett. 40, 135 (1982); http://dx.doi.org/10.1063/1.93014 (3 pages) | Cited 11 times

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The inward diffusion of ion implanted Cu in Al during a nanosecond laser pulse is interpreted both as thermal and ordinary diffusion. Soret coefficients which reproduce the evolution of the implanted impurity profile as a function of the laser pulse parameters are obtained. These values are compared with the rather limited data available on thermal diffusion.
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79.20.Ds Laser-beam impact phenomena
66.10.C- Diffusion and thermal diffusion
64.70.D- Solid-liquid transitions

Surface structure of epitaxial Pd2Si thin films

Kenjiro Oura, Satoshi Okada, Yozo Kishikawa, and Teruo Hanawa

Appl. Phys. Lett. 40, 138 (1982); http://dx.doi.org/10.1063/1.93015 (3 pages) | Cited 12 times

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The surface structure of Pd2Si thin films epitaxially grown on clean Si (111) 7×7 surfaces has been studied by low‐energy electron diffracton (LEED) and Auger electron spectroscopy (AES). Heat treatment in the range of 200–600 °C causes surface segregation of elementary Si over a Pd2Si (0001) surface and produces a reconstructed 3×3 superstructure of Pd2Si. A nonreconstructed Pd2Si‐1×1 surface is produced after removing the segregated Si layer by Ar ion beams and its ordering is found to be not damaged by ion sputtering. A possible cause for the thermally induced Si segregation is also examined experimentally and discussed.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Electron spin resonance of AsGa antisite defects in fast neutron‐irradiated GaAs

R. Wörner, U. Kaufman, and J. Schneider

Appl. Phys. Lett. 40, 141 (1982); http://dx.doi.org/10.1063/1.93016 (3 pages) | Cited 109 times

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Strong electron spin resonance spectra of the As4+Ga antisite defect have been observed in fast neutron‐irradiated GaAs. Both in originally n‐type and p‐type materials the defect introduction is ≲3 cm−1. Thermal annealing of the AsGa defect occurs between 450 and 500 °C. This annealing stage is also characteristic for the recovering of electrical conductivity and infrared transparency of GaAs after particle irradiation and ion implantation. It is suggested that these phenomena are microscopically explained by thermal annihilation of antisite defects.
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61.72.J- Point defects and defect clusters
61.80.Hg Neutron radiation effects
76.30.Mi Color centers and other defects

Direct observation of electron leakage in InGaAsP/InP double heterostructure

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai

Appl. Phys. Lett. 40, 144 (1982); http://dx.doi.org/10.1063/1.93017 (3 pages) | Cited 20 times

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The electron leakage through the heterobarrier consisting of a thin InGaAsP active layer and a p‐InP confining layer was directly observed by using a novel InGaAsP/InP light‐emitting diode (LED) structure. In the present structure, electrons leaking from the active layer were confined in a subsidiary quaternary layer having a crystal composition different from that of the active layer, and the recombination emission caused by these electrons was optically detected. Experimental results showed that significant electron leakage can occur in the present InGaAsP/InP double heterostructure (DH) system, suggesting a possibility of the electron leakage being one of the dominant mechanisms of sublinearity in the light intensity‐current characteristics in InGaAsP/InP DH LED’s operating at wavelengths shorter than 1.3 μm and also of the temperature dependence of threshold current in laser diodes.
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85.60.Jb Light-emitting devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy

K. Y. Cheng, A. Y. Cho, T. J. Drummond, and H. Morkoç

Appl. Phys. Lett. 40, 147 (1982); http://dx.doi.org/10.1063/1.93018 (3 pages) | Cited 43 times

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Modulation doped Ga0.47In0.53As‐Al0.48In0.52 As single‐period heterostructures have been prepared by molecular beam epitaxy (MBE). Electron mobilities as high as 8915 cm2/V s at 300 K, 60 120 cm2/V s at 77 K, and 90 420 cm2/V s at 10 K were obtained with an average electron concentration of ∼1017 cm−3. These results represent a mobility enhancement over uniformly doped Ga0.47In0.53 As with the same carrier concentration by about a factor of 6 at 77 K and by a factor of 2 at 300 K. Single‐period modulation doped heterostructures have shown enhanced mobility in spite of the relative positions of the Si‐doped Al0.48In0.52 As layer and the undoped Ga0.47In0.53 As layer in contrast to the case of GaAs/AlxGa1−x As system where mobility enhancement has only been observed for MBE grown AlxGa1−x As on top of the undoped GaAs layer.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Measurement of fluctuations affecting domain formation in transferred‐electron logic devices using picosecond optical pulses

T. F. Carruthers, J. F. Weller, H. F. Taylor, and T. G. Mills

Appl. Phys. Lett. 40, 150 (1982); http://dx.doi.org/10.1063/1.93006 (3 pages)

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Picosecond optical pulses have been used to bias the gate region of a transferred‐electron logic device to the vicinity of the threshold for domain formation. Single domains with rise and fall times of less than 50 ps are produced when the device is illuminated between the cathode and Schottky‐barrier gate electrodes. The probability of domain generation is found to vary with optical intensity and applied bias voltage. Fitting a model of the effects of thermal carrier density fluctuations to these data yields a value for the rms fluctuating electric field component affecting domain formation of 123±14 V/cm in the devices studied.
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72.20.Ht High-field and nonlinear effects
72.70.+m Noise processes and phenomena
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.40.+w Photoconduction and photovoltaic effects

On the atomic structure of the Σ = 3, {112} twin in silicon

C. Fontaine and D. A. Smith

Appl. Phys. Lett. 40, 153 (1982); http://dx.doi.org/10.1063/1.93019 (2 pages) | Cited 20 times

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A new model is proposed for the {112} interface. The essential feature is that the interface region is highly symmetrical and composed of five and seven membered rings, which is contrary to some earlier predictions but consistent with observations of other grain boundaries in materials with the diamond cubic structure.
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61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
61.72.Mm Grain and twin boundaries

Molecular beam epitaxial growth of single‐crystal Al films on GaAs (110)

G. A. Prinz, J. M. Ferrari, and M. Goldenberg

Appl. Phys. Lett. 40, 155 (1982); http://dx.doi.org/10.1063/1.93020 (3 pages) | Cited 20 times

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Molecular beam epitaxy methods have been used to grow good quality single‐crystal films of fcc Al on (110) GaAs. These films were characterized by Auger, high energy electron diffraction, and glancing incidence x‐ray diffraction using a Read camera. Successful growth was found to be dependent upon increased flux rates and lowered substrate temperatures in order to overcome the high surface mobility of Al on GaAs.
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68.55.-a Thin film structure and morphology
73.40.-c Electronic transport in interface structures

Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography

M. W. Geis, Henry I. Smith, B‐Y. Tsaur, John C. C. Fan, E. W. Maby, and D. A. Antoniadis

Appl. Phys. Lett. 40, 158 (1982); http://dx.doi.org/10.1063/1.93021 (3 pages) | Cited 52 times

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Large‐area films of recrystallized Si with (100) texture, preferred in‐plane orientation, and grain sizes ≳1× 10 mm have been produced by using a strip‐heater oven to move a narrow molten zone across Si films on SiO2. A composite encapsulation layer of SiO2 and Si3N4 over the Si leads to smooth surfaces and (100) texture. The 〈100〉 axes of grains tend to lie along the direction of motion of the molten zone. A grid of faceted pits etched anisotropically into the Si permits determination of local orientation. As described elsewhere, the recrystallized films have been used for the fabrication of metal‐oxide semiconductor field‐effect transistors which exhibit electron surface mobilities comparable to devices fabricated on single‐crystal Si.
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68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
85.30.Tv Field effect devices

Outdiffusion of the main electron trap in bulk GaAs due to thermal treatment

S. Makram‐Ebeid, D. Gautard, P. Devillard, and G. M. Martin

Appl. Phys. Lett. 40, 161 (1982); http://dx.doi.org/10.1063/1.93028 (3 pages) | Cited 64 times

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The profile of the main electron trap in bulk GaAs has been studied following thermal treatments with different capping and implantation conditions. Considerable departure from an idealized outdiffusion behavior (error function) is observed and this is attributed to surface As loss. The extent of the surface redistribution of EL2 is comparable to, or more important than that frequently observed for the Cr impurity.
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78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
66.30.Lw Diffusion of other defects
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters

Silicon‐silicon interfaces

David Redfield

Appl. Phys. Lett. 40, 163 (1982); http://dx.doi.org/10.1063/1.93029 (3 pages) | Cited 15 times

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A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for vacuum measurements. Such grain boundaries may therefore be regarded as Si‐Si interfaces in the sense used in surface physics. It is shown that the thermal history and the dissolved oxygen of the silicon play major roles in determining the interface properties.
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73.20.-r Electron states at surfaces and interfaces
73.40.-c Electronic transport in interface structures
85.30.Hi Surface barrier, boundary, and point contact devices
61.72.Mm Grain and twin boundaries
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