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1 Feb 1982

Volume 40, Issue 3, pp. 195-285

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Submicroscopic contact imaging with visible light by energy transfer

U. Ch. Fischer and H. P. Zingsheim

Appl. Phys. Lett. 40, 195 (1982); http://dx.doi.org/10.1063/1.93050 (3 pages) | Cited 15 times

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The resolution of contact imaging with light is limited by the distance between object and image and not by the wavelength. Contact imaging with visible light at submicroscopic resolution (100 nm) is demonstrated using the concept of imaging by energy transfer. The bleaching of a dye is inhibited by energy transfer to a metal in close proximity. This mechanism is exploited for imaging a planar metal pattern onto a film of a cyanine dye.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Dynamical switching characteristics of a bistable injection laser

K. Y. Lau, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 40, 198 (1982); http://dx.doi.org/10.1063/1.93051 (2 pages) | Cited 13 times

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The switching characteristics of a bistable injection laser with very large hysteresis is examined. Switch‐on delays are shown to exhibit a ’’critical’’ part and a ’’noncritical’’ part, both of which can be reduced by increasing the overdrive current. It is possible to obtain fairly fast switching time (<20 ns) with a strong overdrive. Nominal delays of 100–200 ns result under moderate overdrives. These long time scales are due to long carrier lifetimes in the carrier‐depleted absorption section, a property intrinsic to these bistable injection lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Observations of the morphology of laser‐induced damage in copper mirrors

S. J. Thomas, R. F. Harrison, and J. F. Figueira

Appl. Phys. Lett. 40, 200 (1982); http://dx.doi.org/10.1063/1.93052 (3 pages) | Cited 23 times

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The results of multiple‐pulse damage tests on copper mirrors using 1.7‐ns CO2 lasers are reported. The measured reduction in the brightness reflectivity of the mirrors is shown to be correlated to the dramatic appearance of fine scale microstructure on the mirror surface. Scanning electron micrographs of this surface structure are presented and possible explanations of the effects are discussed.
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42.15.Eq Optical system design
42.87.-d Optical testing techniques
42.86.+b Optical workshop techniques
42.79.Bh Lenses, prisms and mirrors

Far‐infrared imaging antenna arrays

Dean P. Neikirk, David B. Rutledge, Michael S. Muha, Hyeon Park, and Chang‐Xuan Yu

Appl. Phys. Lett. 40, 203 (1982); http://dx.doi.org/10.1063/1.93053 (3 pages) | Cited 23 times

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A far‐infrared imaging antenna array has been demonstrated for the first time. The array is a line of evaporated silver bow‐tie antennas on a fused‐quartz substrate with bismuth‐microbolometer detectors. The measured optical transfer function shows that the system is diffraction limited. This imaging array should find direct application in fusion plasma diagnostics. If the microbolometers can be replaced by more sensitive diode detectors, the array should also find application in radiometry and radar.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
84.40.Ba Antennas: theory, components and accessories
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

External off and on switching of a bistable optical device

S. S. Tarng, K. Tai, J. L. Jewell, H. M. Gibbs, A. C. Gossard, S. L. McCall, A. Passner, T. N. C. Venkatesan, and W. Wiegmann

Appl. Phys. Lett. 40, 205 (1982); http://dx.doi.org/10.1063/1.93054 (3 pages) | Cited 18 times

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A GaAs etalon has been switched on in a detector‐limited time of 200 ps by a 10‐ps, 600‐nm, 1‐nJ pulse and switched off in ⩽20 ns by a 7‐ns, 600‐nm, 300‐nJ pulse.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
85.60.-q Optoelectronic devices

High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition

C. S. Hong, J. J. Coleman, P. D. Dapkus, and Y. Z. Liu

Appl. Phys. Lett. 40, 208 (1982); http://dx.doi.org/10.1063/1.93042 (3 pages) | Cited 7 times

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Deep Zn‐diffused, 4‐μm stripe thin p active layer GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition are reported. Threshold currents as low as 40 mA (length 220 μm), a characteristic temperature as large as 170 °C, and external differential quantum efficiencies as high as 80–90% are obtained. Single longitudinal and transverse mode operation of these lasers is also observed.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Fresnel reflection and transmission at a planar boundary from media of equal refractive indices

C. Lee Giles and Walter J. Wild

Appl. Phys. Lett. 40, 210 (1982); http://dx.doi.org/10.1063/1.93043 (3 pages) | Cited 11 times

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Some interesting properties of the Fresnel equations governing the reflection of plane electromagnetic waves at an interface between differing media are presented. The phenomenon of reflection that is independent of angle of incidence is shown to be theoretically possible if the media possess different magnetic permeabilities.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Interference enhanced Kerr spectroscopy for very thin absorbing films

G. A. N. Connell

Appl. Phys. Lett. 40, 212 (1982); http://dx.doi.org/10.1063/1.93044 (3 pages) | Cited 18 times

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A new method of obtaining polar Kerr spectra from very thin highly absorbing films (α≳104 cm−1) is described. The technique which is termed interference enhanced Kerr spectroscopy is shown theoretically to produce a gain in the Kerr intensity of 10–103 (depending on the optical constants of the material) over that expected from a thick sample. The potential of the method is demonstrated theoretically using MnBi data and experimentally using an amorphous Tb‐Fe alloy. The use of this interference technique for studies of other mode conversion phenomena is also mentioned.
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78.20.Ls Magneto-optical effects
78.66.Bz Metals and metallic alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials

Transient frequency and temperature variation of GaInPAs lasers under pulsed excitation

Ryoichi Ito, Masuo Suyama, and Nagaatsu Ogasawara

Appl. Phys. Lett. 40, 214 (1982); http://dx.doi.org/10.1063/1.93045 (3 pages) | Cited 4 times

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Transient frequency and temperature variation of GaInPAs buried heterostructure lasers have been measured by means of a Michelson interferometer. It is demonstrated that the thermal resistance, the heat generation rate in the active layer, and the internal quantum efficiency can be deduced by this method. The dependence of the laser frequency on current is also estimated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 40, 217 (1982); http://dx.doi.org/10.1063/1.93046 (3 pages) | Cited 107 times

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Extremely low threshold GRIN‐SCH lasers with single and double active layers were prepared by molecular beam epitaxy as a result of an increased optical confinement, a significant reduction in the internal loss αi, and the increased gain constant β. Averaged Jth 250 A/cm2 and 160 A/cm2 for broad‐area Fabry–Perot diodes of cavity lengths 380 and 1125 μm, respectively, and averaged external differential quantum efficiency ηD of 65–80 % were obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Dependence of local sound vibration on time frequency in a monolithic array transducer

Noriaki Saiga and Tatsuro Suzuki

Appl. Phys. Lett. 40, 220 (1982); http://dx.doi.org/10.1063/1.93047 (3 pages) | Cited 1 time

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An approach of increasing spatial resolution in a monolithic array transducer was carried out which utilized the thickness vibration at frequencies slightly lower than the resonance band. At those frequencies, the optical probing manifested that an usual spatial impulse response shifted into a more sharp and monotonously damping one with a peak amplitude comparable to those in resonance. An actual imaging as a receiving array demonstrated the improvement of spatial resolution and the high uniformity of image contrast.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.60.Lq Acoustic imaging, displays, pattern recognition, feature extraction

Excimer fluorescence for plasma displays

W. L. Nighan and C. M. Ferrar

Appl. Phys. Lett. 40, 223 (1982); http://dx.doi.org/10.1063/1.93048 (2 pages) | Cited 2 times

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Experimental tests confirm analytical predictions that usefully bright excimer fluorescence in the visible region can be produced under discharge conditions achievable in conventional ac plasma panel configurations. Results are presented for the Xe2Cl excimer exhibiting broadband blue emission peaked at 476 nm.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
52.80.Hc Glow; corona
52.80.-s Electric discharges
85.60.Pg Display systems

Low energy electron impact attachment and ionization in HgBr2

W. J. Wiegand and L. R. Boedeker

Appl. Phys. Lett. 40, 225 (1982); http://dx.doi.org/10.1063/1.93049 (3 pages) | Cited 4 times

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Cross sections for low energy electron impact attachment and ionization in mercuric bromide (HgBr2) have been measured using an electron beam experiment. The ion products of these reactions, as identified by mass analysis, are Br− and chiefly HgBr+2. Rate coefficients computed from the measured cross sections were found to be in good agreement with values determined independently from an electron swarm experiment.
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34.80.Gs Molecular excitation and ionization
82.20.Pm Rate constants, reaction cross sections, and activation energies

The annealing behavior of antimony implanted polycrystalline silicon

J. L. Tandon, H. B. Harrison, C. L. Neoh, K. T. Short, and J. S. Williams

Appl. Phys. Lett. 40, 228 (1982); http://dx.doi.org/10.1063/1.93055 (3 pages) | Cited 9 times

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Dopant redistribution and sheet resistance of polycrystalline silicon films implanted with 100‐keV Sb+ ions to a dose of 1×1015 cm−2 or 3×1015 cm−2 have been investigated as a function of different annealing conditions. The correlation between Sb depth profiles, as measured by Rutherford backscattering, and sheet resistance provides considerable insight into the Sb doping behavior. In particular, low‐temperature (∼600 °C) short‐time (0.5 h) anneals resulted in good dopant activation without redistribution of the implanted Sb, whereas higher‐temperature anneals (≳900 °C) resulted in considerable redistribution. The sheet resistance of the films appeared to be controlled, to a large extent, by dopant segregation at grain boundaries and the fraction of the redistributed Sb within the grains.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
64.75.-g Phase equilibria

Experimental investigation of the infrared absorption saturation in p‐type germanium and silicon

R. B. James, Edgard Schweig, D. L. Smith, and T. C. McGill

Appl. Phys. Lett. 40, 231 (1982); http://dx.doi.org/10.1063/1.93056 (3 pages) | Cited 5 times

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We investigate the room‐temperature absorption saturation of p‐Ge and p‐Si for several samples over a range of doping densities for light having wavelengths of 10.6 and 9.6 μm. The transmission data can be fairly well described using an intensity dependent absorption coefficient characteristic of an inhomogeneously broadened two‐level system. Measurements of the saturation intensity of p‐Ge show that Is increases monotonically with increasing hole concentration, and that the resonant transition is significantly easier to saturate in p‐Ge than in p‐Si for the samples we examined.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.-e Optical properties of bulk materials and thin films

Observation of two modes of current transport through phosphorus‐doped amorphous hydrogenated silicon Schottky barriers

A. Madan, W. Czubatyj, J. Yang, M. S. Shur, and M. P. Shaw

Appl. Phys. Lett. 40, 234 (1982); http://dx.doi.org/10.1063/1.93057 (3 pages) | Cited 8 times

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The influence of phosphorus impurities in the active layer of amorphous hydrogenated silicon Schottky barriers is investigated by experimentally studying the current‐voltage characteristics of the structure and the physical and electronic properties of the material. With increasing phosphorus concentration excess diode currents develop. Numerical analysis shows that (1) these currents are due to hopping within an impurity band produced by the impurities and (2) a two‐channel conduction mechanism is in quantitative agreement with the data.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Ng Disordered solids
73.30.+y Surface double layers, Schottky barriers, and work functions

First and second order twin boundaries in edge defined film growth silicon ribbon

B. Cunningham, H. Strunk, and D. G. Ast

Appl. Phys. Lett. 40, 237 (1982); http://dx.doi.org/10.1063/1.93058 (3 pages) | Cited 17 times

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The equilibrium defect structure of edge defined film‐fed growth ribbons consists of linear twins and twin bundles lying parallel to the growth direction. These twins show similar etching behavior in spite of the fact that their electrical activity i.e. efficiency as recombination centers, can vary greatly. Correlated electron beam induced current microscopy and high voltage transmission electron microscopy show (i) that some of the linear boundaries consist of alternating sections of coherent first order twins and incoherent second order twins of the {111}/{115} type and (ii) that the first order twins are not electrically active, whereas the second order twins act as strong recombination centers. Structural models of the {111}/{115} interface indicate a large fraction of dangling bonds. Macroscopically, the alternating sections of these twin boundaries form single straight boundaries running parallel to the growth direction of the ribbon. In etching experiments the alternating sections of boundaries described above are therefore difficult to differentiate from coherent first order twins.
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61.72.Mm Grain and twin boundaries
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

A technique for rapidly alternating boron and arsenic doping in ion‐implanted silicon molecular beam epitaxy

R. G. Swartz, J. H. McFee, A. M. Voshchenkov, S. N. Finegan, and Y. Ota

Appl. Phys. Lett. 40, 239 (1982); http://dx.doi.org/10.1063/1.93059 (3 pages) | Cited 6 times

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See Also: Erratum

Show Abstract
This letter reports the use of boron ion implantation doping during simultaneous growth of silicon molecular beam epitaxy. It describes further a technique for epitaxial growth of abrupt silicon p‐n junctions by rapid changeover during growth between boron and arsenic ion beams. This is expected to be of importance in a variety of applications, including, for example, high speed bipolar junction transistors.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Carbon‐oxygen complexes as nuclei for the precipitation of oxygen in Czochralski silicon

G. S. Oehrlein, J. L. Lindström, and J. W. Corbett

Appl. Phys. Lett. 40, 241 (1982); http://dx.doi.org/10.1063/1.93060 (3 pages) | Cited 24 times

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Changes in the infrared absorption bands of different carbon‐oxygen complexes which exist in as‐grown Czochralski crystals occur concurrently with the precipitation of the interstitial oxygen during high‐temperature heat treatment. The rate of change in the interstitial oxygen concentration and in the infrared absorption due to the carbon‐oxygen complexes can be affected both in the same way through changes in heat treatment parameters such as the temperature and ambient gas. These results support the view that the different carbon‐oxygen complexes act as heterogeneous nuclei for oxygen precipitation in Czochralski silicon.
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61.72.jd Vacancies
61.72.jj Interstitials
78.40.Fy Semiconductors
81.10.Fq Growth from melts; zone melting and refining

Donor energy level for Se in Ga1−xAlxAs

Jane J. Yang, Lavada A. Moudy, and William I Simpson

Appl. Phys. Lett. 40, 244 (1982); http://dx.doi.org/10.1063/1.93061 (3 pages) | Cited 42 times

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Electrical properties and the donor energy level in Se‐doped n‐Ga1−xAlxAs (0⩽x⩽0.82) prepared by metalorganic chemical vapor deposition have been investigated. The van der Pauw technique was used to measure the electrical properties of n‐Ga1−xAlxAs. The resistivity and electron concentration of Se‐doped Ga1−xAlxAs were found to be strongly affected by the donor energy level for Se. The donor energy levels ED of Se in Ga1−xAlxAs was found to remain constant at 0.003 eV for x<0.25. For x≳0.25, ED takes the form of an inverted V with a maximum at the direct‐indirect band crossover.
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72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor deposition

W. Stutius

Appl. Phys. Lett. 40, 246 (1982); http://dx.doi.org/10.1063/1.93062 (3 pages) | Cited 17 times

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Thin layers of ZnSe were grown on (100) GaAs substrates by organometallic chemical vapor deposition in the presence of ammonia with the intent to incorporate nitrogen as a group V acceptor. Low‐temperature photoluminescence studies confirm that nitrogen is indeed incorporated as a shallow impurity with an activation energy of between ∼110 meV. ZnSe grown in the presence of phosphine gas, on the other hand, exhibits a photoluminescence spectrum characteristic of deep impurity level. A comparison of these results with other published data suggests that both N and P are incorporated as substitutional acceptors replacing Se.
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72.80.Ey III-V and II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.40.Fy Semiconductors

Investigation of impurity variations by cathodoluminescence imaging: Application to GaSb:Te

A. K. Chin and W. A. Bonner

Appl. Phys. Lett. 40, 248 (1982); http://dx.doi.org/10.1063/1.93041 (4 pages) | Cited 5 times

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Crystals grown by the Czochralski technique frequently exhibit periodic variations of impurity concentration. These growth striations are microscopic in size and provide detailed information on the growth conditions. Although these striations are easily revealed by chemical etching, quantitative changes in carrier concentration are not easily determined. In this letter, the cathodoluminescence (CL), efficiency of GaSb:Te crystals is presented as a function of carrier concentration. The periodic variations in CL intensity, spatially correlated with growth striations revealed by an etchant, corresponds to ∼20% changes in carrier concentration. Finally, within the resolution of the CL technique, no evidence of a second phase is found in GaSb crystals doped with Te to the solubility limit.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.60.Hk Cathodoluminescence, ionoluminescence
81.10.Fq Growth from melts; zone melting and refining

Electron concentration dependence of Hall factor in In0.53Ga0.47As

Y. Takeda and M. A. Littlejohn

Appl. Phys. Lett. 40, 251 (1982); http://dx.doi.org/10.1063/1.93063 (3 pages) | Cited 3 times

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The Hall factor in In0.53Ga0.47As is calculated as a function of electron concentration between 1×1014 cm−3 and 1×1019 cm−3 at 300 K with carrier compensation ratios (ND+NA )/n = 1,2,5, and 10. The results give a clear relation between the Hall mobility and the drift mobility which has been a very ambiguous relation thus far. Temperature dependence of the Hall factor is also presented at several concentrations.
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63.20.K- Phonon interactions
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Dp General theory, scattering mechanisms
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Hydrogen passivation of copper‐related defects in germanium

S. J. Pearton

Appl. Phys. Lett. 40, 253 (1982); http://dx.doi.org/10.1063/1.93064 (3 pages) | Cited 30 times

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The passivation of deep acceptor level defects (Ev +0.33 eV, Ev +0.19 eV) associated with copper in single‐crystal germanium by reaction with atomic hydrogen has been observed using deep level transient spectroscopy. The concentration profile of the Ev +0.33 eV center is presented as a function of the duration and temperature of the exposure to atomic hydrogen—when exposed for 3 h at 300 °C, 90% of the acceptor defects were passivated to a depth of ∼80 μm.
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78.40.Fy Semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments

Metal/tunnel‐barrier/semiconductor/tunnel‐barrier/metal fast photodetector

Suwat Thaniyavarn and T. K. Gustafson

Appl. Phys. Lett. 40, 255 (1982); http://dx.doi.org/10.1063/1.93065 (3 pages)

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A novel symmetric metal/tunnel‐barrier/silicon/tunnel‐barrier/metal planar junction fast photodetector is described. The device exhibits an observed pulse width of about 45‐ps full width at half‐maximum in response to synchronously pumped mode‐locked rhodamine 6G dye laser pulses of <10‐ps duration at 6000‐Å wavelength. Detection sensitivity and dark current level are uniquely controlled by adjusting the tunnel‐barrier thicknesses, without affecting the response speed. The particular detector described here has a sensitivity of order 1/2 mA/mW in response to the cw HeNe laser wavelength, and a dark current below 1 nA at <20‐V bias.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
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