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15 Feb 1982

Volume 40, Issue 4, pp. 289-355

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AlGaAs lasers with micro‐cleaved mirrors suitable for monolithic integration

H. Blauvelt, N. Bar‐Chaim, D. Fekete, S. Margalit, and A. Yariv

Appl. Phys. Lett. 40, 289 (1982); http://dx.doi.org/10.1063/1.93079 (2 pages) | Cited 20 times

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A technique has been developed for cleaving the mirrors of AlGaAs lasers without cleaving the substrate. Micro‐cleaving involves cleaving a suspended heterostructure cantilever by ultrasonic vibrations. Lasers with microcleaved mirrors have threshold currents and quantum efficiencies identical to those of similar devices with conventionally cleaved mirrors.
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42.55.Px Semiconductor lasers; laser diodes

Regenerative pulsations from an intrinsic bistable optical device

J. L. Jewell, H. M. Gibbs, S. S. Tarng, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 40, 291 (1982); http://dx.doi.org/10.1063/1.93080 (3 pages) | Cited 27 times

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Regenerative pulsations of the output of a GaAs etalon are reported in good agreement with computer simulations of opposing thermal and free‐exciton refractive‐index effects.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
85.60.-q Optoelectronic devices

Proton‐isolated narrow stripe visible laser grown by metalorganic chemical vapor deposition

Yoshifumi Mori, Hiromitsu Sato, Masao Ikeda, Osamu Matsuda, Kunio Kaneko, and Naozo Watanabe

Appl. Phys. Lett. 40, 293 (1982); http://dx.doi.org/10.1063/1.93081 (3 pages) | Cited 3 times

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Lasing characteristics were investigated on the narrow stripe visible laser grown by metalorganic chemical vapor deposition. The shortest emission wavelength achieved was 715 nm in pulsed operation. While the pulsed threshold current was essentially independent of the stripe width, the threshold current under cw operation increased with decreasing stripe width. The light‐output power linearly increased without kinks up to 17 mW per facet for 760‐nm devices with less than a 5‐μm stripe. The differential quantum efficiency was as high as 70% and was independent both of the stripe width and of the emission wavelength. The beam pattern parallel to the junction plane was non‐Gaussian with the full width at half‐maximum power of 33°. Beam aspect ratio was less than 1.2.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology

Near‐infrared picosecond pulse generation in a cw mode‐locked dye laser pumped directly by an argon ion laser

R. K. Jain

Appl. Phys. Lett. 40, 295 (1982); http://dx.doi.org/10.1063/1.93082 (3 pages) | Cited 3 times

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We describe the efficient generation of wavelength‐tunable picosecond pulses in the deep red and near‐infrared spectral regions (∼6000–8000 Å) in a synchronously mode‐locked cw dye laser that is pumped directly by 5145‐Å radiation from an argon ion laser. Operation of the dye laser in the near infrared was achieved with the use of an excitation transfer mixture of commercial laser dyes. With 1 W of average pump power, an average output power of 70 mW was obtained at the peak of the tuning curve.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.72.-g Optical sources and standards
42.79.-e Optical elements, devices, and systems
06.60.Jn High-speed techniques (microsecond to femtosecond)

Self‐pulsing and chaos in distributed feedback bistable optical devices

Herbert G. Winful and Gene D. Cooperman

Appl. Phys. Lett. 40, 298 (1982); http://dx.doi.org/10.1063/1.93083 (3 pages) | Cited 83 times

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We show that the light transmitted by a nonlinear distributed feedback structure can be steady (time independent), periodic, or chaotic depending on the intensity of the input cw beam. The feasibility of an experimental demonstration of such behavior is discussed.
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63.10.+a General theory
42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Electron beam pumped cw Hg ion laser

J. J. Rocca, J. D. Meyer, and G. J. Collins

Appl. Phys. Lett. 40, 300 (1982); http://dx.doi.org/10.1063/1.93084 (3 pages) | Cited 7 times

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We have obtained cw laser action using electron beam excitation of a He‐Hg mixture. This represents a new method of exciting cw lasers and offers the possibility of increased efficiency for ion lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Phase sensitivity and linewidth narrowing in a Fox–Smith configured semiconductor laser

S. J. Petuchowski, R. O. Miles, A. Dandridge, and T. G. Giallorenzi

Appl. Phys. Lett. 40, 302 (1982); http://dx.doi.org/10.1063/1.93070 (3 pages) | Cited 1 time

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The behavior and spectral characteristics of a constricted double heterojunction injection laser in a regime in which the lasing characteristics are dominated by a cavity comprised of two external mirrors is reported. The Fox–Smith configuration is shown to limit the laser’s emission (previously multimode) to a single longitudinal mode with a linewidth of less than 200 kHz. It is also shown that this laser interferometer configuration is effective as an extended, external cavity laser diode sensor.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Longitudinal mode spectra of diode lasers

W. Streifer, D. R. Scifres, and R. D. Burnham

Appl. Phys. Lett. 40, 305 (1982); http://dx.doi.org/10.1063/1.93071 (3 pages) | Cited 33 times

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A theory is presented which explains the longitudinal mode spectra of diode lasers. The theory is based on spontaneous emission coupling into the longitudinal modes and the excellent agreement with experimental data for both gain guided and real refractive index waveguide diode lasers is obtained because of the more accurate and detailed modeling of the spontaneous emission coupling and the laser itself.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Low‐temperature coefficient bulk acoustic wave composite resonators

J. S. Wang and K. M. Lakin

Appl. Phys. Lett. 40, 308 (1982); http://dx.doi.org/10.1063/1.93072 (3 pages) | Cited 12 times

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This letter reports on an acoustic bulk wave resonator structure having an absolute temperature coefficient of series or parallel resonant frequency of less than 4 ppm/°C over the temperature range −20 to +120 °C comparing favorably with that of conventional AT cut quartz. In addition, the resonant Q was 7600 for parallel and 7300 for series resonance at frequencies near 330 MHz for the fundamental mode. The resonator is composed of a unique composition of an AlN piezoelectric film sputtered on a single‐crystal silicon membrane for a total thickness of less than 10 μ. The resonator coupling coefficient was found to be 2.5% corresponding to film coupling of 12%. The AlN films were prepared in a dc planar magnetron reactive sputtering system.
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43.38.Hz Transducer arrays, acoustic interaction effects in arrays

Photoacoustic pulse generation and probe‐beam deflection for ultrasonic velocity measurements in liquids

W. Zapka and A. C. Tam

Appl. Phys. Lett. 40, 310 (1982); http://dx.doi.org/10.1063/1.93073 (3 pages) | Cited 8 times

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We have demonstrated a noncontact, fast, and accurate method for ultrasonic measurements in liquids. A pulse laser beam produces an acoustic pulse, whose propagation is monitored by its deflection effects on two cw probe beams. All laser beams are parallel to, but displaced from, one another. The acoustic velocity can be measured to an accuracy of 5 parts in 104 in a measurement time of 100 μs. Temperature‐dependent velocities are measured for ethanol, methanol, water, as well as for concentrated sulfuric acid (which has not been measured previously).
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Bf Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in liquids, liquid crystals, suspensions, and emulsions

Fiber optic laser probe for acoustic wave measurements

R. L. Jungerman, J. E. Bowers, J. B. Green, and G. S. Kino

Appl. Phys. Lett. 40, 313 (1982); http://dx.doi.org/10.1063/1.93074 (3 pages) | Cited 6 times

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An optical probe has been developed for acoustic surface waves using single‐mode fiber to illuminate the sample. The scanned fiber probe has an effective spot size of 4 μm without the use of focusing lenses. 34% of the incident light re‐enters the fiber from a specular reflector. The signal from the sample is combined with a reference in a single fiber, eliminating misalignment in the interferometric measurement. Experimental results are presented for a LiNbO3 focused transducer surface acoustic wave (SAW) device. On this device, the probe exhibits 60‐dB dynamic range and 3×10−2 Å minimum sensitivity. The resolution, sensitivity, and flexibility of the fiber probe make it applicable to crack detection in nondestructive testing.
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43.35.Pt Surface waves in solids and liquids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
42.81.-i Fiber optics

Microstrain in laser‐crystallized silicon islands on fused silica

S. A. Lyon, R. J. Nemanich, N. M. Johnson, and D. K. Biegelsen

Appl. Phys. Lett. 40, 316 (1982); http://dx.doi.org/10.1063/1.93075 (3 pages) | Cited 33 times

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Residual strain in cw laser‐crystallized silicon thin films has been measured with high spatial resolution (∼5 μm) by Raman spectroscopy. Thin films of polycrystalline silicon were defined into moated islands and patterned stripes on fused silica substrates and encapsulated with silicon nitride. Raman scattering was used to measure local strain at various points in and near crystallized islands, and the results reveal that the silicon film is under tension. The observations indicate that a major component of the stress in the film arises from pinning of the silicon at the silicon‐fused silica interface at the solidification temperature followed by differential thermal contraction.
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68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics
61.72.-y Defects and impurities in crystals; microstructure
81.10.Fq Growth from melts; zone melting and refining

Growth of single‐crystal silicon islands on bulk fused silica by CO2 laser annealing

W. G. Hawkins, J. G. Black, and C. H. Griffiths

Appl. Phys. Lett. 40, 319 (1982); http://dx.doi.org/10.1063/1.93076 (3 pages) | Cited 21 times

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A CO2 laser beam focused to 50 μm was used to heat bulk fused silica which had previously defined Si3N4 encapsulated chemical vapor deposited polycrystalline silicon islands (25×100 μm) on its surface. It was easily possible to melt the silicon and force recrystallization without damaging the fused silica substrate. The recrystallization process produces single‐crystal islands under a wide variety of laser treatment parameters. Under certain conditions, the recrystallized islands exhibit a (100) plane parallel to the substrate. These results are the first demonstration of oriented single‐crystal thin‐film growth using island predefinition, which eliminates thermal stress induced microcracking resulting from the mismatch in expansion between silicon and bulk fused silica.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Stress‐enhanced carrier mobility in zone melting recrystallized polycrystalline Si films on SiO2‐coated substrates

B‐Y. Tsaur, John C. C. Fan, and M. W. Geis

Appl. Phys. Lett. 40, 322 (1982); http://dx.doi.org/10.1063/1.93077 (3 pages) | Cited 42 times

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Thermal stress is found to have a significant influence on the carrier mobilities in Si films prepared by zone melting recrystallization of polycrystalline Si on SiO2‐coated substrates. Films recrystallized on SiO2‐coated fused quartz substrates exhibit a large tensile stress, which enhances the electron mobility by ∼75% compared to the stress‐free Si films recrystallized on SiO2‐coated Si substrates. In contrast, Si films recrystallized on SiO2‐coated sapphire substrates are under a large compressive stress, which yields an increase of ∼10% in hole mobility compared to the stress‐free films.
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68.55.-a Thin film structure and morphology
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Cw Elemental semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

M. Quillec, C. Daguet, J. L. Benchimol, and H. Launois

Appl. Phys. Lett. 40, 325 (1982); http://dx.doi.org/10.1063/1.93078 (2 pages) | Cited 26 times

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A series of growths from the liquid phase have shown clearly that a large miscibility gap exists in the InxGa1−xAsyP1−y system at relatively high temperatures. The germinations were performed on (100) GaP. Using (100) InP as a substrate, it is shown that the lattice‐matched solids are stabilized. This result is believed to be associated with the strain energy induced by the substrate.
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81.10.Fq Growth from melts; zone melting and refining

High‐efficiency electrodeposited cadmium telluride solar cells

G. Fulop, M. Doty, P. Meyers, J. Betz, and C. H. Liu

Appl. Phys. Lett. 40, 327 (1982); http://dx.doi.org/10.1063/1.93085 (2 pages) | Cited 39 times

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We report on the development of a low‐cost, thin‐film electrodeposited cadmium telluride solar cell. The most efficient cell developed to date had an efficiency of 8.6% (under AM1 illumination), an open circuit voltage of 0.723 V, a short circuit current density of 18.7 mA/cm2, and a fill factor of 0.64. The cell uses a Schottky barrier rectifying junction at the front surface and a cadmium ohmic contact at the back. Passivation of the top surface improves the photovoltaic properties of the rectifying junction.
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84.60.Jt Photoelectric conversion
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.45.-h Electrochemistry and electrophoresis

Single phase polycrystalline metastable (GaSb)1−xGex alloys from annealing of amorphous mixtures: Ion mixing effects during deposition

K. C. Cadien and J. E. Greene

Appl. Phys. Lett. 40, 329 (1982); http://dx.doi.org/10.1063/1.93086 (3 pages) | Cited 7 times

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Low energy (<100 eV) Ar+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)1−xGex alloys. The films were ∼1.5 μm thick and the average grain size in the metastable state was ∼300 Å.
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64.60.My Metastable phases
61.80.Jh Ion radiation effects
81.15.Cd Deposition by sputtering
64.75.-g Phase equilibria

Low dark current GaAlAsSb photodiodes

R. Chin and C. M. Hill

Appl. Phys. Lett. 40, 332 (1982); http://dx.doi.org/10.1063/1.93087 (2 pages) | Cited 9 times

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GaAlAsSb heterostructure low leakage photodiodes have been fabricated. These devices exhibit leakage currents of 7 to 9 nA (25–35 μA/cm2) and capacitances of approximately 1 pF at 20‐V reverse bias. The devices are planar Be‐implanted structures and have a net donor concentration of 2×1015 cm−3 in Ga1−xAlxAsSb (x∼0.15).
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42.70.Gi Light-sensitive materials
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Multiply scanned electron beam annealing of Si implanted GaAs

M. Bujatti, A. Cetronio, R. Nipoti, and E. Olzi

Appl. Phys. Lett. 40, 334 (1982); http://dx.doi.org/10.1063/1.93088 (3 pages) | Cited 6 times

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Low dose implants of Si into semi‐insulating GaAs have been annealed by multiply scanned electron beam yielding 100% activation, without the compensation threshold characteristic of thermal annealing, and a high drift mobility of 4100 cm2/Vs for a carrier concentration of 1.6×1017 cm−3. Secondary‐ion mass spectroscopy analysis has revealed that the formation of a trough, depleted of Cr in correspondence with the implanted Si, is responsible for these results.
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72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation
81.40.Gh Other heat and thermomechanical treatments
41.75.Fr Electron and positron beams

Diffusivity of oxygen in silicon during steam oxidation

J. C. Mikkelsen

Appl. Phys. Lett. 40, 336 (1982); http://dx.doi.org/10.1063/1.93089 (2 pages) | Cited 122 times

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The diffusivity of oxygen in silicon during steam oxidation at 700–1240 °C was measured on as‐oxidized Si wafers. To provide greater analytical sensitivity 18O was introduced into the float‐zone Si wafers from 1‐atm H2 18O steam, and the 18O depth profiles were measured by Cs+ secondary ion mass spectrometry. Over the entire temperature range studied, the diffusivity is governed by a single activation energy, 2.44 eV, and the prefactor is 7×10−2 cm2 s−1. Our results are compared with previous literature values measured only at high temperature.
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66.30.J- Diffusion of impurities
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Observation of deep levels in Hg1−xCdxTe with optical modulation spectroscopy

D. L. Polla, R. L. Aggarwal, J. A. Mroczkowski, J. F. Shanley, and M. B. Reine

Appl. Phys. Lett. 40, 338 (1982); http://dx.doi.org/10.1063/1.93090 (3 pages) | Cited 13 times

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We have applied the technique of optical modulation spectroscopy to the narrow‐gap semiconductor Hg1−xCdxTe. This technique consists of measuring the change ΔIp in the transmitted intensity Ip of a tunable dc probe beam (with photon energy hωP<Eg ) due to a fixed‐wavelength chopped pump beam (with photon energy hωP≳Eg ). The ΔIp/Ip vs hωp spectra were measured for liquid phase epitaxial Hg1−xCdxTe samples at 94 K with x≅0.24–0.37. All spectra show three distinct peaks. The strongest peak occurs near Eg. The other two peaks are relatively sharp and occur below Eg. The energies of these two peaks are close to those of deep levels in Hg1−xCdxTe as recently determined by other techniques. This optical modulation technique, which is relatively simple, contactless, and nondestructive, may have significant potential for high‐sensitivity and high‐resolution study of deep levels in semiconductors.
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71.55.-i Impurity and defect levels
78.20.-e Optical properties of bulk materials and thin films
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Strong orientation dependence of the formation of surface stacking faults during oxidation of float‐zone silicon

J. Dieleman and T. H. G. Martens

Appl. Phys. Lett. 40, 340 (1982); http://dx.doi.org/10.1063/1.93091 (2 pages) | Cited 4 times

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See Also: Erratum

Show Abstract
The crystal orientation of float‐zone silicon has a huge effect on the number of oxidation‐induced stacking faults formed at the surface. Whereas 〈100〉 Si can be oxidized without formation of any stacking faults, the same oxidations introduce numerous stacking faults in 〈111〉 Si. These results are very different from those reported for Czochralski material.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

J. Lagowski, H. C. Gatos, J. M. Parsey, K. Wada, M. Kaminska, and W. Walukiewicz

Appl. Phys. Lett. 40, 342 (1982); http://dx.doi.org/10.1063/1.93092 (3 pages) | Cited 188 times

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The concentration of the major electron trap (0.82 eV below the conduction band) in GaAs (Bridgman grown) was found to increase with increasing As pressure during growth. It was further found that (for a given As pressure) the concentration of this trap decreased with increasing concentration of shallow donor dopants (Si, Se, and Te). Donor concentrations above a threshold of about 1017 cm−3 led to the rapid elimination of the trap. On the basis of these findings, the 0.82‐eV trap was attributed to the antisite defect AsGa formed during the postgrowth cooling of the crystals.
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78.40.Fy Semiconductors
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.J- Point defects and defect clusters
82.60.Hc Chemical equilibria and equilibrium constants

Shallow N acceptor in N+‐implanted ZnSe

Z. L. Wu, J. L. Merz, C. J. Werkhoven, B. J. Fitzpatrick, and R. N. Bhargava

Appl. Phys. Lett. 40, 345 (1982); http://dx.doi.org/10.1063/1.93093 (2 pages) | Cited 23 times

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A new bound exciton line IN1 at 2.7916 eV and its longitudinal phonon replicas have been observed in N+‐ion‐implanted ZnSe. Compared with the data of unimplanted samples, the pair bands are more intense and shift towards high energy by about 13 meV. These results provide confirmation that nitrogen is incorporated into ZnSe as a shallow acceptor.
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61.72.U- Doping and impurity implantation
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.55.Hx Other solid inorganic materials

Electron irradiation effects in lead‐alloy Josephson junctions

Y. H. Lee and P. R. Brosious

Appl. Phys. Lett. 40, 347 (1982); http://dx.doi.org/10.1063/1.93094 (3 pages) | Cited 1 time

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Electron irradiation was performed on lead‐alloy Josephson junctions with incident electron energies of 15 keV to 3.0 MeV. The quasi‐particle tunneling current was observed to increase, proportional to the electron fluence over the range (1015∼1018 electrons/cm2). Radiation effects at low energy (⩽30 keV) clearly indicate that radiation‐induced point defects within the tunnel barrier are responsible for changes in both the tunneling current and the annealing characteristics of junctions.
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74.50.+r Tunneling phenomena; Josephson effects
61.80.Fe Electron and positron radiation effects
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