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1 Mar 1982

Volume 40, Issue 5, pp. 359-442

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Multiple electrode system for high power CO2 laser excitation

J. E. Harry and S. N. Saleh

Appl. Phys. Lett. 40, 359 (1982); http://dx.doi.org/10.1063/1.93283 (3 pages) | Cited 4 times

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A multiple electric discharge using six pairs of electrodes to obtain a uniform volume of ionized gas suitable for the excitation of a cw CO2 laser is described. Two methods of connection are investigated; parallel in which the current in adjacent discharges is in the same direction and antiparallel in which current flow in adjacent discharges is opposed. An input power density of the order of 4.18×104 W/l/atm was obtained which is of the order of twice that obtainable with a conventional axial discharge system. The results are applicable to axial excitation lasers (parallel) and transverse excitation (antiparallel).
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

High quality transparent heat reflectors of reactively evaporated indium tin oxide

I. Hamberg, A. Hjortsberg, and C. G. Granqvist

Appl. Phys. Lett. 40, 362 (1982); http://dx.doi.org/10.1063/1.93103 (3 pages) | Cited 37 times

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Transparent and heat reflecting indium tin oxide films were prepared by electron beam evaporation of In2O3+9 mol.% SnO2 onto glass in an oxygen atmosphere of ∼5×10−4 Torr. Visible light absorption less than 2%, thermal infrared reflectance exceeding 90%, and a dc resistivity of ∼3×10−4 Ω cm were obtained for 0.3‐μm‐thick films deposited on a substrate at 300 °C. Similar properties could be achieved with substrate temperatures as low as 150 °C. By antireflection coating the films with an MgF2 layer, the visible transmittance exceeded the transmittance of the uncoated glass while the infrared reflectance was practically unchanged.
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78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Refractive index of vinylidene fluoride‐trifluoroethylene copolymer

Takeshi Yamada and Takashi Kurokawa

Appl. Phys. Lett. 40, 364 (1982); http://dx.doi.org/10.1063/1.93104 (3 pages) | Cited 2 times

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The refractive indices of the ferroelectric vinylidene fluoride‐trifluoroethylene copolymer have been investigated. The copolymer reveals birefringence in all its composition ranges. Birefringence of the copolymer film is observed even at higher temperatures than the Curie temperature. The noticeable decrease of the refractive indices at around the Curie temperature is caused by a change of the density.
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77.80.B- Phase transitions and Curie point
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Fm Birefringence

GYROFEL—a hybrid electron synchrotron laser

Neil C. Schoen

Appl. Phys. Lett. 40, 366 (1982); http://dx.doi.org/10.1063/1.93105 (3 pages) | Cited 1 time

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A potential new mode of operation of an electron synchrotron radiation device is described, representing a unification of concepts encompassing gyrotron and free‐electron laser devices. The GYROFEL configuration utilizes the predicted axial or longitudinal electron beam bunching to allow enhancement of forward‐directed, Doppler‐shifted synchrotron radiation, provided that appropriate electron beam/wave velocity synchronism occurs. Computer simulations and preliminary experimental data are presented in support of this microwave laser concept.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
41.75.Fr Electron and positron beams
84.30.Ng Oscillators, pulse generators, and function generators
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Interaction of a bistable injection laser with an external optical cavity

K. Y. Lau, Ch. Harder, and A. Yariv

Appl. Phys. Lett. 40, 369 (1982); http://dx.doi.org/10.1063/1.93106 (3 pages) | Cited 10 times

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Experimental results on interactions of a bistable laser with an external optical cavity are presented. Switching of a bistable injection laser can be done by varying the amount of optical feedback. The optical switching is accompanied by a switching of the voltage across the absorber section. This can be utilized in digital optical disk readout. A bistable laser with an antireflection coating on one facet is more suitable for this task. No pulsations can be observed in a bistable laser with optical feedback if the absorber section is biased with a constant current source; but when it is biased with a voltage source, pulsation occurs at the external cavity round trip frequency. This indicates that even though the intrinsic absorption of the semiconductor material does not saturate easier than the gain, the presence of such absorptions in GaAs lasers can still produce pulsations when the electrical aspect is taken into account.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Visible GaAlAs V‐channeled substrate inner stripe laser with stabilized mode using p‐GaAs substrate

S. Yamamoto, H. Hayashi, S. Yano, T. Sakurai, and T. Hijikata

Appl. Phys. Lett. 40, 372 (1982); http://dx.doi.org/10.1063/1.93107 (3 pages) | Cited 35 times

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A new visible laser, the V channeled substrate inner stripe laser, is developed. This laser can internally confine the current into the V‐channel by using a thin n‐GaAs layer grown on the p‐GaAs substrate. cw threshold currents were 35–45 mA in the visible spectral range of 770–790 nm. And highly stable transverse and single longitudinal mode operation were observed because the built‐in optical waveguide was formed within the V channel.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
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Effective deep ultraviolet photoetching of polymethyl methacrylate by an excimer laser

Y. Kawamura, K. Toyoda, and S. Namba

Appl. Phys. Lett. 40, 374 (1982); http://dx.doi.org/10.1063/1.93108 (2 pages) | Cited 122 times

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Photoetching of polymethyl methacrylate (PMMA) for pulsed high power UV light is demonstrated. As a high power UV light source, a KrF excimer laser was used. Etching depth obtained by deep UV light irradiation has not only energy dependence, but also power dependence. It increased abruptly by increasing the exposed power density for the same exposed energy density.These experimental results show that high power excimer lasers are the effective light source for UV photoetching of PMMA.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
61.80.-x Physical radiation effects, radiation damage

Nanosecond infrared laser stimulation of luminescence in rare‐earth doped sulfides

J. Gasiot, P. Bräunlich, and J. P. Fillard

Appl. Phys. Lett. 40, 376 (1982); http://dx.doi.org/10.1063/1.93102 (3 pages) | Cited 26 times

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Optically stimulated luminescence (OSL) from CaS:Eu,Sm and SrS:Eu,Sm phosphors, previously exposed to ionizing radiation, is shown to occur with response and decay times of less than 50‐ns full width at half‐maximum. This result indicates that fast high‐resolution OSL imaging of spatial dose distributions is possible via stimulation of the dose proportional luminescence with a tightly focused scanning laser beam. The two phosphors investigated are efficiently stimulated with the beam from a Nd:yttrium aluminum garnet (YAG) laser. The large dynamic dose range of these materials represents a distinct advantage of OSL imaging over conventional x‐ray radiography. In addition, the laser scanning technique readily lends itself to image digitalization and processing. Real‐time imaging appears feasible.
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78.55.Hx Other solid inorganic materials
78.60.Kn Thermoluminescence
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

The true area of contact at a liquid metal‐solid interface

R. S. Timsit

Appl. Phys. Lett. 40, 379 (1982); http://dx.doi.org/10.1063/1.93109 (3 pages) | Cited 8 times

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The properties of a liquid‐solid interface are usually understood under the assumption that contact is continuous over the entire interface, regardless of the surface roughness of the solid. This letter presents results of an analysis which suggest that this assumption is not valid when the liquid is a metal characterized by weak adhesion to the solid. Under these conditions the true area of contact at the interface depends on the surface microtopology of the solid and may differ considerably from the area of nominal contact. Experimental evidence in support of these conclusions is presented.
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68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Spheres of the metallic glass Au55Pb22.5Sb22.5 and their surface characteristics

Mark C. Lee, James M. Kendall, and William L. Johnson

Appl. Phys. Lett. 40, 382 (1982); http://dx.doi.org/10.1063/1.93110 (3 pages) | Cited 29 times

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Spheres of the metallic glass Au55 Pb22.5 Sb22.5 have been formed up to a size of approximately 1.5 mm in diameter. X‐ray diffraction was used to establish the glassy nature of the samples and to provide evidence of two phase‐separated glass regions. Scanning electron microscopy provided a direct visual observation of the two‐phase amorphous network on the surface of the sphere. The physical dimensions of the phase‐separated regions were observed to be cooling‐rate sensitive. Energy dispersive spectroscopy indicated that the compositions of these two glassy phases were Au‐rich and Pb‐rich, respectively, confirming the results of Kim and Johnson. In addition, the spheres exhibited an unusual surface smoothness of better than ±250 Å.
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81.05.Bx Metals, semimetals, and alloys
81.05.Kf Glasses (including metallic glasses)
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Confinement of laser‐generated carriers in semiconductors by induced lattice temperature gradients

H. M. van Driel, J. S. Preston, and M. I. Gallant

Appl. Phys. Lett. 40, 385 (1982); http://dx.doi.org/10.1063/1.93111 (3 pages) | Cited 10 times

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The generation of large carrier densities in semiconductors by pulsed laser excitation can be accompanied by a large lattice temperature gradient near the surface. We formulate the coupled transport equations which describe the evolution in space and time of the carrier density and the carrier/lattice temperature below the melting point. A large temperature gradient is seen to influence the diffusion of carriers through the thermoelectric effect (which enhances diffusion) and energy band‐gap gradients (which in most materials counteract diffusion). For high laser intensities we conclude that the latter effect dominates, leading to a region of carrier confinement and enhanced lattice heating near the surface.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
79.20.Ds Laser-beam impact phenomena

Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization

R. F. Pinizzotto, H. W. Lam, and B. L. Vaandrager

Appl. Phys. Lett. 40, 388 (1982); http://dx.doi.org/10.1063/1.93112 (3 pages) | Cited 27 times

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A detailed microstructural analysis of laterally seeded silicon‐on‐oxide formed by scanning graphite strip heater recrystallization is presented for the first time. The recrystallized top silicon layer has a (100) orientation, but contains many subgrain boundaries formed by dislocation coalescence. The subgrains are misoriented by <0.3° and have no internal defects. β‐SiC contamination of the top silicon layer was detected. It is probably due to particulate contamination from the top graphite strip heater.
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81.10.Fq Growth from melts; zone melting and refining
81.30.Fb Solidification
85.30.De Semiconductor-device characterization, design, and modeling
61.72.Mm Grain and twin boundaries

Localized laser etching of compound semiconductors in aqueous solution

R. M. Osgood, A. Sanchez‐Rubio, D. J. Ehrlich, and V. Daneu

Appl. Phys. Lett. 40, 391 (1982); http://dx.doi.org/10.1063/1.93113 (3 pages) | Cited 47 times

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A laser‐based technique for rapid, anisotropic etching of compound semiconductors is described. Both holes for through‐wafer vias and high‐resolution diffraction gratings have been made with the process.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Recrystallization of Si on amorphous substrates by doughnut‐shaped cw Ar laser beam

S. Kawamura, J. Sakurai, M. Nakano, and M. Takagi

Appl. Phys. Lett. 40, 394 (1982); http://dx.doi.org/10.1063/1.93114 (2 pages) | Cited 31 times

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Continuous single‐crystal Si films longer than 600 μm over SiO2 have been produced with or without lateral epitaxial growth from bulk silicon seed by changing the mode structure of the cw Ar laser beam. The thermal profile of the laser spot is controlled by using a doughnut‐shaped beam instead of usual Gaussian one to suppress competitive nucleation from side edges of the molten zone. The result indicates that the liquid‐solid interface line profile is the most essential limiting parameter on the mechanism of regrowth.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
79.20.Ds Laser-beam impact phenomena

Current induced trap generation in SiO2

A. Badihi, B. Eitan, I. Cohen, and J. Shappir

Appl. Phys. Lett. 40, 396 (1982); http://dx.doi.org/10.1063/1.93115 (3 pages) | Cited 31 times

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Trap generation in the gate oxide of metal‐oxide‐semiconductor structure is studied in this work. It is shown that the application of a field of several MV/cm across the oxide together with electron injection into the oxide results in trap generation, while application of high electric field without electron injection or injection in low electric field does not generate traps. The density of the generated traps is shown to be linearly dependent on the total charge flowing through the oxide and exponentially dependent on the oxide field. For prolonged injection with high oxide field, the trap generation leads to oxide breakdown.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Very low resistance ohmic contacts on p‐type InP by direct plating

K. Tabatabaie‐Alavi, A. N. M. M. Choudhury, N. J. Slater, and C. G. Fonstad

Appl. Phys. Lett. 40, 398 (1982); http://dx.doi.org/10.1063/1.93116 (3 pages) | Cited 10 times

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Very low resistance ohmic contacts (ρc ≃4×10−5 Ω cm2) have been formed on p‐type InP by light assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, is suitable for producing patterned, small care contacts on device structures and is compatible with established n‐type ohmic contacting procedures.
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73.40.Cg Contact resistance, contact potential
72.80.Ey III-V and II-VI semiconductors
82.45.-h Electrochemistry and electrophoresis

Quasi‐Schottky barrier diode on n‐Ga0.47In0.53As using a fully depleted p+‐Ga0.47In0.53As layer grown by molecular beam epitaxy

C. Y. Chen, A. Y. Cho, K. Y. Cheng, and P. A. Garbinski

Appl. Phys. Lett. 40, 401 (1982); http://dx.doi.org/10.1063/1.93117 (3 pages) | Cited 7 times

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A quasi‐Schottky barrier diode made on n‐Ga0.47In0.53 As has been demonstrated. This device utilizes a fully depleted ultrathin p+‐Ga0.47In0.53 As layer grown by molecular beam epitaxy to increase the barrier height. An increase in the barrier height of 0.27 V, making the total barrier height 0.47 V, has been obtained. A low reverse leakage current and a hysteresis‐free capacitance‐voltage characteristic suggest that this structure should be useful as a current control gate for high speed field‐effect transistors.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
85.30.Tv Field effect devices

Collection length of holes in a‐Si:H by surface photovoltage using a liquid Schottky barrier

Arnold R. Moore

Appl. Phys. Lett. 40, 403 (1982); http://dx.doi.org/10.1063/1.93118 (3 pages) | Cited 30 times

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In a surface photovoltage determination of the collection length of holes in undoped amorphous Si:H, the ac surface photovoltage has been picked up by the use of a liquid Schottky barrier. The redox couple quinone‐hydroquinone proved the best liquid. Simultaneous illumination with a bias light of up to 1 sun removes most of the internal barrier field allowing measurement of the ambipolar diffusion length. Values in the range 0.01–0.8 μm are found depending on the conditions of sample preparation.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Mr Semiconductor-electrolyte contacts
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

A proposal and numerical simulation of N+NN+ Schottky device for ballistic and quasiballistic electron spectroscopy

P. Hesto, J‐F. Pone, and R. Castagne

Appl. Phys. Lett. 40, 405 (1982); http://dx.doi.org/10.1063/1.93119 (2 pages) | Cited 9 times

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A new structure is proposed for the spectroscopy of ballistic or quasiballistic electrons in GaAs submicronic N+NN+ device. A theoretical study based on a Monte Carlo simulation is presented in order to prepare an experimental study.
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72.80.Ey III-V and II-VI semiconductors
72.20.Ht High-field and nonlinear effects

Prediction of negative diffusivity under transient regime conditions

B. Boittiaux, E. Constant, L. Reggiani, R. Brunetti, and C. Jacoboni

Appl. Phys. Lett. 40, 407 (1982); http://dx.doi.org/10.1063/1.93120 (3 pages) | Cited 3 times

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We report on the possibility of a negative diffusivity under transient regime conditions. This effect is predicted by Monte Carlo calculations in polar semiconductors undergoing Gunn effect.
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72.20.Ht High-field and nonlinear effects
72.70.+m Noise processes and phenomena
72.80.Cw Elemental semiconductors

Photocurrent onset potential and flatband potential of a p‐type GaP semiconducting photoelectrode

G. Horowitz

Appl. Phys. Lett. 40, 409 (1982); http://dx.doi.org/10.1063/1.93121 (3 pages) | Cited 3 times

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A discrepancy between the photocurrent onset potential and the flatband potential derived from capacitance voltage measurements has been observed on p‐type GaP semiconducting photoelectrodes. This discrepancy has been attributed previously by Butler and Ginley to a localized state acting as a recombination center. It is demonstrated that the experimental current‐voltage characteristic can be fitted to a curve calculated from a theoretical model that takes into account the rate limitation due to the charge transfer across the semiconductor‐electrolyte interface, and the recombinations in the space‐charge layer. The very low electron and hole transfer currents across the interface are attributed to the weak overlap between semiconductor bands and redox ion state densities.
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73.40.Mr Semiconductor-electrolyte contacts
72.40.+w Photoconduction and photovoltaic effects
82.45.-h Electrochemistry and electrophoresis
72.80.Ey III-V and II-VI semiconductors

Determination of the diffusing species and mechanism of diffusion during CrSi2 formation, using 31Si as a marker

A. P. Botha, R. Pretorius, and S. Kritzinger

Appl. Phys. Lett. 40, 412 (1982); http://dx.doi.org/10.1063/1.93122 (3 pages) | Cited 10 times

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Both the diffusing atomic species and its mechanism of diffusion have been directly determined during metal‐silicon interaction to form CrSi2. By using radioactive 31Si (half‐life = 2.62h) as a marker, it has been shown that silicon is the diffusing species during CrSi2 formation and that it diffuses by a substitutional (vacancy) mechanism. Complete intermixing of radioactive 31Si and nonradioactive silicon was found to take place throughout the silicide layer at its formation temperature, due to high substitutional (vacancy) self‐diffusion of silicon in CrSi2.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes

N. Tabatabaie, G. E. Stillman, R. Chin, and P. D. Dapkus

Appl. Phys. Lett. 40, 415 (1982); http://dx.doi.org/10.1063/1.93123 (3 pages) | Cited 16 times

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The reverse dark current of Ga0.8Al0.2AsySb1−y avalanche photodiodes was measured over a wide temperature range. The dark current at high voltages is dominated by a tunneling component which has been identified as defect tunneling because the tunneling energy is considerably less than the band‐gap energy. This identification is supported by the observation of a second tunneling component which becomes dominant at high electric fields.
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72.80.Ey III-V and II-VI semiconductors
73.40.Gk Tunneling
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
78.40.Fy Semiconductors

Quenched‐in defects in laser annealed silicon

Z. K. Fan, V. Q. Ho, and T. Sugano

Appl. Phys. Lett. 40, 418 (1982); http://dx.doi.org/10.1063/1.93124 (3 pages) | Cited 9 times

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The generation of defects in Si by pulsed laser irradiation was studied by deep level transient spectroscopy. For irradiation with pulsed ruby laser, three defect levels at Ec −0.25 eV, Ec −0.32 eV, and Ec −0.49 eV were observed. These defects, which generate large leakage current at Schottky diodes, are attributed to quenched‐in defects because their energy levels are very close to those generated by quenching‐in silicon wafer from a resistance heated furnace. However, they can be annealed out by a thermal annealing in nitrogen ambient at 600 °C.
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79.20.Ds Laser-beam impact phenomena
61.72.J- Point defects and defect clusters
81.10.Fq Growth from melts; zone melting and refining
78.40.Fy Semiconductors

Conversion of the conductivity mode in silicon by oxygen ion implantation and its application in a novel dielectric isolation technique

J. Y. Chi, R. P. Holmstrom, and B. Y. Mao

Appl. Phys. Lett. 40, 420 (1982); http://dx.doi.org/10.1063/1.93125 (3 pages) | Cited 3 times

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Implanted oxygen ions have been shown to form donor states and to change the conductivity mode in large regions of p‐type single‐crystal silicon after a 2‐h 450 °C anneal. These donor states are annihilated by a brief high‐temperature anneal. With a conventional oxide mask, this phenomenon has been used for the selective formation of low carrier concentration p‐type regions dielectrically isolated from a p‐type substrate by the full isolation by porous oxidized silicon technique.
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61.72.U- Doping and impurity implantation
72.20.Fr Low-field transport and mobility; piezoresistance
85.30.De Semiconductor-device characterization, design, and modeling
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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