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1 Mar 1982

Volume 40, Issue 5, pp. 359-442

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Measurement of the Γ‐L separation in Ga0.47In0.53As by ultraviolet photoemission

K. Y. Cheng, A. Y. Cho, S. B. Christman, T. P. Pearsall, and J. E. Rowe

Appl. Phys. Lett. 40, 423 (1982); http://dx.doi.org/10.1063/1.93126 (3 pages) | Cited 37 times

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We have studied the valence band of Ga0.47In0.53As by ultraviolet photoemission using photon energies of 11.7, 16.8, and 21.2 eV. The photo‐electron energy spectra show that the valence band of Ga0.47In0.53As has well‐defined structure similar to that of binary III‐V semiconductors. We have used these spectra to determine a conduction band Γ‐L separation of 0.55 eV at 300 K.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
78.20.Ls Magneto-optical effects

Schottky contacts on chemically etched p‐ and n‐type indium phosphide

E. Hökelek and G. Y. Robinson

Appl. Phys. Lett. 40, 426 (1982); http://dx.doi.org/10.1063/1.93101 (3 pages) | Cited 34 times

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The Schottky‐barrier energy ϕB for Al, Ni, Co, Pd, Au, and Ag contacts on chemically etched 〈100〉 surfaces of both p‐ and n‐type InP were measured and the metallurgical behavior of the contact structures were studied using Auger electron spectroscopy. ϕB was found to be a function of the chemical reactivity of the contact metal with the InP substrate. Extensive outdiffusion of In was observed in the Au and Ag contacts. The results indicate that the chemical effects at the metal‐semiconductor interface are a determining factor in the formation of InP Schottky barriers.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.40.Ei Rectification
73.40.Cg Contact resistance, contact potential

Ion‐induced physical and optical densification in obliquely deposited Se0.75Ge0.25 films

K. L. Chopra, K. Solomon Harshavardhan, S. Rajagopalan, and L. K. Malhotra

Appl. Phys. Lett. 40, 428 (1982); http://dx.doi.org/10.1063/1.93127 (3 pages) | Cited 15 times

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Irradiation of obliquely deposited films of Se0.75Ge0.25 with 50‐keV He+ ions produces enormous physical and optical densification. A thickness and hence volume contraction up to 39% accompanied by large changes (0.20 eV) in the band gap and refractive index (10.2%) have been observed. These changes are primarily due to the physical collapse of the low density columnar structure and associated electron‐phonon coupling. Such large changes have great potential applications in high resolution image storage, holography, and lithography.
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61.80.Jh Ion radiation effects

Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy

T. J. Drummond, R. Fischer, H. Morkoç, and P. Miller

Appl. Phys. Lett. 40, 430 (1982); http://dx.doi.org/10.1063/1.93096 (3 pages) | Cited 4 times

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Single‐period modulation‐doped Al0.3 Ga0.7 As/GaAs heterostructures were grown by molecular beam epitaxy in a substrate temperature range of 580–750 °C. Excellent surface morphologies were routinely obtained throughout the entire range of growth temperatures. Highest mobilities (in dark) obtained were 8000, 90 000, and 196 200 at 300, 78, and 10 K, respectively. In room light, these figures improved to 9000, 110 000, and 250 000 cm2/Vs. The sheet carrier concentration yielding the best electron mobility was about 8×1011 cm−2. While the mobilities did not depend on the substrate growth temperature between 600 and 675 °C, some degradation was observed above 675 and below 600 °C.
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72.20.Fr Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

An IR sensitive, real‐time imaging technique based on a photoelectrochemical cell

Ronald H. Micheels and R. David Rauh

Appl. Phys. Lett. 40, 433 (1982); http://dx.doi.org/10.1063/1.93097 (3 pages) | Cited 1 time

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A real‐time imaging technique based on optical saturation phenomena in photoelectrochemical cells has been developed. The long‐wavelength spectral sensitivity of these devices extends to the band‐gap energy of the semiconductor photoelectrode employed. An image resolution of 180 μ and a response time of better than 100 ms has been obtained with an n‐GaAs cell.
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73.40.Mr Semiconductor-electrolyte contacts
72.40.+w Photoconduction and photovoltaic effects

Closed system fabrication of Josephson tunnel junctions

G. K. Hohenwarter and J. E. Nordman

Appl. Phys. Lett. 40, 436 (1982); http://dx.doi.org/10.1063/1.93098 (2 pages) | Cited 3 times

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A technique for the fabrication of Josephson tunnel junctions without breaking vacuum and without the use of masks is presented. No chemical processing is done on either of the junction electrode surfaces. Hence, no chemical or reactive cleaning is required before the formation of the tunneling barrier. Nevertheless, standard photolithography and chemical or plasma etching can be employed for defining patterns. I‐V characteristics of Nb‐NbOx‐Pb junctions fabricated by this method have not exhibited a ’’knee’’ at the onset of the quasiparticle current.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
73.40.Rw Metal-insulator-metal structures

Optical probing technique for inhomogeneous superconducting films

C. C. Chi, M. M. T. Loy, and D. C. Cronemeyer

Appl. Phys. Lett. 40, 437 (1982); http://dx.doi.org/10.1063/1.93099 (3 pages) | Cited 17 times

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We report a nondestructive optical probing technique for superconducting films, by which a cross‐sectional gradient of the local transition temperature Tc and a two‐dimensional map of the local critical current Ic of an Al film were obtained. The two‐dimensional map clearly shows a variety of defects of the Al film. Some of them can be correlated to visible pinholes.
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74.78.-w Superconducting films and low-dimensional structures
74.25.-q Properties of superconductors
74.40.-n Fluctuation phenomena
81.70.-q Methods of materials testing and analysis

The hydrodynamics of liquid metal ion sources

A. Wagner

Appl. Phys. Lett. 40, 440 (1982); http://dx.doi.org/10.1063/1.93100 (3 pages) | Cited 22 times

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Factors affecting the current‐voltage characteristics of liquid metal ion sources are reviewed. The results demonstrate that ion emission is not controlled by space‐charge effects but rather is determined by liquid flow limitations along the needle emitter. A hydrodynamic model is presented which predicts the experimental I‐V characteristics. The model suggests that a reduction in the energy spread (Boersch Effect) of the emitted ions may be achieved by increasing the needle flow impedance.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
79.70.+q Field emission, ionization, evaporation, and desorption
68.15.+e Liquid thin films
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