APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Mar 1982

Volume 40, Issue 6, pp. 447-542

Page 1 of 2 Pages Next Page | Jump to Page

Picosecond InP optoelectronic switches

A. G. Foyt, F. J. Leonberger, and R. C. Williamson

Appl. Phys. Lett. 40, 447 (1982); http://dx.doi.org/10.1063/1.93143 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
Proton bombardment is used to increase the response speed of InP optoelectronic switches. Photoconductivity measurements indicate response times following bombardment of <100 ps, with the electron mobility estimated to be ⩾600 cm2/Vs. This mobility is over an order of magnitude larger than that observed in similar high‐resistivity devices of comparable speed fabricated in germanium or silicon‐on‐sapphire.
Show PACS
85.60.-q Optoelectronic devices
72.80.Ey III-V and II-VI semiconductors

Coherent oscillation by self‐induced gratings in the photorefractive crystal BaTiO3

Jeffrey O. White, Mark Cronin‐Golomb, Baruch Fischer, and Amnon Yariv

Appl. Phys. Lett. 40, 450 (1982); http://dx.doi.org/10.1063/1.93144 (3 pages) | Cited 102 times

Full Text: | Download PDF

Show Abstract
We report here the demonstration of several new optical oscillator configurations including a unidirectional ring oscillator and a self‐pumped phase conjugate mirror. The gain medium is BaTiO3, pumped by a 632.8‐nm He‐Ne laser at power levels down to 50 μW.
Show PACS
42.65.-k Nonlinear optics
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Effect of superluminescence on the modulation response of semiconductor lasers

Kam Y. Lau and Amnon Yariv

Appl. Phys. Lett. 40, 452 (1982); http://dx.doi.org/10.1063/1.93145 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The small‐signal modulation response of semiconductor lasers with a very small mirror reflectivity is analyzed. Superluminescent effects inside the laser cavity provide yet another mechanism for damping relaxation oscillation resonance. These results can serve as useful guides in designing high frequency semiconductor lasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Radiometric levitation of micron sized spheres

M. Lewittes, S. Arnold, and G. Oster

Appl. Phys. Lett. 40, 455 (1982); http://dx.doi.org/10.1063/1.93146 (3 pages) | Cited 32 times

Full Text: | Download PDF

Show Abstract
Radiometric levitation of a 20‐μ‐diam dye‐impregnated glycerol sphere has been observed at intensities as low as ∼1 W/cm2 in air at 30 Torr. The levitation has been effected on both strongly absorbing spheres in the direction of the light and weakly absorbing spheres in the opposite sense. Both strongly and weakly absorbing spheres are found to laterally seek an intensity minimum. Consequently particles were stably held in the focused beam of an Ar+ laser (4880 Å) operating in the TEM∗01 (doughnut) mode.
Show PACS
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

Difference‐frequency variation of the free‐carrier‐induced, third‐order nonlinear susceptibility in n‐InSb

S. Y. Yuen and P. A. Wolff

Appl. Phys. Lett. 40, 457 (1982); http://dx.doi.org/10.1063/1.93147 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
Free‐carrier‐induced optical nonlinearities were studied, via four‐wave mixing, in n‐InSb as a function of the frequency difference Δω, between two CO2 laser beams. The third‐order nonlinear susceptibility increases by more than an order of magnitude as Δω→0. This effect is ascribed to electron temperature fluctuations produced by the nonlinear optical interactions. An energy relaxation time of 3–4 ps is inferred for the highly excited electron gas. Studies of the frequency dependence of the nonlinear susceptibility may provide a new technique for measuring fast relaxation times in semiconductors.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Gas‐puff Z pinches with D2 and D2‐Ar mixtures

J. Bailey, Y. Ettinger, A. Fisher, and N. Rostoker

Appl. Phys. Lett. 40, 460 (1982); http://dx.doi.org/10.1063/1.93148 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
Results obtained with the University of California, Irvine gas‐puff Z‐pinch experiment are described for deuterium and deuterium‐argon mixtures. This experiment utilizes a hollow cylindrical gas puff injected between electrodes driven by a 4.8‐kJ capacitor bank. Various gas compositions have been tested, including pure deuterium, 90% D2‐10% Ar, and up to 10% D2‐90% Ar. We have observed the stages of collapse and its rate, electron density at the pinch, neutron yield, and the time dependence of x‐ray and neutron emission. When a 90% D2‐10% Ar mixture is injected, the plasma annulus is observed to separate into two columns which implode concentrically.
Show PACS
52.55.Ez Theta pinch

Shock dynamics and neutron production in an explosive generator driven dense plasma focus

Irvin R. Lindemuth and Bruce L. Freeman

Appl. Phys. Lett. 40, 462 (1982); http://dx.doi.org/10.1063/1.93149 (4 pages)

Full Text: | Download PDF

Show Abstract
An explosive generator driven dense plasma focus is simulated numerically using a magnetohydrodynamic model which includes thermal conduction, resistive diffusion, and radiation in addition to the Lorentz force and shock hydrodynamics. It is shown that the dominant heating mechanism is shock heating. Neutron yield is shown to occur at the current minimum. The neutron yield is a result of the initial shock reflecting off the axis of symmetry, reflecting off the magnetic piston driving the focus, and reconverging on axis. Peak neutron production occurs when post‐shock plasma converges on axis.
Show PACS
52.65.-y Plasma simulation
52.30.-q Plasma dynamics and flow
52.55.Ez Theta pinch
52.35.Tc Shock waves and discontinuities

Bragg condition in absorbing x‐ray multilayers

Alan E. Rosenbluth and Ping Lee

Appl. Phys. Lett. 40, 466 (1982); http://dx.doi.org/10.1063/1.93150 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
The angle of maximum reflectivity from a multilayer x‐ray reflector is influenced by absorption in the medium. Using multilayer theory we show how the full refractive correction compares to the usual correction that includes only the effect of dispersion. The physical significance of the two corrections is discussed. The absorption correction is computed for some multilayer systems of current interest.
Show PACS
78.70.Ck X-ray scattering
78.70.Dm X-ray absorption spectra

Laser crystallization of Si films on glass

R. A. Lemons, M. A. Bosch, A. H. Dayem, J. K. Grogan, and P. M. Mankiewich

Appl. Phys. Lett. 40, 469 (1982); http://dx.doi.org/10.1063/1.93137 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
By using glass substrates which approximate the thermal expansion of a deposited Si film, thermal stress cracking during laser crystallization is eliminated. Results on three types of transparent silicate glass are reported. Chemical vapor deposition is used to coat these substrates first with a buffer layer of SiO2 or Si3N4 and then with a Si film. When the Si films are melted with an argon ion laser beam, large crystal grains are produced. Secondary ion mass spectroscopy is used to determine the effectiveness of the buffer layer in isolating the Si from impurities in the glass.
Show PACS
68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining

Electron tunneling through GaAs grain boundaries

C. H. Seager and G. E. Pike

Appl. Phys. Lett. 40, 471 (1982); http://dx.doi.org/10.1063/1.93138 (4 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
Measurements of the zero‐bias dc conductance G0 and high frequency capacitance have been made on GaAs bicrystals doped in the range of 4×1017–2×1018 cm−3. The conductance displays a non‐Arrhenius temperature dependence with high temperature values of ∂(ln G0)/∂(1/kT) less than the barrier heights deduced from the capacitance. Theoretical calculations of transbarrier currents using the unified approach of Fonash show that thermally assisted tunneling currents are important.
Show PACS
72.80.Ey III-V and II-VI semiconductors
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous silicon

D. V. Lang, J. D. Cohen, J. P. Harbison, and A. M. Sergent

Appl. Phys. Lett. 40, 474 (1982); http://dx.doi.org/10.1063/1.93139 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
We have observed a reversible photoinduced modification of the bulk density of gap states in a‐Si:H associated with the Staebler–Wronski effect. A detailed numerical analysis of diode admittance and deep level transient spectroscopy measurements shows that the changes in these properties after illumination can be explained by a lowering of the bulk Fermi level and an increase in the density of states below midgap.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors

61Ni Mössbauer measurements of nickel microprecipitates produced in LaNi5 by cyclic hydrogen absorption and desorption

H. Rummel, R. L. Cohen, P. Gutlich, and K. W. West

Appl. Phys. Lett. 40, 477 (1982); http://dx.doi.org/10.1063/1.93140 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The hydrogen storage material LaNi5 has previously been shown to degrade into LaH2 and (presumably) Ni metal on repeated absorption and desorption of hydrogen. 61Ni Mössbauer measurements show directly the presence of nickel microprecipitates in severely degraded material.
Show PACS
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
76.80.+y Mössbauer effect; other γ-ray spectroscopy
81.30.Mh Solid-phase precipitation

Interfacial electronic structure and density of states of intrinsic a‐Si:H deposited on clean and oxidized stainless steel

Paul Nielsen and Robert Gredin

Appl. Phys. Lett. 40, 479 (1982); http://dx.doi.org/10.1063/1.93141 (4 pages)

Full Text: | Download PDF

Show Abstract
Photoemission and Auger measurements on thin a‐Si:H films prepared in situ have revealed the presence of an interfacial potential step of 0.3 eV between clean stainless steel and a‐Si:H, and 0.5 eV between oxidized stainless steel and a‐Si:H. A small shift in the valence‐band maximum (VBM) as the thickness of the a‐Si:H is increased, if interpreted as band bending, gives an upper limit for the bulk density of states of about 7×1018 states cm−3 eV−1. Direct measurement of the optical density of states reveals less than 1019 states cm−3 eV−1 at energies more than 0.30 eV above the VBM.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.-c Electronic transport in interface structures
81.65.-b Surface treatments

Mechanism of ion dechanneling in compound semiconductor superlattices

John H. Barrett

Appl. Phys. Lett. 40, 482 (1982); http://dx.doi.org/10.1063/1.93142 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Computer simulations of channeling have been used to evaluate a model proposed by Saris et al. to explain some of their ion dechanneling measurements in InAs‐GaSb superlattices. Their model, which involves slight offsets of atomic rows at each interface, produces much less dechanneling than observed experimentally. However, the simulations show that the observed dechanneling can be produced by much larger offsets which would probably be spread over several atomic layers near each interface.
Show PACS
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Fermi level pinning at metal‐CdTe interfaces

R. H. Williams and M. H. Patterson

Appl. Phys. Lett. 40, 484 (1982); http://dx.doi.org/10.1063/1.93151 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Schottky barrier formation has been studied for a range of metals on vacuum cleaved CdTe surfaces, using a multi technique approach. Provided one eliminates the situation of cadmium outdiffusion into high work function metals from the analysis, then the data are far closer to the Schottky limit than previously reported. The influence of defects is discussed in the light of recent data relating to Au‐Cd alloy contacts.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures

Calculation of capacitance‐voltage characteristics of hydrogenated amorphous silicon Schottky diodes

Inan Chen and Sanboh Lee

Appl. Phys. Lett. 40, 487 (1982); http://dx.doi.org/10.1063/1.93152 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
By adopting a new boundary condition appropriate to hydrogenated amorphous silicon diodes, and using the nonequilibrium Fermi–Dirac statistics, we predict a low‐frequency capacitance‐voltage relation which is quite different from that obtained by previous calculations in the literature, while in good agreement with more recent experimental results. The physical reasons for the differences are discussed.
Show PACS
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Sx Metal-semiconductor-metal structures
72.40.+w Photoconduction and photovoltaic effects

Voltage and frequency dependence of simulated rf plasma annealing in metal‐SiO2‐Si structures

M. R. Chin and T. P. Ma

Appl. Phys. Lett. 40, 490 (1982); http://dx.doi.org/10.1063/1.93153 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
In a simulation experiment the rf plasma annealing rate of the positive oxide charge in metal‐SiO2‐Si structures has been found to be a function of the amplitude and frequency of the ac voltage. In the range studied (0.4–8 V, 10 Hz–10 MHz), the rate increases with both the amplitude and the frequency until saturation is reached near the upper figures. For frequencies above 100 kHz, an enhanced annealing rate (compared with the pure thermal annealing) is observed even at an rf voltage as low as 0.4 V. Similarly, for voltages above 4 V, an enhanced annealing rate is observed at a frequency as low as 100 Hz. A simple theory based on the first‐order trapping‐recombination kinetics in the context of the recombination enhanced defect reactions model has been developed to explain the experimental results.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Cb X-ray effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Demonstration of a new oscillator based on real‐space transfer in heterojunctions

Paul D. Coleman, Jay Freeman, H. Morkoç, K. Hess, B. Streetman, and M. Keever

Appl. Phys. Lett. 40, 493 (1982); http://dx.doi.org/10.1063/1.93154 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
A new real‐space transfer oscillator is demonstrated in a layered GaAs/nAlGaAs heterojunction. A dc bias field, plus the ac oscillating field, is applied parallel to the layer interfaces to modulate the electron transfer from the GaAs layers to the nAlGaAs layers. This periodic electron transfer results in the ac current being 180° out of phase with the ac voltage and power being generated. A unique characteristic of this oscillator is that the electron transit times are associated with transverse dimensions and not dimensions between the ohmic contacts which should permit its extension to very high frequencies.
Show PACS
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Origin and elimination of defects in SiO2 thermally grown on Czochralski silicon substrate

Manabu Itsumi and Fumio Kiyosumi

Appl. Phys. Lett. 40, 496 (1982); http://dx.doi.org/10.1063/1.93155 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Oxide defect density for Czochralski Si (CZ‐Si) substrates is found to be nearly one order of magnitude larger than that for float‐zone Si (FZ‐Si) substrates. The oxide defect density for CZ‐Si substrates, subjected to an additional sacrifice oxidation, followed by etchback of the resultant oxides, is found to agree with that for FZ‐Si substrates subjected to no special treatment. The origin of the oxide defects for CZ‐Si is inferred to be metallic impurities originating from the substrates.
Show PACS
73.61.Ng Insulators
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology

Depth profiling of metal oxides using Raman spectroscopy with ion bombardment

J. C. Hamilton, B. E. Mills, and R. E. Benner

Appl. Phys. Lett. 40, 499 (1982); http://dx.doi.org/10.1063/1.93156 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Raman spectroscopy has been combined with ion bombardment to obtain chemical compound identification as a function of depth in films containing Fe2O3. Experiments were performed using Fe2O3 single crystals, oxidized iron foil, and oxidized stainless steel. Low sensitivity to sputter induced chemical changes is a major advantage of the technique, allowing reliable chemical profiles to be obtained for these thin‐film oxides.
Show PACS
81.05.Bx Metals, semimetals, and alloys
78.30.Hv Other nonmetallic inorganics
61.80.Jh Ion radiation effects

Dose dependence of epitaxial regrowth of Se‐implanted GaAs

R. S. Bhattacharya, P. P. Pronko, S. C. Ling, and S. R. Wilson

Appl. Phys. Lett. 40, 502 (1982); http://dx.doi.org/10.1063/1.93157 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
High resolution Rutherford backscattering and channeling measurements have been used to investigate the annealing behavior of Se‐implanted GaAs layers. The dose dependence of the as‐implanted damage and residual disorder after annealing at 400 °C has been examined. Results show that the residual disorder increases rather sharply at a dose just above that required to amorphize the surface layer and then reaches a saturation level. Once the saturation level is reached, the residual disorder is dependent almost linearly on the thickness of the amorphous layer.
Show PACS
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Hot‐carrier relaxation in p‐In0.53Ga0.47As

Jagdeep Shah, R. E. Nahory, R. F. Leheny, J. Degani, and A. E. DiGiovanni

Appl. Phys. Lett. 40, 505 (1982); http://dx.doi.org/10.1063/1.93158 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Experimental results demonstrate that photoinduced carrier heating in In0.53Ga0.47As is substantially reduced in the presence of a large background population of holes. These results are interpreted in terms of the increased effective coupling of carriers to the lattice in the presence of background holes.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Characterization of high purity GaAs grown by molecular beam epitaxy

R. Dingle, C. Weisbuch, H. L. Störmer, H. Morkoç, and A. Y. Cho

Appl. Phys. Lett. 40, 507 (1982); http://dx.doi.org/10.1063/1.93159 (4 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
High purity n‐type GaAs grown by molecular beam epitaxy has been characterized using the Hall effect, dye laser excited low‐temperature luminescence, and far‐infrared magnetospectroscopy. Peak mobilities exceed 105 cm2 V−1 s−1. Carbon is shown to be the dominant background acceptor impurity, whereas silicon and two additional, unidentified donors make up the background donor manifold.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

GaAs/AlxGa1−xAs depletion stop phototransistor grown by molecular beam epitaxy

C. Y. Chen, A. Y. Cho, P. A. Garbinski, and C. G. Bethea

Appl. Phys. Lett. 40, 510 (1982); http://dx.doi.org/10.1063/1.93160 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We introduce a simple but useful concept of depletion stop and demonstrate a phototransistor that makes use of this idea. This depletion stop phototransistor is grown by molecular beam epitaxy on GaAs substrates. The base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter junction is designed to stop at the lightly doped base. A dc optical gain ≳10 has been successfully observed. Further applications of this idea to the fabrication of a depletion stop double emitter double base transistor and to the Si‐based devices are also discussed.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Pq Bipolar transistors

High field temperature dependent electron drift velocities in GaAs

T. H. Windhorn, T. J. Roth, L. M. Zinkiewicz, O. L. Gaddy, and G. E. Stillman

Appl. Phys. Lett. 40, 513 (1982); http://dx.doi.org/10.1063/1.93161 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
Electron drift velocities in (100) GaAs have been measured at various temperatures from 95 to 385 K for electric field strengths from about 15 to 160 kV/cm at most temperatures and as high as 236 kV/cm at 300 K using a microwave time‐of‐flight technique. The velocity decreases monotonically with increasing electric field strength at all temperatures over the entire field range investigated.
Show PACS
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close