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15 Mar 1982

Volume 40, Issue 6, pp. 447-542

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Amorphous silicon p‐i‐n solar cells fabricated by reactive sputtering

T. D. Moustakas and R. Friedman

Appl. Phys. Lett. 40, 515 (1982); http://dx.doi.org/10.1063/1.93162 (3 pages) | Cited 13 times

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We report, for the first time, the fabrication of indium‐tin‐oxide p‐i‐n amorphous silicon solar cells by the method of reactive sputtering. These solar cells exhibit power conversion efficiency of 4.0% under AM1 illumination. The junction characteristics of these solar cells are discussed.
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72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Ion implantation of Be in In0.53Ga0.47As

K. Tabatabaie‐Alavi, A. N. M. M. Choudhury, N. J. Slater, and C. G. Fonstad

Appl. Phys. Lett. 40, 517 (1982); http://dx.doi.org/10.1063/1.93163 (3 pages) | Cited 9 times

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Multiple energy Be+ ion implantation has been used to produce p‐type regions in n‐In0.53Ga0.47As (n≃1016 cm−3). A simple technique has been developed for capless annealing of InGaAs up to 700 °C. The activation efficiency of the implanted Be+ is dependent on the implant energy and dosage with a maximum activation of 40% for 50‐keV implants. When the total implant dose exceeds 1014 cm−2, substantial diffusion of Be occurs resulting in a p+‐n−‐n structure. Planar diodes formed by Be+ implantation have a reverse breakdown voltage of 50 V and an ideality factor of 1.5 in the forward direction.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors

Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy

S. R. McAfee, D. V. Lang, and W. T. Tsang

Appl. Phys. Lett. 40, 520 (1982); http://dx.doi.org/10.1063/1.93164 (3 pages) | Cited 35 times

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We report the first direct observation of deep levels associated with the n‐GaAs/N‐Al0.25Ga0.75As heterointerface in a double heterostructure (DH) laser grown by molecular beam epitaxy (MBE). The concentration of these states in a nonoptimum device having a high threshold current density is 3×1010 cm−2. The states have an average energy of Ec−0.66 eV and appear to be localized in the n‐GaAs within 140 Å of the interface. The relationship of these states to the laser threshold is discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron trapping in SiO2—An injection mode dependent phenomenon

B. Eitan, D. Frohman‐Bentchkowsky, J. Shappir, and M. Balog

Appl. Phys. Lett. 40, 523 (1982); http://dx.doi.org/10.1063/1.93128 (3 pages) | Cited 13 times

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Electron trapping in metal‐oxide‐silicon structures and its dependence on the injected electron energy distribution and oxide field were studied. It is found that at high injection levels trapping efficiency and saturation level increase with the accelerating field in the Si, and decrease with increase in the oxide field. These results differ markedly from those obtained in low level injection, in which it is assumed that trapping is of electrons injected from the Si into the oxide conduction band. Based on the high level injection experimental results, it is proposed that significant electron trapping is obtained through direct tunneling of hot electrons with energy less than the potential barrier, into localized states in the oxide near the Si‐SiO2 interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Transmission electron microscope observation of dark defects appearing in InGaAsP/InP double heterostructure lasers aged at accelerated operation

K. Wakita, H. Takaoka, M. Seki, and M. Fukuda

Appl. Phys. Lett. 40, 525 (1982); http://dx.doi.org/10.1063/1.93129 (3 pages) | Cited 4 times

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Transmission electron microscopy contrast analysis is presented to reveal the nature of the defects associated with the active region in degraded InGaAsP/InP double heterostructure lasers. Dislocation loops elongating in the [110] direction and platelike precipitates lying in the {111} planes associated with the above dislocation loops have been observed to correspond to dark spot defects appearing in electroluminescence pattern of the lasers operated at 10‐kA/cm2 current density at 250 °C junction temperature.
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42.55.Px Semiconductor lasers; laser diodes
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.60.Fi Electroluminescence

A lateral, unidirectional, bipolar‐type insulated‐gate transistor—A novel semiconductor device

Yasuhisa Ōmura

Appl. Phys. Lett. 40, 528 (1982); http://dx.doi.org/10.1063/1.93130 (2 pages) | Cited 7 times

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A lateral, unidirectional, bipolar‐type insulated‐gate transistor (Lubistor) is newly proposed. It has three features: a p+‐n (or p)‐n+ structure, an insulated gate on the n(or p) region, and the thickness of the n(or p) region is approximately equal to or less than the effective Debye length. It is shown that the Lubistor has triodelike current‐voltage characteristics, and that the characteristic curve shifts continuously toward a high anode‐to‐cathode bias along the anode‐to‐cathode voltage axis when the gate‐to‐cathode voltage enhances the majority‐carrier concentration in the channel region.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors

M. Laviron, D. Delagebeaudeuf, P. Delescluse, P. Etienne, J. Chaplart, and Nuyen T. Linh

Appl. Phys. Lett. 40, 530 (1982); http://dx.doi.org/10.1063/1.93131 (3 pages) | Cited 8 times

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Normally on and normally off two‐dimensional electron gas field‐effect transistors (TEGFET’s) have been fabricated. Source, drain, and gate are directly deposited on the Si‐doped AlGaAs top layer without any recess. At 10 GHz noise figure is 2.3 dB for both types with an associated gain of 10.3 and 7.7 dB for normally on and normally off device respectively. High performance normally off TEGFET opens a large field of application.
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85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors

Multiplication noise in planar InP/InGaAsP heterostructure avalanche photodiodes

Tatsunori Shirai, Susumu Yamasaki, Fukunobu Osaka, Kazuo Nakajima, and Takao Kaneda

Appl. Phys. Lett. 40, 532 (1982); http://dx.doi.org/10.1063/1.93132 (2 pages) | Cited 1 time

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Planar InP/InGaAsP avalanche photodiodes have been fabricated and multiplication noise is discussed. The effective hole to electron ionization rate ratio is found to be 1.9 from the wavelength dependence of multiplication noise.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling

Critical volume fraction of crystallinity for conductivity percolation in phosphorus‐doped Si:F:H alloys

R. Tsu, J. Gonzalez‐Hernandez, S. S. Chao, S. C. Lee, and K. Tanaka

Appl. Phys. Lett. 40, 534 (1982); http://dx.doi.org/10.1063/1.93133 (2 pages) | Cited 159 times

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We have used Raman scattering to deduce the volume fraction of crystallinity for the highly phosphorus‐doped glow‐discharge Si:F:H alloys. The measured critical volume fraction at the onset of rapidly increased conduction in this two‐phase system of microcrystallites embedded in an amorphous matrix is 0.18. This value coincides with the theoretical percolation limit and serves to explain the conduction process in these two‐phase materials which are useful as contacts in amorphous solar cells.
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72.80.Ng Disordered solids
72.60.+g Mixed conductivity and conductivity transitions

Preparation and properties of TiO2 varistors

M. F. Yan and W. W. Rhodes

Appl. Phys. Lett. 40, 536 (1982); http://dx.doi.org/10.1063/1.93134 (2 pages) | Cited 89 times

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TiO2 varistors with low resistivity were developed to operate at low voltages and have a reasonably high nonlinearity index. The varistor properties of TiO2 ceramics are due to two different groups of dopants. Pentavalent cation dopants are used to decrease the TiO2 lattice resistivity to ≃10–100 Ω cm at 25°C. Divalent cation dopants with large ionic radii are introduced to the grain boundary region by segregation process during cooling to provide a localized transport barrier. Thus, the conductive grain lattice and the resistive grain boundaries result in a low voltage varistor.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
72.20.Ht High-field and nonlinear effects

Acoustic emission triangulation of disturbances and quenches in a superconductor and a superconducting magnet

O. Tsukamoto and Y. Iwasa

Appl. Phys. Lett. 40, 538 (1982); http://dx.doi.org/10.1063/1.93135 (3 pages) | Cited 5 times

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Locations of disturbances and quenches in a superconductor and a superconducting magnet have been determined by using a multiple set of acoustic emission (AE) sensors. The letter presents an AE triangulation technique and experimental results.
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74.25.Sv Critical currents
62.20.M- Structural failure of materials
85.25.-j Superconducting devices

Magnetic field assisted alignment of nematic liquid crystal on a polymeric surface

Nobuyoshi Koshida and Sueo Kikui

Appl. Phys. Lett. 40, 541 (1982); http://dx.doi.org/10.1063/1.93136 (2 pages) | Cited 12 times

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The properties of magnetic field assisted alignment of nematic liquid crystal (LC) are described. Nearly perfect homogeneous alignment is obtained with the aid of an external magnetic field along the substrates. It is shown that there exist anisotropic interactions between LC molecules and a simply dip‐coated polymeric surface and that interfacial forces enhanced by an appropriately directed field can establish a stable alignment. The possibility of this alignment technique as an alternative to rubbing is also examined.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
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