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1 Apr 1982

Volume 40, Issue 7, pp. 547-638

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Electrical excitation of an XeCl laser using magnetic pulse compression

I. Smilanski, S. R. Byron, and T. R. Burkes

Appl. Phys. Lett. 40, 547 (1982); http://dx.doi.org/10.1063/1.93173 (2 pages) | Cited 13 times

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Excitation of a small repetitively pulsed XeCl laser by a magnetic pulse compressor (MPC) is reported. The MPC makes use of a saturable inductor constructed out of relatively low frequency ferrites. It compresses a 300‐ns pulse into a 50‐ns pulse, enabling a low di/dt, long life thyratron to drive a fast discharge laser. The laser has operated at 750 Hz for several hours with an average optical output power of 3.5 W.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking

Single‐mode integrated optical 1×N star coupler

T. Findakly and B. Chen

Appl. Phys. Lett. 40, 549 (1982); http://dx.doi.org/10.1063/1.93174 (2 pages) | Cited 10 times

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A new 1×N single‐mode integrated optical star coupler is presented. Directional couplers with linearly changing spacing are utilized to optimize various loss aspects. The device is fabricated on glass substrates by Na+↔K+ ion exchange.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Efficient H2 Raman conversion of long‐pulse XeF laser radiation into the blue‐green region

H. Komine, E. A. Stappaerts, S. J. Brosnan, and J. B. West

Appl. Phys. Lett. 40, 551 (1982); http://dx.doi.org/10.1063/1.93175 (3 pages) | Cited 13 times

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Efficient Raman conversion of microsecond pulse XeF laser radiation into the blue‐green region via the second Stokes shift in hydrogen has been demonstrated using a Raman oscillator‐amplifier scheme. Strong depletion of the pump and the first Stokes radiation accompanied by a dominant second Stokes output was observed for the first time.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Mechanism of asymmetric longitudinal mode competition in InGaAsP/InP lasers

Hiroshi Ishikawa, Mitsuhiro Yano, and Masahito Takusagawa

Appl. Phys. Lett. 40, 553 (1982); http://dx.doi.org/10.1063/1.93176 (3 pages) | Cited 15 times

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The mechanism of asymmetric longitudinal mode competition in InGaAsP/InP lasers is discussed. It is shown that the asymmetric mode competition is not due to the spatial hole burning. When we assume that the energy relaxation time of electrons in the conduction band is ∼0.3 ps, we find that the asymmetric longitudinal mode competition is well explained by the model of Bogatov et al. for the external cavity laser. The asymmetric mode competition can be understood on the basis of the pulsation of the electron population at the beat frequency between two longitudinal modes of ∼1012 Hz. The long energy relaxation time may have relevance to the observed low characteristic temperature of the quaternary lasers.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Monolithic integration of a GaAlAs buried‐heterostructure laser and a bipolar phototransistor

N. Bar‐Chaim, Ch. Harder, J. Katz, S. Margalit, A. Yariv, and I. Ury

Appl. Phys. Lett. 40, 556 (1982); http://dx.doi.org/10.1063/1.93177 (2 pages) | Cited 2 times

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A GaAlAs buried‐heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common‐emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 μm) at collector current levels of 15 mA were obtained.
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85.30.Pq Bipolar transistors
85.60.Dw Photodiodes; phototransistors; photoresistors

X‐ray interference by division of wave front—A new x‐ray interferometer

Shih‐Lin Chang and Cicero Campos

Appl. Phys. Lett. 40, 558 (1982); http://dx.doi.org/10.1063/1.93178 (2 pages)

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An x‐ray interference pattern is observed for the first time by division of the wave front at one piece of a single crystal. The (220) reflection from a V‐shaped silicon crystal and a synchrotron radiation source are used. The crystal, acting simultaneously as a beam splitter, mirror, and analyzer, represents a novel single‐leaf x‐ray interferometer.
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07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)
61.05.cc Theories of x-ray diffraction and scattering
61.05.C- X-ray diffraction and scattering

Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuations

D. Welford and A. Mooradian

Appl. Phys. Lett. 40, 560 (1982); http://dx.doi.org/10.1063/1.93179 (3 pages) | Cited 27 times

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We report here the experimental observation of power‐independent linewidth broadening of cw single‐frequency (GaAl)As diode lasers. This phenomenon is attributed to refractive index fluctuations resulting from statistical fluctuations in the number of conduction electrons in the small active volume of the devices studied.
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42.55.Px Semiconductor lasers; laser diodes

Optically induced catastrophic degradation in InGaAsP/InP layers

H. Temkin, S. Mahajan, M. A. DiGiuseppe, and A. G. Dentai

Appl. Phys. Lett. 40, 562 (1982); http://dx.doi.org/10.1063/1.93180 (4 pages) | Cited 17 times

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Laser‐induced catastrophic degradation in InGaAsP layers has been investigated. Catastrophic dark line (CDL) defects are generated at the spontaneous radiation flux in excess of 100 MW/cm2, significantly higher than in similar GaAlAs structures. In contrast to CDL’s in GaAlAs these dark lines are shown to be due to localized melting at material defects and not at cleaved mirror facets. In view of the very high power threshold this type of catastrophic degradation should be of limited importance for the InGaAsP lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

4‐bit 828‐megasample/s electro‐optic guided‐wave analog‐to‐digital converter

F. J. Leonberger, C. E. Woodward, and R. A. Becker

Appl. Phys. Lett. 40, 565 (1982); http://dx.doi.org/10.1063/1.93181 (4 pages) | Cited 5 times

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Individual bit channels of a 4‐bit guided‐wave electro‐optic analog‐to‐digital converter have been demonstrated at 276 and 828 megasamples per second. The converter consists of a mode‐locked Nd: yttrium aluminum garnet (YAG) laser for sampling, a LiNbO3 Ti‐indiffused waveguide interferometric modulator array for conversion, a Ge avalanche photodiode (APD), and a special 1‐GHz Si integrated circuit for digital processing. Beat‐frequency tests with a 413‐MHz test signal, representing the highest frequency analog waveform converted, are reported.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.30.-d Imaging and optical processing

A novel technique for GaInAsP/InP buried heterostructure laser fabrication

Z. L. Liau and J. N. Walpole

Appl. Phys. Lett. 40, 568 (1982); http://dx.doi.org/10.1063/1.93182 (3 pages) | Cited 31 times

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A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments

Semiconductor internal‐reflection‐interference laser

Hong K. Choi and Shyh Wang

Appl. Phys. Lett. 40, 571 (1982); http://dx.doi.org/10.1063/1.93183 (3 pages) | Cited 11 times

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A semiconductor interferometric laser with built‐in index guiding for lateral mode stability is reported. Interference is caused by internal reflection from a small notch in the waveguide channel. Very stable single longitudinal mode and stable lateral mode were observed. The intereference also causes wavelength locking over the ranges of more than 7 °C within which the wavelength changes at a moderate rate of about 0.6 Å/°C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Laser induced phase locking of hydrogen plasma striations

Wallace Glab and Munir H. Nayfeh

Appl. Phys. Lett. 40, 574 (1982); http://dx.doi.org/10.1063/1.93184 (2 pages)

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Laser induced transient striations of a hydrogen discharge plasma are studied as a function of the ’’detuning’’ of the discharge parameters from the steady‐state oscillatory response conditions. We observed laser induced phase locking of the steady‐state striations.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

A laser deflection technique for sensitive measurements of a reduced‐density channel in neutral gas

M. A. Greenspan and K. V. Reddy

Appl. Phys. Lett. 40, 576 (1982); http://dx.doi.org/10.1063/1.93185 (3 pages) | Cited 5 times

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The radial profile of neutral gas density has been measured for a reduced‐density channel in 2.7‐kPa (20 Torr) air produced by an electrical discharge. Deflection by the channel of a He‐Ne laser is measured by a sensitive position detector, and the density profile is unfolded using an Abel inversion. Density changes of ∼1017/cm3 in air can be measured by this means.
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47.80.-v Instrumentation and measurement methods in fluid dynamics
07.60.Hv Refractometers and reflectometers
42.62.-b Laser applications
42.79.Mt Schlieren devices

Rippled‐field magnetron

G. Bekefi

Appl. Phys. Lett. 40, 578 (1982); http://dx.doi.org/10.1063/1.93186 (3 pages) | Cited 20 times

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The rippled‐field magnetron is a novel crossed‐field millimeter wave source in which electrons move in nearly circular paths under the combined action of a radial electric field, an axial magnetic field, and an azimuthally periodic wiggler magnetic field, Bw cos (Nϑ) oriented transversely to the flow. Estimates are given of the frequency and growth rate of the free‐electron laser (FEL) type of instability excited in this smooth‐bore magnetron configuration.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.27.Ny Relativistic plasmas
42.55.-f Lasers
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Oxygen precipitation effects on Si n+‐p junction leakage behavior

S. N. Chakravarti, P. L. Garbarino, and K. Murty

Appl. Phys. Lett. 40, 581 (1982); http://dx.doi.org/10.1063/1.93187 (3 pages) | Cited 11 times

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The effects of oxygen precipitation in (100) Si wafers on junction leakage characteristics are investigated for double polysilicon gate field‐effect transistor dynamic random‐access memory technology. Experimental data indicate the presence of a very large bulk diffusion leakage current component in the elevated (≳45 °C) temperature range. A simple one‐dimensional minority‐carrier diffusion model predicts the existence of carrier generation centers at the interface between the precipitate‐free and the precipitated regions in the bulk.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Surface composition and etching of III‐V semiconductors in Cl2 ion beams

R. A. Barker, T. M. Mayer, and Randolph H. Burton

Appl. Phys. Lett. 40, 583 (1982); http://dx.doi.org/10.1063/1.93188 (4 pages) | Cited 25 times

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Surface composition and etching of InP and GaAs in Cl2 ion beams was investigated. In situ analysis of the substrate using Auger electron spectroscopy demonstrated selective removal of phosphorous from InP leaving a thin (⩽50 Å) surface layer enriched with In after etching at room temperature with a 500‐eV Cl+/Cl+2 beam. GaAs does not show selective removal of the group V element, resulting in no significant change in surface composition after etching. These results reflect the involatility of the In chlorides at room temperature. Etch rate results indicate that at low ion energy (200 eV) or high neutral reactant flux, removal of the group III chloride from the surface is rate limiting. At high ion energy (500 eV) and low neutral flux, supply of reactant to the surface is rate limiting.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
52.40.Hf Plasma-material interactions; boundary layer effects
61.80.Jh Ion radiation effects

Effect of phosphorus and boron impurities on amorphous silicon solar cells

T. D. Moustakas, R. Friedman, and B. R. Weinberger

Appl. Phys. Lett. 40, 587 (1982); http://dx.doi.org/10.1063/1.93189 (2 pages) | Cited 12 times

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The effect of dopant impurities (P,B) on the performance of sputtered α‐SiHx solar cells has been investigated. We find, for example, that during the deposition of the N+ layer of N+‐I‐Pt Schottky barrier structures, the chamber is contaminated with phosphorous which subsequently degrades the intrinsic film. This effect may be eliminated by prolonged pumping of the chamber between N+ and I layer depositions or by ’’compensating’’ the effects of phosphorous in the I layer through the intentional addition of low levels of boron.
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72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
84.60.Jt Photoelectric conversion

Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

L. W. Cook, G. E. Bulman, and G. E. Stillman

Appl. Phys. Lett. 40, 589 (1982); http://dx.doi.org/10.1063/1.93190 (3 pages) | Cited 60 times

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The electron and hole ionization coefficients α and β in (100) InP have been determined through analysis of photomultiplication data on p+‐n and n+‐p junctions grown by liquid phase epitaxy (LPE). A special device structure is described which allows reproducible thinning of the substrate in order to achieve pure carrier injection from either side of the p‐n junction. By fabricating wafers with depletion layer doping levels from 1.2×1015 to 1.2×1017 cm−3, α and β have been determined over a wider range of electric fields than previously reported. The ratio of β/α decreases from 4.0 to 1.3 as the electric field is increased from 2.4 to 7.7×105 V/cm.
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79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Optoelectronic picosecond sampling system utilizing a modulated barrier photodiode

C. G. Bethea, C. Y. Chen, A. Y. Cho, and P. A. Garbinski

Appl. Phys. Lett. 40, 591 (1982); http://dx.doi.org/10.1063/1.93191 (4 pages) | Cited 1 time

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We describe an opto‐electronic picosecond sampling system utilizing the newly developed modulated barrier majority‐carrier photodetectors. By synchronously detecting amplitude modulated trains of optical picosecond pulses, the high‐speed response of n‐type majority‐carrier devices has been measured.
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79.20.Ds Laser-beam impact phenomena
42.62.-b Laser applications
85.30.-z Semiconductor devices
85.60.Dw Photodiodes; phototransistors; photoresistors

Epitaxial NiSi2 formation by pulsed ion beam annealing

L. J. Chen, L. S. Hung, J. W. Mayer, J.E. E. Baglin, J. M. Neri, and D. A. Hammer

Appl. Phys. Lett. 40, 595 (1982); http://dx.doi.org/10.1063/1.93192 (3 pages) | Cited 25 times

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Epitaxial nickel silicide layers have been formed by ion beam annealing of 300–400‐Å Ni films on (001) Si with 300–400‐ns pulses of H+ or Ba+ ions. Cellular structures were formed at an H+ energy density of 1.3 J/cm2 and a Ba+ energy density above about 0.7 J/cm2. At lower energy densities, uniform epitaxial layers of NiSi2 were formed, as indicated by both Rutherford backscattering channeling and transmission electron microscopy. With ion beam annealing, melting starts at the Ni/Si interface and epitaxy is found at energy densities well below that required to melt crystalline Si.
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68.55.-a Thin film structure and morphology
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Direct observation of grain boundary effects in polycrystalline silicon thin‐film transistors

H. J. Leamy, R. C. Frye, K. K. Ng, G. K. Celler, E. I. Povilonis, and S. M. Sze

Appl. Phys. Lett. 40, 598 (1982); http://dx.doi.org/10.1063/1.93193 (3 pages) | Cited 6 times

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We have applied charge collection scanning electron microscopy to the gate capacitor of n‐channel thin‐film transistors that were fabricated in laser recrystallized polycrystalline silicon. The action of grain boundaries as impediments to channel current flow and as fast diffusion paths for source and drain dopants is directly observed.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Change of interface state spectrum in Al/SiO2/Si structures with biasing during electron irradiation

E. Rosencher and D. Bois

Appl. Phys. Lett. 40, 601 (1982); http://dx.doi.org/10.1063/1.93194 (3 pages) | Cited 9 times

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The interface states induced in metal‐oxide‐semiconductor (MOS) capacitors by 25‐keV electron beam irradiation have been investigated as a function of gate bias and irradiation dose using deep level transient spectroscopy (DLTS). The results clearly reveal the existence of two types of defects. The first type introduces a flat continuum of levels throughout the Si band gap and is not affected by the MOS gate bias. Another type is created only when a positive bias is applied to the MOS gate during irradiation and accounts for an additional broadband of levels in the midgap region. The physical origin of the bias voltage effect on these levels is briefly discussed.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

X‐ray rocking curve study of Si‐implanted GaAs, Si, and Ge

V. S. Speriosu, B. M. Paine, M‐A. Nicolet, and H. L. Glass

Appl. Phys. Lett. 40, 604 (1982); http://dx.doi.org/10.1063/1.93195 (3 pages) | Cited 58 times

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Crystalline properties of Si‐implanted 〈100〉 GaAs, Si, and Ge have been studied by Bragg case double‐crystal x‐ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other. In Si and Ge the number of defects and the strain increase linearly with dose up to the amorphous threshold. In GaAs the increase in these quantities is neither linear nor monotonic with dose. At a moderate damage level the GaAs crystal undergoes a transition from elastic to plastic behavior. This transition is accompanied by the creation of extended defects, which are not detected in Si or Ge.
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61.05.C- X-ray diffraction and scattering
61.72.U- Doping and impurity implantation
62.20.F- Deformation and plasticity

Ion implantation of Si in Be‐implanted In0.53Ga0.47As

A. N. M. M. Choudhury, N. J. Slater, K. Tabatabaie‐Alavi, and C. G. Fonstad

Appl. Phys. Lett. 40, 607 (1982); http://dx.doi.org/10.1063/1.93196 (2 pages) | Cited 6 times

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Ion implantation of Si has been used to create n+ layers in Be‐implanted InGaAs epilayers. A peak electron concentration of 7×1018 cm−3, a sheet resistance of 28 Ω per square, and an average electron mobility of 3000 cm2/Vs are measured in layers implanted with doses of 5.6×1013 cm−2 and 14×1013 cm−2 at 100 and 250 keV, respectively, and proximity cap annealed at 670°C for 15 min. Activation efficiencies of 86 and 38% are found for the low and high energy implants, respectively.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors

Observation of cyclotron resonance in the photoconductivity of two‐dimensional electrons

J. C. Maan, Th. Englert, D. C. Tsui, and A. C. Gossard

Appl. Phys. Lett. 40, 609 (1982); http://dx.doi.org/10.1063/1.93197 (2 pages) | Cited 57 times

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We have observed cyclotron resonance in the photoresponse of the two‐dimensional electron gas at the interface of a GaAs/AlGaAs heterojunction. A 0.5% change in resistivity was obtained under resonance conditions for a far‐infrared intensity of about 10−4 W/cm2.
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85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors
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