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Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy

T. S. Low, G. E. Stillman, A. Y. Cho, H. Morkoc, and A. R. Calawa

Appl. Phys. Lett. 40, 611 (1982); http://dx.doi.org/10.1063/1.93198 (3 pages) | Cited 16 times

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Photothermal ionization spectroscopy has been used to determine the residual donor species present and their relative concentrations in the highest purity molecular beam epitaxial (MBE) n‐GaAs yet reported. Data are presented for samples grown in two different MBE growth reactors: one using elemental As and the other using cracked AsH₃ as the arsenic source. In spite of the substantial differences between growth systems, the donor backgrounds are quite similar.

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72.20.Jv

Charge carriers: generation, recombination, lifetime, and trapping

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Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth

D. W. Kisker, J. N. Miller, and G. B. Stringfellow

Appl. Phys. Lett. 40, 614 (1982); http://dx.doi.org/10.1063/1.93199 (3 pages) | Cited 20 times

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The effects of baffles upon the incorporation of oxygen into organometallic vapor phase epitaxial Al_xGa_1−x As have been investigated. Both graphite and SiC baffles have been studied. A simple model can be used to describe this effect as being dependent on the adsorption of trimethylaluminum onto the graphite, followed by reaction with oxygen to remove, or getter it from the gas stream.

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81.10.Bk

Growth from vapor

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Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon

T. Y. Tan and U. Gösele

Appl. Phys. Lett. 40, 616 (1982); http://dx.doi.org/10.1063/1.93200 (4 pages) | Cited 60 times

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An analysis of the conditions for obtaining oxidation‐enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self‐interstitials coexist at high temperatures and that during oxidation a local equilibrium of point defects is attained. It is shown that the Sb ORD data can be explained quantitatively. Under most oxidation conditions the SiO₂‐Si interface acts as a source of Si self‐interstitials, but at sufficiently high temperatures and long oxidation times the SiO₂‐Si interface behaves as a sink for Si self‐interstitials (or equivalently as a source of vacancies). We suggest a model for this sink behavior in terms of the formation of SiO molecules at the interface and of their subsequent diffusion into the SiO₂ film.

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61.72.Nn	Stacking faults and other planar or extended defects
61.72.J-	Point defects and defect clusters

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Modification of the germanium oxidation process by aluminum adatoms

A. D. Katnani, P. Perfetti, Te‐Xiu Zhao, and G. Margaritondo

Appl. Phys. Lett. 40, 619 (1982); http://dx.doi.org/10.1063/1.93165 (3 pages) | Cited 18 times

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Ultrathin (nominal thickness 0.4–2 Å) aluminum overlayers dramatically increase the oxidation rate of Ge(111) surfaces. The resulting chemisorption phase does not correspond to any of the known oxides of Ge or Al. This new phase is likely to provide a stable interface between Ge and GeO₂.

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81.65.-b	Surface treatments
73.61.Ng	Insulators
81.05.Je	Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

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High performance all‐sputter deposited Cu₂S/CdS junctions

John A. Thornton and W. W. Anderson

Appl. Phys. Lett. 40, 622 (1982); http://dx.doi.org/10.1063/1.93166 (3 pages) | Cited 4 times

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Thin‐film Cu₂S/CdS solar cells have been fabricated in a multisource chamber by using magnetron reactive sputtering to deposit the Cu₂S and CdS layers. An analysis of junction current voltage, log J_sc vs V_oc (where J_sc is the short circuit current and V_oc is the open circuit voltage) and capacitance versus voltage measurements indicates that the junctions have very good quality, with diode ideality factors of near unity, and interface recombination velocities of about 2×10⁵ cm/s. Cells without antireflection coatings have yielded J_sc = 12.2 mA/cm², V_oc = 0.53 V, fill factors of 0.62, and efficiencies of ∼4% in their as‐deposited state. The cells show that Cu₂S/CdS junctions equivalent to those formed by the topotaxial ion exchange method can be formed by sequential all‐vacuum deposition of CdS and Cu₂S, and that magnetron sputtering does not cause damage that compromises their electrical performance.

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81.15.Cd	Deposition by sputtering
84.60.Jt	Photoelectric conversion

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Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulses

A. Lietoila and J. F. Gibbons

Appl. Phys. Lett. 40, 624 (1982); http://dx.doi.org/10.1063/1.93167 (3 pages) | Cited 39 times

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A previously presented computer model was used to calculate melt thresholds and carrier temperatures in crystalline silicon subjected to 20‐ps laser pulses at 532 nm. The energy relaxation time of hot carriers was a variable parameter. A thermalization time of 1 ps yields results which are in very satisfactory agreement with published experimental data: the melt threshold is 0.19 J/cm² and the maximum carrier temperature for the threshold pulse is 5000 K.

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72.20.Jv	Charge carriers: generation, recombination, lifetime, and trapping
79.20.Ds	Laser-beam impact phenomena

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Band tail recombination limit to the output voltage of amorphous silicon solar cells

T. Tiedje

Appl. Phys. Lett. 40, 627 (1982); http://dx.doi.org/10.1063/1.93168 (3 pages) | Cited 39 times

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Recombination mediated by band tail states is shown to substantially reduce the maximum achievable output voltage in amorphous silicon hydride solar cells. The maximum open circuit voltage calculated from measured density of states parameters and reasonable estimates for the localized state capture rates is 1.0±0.1 V.

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84.60.Jt

Photoelectric conversion

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Electrochemical diffusion of arsenic in silicon through thermal thin SiO₂ films

J. L. Martinez and J. C. Ruiz

Appl. Phys. Lett. 40, 630 (1982); http://dx.doi.org/10.1063/1.93169 (2 pages) | Cited 1 time

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In this letter we report experimental results of electrochemical doping of 〈111〉 p‐type silicon with arsenic through thin SiO₂ films. C‐V plots of metal‐oxide‐semiconductor n‐p junctions, made in the electrochemical process, were taken. Data of the amount of arsenic impurity concentration diffused into silicon are given for different electrochemical diffusion times. An estimate value for the diffusion coefficient of arsenic in SiO₂ films at room temperature is also presented.

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81.40.Rs	Electrical and magnetic properties related to treatment conditions
73.40.Qv	Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.90.+f	Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
66.30.J-	Diffusion of impurities

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Amorphous silicon photovoltaic detectors for guided‐wave optics

J. Yumoto, H. Yajima, Y. Seki, J. Shimada, and M. Nakajima

Appl. Phys. Lett. 40, 632 (1982); http://dx.doi.org/10.1063/1.93170 (2 pages) | Cited 2 times

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Amorphous silicon photovoltaic detectors were made on 7059 glass waveguides and Ti‐indiffused LiNbO₃ waveguides. The rise as well as the fall time is 350 ns and the dynamic range is more than 36 dB.

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42.79.Gn	Optical waveguides and couplers
72.40.+w	Photoconduction and photovoltaic effects

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Effective barrier heights of mixed phase contacts: Size effects

J. L. Freeouf, T. N. Jackson, S. E. Laux, and J. M. Woodall

Appl. Phys. Lett. 40, 634 (1982); http://dx.doi.org/10.1063/1.93171 (3 pages) | Cited 61 times

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Computer simulations of mixed phase Schottky contacts have been performed to gain insight into the effects of lateral dimensions upon device behavior. As expected, lateral dimensions comparable to the Debye length of the semiconductor result in strong modification of the device characteristics that would result from independent, parallel diodes. We suggest that such effects can play a role in most experimentally obtained contacts. Current models of Schottky barrier formation typically invoke kinetics‐limited chemical interactions at the metal‐semiconductor interface; such effects are unlikely to be laterally uniform over macroscopic dimensions, and may well provide strong sensitivity to seemingly minor variations in preparation techniques used by different groups. We demonstrate that mixed phase contacts, with size effects, can affect ideality factors, and can also cause disagreement between C‐V and I‐V barrier heights.

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85.30.Hi	Surface barrier, boundary, and point contact devices
85.30.De	Semiconductor-device characterization, design, and modeling
73.30.+y	Surface double layers, Schottky barriers, and work functions

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Planarization of patterned surfaces by ion beam erosion

L. F. Johnson, K. A. Ingersoll, and D. Kahng

Appl. Phys. Lett. 40, 636 (1982); http://dx.doi.org/10.1063/1.93172 (3 pages) | Cited 3 times

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The angular dependence of ion beam erosion has been utilized to achieve planarization of patterned surfaces. Deviation from planarity of <500 Å has been demonstrated on planarized SiO₂ covered patterned Si surfaces with 1.5‐μm‐deep recesses. The technique should be applicable to a wide variety of materials with different physical, chemical, optical, and electrical properties, and should be particularly useful in very high speed integrated circuit development.

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81.65.-b

Surface treatments

BROWSE VOLUMES

1 Apr 1982

Volume 40, Issue 7, pp. 547-638

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