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15 Apr 1982

Volume 40, Issue 8, pp. 643-755

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

U. Koren, K. L. Yu, T. R. Chen, N. Bar‐Chaim, S. Margalit, and A. Yariv

Appl. Phys. Lett. 40, 643 (1982); http://dx.doi.org/10.1063/1.93226 (3 pages) | Cited 9 times

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Monolithic integration of 1.3‐μm groove lasers and metal‐insulator‐semiconductor field‐effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300‐μm cavity length are obtained. MIS depletion mode FET’s with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Optical‐thermal induced total internal reflection‐to‐transmission switching at a glass‐liquid crystal interface

I. C. Khoo

Appl. Phys. Lett. 40, 645 (1982); http://dx.doi.org/10.1063/1.93227 (3 pages) | Cited 15 times

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An intensity dependent change from a state of total internal reflection to transmission of an optical beam at a nonlinear glass‐nematic liquid crystal interface is observed. The effect is attributed to optically induced molecular reorientation and thermal indexing, depending on the liquid crystal used.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.25.Lc Birefringence
42.65.-k Nonlinear optics

Resonantly enhanced vacuum ultraviolet generation and multiphoton ionization in carbon monoxide gas

James H. Glownia and Robert K. Sander

Appl. Phys. Lett. 40, 648 (1982); http://dx.doi.org/10.1063/1.93228 (3 pages) | Cited 28 times

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Competition between three‐photon resonantly enhanced vacuum ultraviolet third‐harmonic generation and six‐photon multiphoton ionization using the A state in gaseous carbon monoxide is observed. Excitation spectra of the third‐harmonic emission exhibit increasing blue shifts and broadening with increasing pressure due to the phase matching requirements. Estimates for the efficiency and tunability show that third‐harmonic generation in carbon monoxide molecules is a promising source for coherent vacuum ultraviolet light.
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33.20.Ni Vacuum ultraviolet spectra
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Codirectional TE‐TM mode conversion through codirectional and contradirectional acousto‐optic interactions

L. N. Binh

Appl. Phys. Lett. 40, 650 (1982); http://dx.doi.org/10.1063/1.93229 (3 pages)

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Codirectional TE‐TM mode conversion is investigated for the codirectional and contradirectional interaction geometries between optical guided waves and surface acoustic waves in a Ti‐diffused optical waveguide. The acoustic input power required for maximum mode conversion of 20 mW has been achieved for both cases. The conversion center frequencies are closely the same for both configurations.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
84.40.Az Waveguides, transmission lines, striplines

InP electro‐optic directional coupler

A. Carenco, L. Menigaux, and N. T. Linh

Appl. Phys. Lett. 40, 653 (1982); http://dx.doi.org/10.1063/1.93230 (3 pages) | Cited 5 times

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An electro‐optic directional coupler switch has been fabricated in InP with an homojunction structure. Each single‐mode guide is made in a n layer grown on a n+ substrate, the p+ etched rib used to confine the light being obtained by diffusion. A linear variation of the coupling length with reciprocal wavelength has been found between 1.06 and 1.51 μm. By reversely biasing the ’’stepped Δβ’’ junctions with less than 12 V, both switching states have been achieved at 1.51 μm, with a power isolation better than 16 dB on a 8‐mm‐long device. This is a new promising step towards InP‐integrated optics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers

cw optically pumped 12‐μm NH3 laser

C. Rolland, B. K. Garside, and J. Reid

Appl. Phys. Lett. 40, 655 (1982); http://dx.doi.org/10.1063/1.93231 (3 pages) | Cited 12 times

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A 30‐W cw CO2 laser operating on the R(30) 9‐μm transition is used to pump a ring laser cavity containing NH3. Emission at 12.08 μm is observed with cw output power of 180 mW. A Raman process is shown to be responsible for the gain at 12.08 μm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.By Design of specific laser systems

Stimulated emission in a degenerately doped GaAs quantum well

N. Holonyak, B. A. Vojak, H. Morkoç, T. J. Drummond, and K. Hess

Appl. Phys. Lett. 40, 658 (1982); http://dx.doi.org/10.1063/1.93232 (3 pages) | Cited 17 times

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Data are presented showing that a single GaAs quantum well as small as Lz ≲80 Å can be operated in stimulated emission if supplied sufficiently with electrons, which can be done by doping (ND≳Nc). It is shown, via photoluminescence data and an approximate analysis, that the smaller the GaAs well size Lz (1500, 400, 200, 80 Å) the greater is the effect of a fixed confining layer doping (ND ∼5×1018/cm3) in increasing the quantum‐well carrier population and the luminescence energy.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.45.+h Stimulated emission

Optically pumped mode‐locked InGaAsP lasers

R. S. Putnam, C. B. Roxlo, M. M. Salour, S. H. Groves, and M. C. Plonko

Appl. Phys. Lett. 40, 660 (1982); http://dx.doi.org/10.1063/1.93218 (3 pages) | Cited 8 times

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We report tunable cw mode‐locked laser action from synchronously pumped InGaAsP lasers with an output power of 2 mW. Nearly bandwidth‐limited pulses of 6‐ps duration have also been obtained using a mechanically chopped pump beam. 2–5‐μm‐thick LPE quaternary layers lasing at 1.1 and 1.2 μm are longitudinally pumped by a Kr+ laser. Peak output powers of greater than 25 W, tunable over a 25‐nm range, can be achieved. Unmode‐locked operation has also been accomplished.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Textured germanium optical storage medium

H. G. Craighead, R. E. Howard, P. F. Liao, D. M. Tennant, and J. E. Sweeney

Appl. Phys. Lett. 40, 662 (1982); http://dx.doi.org/10.1063/1.93219 (3 pages) | Cited 8 times

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A new optical storage medium is described which consists of a Ge film microscopically textured by reactive ion etching. The Ge surface, with a random array of decoupled columns of cross‐sectional dimensions less than 100 nm, has a visible specular reflectance of less than 0.06. Reflective spots ∼1 μm in diameter have been produced on this surface by local heating with a low power laser beam. The fabrication, microstructure, and possibility of encapsulating the medium are discussed.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Single mode, piezoelectrically tuned, picosecond short‐cavity dye laser

A. J. Cox, Charles D. Merritt, and Gary W. Scott

Appl. Phys. Lett. 40, 664 (1982); http://dx.doi.org/10.1063/1.93220 (3 pages) | Cited 8 times

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This letter reports a piezoelectric‐translator‐tuned, short‐cavity picosecond dye laser. This laser, pumped by second or third harmonic picosecond pulses from a mode‐locked Nd+3: glass laser, has been operated at cavity lengths which allow only a single longitudinal mode within the lasing bandwidth of a typical dye gain curve. By varying the cavity length with the piezoelectric translator, the output wavelength has been continuously tuned. With different mirror sets and dyes, the lasing output can be varied across the visible spectrum. The laser output is characterized by a modewidth of 0.3 nm (multimode) and 1.5 nm (single mode). The energy conversion efficiency was found to be roughly 0.3% for single‐mode operation and ≳3% for multimode operation at 600 nm.
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42.60.By Design of specific laser systems
42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond measurement of spontaneous and stimulated emission from injection lasers

M. A. Duguay and T. C. Damen

Appl. Phys. Lett. 40, 667 (1982); http://dx.doi.org/10.1063/1.93221 (3 pages) | Cited 11 times

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Spontaneous and stimulated emission from gain‐switched injection lasers is measured directly with picosecond resolution. Below threshold, the luminescence time profile shows a carrier concentration rise time of 300 ps in a transverse‐junction AlGaAs laser diode. Above threshold, laser pulse widths down to 30 ps were observed and a regime of operation was found where a single longitudinal mode predominates in the output spectrum.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

Reduction in crystallographic surface defects and strain in 0.2‐μm‐thick silicon‐on‐sapphire films by repetitive implantation and solid‐phase epitaxy

I. Golecki, H. L. Glass, and G. Kinoshita

Appl. Phys. Lett. 40, 670 (1982); http://dx.doi.org/10.1063/1.93222 (3 pages) | Cited 5 times

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A novel technique has been developed to reduce the high concentration of planar lattice defects and compressive strain throughout the thickness of chemically vapor deposited (CVD), epitaxial Si‐on‐sapphire (SOS) films. This technique involves two or more steps of Si implantation and furnace annealing below 600 °C. In each step, the most defective region of the Si film is amorphized and solid‐phase epitaxial regrowth is induced using the least defective region as seed. Analyses using MeV 4He+ Rutherford backscattering/channeling and x‐ray diffraction show that in a 0.16‐μm‐thick, (100) oriented, CVD SOS film which had been recrystallized in this way, the Si surface channeling yield was reduced from χ0 = 0.14 to 0.07 and the average in‐plane strain decreased from ϵ∥ = −4.2×10−3 to −1×10−3.
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68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation

Temperature and thickness effects on the explosive crystallization of amorphous germanium films

R. Koba and C. E. Wickersham

Appl. Phys. Lett. 40, 672 (1982); http://dx.doi.org/10.1063/1.93223 (4 pages) | Cited 13 times

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See Also: Erratum

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Measurements of the interdependence of the thickness and temperature required to support the propagation of explosive crystallization fronts in sputter deposited amorphous germanium films are described. The results indicate that the minimum film thickness and minimum ambient transformation temperature are inversely related. These data support an energy balance model of the explosive crystallization phenomenon.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

X‐ray photoemission spectroscopy study of surface oxidation of Nb/Al overlayer structures

J. Kwo, G. K. Wertheim, M. Gurvitch, and D. N. E. Buchanan

Appl. Phys. Lett. 40, 675 (1982); http://dx.doi.org/10.1063/1.93224 (3 pages) | Cited 28 times

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We identify and characterize the chemical nature of the oxide formed by the air oxidation of thin Al overlayers on Nb. Take‐off angle experiments were performed to determine the sequential layer configuration. The thickness of the oxide did not exceed 20 Å, regardless of the thickness of the metallic Al originally deposited. Grain‐boundary diffusion is suggested as a mechanism for the removal of most of the excess metallic Al. The observation of a small amount of residual metallic Al near the interface is in accord with Miedema’s theory of surface segregation which indicates that Al will segregate to the surface of a Nb‐Al alloy. An Al overlayer as thin as 9.5 Å is sufficient to protect the underlying Nb film from oxidation and to form an effective tunnel‐junction barrier.
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73.40.Gk Tunneling
73.20.-r Electron states at surfaces and interfaces
74.50.+r Tunneling phenomena; Josephson effects

Enhancing micrographs obtained with a scanning acoustic microscope using false‐color encoding

R. Hammer and R. L. Hollis

Appl. Phys. Lett. 40, 678 (1982); http://dx.doi.org/10.1063/1.93225 (3 pages) | Cited 5 times

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The periodic signal variations observed in reflection acoustic microscopy when lens‐to‐sample spacing is changed lead to reversals in image contrast. This contrast mechanism can be described by a V(Z) function, where V is the transducer voltage and Z the lens‐to‐sample spacing. In this work we show how by obtaining V(Z) curves from each plane of a complex sample, judicious choices of focal positions can be made to optimize signals from planes of interest, which allows color encoding of the image from each plane in an overlay image. We present false‐color micrographs obtained in this way, along with A scans and V(Z) curves to demonstrate the technique.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Carrier conduction in thin silicon nitride films

Eiichi Suzuki, Hisato Hiraishi, Kenichi Ishii, and Yutaka Hayashi

Appl. Phys. Lett. 40, 681 (1982); http://dx.doi.org/10.1063/1.93233 (3 pages) | Cited 4 times

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Carrier conduction in thin chemical vapor deposition (CVD) silicon nitride films in the thickness range 467 Å⩾tN⩾88 Å is investigated. The dominant carriers flowing through the thin nitride films are holes for both polarities. The enormous increase of current with decreasing film thickness can be explained by a thickness fluctuation model. The thickness fluctuation of about 25 Å is obtained in the electrical measurement. This model is confirmed by observing the appearance of microhillocks on the surface of oxidized thin nitride films.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.55.-g Dielectric thin films

Growth of single‐crystal CoSi2 on Si(111)

R. T. Tung, J. C. Bean, J. M. Gibson, J. M. Poate, and D. C. Jacobson

Appl. Phys. Lett. 40, 684 (1982); http://dx.doi.org/10.1063/1.93234 (3 pages) | Cited 133 times

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Single‐crystal CoSi2 films have been grown under ultrahigh vacuum conditions on Si (111) by both standard deposition and molecular beam epitaxy techniques. Films were analyzed by Rutherford backscattering spectroscopy and channeling, transmission electron microscopy, and low energy electron diffraction. The films are free of grain boundaries but are rotated 180° about the normal to the Si surface. The crystalline perfection, as measured by channeling, is the best yet reported for an epitaxial silicide system. The expected hexagonal misfit dislocation arrays, along with a coarser triangular defect structure, are confined to the plane of the interface.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Novel low‐temperature recrystallization of amorphous silicon by high‐energy ion beam

Jyoji Nakata and Kenji Kajiyama

Appl. Phys. Lett. 40, 686 (1982); http://dx.doi.org/10.1063/1.93235 (3 pages) | Cited 53 times

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An entirely new beam annealing method that employs a high‐energy (∼2.5 MeV) heavy ion (As75, Kr84) beam is presented. With this technology, an amorphous Si layer is recrystallized at below ∼300 °C substrate temperature (much lower than the ordinary solid phase epitaxial growth temperature of ∼600 °C). The temperature just under the beam spot is estimated to be at most ∼20° C higher than that in the surrounding region, because of the large beam spot size (∼10 mmϕ) and rapid scan speed (∼104 cm/s). This low‐temperature annealing feature is quite different from the case for conventional furnace, laser, electron, and low‐energy ion beam annealing. After recrystallization, impurity As atoms are located at substitutional sites with no tetrahedral interstitial components, and are scarcely redistributed.
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61.80.Jh Ion radiation effects
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

AlN capped annealing of Si implanted semi‐insulating GaAs

S. Okamura, H. Nishi, T. Inada, and H. Hashimoto

Appl. Phys. Lett. 40, 689 (1982); http://dx.doi.org/10.1063/1.93236 (2 pages) | Cited 15 times

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AlN capped annealing can be used successfully for thin n‐layer formation to minimize the thermal conversion effects. Si ions were implanted into Cr‐doped semi‐insulating GaAs substrates with 145 keV, to a dose of 2.40×1012 cm−2. Subsequently, the samples were annealed at 850 °C, 20 min with reactive sputtered AlN cap. The carrier profiles fit very well to the theoretical one. No thermal pits, cracks, and peeling‐off were observed even on 1.2‐μm‐thick AlN cap after up to 1000 °C annealing.
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72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Electrical properties of line defects in thin zone‐recrystallized silicon films on silicon dioxide

E. W. Maby and D. A. Antoniadis

Appl. Phys. Lett. 40, 691 (1982); http://dx.doi.org/10.1063/1.93237 (3 pages) | Cited 6 times

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The electrical influence of line defects which are present in thin zone‐recrystallized silicon films prepared in a movable strip heater oven has been examined in terms of both bulk and surface majority‐carrier transport. Large‐angle boundaries which separate large (typically 2 mm×1 cm) single‐crystalline grains induce significant bulk conductivity degradation and notable surface effects in transversely intersected field‐effect transistors. The influence of the majority of line defects which are regularly superimposed over the large grains at approximate 25‐μm intervals is relatively minor.
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72.20.-i Conductivity phenomena in semiconductors and insulators
61.72.-y Defects and impurities in crystals; microstructure

Hot carrier effects in the collection efficiency of solar cells: a‐Si:H

Allen Rothwarf

Appl. Phys. Lett. 40, 694 (1982); http://dx.doi.org/10.1063/1.93238 (2 pages) | Cited 15 times

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Recent models for the falloff in spectral response at short wavelengths in low mobility solar cell materials have been based upon the diffusion of thermalized carriers against the electric field to high recombination contacts or interfaces. These models neglect the excess energy imparted to the carriers by short wavelength light, that enable them to easily move against the field while thermalizing. Calculations of the distance the carriers diffuse before losing their excess energy by phonon emission indicate that in the high absorption coefficient region of a‐Si:H up to 50% of the carriers can reach a contact or interface before thermalizing.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
72.15.Lh Relaxation times and mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Growth of high quality epitaxial Ge films on (100)Si by sputter deposition

G. Bajor, K. C. Cadien, M. A. Ray, J. E. Greene, and P. S. Vijayakumar

Appl. Phys. Lett. 40, 696 (1982); http://dx.doi.org/10.1063/1.93239 (3 pages) | Cited 16 times

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Expitaxial Ge films ∼1.5 μm thick, were grown on (100) Si substrates at relatively low temperatures, 470°C, by rf sputter deposition. Low‐energy ion bombardment of the substrate and growing film during deposition provided compositional grading of the lattice mismatched interface. X‐ray diffraction and electron channeling spectra indicated that the films were single crystals while Hall measurements showed them to be p type with p(300 K)≃1×1017 cm−3 and corresponding carrier mobilities, 1280 cm2/Vs, comparable to the best bulk crystals. The thickness of the compositionally graded junction was found by Auger electron spectroscopy depth profiling to be ∼200 nm. C‐V measurements indicated that over this region the net acceptor concentration increased from 4×1014 cm−3 near the substrate surface to the bulk film value of 1×1017 cm−3. Large area p‐n diodes exhibited reverse breakdown voltages of ⩾10 V.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Silicon ribbon growth using electron bombardment

D. Casenave, R. Gauthier, L. Vandekerkove, and P. Pinard

Appl. Phys. Lett. 40, 698 (1982); http://dx.doi.org/10.1063/1.93217 (3 pages) | Cited 2 times

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A method for the production of polysilicon ribbons for solar energy conversion from powder as starting material has been developed. It is based upon the use of an electron beam which, while creating a mobile molten zone on the small grained polycrystalline ribbons, induces the crystallization. These ’’preribbons’’ can be produced directly from silicon powder with the same apparatus. This method is particularly economical because (1) electron beam was used as a means of crystallization (very high energy deposition rate) and (2) as a result of two purification processes peculiar to the method (purification by zone melting and vacuum evaporation), the use of silicon powder of low purity could be envisaged.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
84.60.Jt Photoelectric conversion

Reduction of fast surface states on p‐type GaAs

R. K. Ahrenkiel, R. S. Wagner, S. Pattillo, D. Dunlavy, T. Jervis, L. L. Kazmerski, and P. J. Ireland

Appl. Phys. Lett. 40, 700 (1982); http://dx.doi.org/10.1063/1.93240 (4 pages) | Cited 1 time

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Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal‐insulator‐semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.
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68.35.Md Surface thermodynamics, surface energies
73.20.-r Electron states at surfaces and interfaces

Microscopy of Si films during laser melting

R. A. Lemons and M. A. Bösch

Appl. Phys. Lett. 40, 703 (1982); http://dx.doi.org/10.1063/1.93241 (4 pages) | Cited 15 times

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By using an optical microscope to directly observe thin Si films as they are melted with a cw argon laser beam, the crystallization process can be better understood. In an environment containing oxygen, stable filaments of solid silicon precipitate from the molten pool at low laser power. The surrounding melt may contain dissolved oxygen which reduces the melting point, allowing the liquid and solid to coexist. As laser power is increased a uniform molten pool is achieved. In emitted light the pool is dark compared to the surrounding solid due to the melt’s low emissivity. The spectrum of this emitted thermal radiation accurately fits the Planck law at 1740 °K, confirming the temperature of the melt.
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68.55.-a Thin film structure and morphology
78.60.-b Other luminescence and radiative recombination
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
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