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15 Apr 1982

Volume 40, Issue 8, pp. 643-755

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Variable range hopping in Al implanted sapphire

J. J. Hauser and J. W. Rodgers

Appl. Phys. Lett. 40, 707 (1982); http://dx.doi.org/10.1063/1.93242 (2 pages) | Cited 1 time

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Variable range hopping conductivity (i.e. resistivity proportional to exp T−1/4) has been observed in Al implanted sapphire. The conductivity of these implanted layers was studied as a function of implanted doses.
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72.80.Jc Other crystalline inorganic semiconductors
61.72.U- Doping and impurity implantation

Interface state generation in the Si‐SiO2 system by photoinjecting electrons from an Al field plate

Stella Pang, S. A. Lyon, and Walter C. Johnson

Appl. Phys. Lett. 40, 709 (1982); http://dx.doi.org/10.1063/1.93243 (3 pages) | Cited 24 times

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We observe the generation of interface states in the Si‐SiO2 system when electrons are internally photoinjected from an Al field plate and are swept through the oxide by a moderate electric field. Interface states appear immediately at 90 K. The rate of interface state generation caused by photoinjected electrons depends on the oxide thickness and the magnitude of the bias field. The generated interface state density is found to increase as Nss = AQs, where Q is the injected charge and s is generally in the range 0.5–0.7. The generation does not saturate after passage of a total charge of 0.35 C/cm2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Enhancement type InP metal‐insulator‐semiconductor field‐effect transistor with plasma anodic aluminium oxide as the gate insulator

Y. Hirayama, H. M. Park, F. Koshiga, and T. Sugano

Appl. Phys. Lett. 40, 712 (1982); http://dx.doi.org/10.1063/1.93244 (2 pages) | Cited 12 times

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Enhancement type InP metal‐insulator‐semiconductor field‐effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm2/Vs and 2000 cm2/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Hydrogenation induced improvement in electronic properties of heteroepitaxial silicon‐on‐sapphire

L. Jastrzebski, J. Lagowski, G. W. Cullen, and J. I. Pankove

Appl. Phys. Lett. 40, 713 (1982); http://dx.doi.org/10.1063/1.93201 (4 pages) | Cited 13 times

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Photovoltage spectroscopy and laser‐scanning photovoltage measurements have been utilized to assess the effect of hydrogenation on electric properties of epitaxial silicon‐on‐sapphire (SOS) films. It has been found that hydrogenation suppresses deep levels in the middle of the energy gap, and significantly decreases the magnitude of microscopic inhomogeneities. The present results may have implications for SOS electronic devices and demonstrate a relationship between structured defects (dangling bonds) and electronic properties of SOS films.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects

Laser‐induced chemical vapor deposition of SiO2

P. K. Boyer, G. A. Roche, W. H. Ritchie, and G. J. Collins

Appl. Phys. Lett. 40, 716 (1982); http://dx.doi.org/10.1063/1.93202 (4 pages) | Cited 66 times

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We have demonstrated rapid (3000 Å/min) photochemical deposition of silicon dioxide from gas phase donor molecules. An ArF (193 nm) laser was used to excite and dissociate gas phase SiH4 and N2O molecules in contrast to earlier work with incoherent mercury lamps. We have achieved 20 times the deposition rate, limited the dissociation volume to a localized region, and minimized the direct impingement of UV photons on the substrate. Although the SiO2 deposition rate was insensitive to substrate temperature from 20 to 600 °C, film quality noticeably improved above 200 °C. Metal‐oxide‐semiconductor capacitors were fabricated and characterized in order to measure SiO2 electrical properties. Film composition was investigated using Auger and infrared spectroscopy techniques and showed that the SiO2 is stoichiometric and contains less than 5% nitrogen.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of oxide precipitates on minority‐carrier lifetime in Czochralski‐grown silicon

Masami Miyagi, Kazumi Wada, Jiro Osaka, and Naohisa Inoue

Appl. Phys. Lett. 40, 719 (1982); http://dx.doi.org/10.1063/1.93203 (3 pages) | Cited 19 times

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The effect of oxide precipitate in Czochralski‐grown silicon crystals on minority‐carrier lifetime was investigated. The oxide precipitates, generated by heterogeneous nucleation in as‐grown crystals were found to decrease the lifetime. On the other hand, the oxide precipitates generated by homogeneous nucleation decreased the lifetime when their length was greater than 100 Å. The minority‐carrier lifetime was nearly proportional to the reciprocal of the oxide precipitate length.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.S- Impurities in crystals

Efficient GaAs solar cells formed by UV laser chemical doping

T. F. Deutsch, John C. C. Fan, D. J. Ehrlich, G. W. Turner, R. L. Chapman, and R. P. Gale

Appl. Phys. Lett. 40, 722 (1982); http://dx.doi.org/10.1063/1.93204 (3 pages) | Cited 23 times

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ArF and XeF excimer laser radiation has been used to form p‐n junctions in GaAs. The laser releases S atoms by the dissociation of H2S gas and simultaneously heats the substrate to allow incorporation of the S dopant. Solar cells having AM1 efficiencies of 10.8% have been fabricated from these junctions. The process can also produce doped GaAs layers with sheet resistances as low as 30 Ω/☒.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Carbon in polycrystalline silicon, influence on resistivity and grain size

J. Bloem and W. A. P. Claassen

Appl. Phys. Lett. 40, 725 (1982); http://dx.doi.org/10.1063/1.93205 (2 pages) | Cited 1 time

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Polycrystalline silicon grown by chemical vapor deposition was doped with small carbon concentrations by the introduction of C2H2 into the gasflow. Incorporation of small carbon concentrations leads to a reduction in the resistivity of phosphorous‐doped layers. Higher carbon concentrations lead to an increase in resistivity and a reduction in grain size accompanied by the formation of a second phase. These layers show an increased resistance to grain growth on annealing. The present study suggests a compensation of the electrical effects of surface states by the presence of carbon.
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72.80.Cw Elemental semiconductors
68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria

n‐CuInSe2/polysulfide photoelectrochemical solar cells

Yehudith Mirovsky and David Cahen

Appl. Phys. Lett. 40, 727 (1982); http://dx.doi.org/10.1063/1.93206 (2 pages) | Cited 17 times

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We report that n‐type single crystals of n‐CuInSe2 in aqueous polysulfide solution exhibit high quantum efficiencies of 0.8–0.9 in the wavelength region between 600–1150 nm when used as photoanodes in photoelectrochemical cells. Photocurrents of 28 mA/cm2 were measured on a ’’winter’’ day in Rehovot (71 mW/cm2) which corresponds to 40 mA/cm2 under AM1 (Air Mass 1) conditions (100‐mW/cm2 sunlight). Stability tests of n‐CuInSe2 photoanodes (20 000‐C/cm2 photocharge passage) at short circuit current densities of 40 mA/cm2 have shown no deterioration whatsoever of the measured photocurrents.
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73.40.Mr Semiconductor-electrolyte contacts
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.-c Electronic transport in interface structures

Picosecond laser pulse irradiation of crystalline silicon

K. L. Merkle, H. Baumgart, R. H. Uebbing, and F. Phillipp

Appl. Phys. Lett. 40, 729 (1982); http://dx.doi.org/10.1063/1.93207 (3 pages) | Cited 7 times

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Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high‐voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.
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79.20.Ds Laser-beam impact phenomena
81.40.Gh Other heat and thermomechanical treatments
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

Growth of InP and InGaAsP (Eg≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressure

V. G. Keramidas, H. Temkin, and W. A. Bonner

Appl. Phys. Lett. 40, 731 (1982); http://dx.doi.org/10.1063/1.93208 (3 pages) | Cited 4 times

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A method is presented for the liquid phase epitaxial growth of stoichiometric InP and InGaAsP (Eg⩾1.15 eV) epitaxial layers by creating a phosphorus overpressure in the growth ambient. The effectiveness of the method and the stoichiometry of InP layers can be monitored with the photoluminescent spectra of a phosphorus vacancy‐impurity complex.
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81.10.Fq Growth from melts; zone melting and refining

Tunneling relaxation time measurements in thin oxide metal oxide semiconductor capacitors

J. A. Shimer and W. E. Dahlke

Appl. Phys. Lett. 40, 734 (1982); http://dx.doi.org/10.1063/1.93209 (2 pages) | Cited 2 times

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Photocapacitance of metal‐oxide‐semiconductor diodes with oxide thickness 20 Å<dox <40 Å was measured as function of photon energy and temperature to determine the relaxation time τT = τ0 exp(αdox) of metal electrons tunneling into interface states of the devices. We found an attempt‐to‐escape time τ0 = 10−5 s and a tunneling attenuation α = 0.5 Å−1 which increased about 10% from the silicon conduction band to midgap. Variations of the tunneling distance were Δdox = ±2.5 Å.
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73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Ultra‐low‐noise tunnel junction dc SQUID with a tightly coupled planar input coil

M. B. Ketchen and J. M. Jaycox

Appl. Phys. Lett. 40, 736 (1982); http://dx.doi.org/10.1063/1.93210 (3 pages) | Cited 105 times

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We present a new superconducting quantum interference device (SQUID) that combines ultra‐low‐noise performance with tight coupling to a useable input coil. The inductive loop of the SQUID consists of a superconducting square washer that is slit in a low inductance fashion from its central hole to an outside edge where two Josephson tunnel junctions are incorporated. The inductance of the SQUID is about 90 pH, and each junction has a critical current of 15 μA and a resistive shunt of 4.5 Ω. The 190‐nH input coil is a planar spiral of 50 turns situated immediately above the washer and coupled to the SQUID with a coupling constant k2 of 0.86. The SQUID has a minimum coupled energy sensitivity of 19h at 4.2 K and 8h at 1.5 K, in good agreement with theory. The crossover between white and low frequency noise occurs at ∼250 Hz.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Logic delays of 5‐μm current‐switched Josephson gates

S. S. Pei

Appl. Phys. Lett. 40, 739 (1982); http://dx.doi.org/10.1063/1.93211 (3 pages) | Cited 1 time

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Logic delays of a current‐switched latching gate called the Josephson atto‐Weber switch and its use in a dc powered flip‐flop module have been investigated. Experimental circuits with cascade chains of 31 gates were fabricated using 5‐μm square lead alloy tunnel junctions. Delays were measured on both the latching and the unlatching chains. The experimental circuits demonstrate operation faster than those reported for other Josephson gate designs using the same linewidth. For the latching OR gate with fanout of 3, the shortest measured gate delay is 15 ps.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Resistor coupled Josephson logic

J. Sone, T. Yoshida, and H. Abe

Appl. Phys. Lett. 40, 741 (1982); http://dx.doi.org/10.1063/1.93212 (4 pages) | Cited 9 times

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A resistor coupled Josephson logic (RCJL) family, composed of OR, AND, and 2/3 majority gates, is proposed. The RCJL family consists of multiple Josephson junctions and resistors, and employs current injected switching. OR gates have I‐O isolation capability with high input sensitivity and wide operating current margin. In the AND gate, current margin as wide as the CIL AND gate and higher input sensitivity can be achieved without inductors. Experimental verification of the RCJL family operation is also described.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
07.50.Ek Circuits and circuit components

Thermal noise induced switching of Josephson logic devices

M. Klein and A. Mukherjee

Appl. Phys. Lett. 40, 744 (1982); http://dx.doi.org/10.1063/1.93213 (4 pages) | Cited 16 times

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Thermal noise induced switching of Josephson logic devices is studied, both theoretically and experimentally. The results are critical for the design of the operating bias points for these devices. An analysis of the relevant energy contours shows that a three‐junction superconducting quantum interference device has the same noise switching rate as a point junction with the same maximum critical current. Experimental results, for the dependence of the thermal noise induced switching rate on the gate current bias ratio, are in very good agreement with the theory.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents
85.25.-j Superconducting devices
72.70.+m Noise processes and phenomena

Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers

D. W. Jillie, H. Kroger, L. N. Smith, E. J. Cukauskas, and M. Nisenoff

Appl. Phys. Lett. 40, 747 (1982); http://dx.doi.org/10.1063/1.93214 (4 pages) | Cited 18 times

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See Also: Erratum

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Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN‐αSi‐Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S‐I‐S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.
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74.50.+r Tunneling phenomena; Josephson effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.25.-j Superconducting devices

Production of slow positrons with a 100‐MeV electron linac

R. H. Howell, R. A. Alvarez, and M. Stanek

Appl. Phys. Lett. 40, 751 (1982); http://dx.doi.org/10.1063/1.93215 (2 pages) | Cited 49 times

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Intense, pulsed beams of low‐energy positrons have been produced by a high‐energy beam from an electron linac. The production mechanism has been studied near 100‐MeV incident energy and several characteristics that affect slow‐positron production have been identified. These characteristics include the geometry of the electron‐positron converter and positron moderator, the thickness of the converter, and the energy of the electron beam. The production efficiency for producing low‐energy positrons has been determined experimentally. The results imply that low‐energy positron beams from a linac can be of much higher intensity than those beams currently derived from radioactive sources.
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29.25.Bx Electron sources

Laser‐driven electron acceleration by means of two‐wave interaction

R. H. Pantell and T. I. Smith

Appl. Phys. Lett. 40, 753 (1982); http://dx.doi.org/10.1063/1.93216 (2 pages) | Cited 13 times

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Two‐wave electron acceleration is analyzed where one field is a slow microwave signal and the other is a laser light beam. An acceleration gradient of 1.0 GeV/m is achievable with a laser field strength of approximately 1010 V/cm.
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29.20.Ba Electrostatic accelerators
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
FREE

Erratum: Pseudogap state density in sputtered a‐Si:H from field effect and capacitance measurements [Appl. Phys. Lett. 39, 263 (1981)]

Richard Weisfield, Pierre Viktorovitch, David A. Anderson, and William Paul

Appl. Phys. Lett. 40, 755 (1982); http://dx.doi.org/10.1063/1.93291 (1 page)

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Abstract Unavailable
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71.20.-b Electron density of states and band structure of crystalline solids
71.23.-k Electronic structure of disordered solids
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
99.10.Cd Errata
FREE

Erratum: The nonlinear propagation constant of a surface plasmon [Appl. Phys. Lett. 39, 889 (1981)]

Dror Sarid

Appl. Phys. Lett. 40, 755 (1982); http://dx.doi.org/10.1063/1.93292 (1 page)

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Abstract Unavailable
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42.65.-k Nonlinear optics
68.35.Ja Surface and interface dynamics and vibrations
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
99.10.Cd Errata
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