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1 May 1982

Volume 40, Issue 9, pp. 759-856

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A picosecond transient digitizer based on nonlinear integrated optics

R. Normandin and G. I. Stegeman

Appl. Phys. Lett. 40, 759 (1982); http://dx.doi.org/10.1063/1.93275 (3 pages) | Cited 14 times

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An optical transient digitizer with subpicosecond resolution based on the convolution of optical signals in a nonlinear integrated optics waveguide and on charge coupled devices detector arrays is demonstrated for optical signals.
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42.82.-m Integrated optics
42.65.-k Nonlinear optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Compression of femtosecond optical pulses

C. V. Shank, R. L. Fork, R. Yen, R. H. Stolen, and W. J. Tomlinson

Appl. Phys. Lett. 40, 761 (1982); http://dx.doi.org/10.1063/1.93276 (3 pages) | Cited 120 times

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We describe the generation and measurement of optical pulses as short as 30 fs. The pulses are produced using self‐phase modulation in a short 15‐cm optical fiber followed by a grating compressor.
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42.65.-k Nonlinear optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.81.-i Fiber optics
42.60.Fc Modulation, tuning, and mode locking

A theory of longitudinal modes in semiconductor lasers

Kam Y. Lau and Amnon Yariv

Appl. Phys. Lett. 40, 763 (1982); http://dx.doi.org/10.1063/1.93255 (3 pages) | Cited 10 times

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A theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities. The theory gives results consistent with observed longitudinal mode behavior in lasers with reduced facet reflectivity.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Femtosecond interferometry for nonlinear optics

J‐M. Halbout and C. L. Tang

Appl. Phys. Lett. 40, 765 (1982); http://dx.doi.org/10.1063/1.93277 (3 pages) | Cited 46 times

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A technique of time‐resolved interferometry capable of observing nonlinear optical phenomena down to 70 fs is presented. We report the direct observation of the rotational contributions to the nonlinear refractive index of molecular liquids using this technique. The subpicosecond dynamics of such a nonlinearity in CS2 are investigated. This technique can be readily extended to solids, in particular laser glasses.
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42.65.-k Nonlinear optics
07.60.Fs Polarimeters and ellipsometers

Energy absorption during pulsed‐laser annealing

P. S. Peercy and W. R. Wampler

Appl. Phys. Lett. 40, 768 (1982); http://dx.doi.org/10.1063/1.93278 (3 pages) | Cited 18 times

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Measurements of the energy absorbed in pulsed‐laser annealing of Si and Al are consistent with annealing by thermal processes and directly yield the absorption coefficients in both the solid and liquid phases. For semiconductors, the technique described further permits measurement of the time during the laser pulse at which melting occurs which, when used in conjunction with the energy absorbed in the solid and liquid phases, allows critical evaluation of theoretical models for the annealing process.
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61.72.-y Defects and impurities in crystals; microstructure
68.55.-a Thin film structure and morphology
64.70.D- Solid-liquid transitions

Narrow 87Rb hyperfine‐structure resonances in an evacuated wall‐coated cell

H. G. Robinson and C. E. Johnson

Appl. Phys. Lett. 40, 771 (1982); http://dx.doi.org/10.1063/1.93279 (3 pages) | Cited 28 times

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Examination of 87Rb δF = 1, δ‖mF‖ = 1 hyperfine resonances in a 200‐cm3 evacuated tetracontane wall‐coated Pyrex cell which has been sealed since 1968 shows remarkable Dicke‐narrowed sub‐Doppler Lorentzian line shapes with less than 11 Hz full width. This linewidth is 70 times narrower than that in buffer gas filled cells used in commercial Rb atomic frequency standards. The phase shift per wall collision is 0.058 radians/collision as derived from an observed wall‐induced hyperfine frequency shift of −52 Hz at a wall temperature of 26 °C.
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32.10.Fn Fine and hyperfine structure

Transmission of CO2 laser power by single‐crystal CsBr fibers

Y. Mimura and C. Ota

Appl. Phys. Lett. 40, 773 (1982); http://dx.doi.org/10.1063/1.93280 (3 pages) | Cited 11 times

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Transmission of a CO2 laser beam by single‐crystal CsBr fibers with losses of 0.3∼0.4 dB/m has been investigated. Transmission losses including the fiber losses and joint losses were less than 30% per meter. Using a 55‐W CO2 laser as a source power, a 47‐W continuous laser beam has been transmitted through 1‐mm‐diam fiber without any degradation of the fiber.
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42.81.-i Fiber optics
42.62.-b Laser applications
42.79.Gn Optical waveguides and couplers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

A comparison of ablative acceleration measurements

A. Raven, H. Azechi, M. Nakai, T. Matsuo, T. Yamanaka, and C. Yamanaka

Appl. Phys. Lett. 40, 776 (1982); http://dx.doi.org/10.1063/1.93256 (3 pages) | Cited 7 times

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Measurements of foil acceleration by streaked x‐ray shadowgraphy are compared with optical shadowgraphy and the ablation pressure measured by layer burnthrough. The latter two show a factor 3–4 discrepancy with the x‐ray shadowgraphy.
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52.40.Hf Plasma-material interactions; boundary layer effects
52.70.-m Plasma diagnostic techniques and instrumentation

Detection of CF2 radicals in a plasma etching reactor by laser‐induced fluorescence spectroscopy

P. J. Hargis and M. J. Kushner

Appl. Phys. Lett. 40, 779 (1982); http://dx.doi.org/10.1063/1.93257 (3 pages) | Cited 38 times

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Laser‐induced fluorescence spectroscopy was used to detect ground‐state CF2 radicals in 13.56‐MHz discharge plasmas sustained in C2F6 and CF4 in a plasma etching reactor. Measurements of the relative CF2(X) density in each plasma as a function of discharge power demonstrated that CF2 densities were significantly higher in the C2F6 plasma. These results provide the first direct observation of CF2(X) radicals in a plasma etching reactor.
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82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
32.50.+d Fluorescence, phosphorescence (including quenching)
52.80.Pi High-frequency and RF discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Microscopic fluorescent imaging of surface temperature profiles with 0.01 °C resolution

Paul Kolodner and J. Anthony Tyson

Appl. Phys. Lett. 40, 782 (1982); http://dx.doi.org/10.1063/1.93258 (3 pages) | Cited 37 times

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We have exploited the temperature‐dependent fluorescence quantum efficiency in europium thenoyltrifluoroacetonate (EuTTA) to make high‐resolution, noncontact temperature measurements on the surface of an integrated circuit chip. The EuTTA is spun onto the chip in a polymer film. The chip is illuminated with long‐wave UV light, and the orange fluorescence is imaged onto a charge‐coupled‐device (CCD) camera. Digital image processing completely removes the optical features in the image, leaving a purely thermal map of the surface temperature profile with a measured temperature resolution of better than 0.01 °C and a spatial resolution of 15 μm. With a different camera and optics, 1‐μm resolution should be possible, allowing thermal imaging of the smallest high‐speed integrated circuits.
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07.20.-n Thermal instruments and apparatus
05.70.Ce Thermodynamic functions and equations of state
42.30.Va Image forming and processing
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Strain of laser annealed silicon surfaces

R. J. Nemanich and D. Haneman

Appl. Phys. Lett. 40, 785 (1982); http://dx.doi.org/10.1063/1.93259 (3 pages) | Cited 10 times

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High resolution Raman scattering measurements have been carried out on pulse and continuous‐wave laser annealed silicon samples with various surface preparations. These included polished and ion‐bombarded wafers, and saw‐cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first‐order Raman active mode of Si, and was detectable in the range 10−2–10−3 in all except the polished samples.
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79.20.Ds Laser-beam impact phenomena
78.30.Hv Other nonmetallic inorganics
68.03.Cd Surface tension and related phenomena
65.40.De Thermal expansion; thermomechanical effects

Topographical characteristics of recrystallized silicon films by scanning cw laser irradiation

Toshiro Isu, Kazuyuki Sugahara, Tadashi Nishimura, Yoichi Akasaka, and Hidehumi Nakata

Appl. Phys. Lett. 40, 788 (1982); http://dx.doi.org/10.1063/1.93260 (3 pages) | Cited 5 times

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Chemical vapor deposited polycrystalline silicon on insulating layer has been crystallized by scanning cw Ar laser irradiation. Recrystallized films have several features in their topographical characteristics. A ridge with periodic humps along the trace of the laser beam scan has been observed remarkably for films thicker than 0.7 μm. It is considered that the surface feature is due to movements of molten silicon during the laser irradiation. In the case of silicon islands recrystallized by laser irradiation after local oxidation of surrounding polycrystalline silicon, a slight depression of a silicon film at the starting side of the island for the laser beam scan and swell at the counter end have been formed. These phenomena are explained by a movement of a molten silicon hump as well as in the case of continuous films.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystals

Marc Duseaux and Guy Jacob

Appl. Phys. Lett. 40, 790 (1982); http://dx.doi.org/10.1063/1.93261 (4 pages) | Cited 6 times

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Results of calculations on thermal stresses induced during pulling of GaAs ingots are reported. Comparison between these calculations and our experimental results shows that the dislocations nucleation in crystals during growth cannot be directly related to a constant value of the critical resolved shear stress (CRSS). According to experiments performed on other materials, it is concluded that the CRSS can strongly depend upon the initial state of the material, and particularly upon temperature and native defects concentration and mobility.
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81.10.Fq Growth from melts; zone melting and refining

Mode selection and intensity enhancement of x rays in crystals

Shih‐Lin Chang

Appl. Phys. Lett. 40, 793 (1982); http://dx.doi.org/10.1063/1.93262 (3 pages) | Cited 1 time

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Previously unreported intensity enhancement of x rays obtained by two‐mode excitation is observed on the direct incident beam of synchrotron radiation. The excitation utilizes the coherent interaction of a six‐beam Borrmann diffraction in a perfect silicon single crystal. The experiment provides a means of obtaining nearly divergenceless, monochromatic, spatially coherent, and intense x‐ray sources for x‐ray diffraction and imaging studies. Single mode excitation can be achieved by using a thick crystal.
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61.05.cc Theories of x-ray diffraction and scattering
61.05.C- X-ray diffraction and scattering

Diffusion of arsenic in polycrystalline silicon

B. Swaminathan, K. C. Saraswat, R. W. Dutton, and T. I. Kamins

Appl. Phys. Lett. 40, 795 (1982); http://dx.doi.org/10.1063/1.93263 (4 pages) | Cited 52 times

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The diffusion of arsenic in polycrystalline silicon films has been studied over the temperature range 750–950 °C and for grain sizes 210–510 nm. Rutherford backscattering spectrometry was used to measure the concentration profiles of arsenic, initially introduced into the polysilicon by ion implantation, after various annealing steps. The concentration profiles were found to be determined by a combination of two factors—the low diffusivity in the bulk of the rains and the much higher diffusivity in the grain boundaries. The diffusivity of arsenic in the grain boundaries was independent of concentration, with an activation energy of 3.9 eV, very close to that of the low‐concentration arsenic diffusivity in single‐crystal silicon. However, the value of the diffusivity was 8.6×104 exp(−3.9/kT)cm2/s, four orders of magnitude higher than the single‐crystal value. The diffusivity in the interior of the grains was the same as that in single‐crystal silicon.
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66.30.J- Diffusion of impurities

Photodeposition of Zn, Se, and ZnSe thin films

W. E. Johnson and L. A. Schlie

Appl. Phys. Lett. 40, 798 (1982); http://dx.doi.org/10.1063/1.93264 (4 pages) | Cited 14 times

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Thin films of zinc, selenium, and zinc‐selenide (nonstoichiometric) have been deposited at room temperature on various substrates by the photodissociation of zinc dimethyl and selenium dimethyl with an incoherent light source. Large thicknesses (∼6000Å) and areas with 2‐cm cross diameters have been produced. This low‐temperature technique may provide a drastically improved method for depositing laser mirror thin films that have much higher quality and purity levels not heretofore available by the more conventional methods such as vacuum deposition, electron or ion beams.
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68.55.-a Thin film structure and morphology
82.50.Hp Processes caused by visible and UV light
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low noise GaAs metal‐semiconductor field‐effect transistor made by ion implantation

M. Feng, V. K. Eu, H. Kanber, E. Watkins, J. M. Schellenberg, and H. Yamasaki

Appl. Phys. Lett. 40, 802 (1982); http://dx.doi.org/10.1063/1.93265 (3 pages) | Cited 4 times

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Low noise GaAs metal‐semiconductor field‐effect transitors (MESFET’s) have been made by direct ion implantation into high pressure liquid encapsulated Czochralski (HPLEC) undoped substrates and unintentionally doped high resistivity buffer layers. A noise figure of 1.3 dB with 10.3‐dB associated gain has been achieved at 12 GHz, and a 2.2‐dB noise figure with 7.4‐dB associated gain has been measured at 18 GHz with a 0.6‐μm gate length by 300‐μm gate width FET device, fabricated from a HPLEC undoped substrate. Comparable dc and rf performance has also been achieved for devices fabricated from undoped buffer layers. Equivalent circuit elements have been evaluated in an effort to understand the critical parameters necessary to achieve these results.
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85.30.Tv Field effect devices
72.70.+m Noise processes and phenomena

Transient annealing of selenium‐implanted gallium arsenide using a graphite strip heater

R. L. Chapman, John C. C. Fan, J. P. Donnelly, and B‐Y. Tsaur

Appl. Phys. Lett. 40, 805 (1982); http://dx.doi.org/10.1063/1.93266 (3 pages) | Cited 23 times

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A graphite strip heater has been used for transient annealing, at temperatures of 900–1140 °C, of GaAs wafers implanted at 300 °C with a 1×1015 cm−2 dose of 400‐keV Se+ ions. The electrical activation of the implant produced by annealing at 1140 °C for 10 s yields a sheet resistivity of 25 Ω/☒ and sheet carrier concentration of 1.8×1014 cm−2, compared with values of 35 Ω/☒ and 1.1×1014 cm−2 obtained by conventional furnace annealing at 950 °C for 30 min.
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72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Quenching and enhancement of the exciton and subband‐gap absorption in GaAs:Cr using two‐beam transverse acoustoelectric voltage spectroscopy

B. Davari and P. Das

Appl. Phys. Lett. 40, 807 (1982); http://dx.doi.org/10.1063/1.93267 (3 pages) | Cited 7 times

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Transverse acoustoelectric voltage (TAV) spectroscopy of GaAs:Cr samples is performed. Samples are illuminated by two monochromatic beams. The characteristic bound exciton peak is observed at temperatures below 200 °K. At lower temperatures a maximum around 1.3 eV (energy of the incident beam) can also be observed. The excitonic peak can be enhanced or quenched upon shining a 1.38‐ or 1‐eV bias light respectively. The 1.3‐eV peak of the TAV spectrum can be completely quenched by illuminating the sample with the 1‐eV bias light, whereas the 1.38‐eV bias light does not have an appreciable effect on this peak. The theoretical model suggests the presence of a band of donor level at about 1.3 eV below the conduction band and a band of acceptor level at 1 eV above the valence band.
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71.35.-y Excitons and related phenomena
72.50.+b Acoustoelectric effects

Interface‐state generation during avalanche injection of electrons from Si into SiO2

Toshio Sunaga, S. A. Lyon, and Walter C. Johnson

Appl. Phys. Lett. 40, 810 (1982); http://dx.doi.org/10.1063/1.93268 (2 pages) | Cited 7 times

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We have studied at both liquid‐nitrogen temperature and room temperature the development of the interface states that are generated in the Si‐SiO2 system when electrons are avalanche injected from the Si into the SiO2. Differences in development at the two temperatures indicate that the states are of two types. One appears immediately at liquid‐nitrogen temperature and is probably identical with the states previously found to occur as the result of photoinjecting electrons through the interface. The other requires thermal energy to develop. These states may be associated with positive charge trapped at the interface and are probably related to those observed after radiation damage.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Threshold switching in hydrogenated amorphous silicon

W. den Boer

Appl. Phys. Lett. 40, 812 (1982); http://dx.doi.org/10.1063/1.93269 (2 pages) | Cited 6 times

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Threshold switching is observed in n+‐i‐n+ sandwich structures of hydrogenated amorphous silicon after an initial forming process. At the threshold voltage the device switches from a low conductance to a high conductance state. The devices remain stable after more than 109 switching operations at a pulse frequency of 10 kHz. It is suggested that in the high conductance state filamentary conduction occurs in a permanent altered region created during the forming process.
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72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Sx Metal-semiconductor-metal structures
72.20.Ht High-field and nonlinear effects

Onset of diffusion‐drift emission regime and the transition from exponential to linear current‐voltage characteristic of triangular barrier semiconductor structures

F. A. Buot, J. A. Krumhansl, and J. B. Socha

Appl. Phys. Lett. 40, 814 (1982); http://dx.doi.org/10.1063/1.93270 (3 pages) | Cited 8 times

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Using a very simple physical model of charge motion in triangular barrier structure as a Brownian motion over a potential barrier, we show that there are essentially four regimes of operation, with increasing bias voltage, in these device structures. These are (a) the thermionic emission regime, (b) the diffusion emission regime, (c) the diffusion‐drift emission regime, and (d) the linear current‐voltage (I‐V) characteristic, drift emission regime. The diffusion emission regime occurs only for a particular value of the applied voltage and marks the onset of diffusion‐drift emission regime. This simple physical model gives excellent agreement with the experimental data, particularly under forward bias.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Diffused epitaxial GaAlAs‐GaAs heterojunction bipolar transistor for high‐frequency operation

D. Ankri, A. Scavennec, C. Besombes, C. Courbet, F. Heliot, and J. Riou

Appl. Phys. Lett. 40, 816 (1982); http://dx.doi.org/10.1063/1.93271 (3 pages) | Cited 9 times

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A GaAlAs‐GaAs heterojunction bipolar transistor (HBT) has been realized by liquid phase epitaxy with a very low emitter doping. A diffused epitaxial structure has been developed. Transition frequencies close to 5 GHz for IC = 10 mA have been measured, and high transition frequency has been obtained at low current ( fT = 1.3 GHz for IC = 1 mA) in spite of a rather large emitter base area (SEB∼4.10−5 cm2). These figures are the best reported so far for HBT’s and are very promising for low‐power high‐speed logic.
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85.30.Pq Bipolar transistors
72.80.Ey III-V and II-VI semiconductors

Ar+ laser induced chemical vapor deposition of Si from SiH4

D. Bäuerle, P. Irsigler, G. Leyendecker, H. Noll, and D. Wagner

Appl. Phys. Lett. 40, 819 (1982); http://dx.doi.org/10.1063/1.93272 (3 pages) | Cited 48 times

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For the first time polycrystalline silicon has been grown by using the visible light of an Ar+ laser for pyrolytical decomposition of SiH4. With a laser irradiance of 3600 W/mm2 a deposition rate of 30 μm/s was obtained. The temperature dependence of the deposition rate was investigated. The kinetically controlled regime is characterized by an activation energy of 44±4 kcal/mole.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Absorption measurements at high pressure on AlAs‐AlxGa1−xAs‐GaAs superlattices

S. W. Kirchoefer, N. Holonyak, K. Hess, D. A. Gulino, H. G. Drickamer, J. J. Coleman, and P. D. Dapkus

Appl. Phys. Lett. 40, 821 (1982); http://dx.doi.org/10.1063/1.93273 (4 pages) | Cited 25 times

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Absorption data (300 K) are presented on AlxGa1−xAs‐GaAs and AlAs‐GaAs superlattices subjected to hydrostatic pressure (0–10 kbar). These data show that the confined‐particle transitions, which partition and ’’label’’ the Γ energy band high above the band edge (as high as 400 meV or well above the L minima), all move with the same pressure coefficient (11.5 meV/kbar). A weaker effect of the L than the X indirect minima on the absorption is observed.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
62.50.-p High-pressure effects in solids and liquids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
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