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15 Nov 1982

Volume 41, Issue 10, pp. 903-1007

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Narrow stripe AlGaAs lasers using double current confinement

H. Blauvelt, S. Margalit, and A. Yariv

Appl. Phys. Lett. 41, 903 (1982); http://dx.doi.org/10.1063/1.93349 (3 pages) | Cited 1 time

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Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltback‐growth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Nonlinear optics of long range surface plasmons

G. I. Stegeman, J. J. Burke, and D. G. Hall

Appl. Phys. Lett. 41, 906 (1982); http://dx.doi.org/10.1063/1.93350 (3 pages) | Cited 56 times

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We analyze codirectional and counterpropagating second harmonic generation, degenerate four‐wave mixing, and intensity‐dependent refractive index phenomena based on surface plasmon polaritons guided by thin metal films. Promising cross sections are predicted for three out of the four cases.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Optical bistability in nematic films utilizing self‐focusing of light

I. C. Khoo

Appl. Phys. Lett. 41, 909 (1982); http://dx.doi.org/10.1063/1.93351 (3 pages) | Cited 24 times

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Optical bistable operation in the transmission characteristics of a nematic liquid crystal film is observed. The mechanism for the bistability is the self‐focusing of light via optically induced molecular reorientations. The process occurs at very modest cw input laser power on the order of 0.3 W (intensity of ∼500 W/cm2) in a 60‐μm‐thick sample.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Lc Birefringence
42.60.Fc Modulation, tuning, and mode locking

Very narrow graded‐barrier single quantum well lasers grown by metalorganic chemical vapor deposition

D. Kasemset, C. S. Hong, N. B. Patel, and P. D. Dapkus

Appl. Phys. Lett. 41, 912 (1982); http://dx.doi.org/10.1063/1.93352 (3 pages) | Cited 16 times

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Graded‐barrier GaAs‐GaAlAs single quantum well lasers have been fabricated, utilizing the graded‐index separate confinement heterostructure to confine carriers and optical field. Very low threshold current densities have been observed down to a well size of 75 Å. The lowest threshold current density observed is 240 A/cm2 for a 100‐Å heavily doped quantum well laser. This experimental value agrees very well with the calculated threshold current density obtained from detailed band calculation and is attributed to the enhanced gain‐current characteristic in these quantum well structures.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Remote temperature measurement using an acoustic probe

D. Husson, S. D. Bennett, and G. S. Kino

Appl. Phys. Lett. 41, 915 (1982); http://dx.doi.org/10.1063/1.93334 (3 pages) | Cited 2 times

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We describe the preliminary results of a novel method for the noninvasive measurement of temperature distribution within a solid body using an acoustic beam. Applications of such a scheme could include the control and assessment of tumor treatment by hyperthermia in which small regions of tissue deep within the body are heated by either acoustic or microwave energy. A major practical difficulty in such a process is the accurate determination of the temperature distribution. The scheme we describe in this letter appears to be capable of detecting temperature differences with a sensitivity of a few tenths of a degree centigrade and with a spatial definition of the order of 1 cm3. The basic technique in which the phase differences between two colinear acoustic beams, one broad and collimated and the other focused, are compared electronically, is described, and results obtained with a tissue phantom are used to illustrate the viability of the approach.
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43.80.Ev Acoustical measurement methods in biological systems and media
43.80.Vj Acoustical medical instrumentation and measurement techniques
87.57.-s Medical imaging
87.63.-d Non-ionizing radiation equipment and techniques
87.85.Pq Biomedical imaging
43.80.Qf Medical diagnosis with acoustics

Semihydrodynamic model for ion separation in a fast pinch

G. Barak and N. Rostoker

Appl. Phys. Lett. 41, 918 (1982); http://dx.doi.org/10.1063/1.93335 (3 pages) | Cited 19 times

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It has been found experimentally that if a mixture of hydrogen and argon is pinched, a separation between the two components occurs very early during the implosion phase; the light ions move faster to the center, leaving the heavier ions behind. A model is presented which describes the dynamics of the pinch and explains the separation. The collisional electron gas is treated as a fluid and the ions are treated as free particles accelerated by the collective electrostatic field set up by the flow. The set of equations describing such a flow is presented and some simple problems are worked out in order to show that a separation is possible. These problems include the ion sound wave, the general flow with impurities, and the shock wave structure.
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52.55.Ez Theta pinch
52.30.-q Plasma dynamics and flow

One‐dimensional isentropic compression measurements of multiply loaded polymethylmethacrylate

Z. Rosenberg and Y. Partom

Appl. Phys. Lett. 41, 921 (1982); http://dx.doi.org/10.1063/1.93336 (3 pages) | Cited 5 times

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We present direct measurements of stress, strain, and temperature in multiply shocked polymethylmethacrylate (PMMA) discs. From these measurements we determine an approximation for the main compression isentrope of PMMA in the 0–16‐GPa range. The experimental technique is based on embedding the three types of gauges (stress, strain, and temperature) in a thin PMMA disc and shock it in a series of up‐going reverberations. We also show that from the measured temperature and strain increments one can calculate the volume dependence of the Grueneisen parameter in the relevant compression range.
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62.65.+k Acoustical properties of solids
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Fracto‐emission from pentaerythritol tetranitrate and cyclotetramethylene tetranitramine single crystals

M. H. Miles and J. T. Dickinson

Appl. Phys. Lett. 41, 924 (1982); http://dx.doi.org/10.1063/1.93337 (3 pages) | Cited 13 times

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Single crystals of the explosives pentaerythritol tetranitrate (PETN) and cyclotetramethylene tetranitramine (HMX) were fractured in vacuum while viewed by particle detectors strongly biased on separate positive and negative charge. Particles were detected on both detectors during and following fracture. Previous results on polymers suggest we are detecting electrons and positive ions. The observation of fracto‐emission from these molecular crystals implies that crack propagation in such materials can break intramolecular bonds and the subsequent chemical reactions that lead to particle emission can continue for several minutes on the freshly created fracture surfaces.
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79.75.+g Exoelectron emission
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
62.50.-p High-pressure effects in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Subsurface‐structure determination using photothermal laser‐beam deflection

Grover C. Wetsel and F. Alan McDonald

Appl. Phys. Lett. 41, 926 (1982); http://dx.doi.org/10.1063/1.93338 (3 pages) | Cited 15 times

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Photothermal imaging using laser‐beam deflection is shown to be a successful means of detecting subsurface structure in solids. Experimental data for known and unknown subsurface structures are reported. The existing theory agrees well with data on broad subsurface structures, but small subsurface structures produce signal variations which are better represented by a subsurface thermal contact resistance. The first photothermal‐image characterization of a microscopic, unknown subsurface defect is presented.
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07.60.Pb Conventional optical microscopes
68.37.-d Microscopy of surfaces, interfaces, and thin films
05.70.Ce Thermodynamic functions and equations of state

Depth distributions and range parameters for He implanted in Si and GaAs

R. G. Wilson, V. R. Deline, and C. G. Hopkins

Appl. Phys. Lett. 41, 929 (1982); http://dx.doi.org/10.1063/1.93339 (3 pages) | Cited 18 times

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Depth distributions for He implanted in Si and GaAs measured by secondary ion mass spectrometry (SIMS) are reported as a function of ion energy from 20 to 300 keV at 1016 cm−2 fluence. The range parameters and Pearson IV moments are determined and tabulated. The ranges of 300‐keV He ions in both Si and GaAs are about 1.4 μm but the width of the profiles is greater for GaAs (σ=0.273 μm) than for Si (σ=0.140 μm). The profiles for all energies in both materials exhibit significant negative skewness (γ1≊−1.65). The SIMS detection limit for He is about 1018 cm−3 in both Si and GaAs. Implanted He depth distributions do not redistribute until an annealing temperature of 350 °C is reached.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Clausius–Mossotti‐type approximation for elastic moduli of a three‐dimensional, two‐component composite

Yacov Kantor and David J. Bergman

Appl. Phys. Lett. 41, 932 (1982); http://dx.doi.org/10.1063/1.93340 (3 pages) | Cited 4 times

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A new approach to the problem of calculating the bulk elastic moduli of two‐component composites with a specified microgeometry is applied to the problem of a 3‐D system of circular‐cylindrical inclusions with cubic symmetry. Explicit expressions, valid at least up to and including terms of order p2 (where p is the volume fraction of the inclusions), are obtained for the bulk compressibility and the two shear moduli. The approximation used, which is the leading order in a systematic expansion of the bulk moduli, is related to the Clausius–Mossotti approximation of electrostatics.
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62.20.D- Elasticity
46.25.-y Static elasticity

Study of the electronic structure of amorphous silicon using reverse‐recovery techniques

Marvin Silver, N. C. Giles, Eric Snow, M. P. Shaw, V. Cannella, and David Adler

Appl. Phys. Lett. 41, 935 (1982); http://dx.doi.org/10.1063/1.93341 (3 pages) | Cited 11 times

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We have carried out a series of reverse‐recovery experiments on pin diodes of amorphous‐Si:F:H of thicknesses up to 3.5 μm under pulsed high‐level injection conditions. No evidence for charge storage was obtained. Our results indicate that the room‐temperature band mobility for electrons moving near the mobility edge in a‐Si:F:H is larger than 100 cm2/Vs. In addition, our data suggest that either an intrinsic or induced gap exists in the density of localized states below the conduction‐band mobility edge, in surprising contrast with conclusions deduced from a variety of recent experiments.
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72.80.Ng Disordered solids
78.40.Fy Semiconductors
71.23.-k Electronic structure of disordered solids

Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication

D. H. Lowndes, J. W. Cleland, W. H. Christie, R. E. Eby, G. E. Jellison, J. Narayan, R. D. Westbrook, R. F. Wood, J. A. Nilson, and S. C. Dass

Appl. Phys. Lett. 41, 938 (1982); http://dx.doi.org/10.1063/1.93342 (3 pages) | Cited 8 times

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A pulsed ultraviolet excimer laser (XeCl, 308‐nm wavelength, ∼41‐ns pulse duration) has been sucessfully used for laser annealing of both boron‐ and arsenic‐implanted silicon, and for formation of high quality p‐n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion
81.20.-n Methods of materials synthesis and materials processing

Four‐coefficient weak‐field magnetoresistance measurements on (111)‐oriented epitaxial n‐type PbTe films at 4.2 K

R. S. Allgaier, R. J. Abbundi, Bland Houston, J. L. Davis, A. Martinez, and J. B. Restorff

Appl. Phys. Lett. 41, 941 (1982); http://dx.doi.org/10.1063/1.93343 (3 pages) | Cited 5 times

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A recently developed four‐coefficient weak‐field magnetoresistance measurement technique was applied to (111)‐oriented n‐type PbTe films at 300, 77, and 4.2 K. In three out of four films studied, the results at 4.2 K exhibit unique characteristics—an essentially zero longitudinal magnetoresistance and hexagonal electronic symmetry—which indicate that all carriers have been transferred to one ellipsoid‐of‐revolution valley of the multivalley PbTe conduction band. This transfer results from substrate‐induced strain, and it leads to conductivity anisotropies (σ∥/σ⊥) from 6 to 16. The large sample‐to‐sample scatter in this ratio is tenatively ascribed to a strain which varies across the film thickness. Random inhomogeneities cannot account for the scatter, since they would eliminate the zero longitudinal magnetoresistance found in all three samples.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Jc Other crystalline inorganic semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Channeling photodiode: A new versatile interdigitated p‐n junction photodetector

F. Capasso, R. A. Logan, W. T. Tsang, and J. R. Hayes

Appl. Phys. Lett. 41, 944 (1982); http://dx.doi.org/10.1063/1.93344 (3 pages) | Cited 8 times

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We report on the operation of the first channeling photodetector. This device can be operated as an ultrahigh sensitivity photocapacitive detector; large capacitance variations (≂1 pF) have been induced by very low power levels (≂20 pW). In addition this structure may be used as a low punch through voltage pin photodiode with an ultralow capacitance (≂0.06 pF) largely independent of the detector area and of the doping level of the layers. Finally this device represents the first step towards the implementation of the recently disclosed low noise avalanche photodiode with separated electron and hole avalanche regions.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide

J. M. Ballingall and C. E. C. Wood

Appl. Phys. Lett. 41, 947 (1982); http://dx.doi.org/10.1063/1.93345 (3 pages) | Cited 47 times

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Silicon‐doped GaAs has been grown simultaneously on (100), (110), and (111)B oriented GaAs substrates by molecular beam epitaxy. For constant Si, Ga, and As4 fluxes the surface morphology of the (110) and (111)B faces degraded with increasing substrate temperature above ∼500 °C. (100) films had an n‐type free‐electron concentration of 5×1016 cm−3 independent of substrate temperature. Films on (110) substrates were p type when grown above ∼550 °C and n type below ∼550 °C whereas (111)B films were highly resisitive under most growth conditions. Low‐temperature (4 K) photoluminescence showed good correlation between the Si acceptor peak heights and the compensation ratios derived from electrical measurements.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors

Bipolar transistor action in ion implanted diamond

J. F. Prins

Appl. Phys. Lett. 41, 950 (1982); http://dx.doi.org/10.1063/1.93346 (3 pages) | Cited 73 times

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Using a natural type IIb diamond, which is p‐type semiconducting, as a substrate material, and implanting this diamond with carbon ions to induce n‐type regions, diode and bipolar transistor action could be obtained. Owing to the geometrical positions of the collector, base, and emitter, which in this case were lateral to the surface, very low current gain was obtained. However, the results indicate that an improvement in the geometry will probably lead to a diamond transistor of high gain.
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85.30.Pq Bipolar transistors
72.80.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ei Rectification

Meaning of the photovoltaic band gap for amorphous semiconductors

E. Yablonovitch, T. Tiedje, and H. Witzke

Appl. Phys. Lett. 41, 953 (1982); http://dx.doi.org/10.1063/1.93353 (3 pages) | Cited 2 times

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We introduce the concept of a photovoltaic band gap Epvg for amorphous solar cells. This is the minimum photon energy thermodynamically required for the generation, of two free carriers in an operating solar cell. For hydrogenated amorphous silicon the photovoltaic band gap is 1.57 eV at 1‐sun illumination.
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72.80.Ng Disordered solids
84.60.Jt Photoelectric conversion

Electron irradiation induced deep levels in p‐InP

A. Sibille and J. C. Bourgoin

Appl. Phys. Lett. 41, 956 (1982); http://dx.doi.org/10.1063/1.93354 (3 pages) | Cited 44 times

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Room‐temperature 1‐MeV electron irradiations have been performed on p‐type epitaxial InP and the induced defects have been investigated by deep level transient spectroscopy in the range 90–300 K. Five hole traps created by the irradiations were detected, corresponding to a total introduction rate of ∼1 cm−1, much higher than what had been found in n‐InP. The dominant traps anneal out at 360–410 K.
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78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
61.72.J- Point defects and defect clusters

Highly conductive and transparent zinc oxide films prepared by rf magnetron sputtering under an applied external magnetic field

T. Minami, H. Nanto, and S. Takata

Appl. Phys. Lett. 41, 958 (1982); http://dx.doi.org/10.1063/1.93355 (3 pages) | Cited 58 times

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Highly conductive films of zinc oxide have been prepared by rf magnetron sputtering deposition on a substrate suspended perpendicular to the target under an applied external magnetic field in pure argon gas. It is shown that a film with low resistivity (5×10−4 Ω cm) and high optical transmission (>85% between 400 and 800 nm) can be produced on low‐temperature substrates with a relatively high deposition rate. The sheet resistance and Hall mobility of the film are 10 Ω/☒ and 120 cm2/Vs respectively. The high conductivity is achieved by an increase in Hall mobility due to improved crystallization.
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72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface

P. Parayanthal, Fred H. Pollak, and J. M. Woodall

Appl. Phys. Lett. 41, 961 (1982); http://dx.doi.org/10.1063/1.93356 (3 pages) | Cited 8 times

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We have used Raman spectroscopy to characterize Ga1−xAlxAs/GaAs heterojunctions (x≊0.9) grown by liquid phase epitaxy. The GaAs substrate had a (100) surface and the Ga1−xAlxAs epilayer was about 5000 Å thick. Signals were observed from both the Ga1−xAlxAs epilayer and the GaAs substrate at the interface. Information about the quality of the epilayer can be gained from several aspects of the spectrum including linewidths, violations of polarization selection rules (e.g., observation of symmetry forbidden TO mode), and the amplitude of the disorder‐activated LA mode (DALA). These results are correlated with the properties of the substrate and growth condition. In addition the signal observed from the GaAs substrate revealed interesting features such as coupled plasmon modes and hence yielded information about band‐ bending and dopant diffusion at the interface.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.Jw Organic compounds, polymers
81.40.Tv Optical and dielectric properties related to treatment conditions

Evidence for Auger and free‐carrier losses in GaInAsP/InP lasers: Spectroscopy of a short wavelength emission

A. Mozer, K. M. Romanek, W. Schmid, M. H. Pilkuhn, and E. Schlosser

Appl. Phys. Lett. 41, 964 (1982); http://dx.doi.org/10.1063/1.93371 (3 pages) | Cited 23 times

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We report the observation of two high‐energy emission bands near 1.31 eV in Ga0.29In0.71As0.61P0.39 /InP laser diodes. One emission band is associated with recombination in the InP due to carrier leakage from the active layer. A second, more important emission band with an energy close to E0+Δ0 is associated with recombination of holes in the split‐off valence band and electrons in the conduction band. The split‐off valence band is significantly populated by Auger recombination and intervalence band absorption. From the dependence of the integrated E0+Δ0 luminescence intensity on injection current (below threshold) we determine an Auger coefficient for holes of C≂5×10−29 cm6 s−1 at T=300 K.
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42.55.Px Semiconductor lasers; laser diodes
42.62.-b Laser applications
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Self‐annealed ion implanted solar cells

E. Gabilli, R. Lotti, P. G. Merli, R. Nipoti, and P. Ostoja

Appl. Phys. Lett. 41, 967 (1982); http://dx.doi.org/10.1063/1.93357 (2 pages) | Cited 11 times

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Self‐annealing implantation with dopant ions has been successfully applied to the fabrication of silicon solar cells. Experimental conditions as well as solar cell parameters are presented and discussed.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Noninvasive analysis of InP surfaces using Hg‐InP Schottky barrier diodes

L. D. Pressman, S. R. Forrest, W. A. Bonner, and L. G. Van Uitert

Appl. Phys. Lett. 41, 969 (1982); http://dx.doi.org/10.1063/1.93358 (3 pages) | Cited 4 times

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Capacitance‐voltage characteristics of Hg‐InP Schottky barrier diodes are compared with those of Au‐InP Schottky diodes. We show that the Hg‐InP Schottky diode may be used as a sensitive, relatively nondestructive probe of the InP surface. In contrast, electronic analysis of Au‐InP Schottky barrier diodes yields information about the InP surface after it has been altered in the evaporation process. Using Hg‐InP Schottky diodes, thin insulating layers have been detected on InP exposed to wet chemical etchants, and surface charge has been detected on InP exposed to very low energy Ar plasmas.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Epitaxial growth of Fe on GaAs by metalorganic chemical vapor deposition in ultrahigh vacuum

R. Kaplan and N. Bottka

Appl. Phys. Lett. 41, 972 (1982); http://dx.doi.org/10.1063/1.93359 (3 pages) | Cited 19 times

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Fe epitaxial films have been grown on GaAs(100) by thermal dissociation of Fe (CO)5 in a high vacuum environment. In situ low‐energy electron diffraction (LEED) and Auger spectroscopy have been used to study the MOCVD process and to characterize the growing films. Excellent film quality is evidenced by the observed small ferromagnetic resonance linewidth.
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68.55.-a Thin film structure and morphology
75.50.Bb Fe and its alloys
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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