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1 Dec 1982

Volume 41, Issue 11, pp. 1013-1105

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Far‐infrared surface plasmon coupling with overcoated gratings

R. J. Seymour, E. S. Koteles, and G. I. Stegeman

Appl. Phys. Lett. 41, 1013 (1982); http://dx.doi.org/10.1063/1.93393 (3 pages) | Cited 3 times

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Calculated and experimental results are presented for coupling bulk electromagnetic waves to surface electromagnetic waves using overcoated gratings at 118.8 μ. A coupling efficiency of 8.7% is reported.
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78.66.Bz Metals and metallic alloys
84.40.Ba Antennas: theory, components and accessories
42.79.Dj Gratings

Temperature dependence of silicon Raman lines

Raphael Tsu and Jesus Gonzalez Hernandez

Appl. Phys. Lett. 41, 1016 (1982); http://dx.doi.org/10.1063/1.93394 (3 pages) | Cited 58 times

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The one‐phonon and two‐phonon Raman spectra have been measured in the temperature range 20–900 °C. The rate of decrease of the normalized frequencies with increase of temperature for the zone center, TO at L and TA at X, is 5.4×10−5/°C, while for TO at X and TA at L is lower, being 3.6×10−5/°C. We have also found that the relative intensity of Stokes and anti‐Stokes components of the Γ‐point optical phonon deviates significantly from the value involving only the phonon occupation number, particularly at high temperatures. The decrease of the Γ25′ phonon from 521 cm−1 at 20 °C to 493 cm−1 at 900 °C should provide an unambiguous determination of the surface temperature due to laser heating.
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78.30.Hv Other nonmetallic inorganics

Influence of hot carriers on the temperature dependence of threshold in 1.3‐μm InGaAsP lasers

B. Etienne, Jagdeep Shah, R. F. Leheny, and R. E. Nahory

Appl. Phys. Lett. 41, 1018 (1982); http://dx.doi.org/10.1063/1.93395 (3 pages) | Cited 10 times

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Carrier heating effects are shown to contribute significantly to temperature sensitivity of threshold current in InGaAsP 1.3‐μm lasers. For the empirical expression Jth∼J0 exp(T/T0), a single value of T0=90 K describes the data for 100 K<TL<350 K when T is taken to be the carrier temperature. This result is in contrast to the variation in T0 from 90 to 60 K found when T is taken to be the lattice temperature.
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42.55.Px Semiconductor lasers; laser diodes

Pseudo‐optical absorption spectra in HgCl2 and HgBr2 from 4 to 14 eV

David Spence, R.‐G. Wang, and M. A. Dillon

Appl. Phys. Lett. 41, 1021 (1982); http://dx.doi.org/10.1063/1.93396 (3 pages) | Cited 13 times

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Using a high‐resolution electron‐impact energy‐loss spectrometer we have measured the energy‐loss spectra of electrons scattered near the forward direction from HgCl2 and HgBr2, for incident energies of 200 eV and energy‐loss between 4 and 14 eV. Under these conditions the energy‐loss spectra correspond closely to optical‐absorption spectra. In addition to the well known 1Πu and 1∑+u absorption bands, we observe many new energy‐loss processes beginning at 7.9 eV in HgBr2 and 8.60 eV in HgCl2. The relative cross sections and energies of these processes are in excellent agreement with those inferred as being necessary to account for discharge and fluorescence measurements in e‐beam sustained mercuric bromide lasers.
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33.70.-w Intensities and shapes of molecular spectral lines and bands
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
34.50.-s Scattering of atoms and molecules
34.80.Gs Molecular excitation and ionization

Theory of optical mixing by mobile carriers in superlattices

W. L. Bloss and L. Friedman

Appl. Phys. Lett. 41, 1023 (1982); http://dx.doi.org/10.1063/1.93397 (3 pages) | Cited 29 times

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The third order nonlinear susceptibility χ(3) caused by band nonparabolicity is investigated for gallium arsenide‐gallium aluminum arsenide superlattices. Optimization of well width, superlattice periodicity, and barrier height give rise to large nonparabolicities which produce nonlinear susceptibilities comparable to those found in indium antimonide and at least two orders of magnitude larger than bulk gallium arsenide.
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42.65.-k Nonlinear optics
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

High quantum efficiency InGaAsP/InP lasers

N. Tamari, M. Oron, B. I. Miller, A. A. Ballman, R. E. Nahory, R. J. Martin, H. Shtrikman, and L. A. Coldren

Appl. Phys. Lett. 41, 1025 (1982); http://dx.doi.org/10.1063/1.93398 (3 pages) | Cited 1 time

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Liquid phase epitaxial grown Cd‐doped InGaAsP/InP double‐heterostructure stripe lasers were found to yield very high external differential quantum efficiency, ηext ∼74% in relatively long cavity lasers compared to that of our Zn‐doped ones. Since Cd was found to diffuse only slightly into the active layer, the high ηext as well as the lower threshold current in the Cd‐doped lasers are attributed to lower concentration of nonradiative recombination centers. The broad area lasers have lower ηext than the respective stripe lasers. Moreover, ηext is insensitive to the heat sink temperature in the range 20–70 °C in the stripe lasers while it drops considerably in the broad area ones.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes

Bistability observed in a Fabry–Perot interferometer with quadratic nonlinear medium

Berthold Wedding and Dieter Jäger

Appl. Phys. Lett. 41, 1028 (1982); http://dx.doi.org/10.1063/1.93399 (3 pages) | Cited 14 times

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Bistability due to a second‐order dispersive nonlinearity in a Fabry–Perot resonator is studied. The experiments are performed on a nonlinear transmission line resonator. Nonlinear resonance curves, bistability as well as instabilities, and the generation of harmonics are observed. The theoretical treatment of bistability is based upon a nonlinear dispersion relation as derived from an inspection of two interacting harmonics or, in a second approach, of propagating solitons.
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07.60.Ly Interferometers

Continuous wave high‐power, high‐temperature semiconductor laser phase‐locked arrays

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 41, 1030 (1982); http://dx.doi.org/10.1063/1.93382 (3 pages) | Cited 15 times

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Continuous wave GaAlAs semiconductor laser arrays are reported to emit 585‐mW/facet cw optical output power at room temperature. The lasers operate over 100 °C with output powers in excess of 200 mW/facet cw. Laser thresholds are as low as 130 mA, differential quantum efficiencies exceed 60% for some devices, and very high total power conversion efficiencies of over 20% are observed.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Picosecond, tunable ArF∗ excimer laser source

H. Egger, T. S. Luk, K. Boyer, D. F. Muller, H. Pummer, T. Srinivasan, and C. K. Rhodes

Appl. Phys. Lett. 41, 1032 (1982); http://dx.doi.org/10.1063/1.93383 (3 pages) | Cited 22 times

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A 40‐mJ ArF∗ laser with pulse duration ∼10 ps and spatial and spectral properties close to the transform limits is described. Substantial extraction of the available energy from the final amplifier is demonstrated, a fact providing direct evidence against the presence of significant nonlinear losses in the amplifying medium up to an intensity of ∼1 GW/cm.2
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Frequency locking of an InGaAsP semiconductor laser to the first overtone vibration‐rotation lines of hydrogen fluoride

Shizuo Yamaguchi and Masao Suzuki

Appl. Phys. Lett. 41, 1034 (1982); http://dx.doi.org/10.1063/1.93384 (3 pages) | Cited 9 times

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The first overtone vibration‐rotation lines of hydrogen fluoride have been observed around the wavelength region of 1.3 μm by using a current‐tunable InGaAsP semiconductor laser operated at the temperature range from −24 °C to +24 °C. The laser frequency has been locked to one of the R‐branch lines with the stability of 2.0×10−10≥σ(2,τ)≥7.9×10−11 at the averaging time between 1 and 240 s.
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42.62.-b Laser applications
42.72.-g Optical sources and standards
42.55.Px Semiconductor lasers; laser diodes

Operating efficiencies in pulsed carbon dioxide lasers

A. L. S. Smith and J. Mellis

Appl. Phys. Lett. 41, 1037 (1982); http://dx.doi.org/10.1063/1.93385 (3 pages) | Cited 7 times

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Computer models of the CO2‐N2‐He laser system usually predict that 20%–33% of the discharge energy should be available as radiation output. Using a comprehensive kinetics model to study vibrational temperatures and stored energies, we find a deterioration in laser efficiency with increasing input energy, due to electron superelastic losses during the excitation pulse. Experimental observations support the calculated vibrational temperatures and likewise our predicted 8%–12% yield efficiency at optimum excitation is in good agreement with the values realized in working lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

High‐power individually addressable monolithic array of constricted double heterojunction large‐optical‐cavity lasers

D. Botez, J. C. Connolly, D. B. Gilbert, M. G. Harvey, and M. Ettenberg

Appl. Phys. Lett. 41, 1040 (1982); http://dx.doi.org/10.1063/1.93386 (3 pages) | Cited 12 times

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Ten‐unit individually addressable arrays of constricted double heterojunction large‐optical‐cavity (CDH‐LOC) diode lasers have been realized by one‐step liquid phase epitaxy over channeled substrates, and by bonding to ten‐electrode BeO submounts. Maximum overall powers of 320 mW in cw operation and 3.6 W in pulsed operation (100 ns, 1 kHz) have been achieved. Device interspacing is 150 μm and thermal crosstalk is of little significance. The devices’ lasing thresholds, near‐field patterns, and power capabilities are highly uniform across the array. This is the first report of a monolithic diode laser array capable of use in multichannel optical recording.
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42.55.Px Semiconductor lasers; laser diodes
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.82.-m Integrated optics

Transient photoacoustic monitoring of pulsed laser drilling

C. E. Yeack, R. L. Melcher, and H. E. Klauser

Appl. Phys. Lett. 41, 1043 (1982); http://dx.doi.org/10.1063/1.93381 (2 pages) | Cited 9 times

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A noncontact transient photoacoustic technique has been developed to monitor a pulsed laser drilling process. Applicaton to the drilling of holes in a composite epoxy‐glass material is presented.
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06.60.Vz Workshop procedures (welding, machining, lubrication, bearings, etc.)

High resolution photoacoustic microscopy on a surface acoustic wave device

G. Veith

Appl. Phys. Lett. 41, 1045 (1982); http://dx.doi.org/10.1063/1.93387 (2 pages) | Cited 8 times

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Photoacoustic imaging of microscopic metal film test structures on a surface acoustic wave device at 76‐MHz light modulation frequency is reported. The samples are evaporated on a YZ LiNbO3 crystal surface and are scanned through the focus spot of a mode‐locked dye laser beam. The optically generated surface acoustic waves are detected by means of a resonant interdigital transducer. Synchronization of the focus spot position to the corresponding piezoelectric signal yields a high resolution photoacoustic image of the samples (lateral resolution 5 μm).
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43.35.Pt Surface waves in solids and liquids
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Photoluminescence of H2S in a rare‐gas matrix

W. Scott and W. C. Walker

Appl. Phys. Lett. 41, 1047 (1982); http://dx.doi.org/10.1063/1.93388 (2 pages)

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Photoluminescence emission and excitation spectra of H2S doped into a solid Kr matrix are presented. The results are interpreted in terms of the formation of a KrS excimer formed by photodissociation of the H2S to produce S(1S) and H2. A photodissociation threshold of 7.5 eV (1675 Å) corresponding to the first vibrationless electronic transition of H2S was observed for the production of S(1S). The results are compared to similar spectra for Kr:OCS observed previously.
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78.55.Hx Other solid inorganic materials
33.50.Dq Fluorescence and phosphorescence spectra
33.80.Gj Diffuse spectra; predissociation, photodissociation
82.50.-m Photochemistry

Low‐temperature refractory metal film deposition

R. Solanki, P. K. Boyer, and G. J. Collins

Appl. Phys. Lett. 41, 1048 (1982); http://dx.doi.org/10.1063/1.93389 (3 pages) | Cited 49 times

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We have deposited uniform films of Mo, W, and Cr over large areas (>5 cm2) using UV laser photodissociation of their respective hexacarbonyls. The depositions were made at room temperature over pyrex and quartz plates, as well as silicon wafers. We have examined the resistivity, reflectivity, stress, and step coverage of these films.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
42.62.-b Laser applications

Correlation between the piezoelectric constant d31 and b‐axis distribution in polyvinylidene fluoride

V. J. McBrierty, D. C. Douglass, and T. T. Wang

Appl. Phys. Lett. 41, 1051 (1982); http://dx.doi.org/10.1063/1.93390 (3 pages) | Cited 4 times

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Nuclear magnetic resonance linewidths are analyzed to provide information on dipole distributions in β‐polyvinylidene fluoride as a function of poling time in order to establish the contribution of the dipole reorientation mechanism to the time evolution of the piezoelectric d31 constant. Results indicate that dipole reorientation proceeds continuously with time and is not uniquely associated with the initially rapid and subsequently slower evolution of d31 with time. It is observed that d31 correlates well with 〈cos 2δ〉, where δ is the angle between a typical b axis and the poling direction. The magnitude of 〈cos 2δ〉 and 〈4δ〉 which characterize the remanent polarization indicates that dipole alignment is far from perfect along the poling direction even in the most strongly poled material.
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77.65.-j Piezoelectricity and electromechanical effects
76.60.-k Nuclear magnetic resonance and relaxation
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

A two‐dimensional phase separation on the spherical surface of the metallic glass Au55Pb22.5Sb22.5

Mark C. Lee and William L. Johnson

Appl. Phys. Lett. 41, 1054 (1982); http://dx.doi.org/10.1063/1.93391 (3 pages) | Cited 3 times

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Recent experiments indicate that a phase separation in a spherical sample of the metallic glass Au55Pb22.5Sb22.5 occurs near the surface of the sphere. This strongly suggests either a contribution of surface‐free energy to the decomposition process or a possible influence of near surface impurities absorbed during synthesis of the sphere. The surface phase separation has been studied as a function of cooling rate of the sphere. At high cooling rates (small sphere sizes), the surface separation disappears altogether suggesting that the surface of the parent liquid droplet is initially homogeneous.
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81.05.Bx Metals, semimetals, and alloys
81.05.Kf Glasses (including metallic glasses)
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Electrical properties of donor and acceptor implanted Hg1−xCdxTe following cw CO2 laser annealing

G. Bahir, R. Kalish, and Y. Nemirovsky

Appl. Phys. Lett. 41, 1057 (1982); http://dx.doi.org/10.1063/1.93392 (3 pages) | Cited 16 times

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The electrical properties of P and B implanted and cw CO2 laser annealed n‐ and p‐type Hg1−x CdxTe (x=0.21, 0.29) are studied. Hall, conductivity, and capacitance‐voltage (C‐V) measurements carried out on the virgin, implanted, and annealed samples all show that both donor and acceptor implants can be electrically activated when annealing with a cw CO2 laser (0.3 s, 250 W/cm2) is employed.
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61.72.U- Doping and impurity implantation
79.20.Ds Laser-beam impact phenomena
72.80.Ey III-V and II-VI semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Trapping parameters of dangling bonds in hydrogenated amorphous silicon

R. A. Street

Appl. Phys. Lett. 41, 1060 (1982); http://dx.doi.org/10.1063/1.93400 (3 pages) | Cited 79 times

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The mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in a‐Si:H are measured using time‐of‐flight transient photoconductivity. The magnitude obtained for the product μτNs is 3.5×108±25% cm−1 V−1 and 4×107±50% cm−1 V−1 for electrons and holes, respectively. The capture cross section is 4×10−15 cm2 for electrons and about 2×10−15 cm2 for holes. The results are consistent with the amphoteric nature of neutral dangling bonds.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.43.Fs Glasses
61.43.-j Disordered solids

Charge transient spectroscopy

J. W. Farmer, C. D. Lamp, and J. M. Meese

Appl. Phys. Lett. 41, 1063 (1982); http://dx.doi.org/10.1063/1.93401 (3 pages) | Cited 49 times

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A new variation of the deep level transient spectroscopy technique is presented. In the new approach, the current transient is integrated, yielding a charge transient. A simple circuit for integrating the current is given and is analyzed. The charge transient technique is compared to previous capacitance transient and current transient techniques, and the advantages of the new method are discussed. The effects of diode leakage currents are also analyzed. Data are presented for defects in neutron irradiated Si.
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78.40.Fy Semiconductors
61.80.-x Physical radiation effects, radiation damage

High‐field electron transport in InxGa1−xAsyP1−y (λg =1.2 μm)

T. H. Windhorn, L. W. Cook, and G. E. Stillman

Appl. Phys. Lett. 41, 1065 (1982); http://dx.doi.org/10.1063/1.93402 (3 pages) | Cited 1 time

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A fixed‐frequency microwave time‐of‐flight technique has been used to measure electron drift velocities in Inx Ga1−x Asy P1−y (λg =1.2 μm) at temperatures 95–400 K and electric field strengths of up to 200 kV/cm. The room‐temperature electron drift velocity in the quaternary is equal to the velocity in GaAs for field strengths greater than ∼62 kV/cm, but the velocity is higher in the quaternary for field strengths from about 20–62 kV/cm at 300 K. At temperatures above 300 K the high‐field velocity is larger in the quaternary than in GaAs, but below 300 K the high‐field velocity is larger in GaAs.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Anomalous diffusion behavior of Mg in GaAs

M. B. Small, R. M. Potemski, W. Reuter, and R. Ghez

Appl. Phys. Lett. 41, 1068 (1982); http://dx.doi.org/10.1063/1.93403 (3 pages) | Cited 7 times

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This experiment was undertaken to demonstrate that the anomalous diffusion behavior reported of Al in the alloy system (AlGa)As is not unique. The interdiffusion of Al and Ga across the buried heterojunctions between the AlAs and GaAs layers of a superlattice structure has been shown to be slow, whereas very much faster diffusion has been observed into the free surface of a GaAs wafer exposed to a saturated solution containing these two elements and Al. In this letter it is shown that Mg exhibits similar behavior and, further, a consequence is that when Mg is used to dope GaAs layers grown by liquid phase epitaxy the dopant penetrates to a significant depth in the underlying solid.
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66.30.J- Diffusion of impurities

Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation

M. Garozzo, G. Conte, F. Evangelisti, and G. Vitali

Appl. Phys. Lett. 41, 1070 (1982); http://dx.doi.org/10.1063/1.93404 (3 pages) | Cited 13 times

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The heteroepitaxial growth of Ge on 〈111〉 Si substrates has been obtained by thermal and electron gun evaporation in the deposition temperature range 375–425 °C. Reflection high‐energy electron diffraction analysis shows that the films are 〈111〉 oriented and exhibit high crystalline quality with no evidence of twins. It was also found that the films are p type with the same mobility as bulk Ge single crystals.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
72.80.Cw Elemental semiconductors

Growth of InGaAsP by molecular beam epitaxy

G. D. Holah, F. L. Eisele, E. L. Meeks, and N. W. Cox

Appl. Phys. Lett. 41, 1073 (1982); http://dx.doi.org/10.1063/1.93405 (3 pages) | Cited 1 time

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Molecular beam epitaxy has been used to grow good quality films of InGaAsP on InP substrates. The films have been characterized using infrared absorption, electroreflectance, x‐ray diffraction, reflection electron diffraction, and Hall measurements. Lattice matching was achieved and room‐temperature mobilities up to 4600 cm2 V−1 s−1 were measured.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
72.80.Ey III-V and II-VI semiconductors
61.66.Bi Elemental solids
75.20.Ck Nonmetals
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